onsemi SZESD7421N2T5G

Overview

SZESD7421N2T5G from onsemi is a bi-directional ESD protection diode in XDFN2 (SOD-882) package, rated for ±12 kV contact and ±15 kV air IEC 61000-4-2 Level 4 ESD immunity, with 0.3 pF junction capacitance, 100 nA reverse leakage at 5 V, and sub-1 ns response time - deployed to safeguard high-speed data lines in automotive infotainment and mobile camera interfaces.

For engineers reviewing the SZESD7421N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under ±8 kV IEC contact discharge, low-capacitance preservation of signal integrity on USB 2.0/MIPI D-PHY lines, AEC-Q101 qualification for automotive sensor nodes, and thermal performance on FR-5 PCBs.

Technical Context

The SZESD7421N2T5G implements a dual-rail, bi-directional TVS structure with symmetrical breakdown voltages (10.5–14 V on Pin 2-to-GND; 16.5 V on Pin 1-to-GND), enabling robust protection of bidirectional I/O pins without polarity constraints. Its low 0.3 pF capacitance minimizes signal distortion on high-frequency interfaces up to 500 MHz.

Clamping is validated per IEC 61000-4-2 (±8 kV contact) and TLP (±8 A/±16 A), delivering 35 V positive and −21 V negative clamping at peak current - critical for preserving downstream logic thresholds in 1.8 V/3.3 V systems. The device operates across −55 °C to +150 °C and meets AEC-Q101 stress test requirements for automotive deployment.

Key Specifications

Pinout & Package

Package: XDFN2 (SOD-882), 2-terminal surface-mount, exposed copper pad for thermal enhancement, JEDEC-compliant footprint (1.0 × 0.6 mm, 0.65 mm pitch).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7421N2T5G and ESD7421MUTAG, the SZESD7421N2T5G provides identical clamping, capacitance, and leakage but adds automotive-specific process controls, lot traceability, and PPAP support - making it the only option for Tier 1 automotive BOMs requiring AEC-Q101 validation.

Availability

SZESD7421N2T5G is available at Aetrix Electronics and suitable for automotive camera modules, infotainment display links, and industrial sensor hubs requiring stable component supply with guaranteed long-term availability and automotive-grade traceability.

Supply support for SZESD7421N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The SZESD7421N2T5G belongs to onsemi's Micro-Packaged ESD Protection Diode family, engineered specifically for high-density, high-speed interface protection in automotive and mobile platforms where board space, signal fidelity, and AEC-Q101 compliance are mandatory.

FAQ

What is the clamping voltage of SZESD7421N2T5G under IEC 61000-4-2 ±8 kV contact discharge?

The SZESD7421N2T5G delivers a clamping voltage of 35 V for +8 kV contact discharge and −21 V for −8 kV contact discharge, measured per IEC 61000-4-2 waveform using oscilloscope capture methodology defined in onsemi Application Note AND8307/D. These values ensure safe operation below the 3.6 V absolute maximum rating of most 3.3 V I/O cells. The SZESD7421N2T5G achieves this with its low dynamic impedance and fast turn-on behavior.

Is SZESD7421N2T5G suitable for protecting MIPI D-PHY v1.2 interfaces?

Yes, the SZESD7421N2T5G is explicitly designed for high-speed interfaces like MIPI D-PHY v1.2. Its 0.3 pF typical junction capacitance introduces negligible insertion loss at 1.5 Gbps, and its sub-1 ns response time ensures clamping occurs before ESD energy couples into the PHY receiver. The SZESD7421N2T5G has been validated in reference layouts matching MIPI D-PHY trace impedance and routing constraints.

Does SZESD7421N2T5G meet AEC-Q101 requirements for automotive use?

Yes, the SZESD7421N2T5G is fully AEC-Q101 qualified and PPAP capable. It undergoes temperature cycling, high-temperature reverse bias (HTRB), and ESD stress testing per AEC-Q101 Rev D. The "SZ" prefix denotes automotive-specific manufacturing controls, lot traceability, and change notification protocols - all documented in the official onsemi qualification report for SZESD7421N2T5G.

What is the maximum working voltage supported by SZESD7421N2T5G on each pin?

The SZESD7421N2T5G supports 5 V peak reverse voltage on Pin 1 to GND and 16 V on Pin 2 to GND, per its electrical characteristics table. This asymmetry allows flexible integration in mixed-voltage domains - for example, protecting a 5 V I²C bus where Pin 1 connects to SDA/SCL and Pin 2 connects to system ground. The SZESD7421N2T5G maintains low leakage (<100 nA) at both ratings.

Can SZESD7421N2T5G replace ESD7421N2T5G in an existing design?

Yes, the SZESD7421N2T5G is a direct replacement for ESD7421N2T5G in terms of electrical performance, package dimensions, and pinout. The "SZ" prefix adds automotive process controls and traceability but does not alter functionality. Layout, soldering profile, and circuit behavior remain identical - the SZESD7421N2T5G may be substituted without redesign, provided AEC-Q101 compliance is required.