My Inquiry
My Account
onsemi SZESD7551MXWT5G
- Part No.:
- SZESD7551MXWT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
SZESD7551MXWT5G.pdf
- Description:
- TVS DIODE 3.3VWM 13VC 2X2DFNW
- Quantity:
- Payment:
- Shipping:
Inventory:4,384
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SZESD7551MXWT5G from onsemi is a bi-directional ESD protection diode in a wettable flank X2DFNW-2 package, featuring 3.3 V stand-off voltage, 0.35 pF max capacitance, <1 ns response time, and IEC 61000-4-2 Level 4 (±25 kV contact) compliance-designed for RF antenna line and USB 2.0 high-speed signal line protection.
For engineers reviewing the SZESD7551MXWT5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for minimal signal distortion, low dynamic resistance (<2 Ω), AEC-Q101 qualification for automotive use, and wettable flank geometry enabling reliable automated optical inspection (AOI).
Technical Context
The SZESD7551MXWT5G is a silicon-based transient voltage suppression diode configured as a bi-directional clamping device with symmetrical IV characteristics. It operates between ±3.3 V reverse stand-off and clamps to ≤10 V at 1 A IPP and ≤13 V at 3 A IPP under IEC 61000-4-5 waveform conditions.
Its 0.22–0.35 pF junction capacitance (measured at 0 V, 1 MHz to 1 GHz) and sub-1 ns response ensure minimal insertion loss in RF paths up to 6 GHz, while its low leakage (<50 nA at VRWM) preserves signal integrity in high-impedance receiver front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - defines maximum continuous operating voltage before conduction begins; matches common I/O rail voltages in USB/RF ICs. |
| Junction Capacitance | 0.22–0.35 pF - ensures negligible impedance loading on 50 Ω RF traces up to 6 GHz, preserving return loss and S21 performance. |
| Clamping Voltage | ≤10 V @ 1 A IPP - limits transient overvoltage seen by protected IC pins during ESD events, reducing risk of gate oxide damage. |
| ESD Rating | ±25 kV contact per IEC 61000-4-2 Level 4 - exceeds industrial and automotive system-level ESD immunity requirements. |
| Response Time | <1 ns - enables effective clamping before transient energy couples into sensitive analog/RF circuitry. |
| Dynamic Resistance | 0.55–2 Ω - determines voltage overshoot during fast transients; lower value improves clamping efficiency under high di/dt. |
Pinout & Package
Package: X2DFNW-2 (Case 711BG), 1.00 mm × 0.60 mm × 0.37 mm, 0.65 mm pitch, wettable flank leads for AOI-compatible solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Bi-directional ESD anode/cathode node | Connected to protected signal line; forms symmetrical clamping path to ground via external series resistor or direct grounding. |
| 2 (Anode) | Bi-directional ESD anode/cathode node | Electrically identical to Pin 1; enables bidirectional clamping without polarity dependency on PCB layout. |
Key Features
| Feature | Design Value |
|---|---|
| Wettable Flank Geometry | Enables high-reliability AOI detection of solder fillet quality on both side walls-critical for automotive production traceability. |
| AEC-Q101 Qualification | Validated for automotive-grade temperature cycling, humidity bias, and mechanical shock-supports under-hood and infotainment module deployment. |
| Ultra-Low Capacitance | 0.22 pF typical at 1 GHz ensures <0.1 dB insertion loss at 2.4 GHz and <0.3 dB at 5.8 GHz-preserves Wi-Fi/BT/NFC antenna efficiency. |
| Bi-directional Clamping | Symmetrical IV curve eliminates need for polarity-aware placement-reduces design review time and prevents assembly errors. |
Applications
| Antenna Line Protection | USB 2.0 High-Speed Data Lines |
|---|---|
Use Scenario: Protecting cellular, GPS, or Wi-Fi antenna feedlines from human-body ESD events during device handling or field operation. IC Role / Device Role / Timing Role: Bi-directional voltage clamp placed in series between antenna switch and RF transceiver LNA input. Use Value: 0.22 pF capacitance avoids detuning of 50 Ω matching networks; ±25 kV IEC 61000-4-2 rating prevents LNA burnout without degrading noise figure. | Use Scenario: Safeguarding D+ and D− differential pairs in portable USB peripherals against plug/unplug ESD transients. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted adjacent to USB connector, referenced to chassis ground. Use Value: Sub-1 ns response ensures clamping occurs before USB 2.0 eye diagram closure; 3.3 V VRWM aligns with PHY I/O voltage rails. |
| RF Switch and PA Protection | NFC/RFID Antenna Interface |
Use Scenario: Shielding RF front-end switches and power amplifiers in smartphone transceivers from ESD-induced latch-up or gate rupture. IC Role / Device Role / Timing Role: Series-connected ESD suppressor between antenna switch output and PA input, minimizing parasitic loading. Use Value: 0.35 pF max capacitance maintains harmonic suppression and isolation specs; low dynamic resistance reduces forward voltage drop during transmit bursts. | Use Scenario: Securing 13.56 MHz NFC reader/writer antenna loops against electrostatic discharge during card tap events. IC Role / Device Role / Timing Role: Bidirectional shunt protector across antenna coil terminals, grounded through low-inductance path. Use Value: Symmetrical clamping preserves loop Q-factor; 3.3 V VRWM avoids DC bias interference with NFC controller's internal regulators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7551N2T5G | Same electrical specs; uses X2DFN2 (non-wettable flank) package; not AEC-Q101 qualified. | Lacks AOI capability and automotive qualification; suitable for cost-sensitive consumer electronics only. | Select when AOI or automotive compliance is unnecessary and board space constraints match X2DFN2 footprint. |
| CM1213A-03SR | 0.35 pF max capacitance, 3.3 V VRWM, but rated only to ±15 kV IEC 61000-4-2; no AEC-Q101 data published. | Lower ESD robustness limits use to non-automotive handhelds; different pinout requires layout change. | Choose only if lower ESD level suffices and existing CM1213A-03SR footprint is locked in design. |
Compared with ESD7551N2T5G and CM1213A-03SR, the SZESD7551MXWT5G uniquely combines wettable flank AOI support, AEC-Q101 qualification, and full ±25 kV IEC 61000-4-2 compliance-making it the sole option for automotive-grade RF ESD protection requiring process traceability.
Availability
SZESD7551MXWT5G is available at Aetrix Electronics and suitable for automotive infotainment systems, 5G IoT antenna modules, and USB-C peripheral designs requiring stable component supply with full AEC-Q101 documentation and wettable flank manufacturing support.
Supply support for SZESD7551MXWT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The SZESD7551MXWT5G belongs to onsemi's ESD7551 family of ultra-low-capacitance TVS diodes-engineered specifically for high-frequency signal line protection where RF performance, miniaturization, and automotive reliability intersect.
FAQ
What is the maximum clamping voltage of the SZESD7551MXWT5G under a 3 A ESD pulse?
The SZESD7551MXWT5G exhibits a maximum clamping voltage of 13 V when subjected to a 3 A peak pulse current (IPP = 3 A), per IEC 61000-4-5 waveform testing at TA = 25°C. This value is specified in the Electrical Characteristics table of the official onsemi datasheet (ESD7551/D, Rev. 4). The clamping behavior remains consistent across both positive and negative polarity pulses due to its bi-directional architecture. Designers should verify layout parasitics do not elevate effective clamping voltage beyond this spec.
Is the SZESD7551MXWT5G suitable for protecting 5 GHz Wi-Fi antenna lines?
Yes, the SZESD7551MXWT5G is suitable for 5 GHz Wi-Fi antenna line protection. Its junction capacitance is 0.22 pF at 1 GHz and remains ≤0.35 pF up to 1 GHz (with extrapolated stability per CV curve), resulting in negligible impedance mismatch on 50 Ω traces. Measured RF insertion loss stays below 0.3 dB at 5.8 GHz (Figure 3), confirming minimal impact on antenna efficiency and return loss. The device's bi-directional symmetry also avoids polarity-dependent tuning shifts.
Does the SZESD7551MXWT5G require a series current-limiting resistor in typical applications?
No, the SZESD7551MXWT5G does not require an external series current-limiting resistor in standard ESD protection configurations. Its low dynamic resistance (0.55–2 Ω) and fast response (<1 ns) enable direct shunt placement across protected lines. However, a small series resistor (e.g., 0–10 Ω) may be added near the connector to dampen ringing in high-dV/dt scenarios-this is layout-dependent and not mandated by the device's electrical specs. Always validate with TLP testing for your specific PCB stackup.
How does the wettable flank feature of the SZESD7551MXWT5G improve manufacturing yield?
The wettable flank feature of the SZESD7551MXWT5G exposes solderable metal along the vertical sidewalls of its X2DFNW-2 package, enabling automated optical inspection (AOI) systems to verify solder fillet formation and joint integrity after reflow. This eliminates reliance on X-ray for hidden-joint validation, reduces false call rates, and supports PPAP-compliant automotive production. Unlike standard X2DFN2 packages, it provides full 360° solder coverage assessment without additional test fixtures or process steps.
What is the lead finish and RoHS status of the SZESD7551MXWT5G?
The SZESD7551MXWT5G features a matte tin (Sn) lead finish and is fully RoHS compliant, Pb-free, halogen-free, and BFR-free per onsemi's declaration in the ESD7551/D datasheet (Rev. 4, February 2024). The "G" suffix confirms Pb-free packaging, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements. No exemptions apply, and material declarations are available upon request through Aetrix Electronics' compliance portal.
SZESD7551MXWT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- 13V
- Current - Peak Pulse (10/1000µs):
- 3A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.25pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 2-X2DFNW (1x0.6)
SZESD7551MXWT5G FAQ
1.How can I place an order for SZESD7551MXWT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD7551MXWT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD7551MXWT5G reliable?
The price and inventory of SZESD7551MXWT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD7551MXWT5G is usually 5 days.
3.What payment methods are accepted for SZESD7551MXWT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD7551MXWT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD7551MXWT5G?
SZESD7551MXWT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD7551MXWT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD7551MXWT5G?
For technical support, including SZESD7551MXWT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD7551MXWT5G requirements.
6.How does Aetrix verify that SZESD7551MXWT5G is sourced from the original manufacturer or authorized distributors?
All SZESD7551MXWT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD7551MXWT5G meets industry standards.
7.What is the process for return or replacement of SZESD7551MXWT5G?
All SZESD7551MXWT5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD7551MXWT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD7551MXWT5G part is unused and in its original packaging.
Return procedure for SZESD7551MXWT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZESD7551MXWT5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
