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onsemi SZESD7481MUT5G
- Part No.:
- SZESD7481MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
SZESD7481MUT5G.pdf
- Description:
- TVS DIODE 3.3VWM 12VC 2X3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,040
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Product details
Overview
SZESD7481MUT5G from onsemi is a bi-directional ESD protection diode in X3DFN2 package, featuring 0.25 pF typical junction capacitance, 3.3 V working peak reverse voltage, <1.0 nA reverse leakage at VRWM, 10 V clamping voltage at 1 A IPP, and IEC 61000-4-2 Level 4 (±20 kV contact/air) compliance - optimized for RF antenna line and USB 2.0 high-speed interface protection.
For engineers reviewing the SZESD7481MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity preservation, sub-1 ns response time for transient suppression, dynamic resistance under 0.6 Ω, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
The SZESD7481MUT5G is a silicon-based bi-directional TVS diode designed for low-capacitance ESD clamping across differential or single-ended high-frequency signal paths. Its structure enables symmetrical clamping in both polarities with identical breakdown (6.0 V min at 1 mA) and clamping behavior (10 V @ 1 A, 12 V @ 3 A).
It operates within −40 °C to +125 °C junction temperature range and delivers <0.234 dB insertion loss at 8.5 GHz, confirming suitability for RF front-end protection where minimal signal distortion is critical - validated by CV and RF insertion loss curves in the official datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance | 0.25 pF typical at 0 V, 1 MHz - preserves signal integrity in USB 2.0 and antenna lines up to 8.5 GHz. |
| Clamping Voltage | 10 V at 1 A IPP - limits transient overvoltage to safe levels for downstream RF switches and LNAs. |
| Working Voltage | 3.3 V VRWM - matches common I/O rail voltages without leakage-induced bias shift. |
| ESD Rating | IEC 61000-4-2 Level 4: ±20 kV contact/air - meets industrial and automotive system-level ESD immunity requirements. |
| Response Time | <1 ns - ensures clamping activation before transient energy damages sensitive RF ICs. |
| Dynamic Resistance | 0.60 Ω - minimizes voltage overshoot during fast ESD pulses via low-impedance discharge path. |
| Leakage Current | <1.0 nA at 3.3 V - avoids DC loading of high-impedance RF signal paths and sensor interfaces. |
Pinout & Package
Package: X3DFN2 (Case 152AF), dimensions 0.60 mm × 0.30 mm × 0.30 mm, Pb-free, halogen-free, RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Reference terminal for bi-directional clamping; connects to protected signal line in series or shunt configuration. |
| 2 | Anode | Second terminal enabling symmetrical clamping; used with Pin 1 to form bidirectional ESD path to ground or rail. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.25 pF typical - enables use in >1 GHz RF signal paths without impedance mismatch or bandwidth degradation. |
| Bi-directional clamping | Identical 6.0 V breakdown and 10–12 V clamping in both polarities - protects AC-coupled or differential signals without polarity constraints. |
| AEC-Q101 qualified | Validated for automotive applications including infotainment antennas and telematics modules - supports PPAP documentation. |
| Low dynamic resistance | 0.60 Ω - reduces clamping voltage overshoot during fast transients, improving protection margin for GaAs/GaN RF components. |
| Small footprint | 0.60 mm × 0.30 mm body - saves PCB area in space-constrained mobile and wearable RF layouts. |
Applications
| Antenna Line Protection | USB 2.0 High-Speed Interface |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi/GNSS antenna feedlines from ESD events during handling or operation. IC Role / Device Role / Timing Role: Bi-directional shunt ESD clamp placed between antenna port and RF front-end LNA/switch. Use Value: 0.25 pF capacitance prevents detuning of matching networks; 10 V clamping avoids LNA saturation or permanent damage. | Use Scenario: Safeguarding D+ and D− data lines in portable USB peripherals against human-body-model ESD. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted directly at USB connector. Use Value: Sub-0.3 pF capacitance maintains signal rise/fall times; <1 ns response ensures clamping before eye diagram closure. |
| RF Switch ESD Protection | NFC Antenna Interface |
Use Scenario: Shielding SPDT/SP4T RF switches in multi-band smartphones from ESD-induced gate oxide failure. IC Role / Device Role / Timing Role: Series-shunt configuration across switch control lines and RF paths. Use Value: 3.3 V VRWM aligns with CMOS logic rails; low leakage avoids control-line DC offset affecting switch state. | Use Scenario: ESD hardening of 13.56 MHz NFC loop antennas in payment terminals and access cards. IC Role / Device Role / Timing Role: Bidirectional shunt clamp across antenna differential pair. Use Value: Symmetrical clamping preserves differential signal balance; 0.25 pF adds negligible reactance at 13.56 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7481MUT5G | 0.25 pF, 3.3 V VRWM, AEC-Q101 qualified | Automotive and high-frequency RF focus | Preferred for antenna and NFC designs requiring lowest capacitance and automotive qualification. |
| CM1213A-03SR | 0.35 pF, 3.3 V VRWM, no AEC-Q101 certification | General-purpose consumer USB/IO protection | Lower cost alternative where AEC-Q101 is not required and 0.1 pF higher capacitance is acceptable. |
Compared with ESD7481MUT5G and CM1213A-03SR, the SZESD7481MUT5G offers superior RF performance due to its lower capacitance and automotive qualification, while CM1213A-03SR provides broader availability and simpler procurement for non-automotive designs - choice depends on frequency sensitivity and compliance requirements.
Availability
SZESD7481MUT5G is available at Aetrix Electronics and suitable for RF antenna protection, USB 2.0 interface hardening, and NFC module design requiring stable component supply, long-term lifecycle support, and traceable automotive-grade sourcing.
Supply support for SZESD7481MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.
The SZESD7481MUT5G belongs to onsemi's Micro-Packaged ESD Protection Diode family, engineered specifically for ultra-high-frequency signal line protection where sub-0.3 pF capacitance and AEC-Q101 reliability are mandatory.
FAQ
What is the maximum clamping voltage of SZESD7481MUT5G under IEC 61000-4-2 ESD stress?
The SZESD7481MUT5G exhibits an ESD clamping voltage of ≤12 V under IEC 61000-4-2 Level 4 (±8 kV contact) conditions, as confirmed by oscilloscope waveform screenshots in the official datasheet. This value reflects the peak voltage measured across the device during the full ESD pulse event, ensuring downstream ICs remain within safe operating limits. The clamping performance is consistent across both positive and negative polarity discharges.
Is SZESD7481MUT5G suitable for protecting 5 GHz Wi-Fi antenna lines?
Yes, SZESD7481MUT5G is validated for 5 GHz Wi-Fi antenna protection, with 0.25 pF typical capacitance and <0.234 dB insertion loss at 8.5 GHz per datasheet Figure 5. Its low dynamic resistance (0.60 Ω) and sub-1 ns response time prevent signal degradation and ensure robust ESD suppression without affecting return loss or VSWR in 5 GHz front-end designs.
Does SZESD7481MUT5G require external biasing or control signals?
No, SZESD7481MUT5G is a passive bi-directional TVS diode requiring no external bias, power, or control signals. It operates solely based on voltage threshold behavior: conducting only during overvoltage transients above its 6.0 V breakdown voltage. Its 3.3 V VRWM ensures zero conduction during normal 3.3 V rail operation, eliminating standby current draw or circuit interaction.
What is the thermal resistance of SZESD7481MUT5G on a standard FR-5 board?
The thermal resistance (RJA) of SZESD7481MUT5G on an FR-5 board is 400 °C/W, as specified in the Maximum Ratings table. This value assumes standard JEDEC test conditions (1.0 × 0.75 × 0.62 inch board). For continuous power dissipation, the device supports up to 250 mW at TA = 25 °C - sufficient for transient ESD events but not for sustained overvoltage conditions.
How does the "SZ" prefix in SZESD7481MUT5G affect its qualification status?
The "SZ" prefix denotes that SZESD7481MUT5G is manufactured under automotive-specific process controls and is AEC-Q101 qualified, with PPAP capability. Unlike standard ESD7481MUT5G variants, the SZ version undergoes additional screening for temperature cycling, humidity testing, and defect detection - making it suitable for automotive infotainment, telematics, and ADAS antenna modules where reliability under harsh environmental conditions is mandatory.
SZESD7481MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 6V (Typ)
- Voltage - Clamping (Max) @ Ipp:
- 12V
- Current - Peak Pulse (10/1000µs):
- 3A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.25pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.6x0.3) (0201)
SZESD7481MUT5G FAQ
1.How can I place an order for SZESD7481MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD7481MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD7481MUT5G reliable?
The price and inventory of SZESD7481MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD7481MUT5G is usually 5 days.
3.What payment methods are accepted for SZESD7481MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD7481MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD7481MUT5G?
SZESD7481MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD7481MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD7481MUT5G?
For technical support, including SZESD7481MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD7481MUT5G requirements.
6.How does Aetrix verify that SZESD7481MUT5G is sourced from the original manufacturer or authorized distributors?
All SZESD7481MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD7481MUT5G meets industry standards.
7.What is the process for return or replacement of SZESD7481MUT5G?
All SZESD7481MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD7481MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD7481MUT5G part is unused and in its original packaging.
Return procedure for SZESD7481MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZESD7481MUT5G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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