onsemi SZESD7410N2T5G

Overview

SZESD7410N2T5G from onsemi is a bi-directional ultra-low-capacitance ESD protection diode in X2DFN2 package, rated for 9.5 V working reverse voltage, <1.0 pF capacitance at 1 MHz, and ±30 kV IEC 61000-4-2 contact ESD immunity-designed specifically for RF antenna line protection in wireless handsets.

For engineers reviewing the SZESD7410N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 8/20 µs pulse (18.4–19.4 V), insertion loss ≤0.3 dB at 3 GHz, and AEC-Q101 qualification for automotive antenna modules.

Technical Context

The SZESD7410N2T5G is a bi-directional TVS diode configured as a single-channel, two-terminal device with symmetrical clamping behavior-turning on at ~10 V breakdown and limiting transient voltages to ≤20 V under 16 A TLP stress. Its junction capacitance remains linear across bias voltage, enabling stable RF impedance matching.

It operates without external bias, relies on avalanche conduction during ESD events, and delivers sub-1 pF capacitance at DC–1 GHz while maintaining <1 µA leakage at 9.5 V-critical for preserving signal integrity in high-frequency front-end circuits.

Key Specifications

Pinout & Package

X2DFN2 package (1.00 mm × 0.60 mm × 0.37 mm, 0.65 mm pitch), thermally enhanced, wettable flank–capable variant not used here-this variant uses standard solderable terminals with no exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7410N2T5G and CM1224-02SO, the SZESD7410N2T5G uniquely combines automotive qualification, sub-1 pF capacitance, and 1.0 mm × 0.6 mm footprint-enabling miniaturized, high-reliability RF ESD protection unattainable with larger or higher-capacitance alternatives.

Availability

SZESD7410N2T5G is available at Aetrix Electronics and suitable for cellular antenna line protection, Wi-Fi 6E front-end safeguarding, and automotive telematics antenna port hardening requiring stable component supply and full traceability.

Supply support for SZESD7410N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The SZESD7410N2T5G belongs to onsemi's ESD74xx family-engineered specifically for ultra-low-capacitance, high-speed RF signal line protection in space-constrained wireless devices.

FAQ

What is the clamping voltage specification for SZESD7410N2T5G under IEC 61000-4-2 8/20 µs surge?

The SZESD7410N2T5G exhibits a clamping voltage of 18.4 V (typical) to 19.4 V (maximum) when subjected to a 5.0 A peak pulse current per the IEC 61000-4-2 8/20 µs waveform. This value is measured across the device terminals during standardized ESD testing and directly defines the maximum transient voltage imposed on protected circuitry-critical for ensuring compatibility with 20 V-rated RF front-end components. The SZESD7410N2T5G maintains this performance consistently across its operating temperature range.

Does SZESD7410N2T5G support bi-directional ESD protection without polarity concerns?

Yes, SZESD7410N2T5G is a symmetric bi-directional ESD protection diode with identical clamping behavior for both positive and negative transients-verified by TLP testing showing ±18 V clamping at 8 A and ±20 V at 16 A. Its two-terminal X2DFN2 configuration eliminates anode/cathode orientation requirements, simplifying layout in AC-coupled RF paths such as antenna feed lines. This symmetry is intrinsic to the device structure and confirmed in the SZESD7410N2T5G datasheet Figures 11 and 12.

What is the junction capacitance of SZESD7410N2T5G at 1 GHz and why does it matter?

The junction capacitance of SZESD7410N2T5G is 0.35 pF at 1 GHz (typical), per the Electrical Characteristics table. This ultra-low, frequency-stable capacitance minimizes signal distortion and impedance mismatch in high-band RF paths (e.g., n77/n78/n79 5G bands), preventing degradation of return loss and group delay. Unlike conventional diodes whose capacitance rises with frequency, the SZESD7410N2T5G maintains linearity-ensuring predictable performance up to 6 GHz, as shown in Figure 10 of the SZESD7410N2T5G datasheet.

Is SZESD7410N2T5G qualified for automotive applications?

Yes, SZESD7410N2T5G carries the "SZ" prefix denoting AEC-Q101 qualification and PPAP capability-explicitly stated in the Features section of the datasheet. It has undergone stress testing per AEC-Q101 Rev H, including temperature cycling, mechanical shock, and ESD robustness validation under automotive ambient conditions (−40°C to +125°C). This makes SZESD7410N2T5G suitable for use in automotive telematics, GNSS, and V2X antenna modules where reliability under harsh environments is mandatory.

How does the insertion loss of SZESD7410N2T5G impact RF system performance?

SZESD7410N2T5G delivers 0.1 dB insertion loss at 1 GHz and 0.3 dB at 3 GHz-values measured in a 50 Ω system per Figure 9 of the datasheet. This minimal loss preserves antenna radiation efficiency and maintains EVM compliance in high-order modulation schemes (e.g., 256-QAM in LTE-A or 1024-QAM in Wi-Fi 6E). For context, 0.3 dB loss corresponds to just 6.8% power reduction-well below the 0.5 dB threshold typically deemed acceptable for front-end protection without system-level recalibration. The SZESD7410N2T5G achieves this via optimized geometry and ultra-low capacitance.