onsemi SZESD7471N2T5G

Overview

SZESD7471N2T5G from onsemi is a bi-directional ultra-low-capacitance TVS diode designed for ESD protection of RF signal paths in space-constrained wireless terminals. It delivers 0.35 pF max junction capacitance at 1 MHz, 5.3 V stand-off voltage, <1 nA leakage at VRWM, 13–15 V clamping voltage at 1 A IPP, and IEC 61000-4-2 Level 4 ±8 kV contact/air ESD immunity - enabling robust antenna line protection in handset front-end modules.

For engineers reviewing the SZESD7471N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include RF insertion loss (<−0.5 dB up to 2.5 GHz), capacitance linearity over bias voltage (0.24–0.35 pF from −6 V to +6 V), dynamic resistance (<0.8 Ω), and XDFN2 package compatibility with 0.65 mm pitch high-density layouts.

Technical Context

The SZESD7471N2T5G is a bi-directional transient voltage suppressor configured as a single-channel, two-terminal device with symmetrical clamping behavior. Its low dynamic resistance (<0.8 Ω) and fast TLP response (100 ns pulse width) ensure effective voltage limiting during sub-nanosecond ESD transients per IEC 61000-4-2.

Capacitance stability across reverse bias (0.24 pF at 0 V → 0.35 pF at ±6 V) and minimal RF insertion loss (<−0.5 dB at 2.5 GHz) confirm suitability for high-frequency signal lines such as LTE/Wi-Fi antenna feeds and NFC interfaces where impedance integrity must be preserved.

Key Specifications

Pinout & Package

SZESD7471N2T5G is housed in an XDFN2 (Case 711AM) 1.0 mm × 0.6 mm, 0.65 mm pitch, 2-terminal surface-mount package with exposed copper thermal pad. The package supports automated placement and reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD2E001DRYR and SP1001-01UTG, SZESD7471N2T5G uniquely balances ultra-low capacitance (0.35 pF), AEC-Q101 qualification, and 5.3 V stand-off - making it optimal for automotive-grade RF antenna protection where both signal fidelity and reliability are critical.

Availability

SZESD7471N2T5G is available at Aetrix Electronics and suitable for RF front-end design, automotive infotainment systems, and high-speed interface protection requiring stable component supply and full traceability.

Supply support for SZESD7471N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The SZESD7471N2T5G belongs to onsemi's ESD7471 family of ultra-low-capacitance TVS diodes engineered specifically for RF signal path protection in mobile and automotive wireless systems.

FAQ

What is the maximum junction capacitance of SZESD7471N2T5G and at what test condition is it specified?

The maximum junction capacitance of SZESD7471N2T5G is 0.35 pF, measured at VR = 0 V and f = 1 MHz per the official onsemi datasheet. This value reflects worst-case capacitance under zero-bias conditions and is critical for maintaining impedance match in 50 Ω RF transmission lines up to 2.5 GHz. The SZESD7471N2T5G achieves superior RF performance due to its tight capacitance control across voltage and frequency.

Does SZESD7471N2T5G meet automotive qualification standards?

Yes, SZESD7471N2T5G is AEC-Q101 qualified and PPAP capable, confirming its suitability for automotive infotainment, telematics, and ADAS subsystems. The "SZ" prefix explicitly denotes automotive-grade manufacturing controls and site-specific change management. The SZESD7471N2T5G operates reliably across −40°C to +125°C junction temperature range and passes accelerated stress testing per AEC-Q101 Rev G.

What is the clamping voltage of SZESD7471N2T5G at 1 A peak pulse current?

The clamping voltage (VC) of SZESD7471N2T5G is 15 V maximum at IPP = 1 A, tested per IEC 61000-4-5 waveform. Typical VC is 13 V under the same condition. This low clamping level protects sensitive RF components like LNAs and power amplifiers by limiting transient overvoltage during ESD events. The SZESD7471N2T5G achieves this with <0.8 Ω dynamic resistance and fast turn-on response.

Can SZESD7471N2T5G be used for USB 2.0 data line protection?

Yes, SZESD7471N2T5G is suitable for USB 2.0 high-speed (480 Mbps) differential pair protection. Its 5.3 V stand-off voltage avoids interference with signal swing, while 0.35 pF capacitance prevents eye diagram degradation. The SZESD7471N2T5G has been validated in USB 2.0 applications per IEC 61000-4-2 Level 4 (±8 kV contact), and its bi-directional architecture handles both D+ and D− transients without polarity constraints.

What package type and dimensions does SZESD7471N2T5G use?

SZESD7471N2T5G uses the XDFN2 package (Case 711AM), measuring 1.0 mm × 0.6 mm with 0.65 mm pin pitch and a 0.47 mm nominal height. It features a 2-terminal configuration with exposed copper thermal pad for enhanced heat dissipation. The SZESD7471N2T5G complies with JEDEC MO-252 and is optimized for high-density RF PCB layouts requiring minimal board area.