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onsemi SZESD7561N2T5G
- Part No.:
- SZESD7561N2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
SZESD7561N2T5G.pdf
- Description:
- MICROPACKAGED DIODES FOR ESD PRO
- Quantity:
- Payment:
- Shipping:
Inventory:3,765
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Product details
Overview
SZESD7561N2T5G from onsemi is a bi-directional TVS diode designed for ultra-low-capacitance ESD protection of RF signal paths, featuring 0.3 pF typical junction capacitance at 0 V/1 MHz, 35 V clamping voltage at 8 A TLP, and IEC61000-4-2 ±18 kV contact ESD immunity-deployed in antenna lines and RF front-end modules of wireless handsets.
For engineers reviewing the SZESD7561N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include RF insertion loss (0.05 dB @ 1 GHz), capacitance linearity over voltage, low leakage (<1 nA), and X2DFN2 package compatibility with high-density RF layouts.
Technical Context
The SZESD7561N2T5G implements a bi-directional avalanche-clamping structure optimized for transient suppression without degrading RF signal integrity. Its capacitance remains stable across reverse bias (0.3–0.55 pF from 0 to 16 V), enabling minimal impedance mismatch in 50 Ω antenna feedlines.
It meets IEC61000-4-2 Level 4 (±18 kV contact), IEC61000-4-4 (40 A EFT), and ISO 10605 (±23 kV contact) while maintaining sub-1 nA leakage at 5 V and dynamic resistance of 1.05 Ω-critical for preserving noise floor and gain flatness in PA and switch paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (CJ) | 0.3 pF typ @ 0 V, 1 MHz - preserves RF impedance match and minimizes signal distortion in GHz-band antenna lines |
| Clamping Voltage (VC) | 35 V @ 8 A TLP - limits transient overvoltage to safe levels for sensitive RF ICs like LNA and PA drivers |
| Working Voltage (VRWM) | 16 V - supports common RF bias rails including LTE/5G power amplifier supply domains |
| ESD Rating | ±18 kV contact per IEC61000-4-2 - exceeds industrial and handheld device immunity requirements |
| Insertion Loss | 0.05 dB @ 1 GHz - negligible RF path attenuation, enabling direct integration into 50 Ω signal chains |
| Leakage Current (IR) | <1 nA @ 5 V - avoids DC loading and battery drain in always-on RF receivers and NFC circuits |
Pinout & Package
Package: X2DFN2 (Case 714AB), 1.00 mm × 0.60 mm × 0.37 mm, 0.65 mm pitch, 2-terminal surface-mount package with exposed pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (Bi-directional) | Common connection point for bidirectional ESD current flow; symmetric layout enables placement on any RF line without polarity concern |
| Pin 2 | Cathode (Bi-directional) | Paired terminal completing the low-inductance clamping path; no dedicated ground pin required due to symmetrical diode architecture |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | 0.3–0.55 pF across 0–16 V reverse bias - ensures consistent RF performance across operating voltage range |
| Ultra-low insertion loss | 0.05 dB @ 1 GHz - eliminates need for compensation networks in high-frequency antenna matching |
| IEC61000-4-2 Level 4 compliance | ±18 kV contact discharge - qualifies for ruggedized consumer and industrial wireless terminals |
| Pb-free, RoHS-compliant packaging | X2DFN2 with halogen-free/BFR-free construction - meets global environmental compliance and reflow process requirements |
Applications
| Antenna Line Protection | RF Front-End Switch Protection |
|---|---|
Use Scenario: Protecting cellular antenna feedlines in smartphones and IoT modules against ESD during handling and operation. IC Role / Device Role / Timing Role: Bi-directional TVS clamp placed in series with 50 Ω RF path to limit transient voltage without disrupting signal integrity. Use Value: 0.3 pF capacitance and 0.05 dB insertion loss prevent detuning and maintain TRP/TIS metrics across LTE/5G bands. |
Use Scenario: Safeguarding SPDT/SP4T RF switches in multi-band handset designs from ESD-induced gate oxide damage. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted adjacent to switch RF ports to clamp fast transients before propagation. Use Value: Sub-1 nA leakage avoids DC offset errors in control logic; ±18 kV rating covers assembly-line ESD events. |
| USB 2.0 High-Speed Data Lines | NFC Antenna Interface |
Use Scenario: ESD protection for D+/D− differential pairs in portable USB peripherals and host controllers. IC Role / Device Role / Timing Role: Symmetric bi-directional clamp ensuring equal transient response on both data lines to preserve signal skew. Use Value: 0.3 pF capacitance prevents eye diagram closure at 480 Mbps; 35 V clamping protects PHY transceivers. |
Use Scenario: Shielding 13.56 MHz NFC loop antennas and matching networks from user-contact ESD pulses. IC Role / Device Role / Timing Role: Series-connected ESD suppressor integrated into antenna feed trace to avoid Q-factor degradation. Use Value: Capacitance stability over bias maintains resonant frequency accuracy; 0.21 dB loss @ 3 GHz validates HF band suitability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF capacitance, 12 V working voltage, ±8 kV IEC61000-4-2 contact rating | Targeted at lower-voltage digital I/O (e.g., GPIO, I²C), not RF antenna lines | Select when protecting sub-12 V logic interfaces where capacitance tolerance >0.5 pF is acceptable |
| ESD56081D05-2/TR | 0.25 pF capacitance, 5.5 V working voltage, ±15 kV contact rating, SOD-523 package | Optimized for USB 2.0 and HDMI; lacks 16 V VRWM needed for PA bias rail protection | Prefer for ultra-high-speed digital interfaces below 6 V; not suitable for 16 V RF front-end nodes |
Compared with SZESD7561N2T5G, TPD2E001DRYR offers lower cost but higher capacitance and reduced ESD robustness, limiting RF use; ESD56081D05-2/TR achieves lower capacitance but cannot withstand 16 V bias, restricting deployment to low-voltage data lines only.
Availability
SZESD7561N2T5G is available at Aetrix Electronics and suitable for RF front-end protection, antenna line safeguarding, and high-speed interface ESD hardening requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SZESD7561N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, and communications markets.
The SZESD7561N2T5G belongs to onsemi's ESD75xx ultra-low-capacitance TVS family, engineered specifically for RF signal path protection where minimal parasitic impact is mandatory.
FAQ
What is the maximum working voltage of the SZESD7561N2T5G?
The SZESD7561N2T5G has a maximum working peak reverse voltage (VRWM) of 16 V, verified per its Electrical Characteristics table under TA = 25°C conditions. This rating allows safe integration into RF power amplifier bias lines and other 12–16 V signal paths without risk of steady-state breakdown. The SZESD7561N2T5G maintains stable clamping behavior up to this voltage threshold.
Does the SZESD7561N2T5G meet IEC61000-4-2 Level 4 ESD requirements?
Yes, the SZESD7561N2T5G is rated for ±18 kV contact discharge per IEC61000-4-2 Level 4, as confirmed in both the Maximum Ratings and Electrical Characteristics sections of its official datasheet. This makes the SZESD7561N2T5G suitable for end-product certification in consumer handhelds, industrial terminals, and medical wireless devices requiring highest-tier ESD immunity.
What is the junction capacitance of the SZESD7561N2T5G at 1 GHz?
The SZESD7561N2T5G exhibits 0.3 pF typical junction capacitance at 1 GHz and 0 V bias, as specified in the Electrical Characteristics table. This value is critical for RF design-it ensures minimal impedance discontinuity in 50 Ω antenna feedlines and preserves signal fidelity across LTE Band 41 and 5G n77/n78 frequencies.
Is the SZESD7561N2T5G compatible with lead-free reflow processes?
Yes, the SZESD7561N2T5G uses Pb-free, halogen-free/BFR-free construction and is qualified for standard lead-free reflow profiles, including peak temperatures up to 260°C for 10 seconds. Its X2DFN2 package (Case 714AB) is explicitly rated for this thermal exposure, making the SZESD7561N2T5G compatible with modern high-volume SMT assembly lines.
How does the SZESD7561N2T5G compare to general-purpose TVS diodes in RF applications?
Unlike general-purpose TVS diodes with capacitances >10 pF, the SZESD7561N2T5G delivers 0.3 pF typical capacitance and 0.05 dB insertion loss at 1 GHz-enabling direct placement on RF signal lines without matching network redesign. Its bi-directional symmetry and 16 V VRWM make the SZESD7561N2T5G uniquely suited for antenna, PA, and switch protection where conventional TVS devices would degrade gain and efficiency.
SZESD7561N2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 16V (Max)
- Voltage - Breakdown (Min):
- 16.5V
- Voltage - Clamping (Max) @ Ipp:
- 39V (Typ)
- Current - Peak Pulse (10/1000µs):
- 16A (100ns)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- Automotive
- Capacitance @ Frequency:
- 0.3pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X2DFN (1x0.6)
SZESD7561N2T5G FAQ
1.How can I place an order for SZESD7561N2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD7561N2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD7561N2T5G reliable?
The price and inventory of SZESD7561N2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD7561N2T5G is usually 5 days.
3.What payment methods are accepted for SZESD7561N2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD7561N2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD7561N2T5G?
SZESD7561N2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD7561N2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD7561N2T5G?
For technical support, including SZESD7561N2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD7561N2T5G requirements.
6.How does Aetrix verify that SZESD7561N2T5G is sourced from the original manufacturer or authorized distributors?
All SZESD7561N2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD7561N2T5G meets industry standards.
7.What is the process for return or replacement of SZESD7561N2T5G?
All SZESD7561N2T5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD7561N2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD7561N2T5G part is unused and in its original packaging.
Return procedure for SZESD7561N2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZESD7561N2T5G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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