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onsemi SZESD7571MXWT5G
- Part No.:
- SZESD7571MXWT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
SZESD7571MXWT5G.pdf
- Description:
- TVS DIODE 5.3VWM 15VC 2X2DFNW
- Quantity:
- Payment:
- Shipping:
Inventory:11,307
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Product details
Overview
SZESD7571MXWT5G from onsemi is a bi-directional ESD protection diode in a wettable flank X2DFNW-2 package, designed for ultra-low-capacitance RF signal line protection. It delivers 0.35 pF max capacitance at 1 MHz, 5.3 V stand-off voltage, <1 nA leakage at VRWM, 13–15 V clamping voltage at 1 A IPP, and IEC 61000-4-2 Level 4 (±8 kV contact/air) compliance - enabling robust ESD hardening of antenna, USB 2.0/3.0, and NFC signal paths in space-constrained wireless handsets.
For engineers reviewing the SZESD7571MXWT5G datasheet, pinout, applications, or equivalent options, key selection criteria include RF insertion loss (<−1 dB at 2.5 GHz), capacitance linearity over bias voltage, wettable flank geometry for AOI compatibility, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
The SZESD7571MXWT5G employs a silicon avalanche diode structure optimized for bi-directional transient suppression with symmetrical clamping behavior. Its low dynamic resistance (<0.8 Ω) and fast response time ensure effective voltage limiting during sub-nanosecond ESD events per IEC 61000-4-2.
Capacitance remains stable across bias (0.24–0.35 pF from 0 to 5.3 V), supporting high-frequency signal integrity in RF front-end designs. The device operates within −55°C to +150°C junction temperature range and supports reflow up to 260°C (10 s).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (VR = 0 V, f = 1 GHz) | 0.24–0.35 pF - Enables minimal RF signal distortion in antenna and PA output lines. |
| Stand-off Voltage (VRWM) | 5.3 V - Matches typical 5 V USB and RF IC supply rails without false triggering. |
| Clamping Voltage (IPP = 1 A) | 13–15 V - Limits transient overvoltage to safe levels for downstream 5 V logic and RF transceivers. |
| Leakage Current (VRWM = 5.3 V) | <1 nA - Prevents DC loading and battery drain in always-on RF receive paths. |
| ESD Rating (IEC 61000-4-2) | ±8 kV contact / ±8 kV air - Meets Level 4 immunity for handheld consumer and automotive infotainment ports. |
| Dynamic Resistance | <0.8 Ω - Ensures rapid conduction onset and low clamping overshoot during fast transients. |
| Junction Temperature Range | −55°C to +150°C - Supports operation in under-hood automotive and industrial edge environments. |
Pinout & Package
The SZESD7571MXWT5G is housed in an X2DFNW-2 surface-mount package (1.00 mm × 0.60 mm × 0.37 mm, 0.65 mm pitch) with wettable flank side walls for automated optical inspection (AOI) and solder joint quality verification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (Bi-directional Cathode-Anode Pair) | Common terminal for symmetric ESD current path; connects to protected signal line. |
| Pin 2 | Cathode (Bi-directional Cathode-Anode Pair) | Common terminal completing bidirectional clamping path; ties to ground or reference plane. |
Key Features
| Feature | Design Value |
|---|---|
| Wettable Flank Geometry | Enables reliable AOI detection of solder fillet formation on both side walls - critical for zero-defect manufacturing in high-volume mobile assembly. |
| Capacitance Linearity Over Bias | 0.24–0.35 pF across 0–5.3 V reverse bias - preserves impedance matching and minimizes group delay variation in 5G NR and Wi-Fi 6E antenna feeds. |
| AEC-Q101 Qualification | Validated for automotive applications including infotainment USB ports and telematics antenna interfaces - supports PPAP documentation requirements. |
| Ultra-Low Insertion Loss | <−1 dB at 2.5 GHz - Maintains RF power transfer efficiency in front-end modules without requiring compensation networks. |
| Pb-Free, Halogen-Free | RoHS-compliant construction with no BFRs - satisfies global environmental compliance mandates for consumer and automotive electronics. |
Applications
| Antenna Line Protection | USB 2.0/3.0 Interface |
|---|---|
Use Scenario: Protecting LTE/5G main diversity antenna feed lines from ESD events during handling and connector mating. IC Role / Device Role / Timing Role: Bi-directional voltage clamp placed in series between antenna switch and transceiver RF port. Use Value: 0.24 pF capacitance at 1 GHz ensures <0.2 dB insertion loss, preserving receiver sensitivity and TRP/TIS metrics. |
Use Scenario: Safeguarding high-speed differential D+/D− data lines in portable USB host devices against user-induced ESD. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted adjacent to USB connector with minimal trace length. Use Value: 5.3 V VRWM avoids false triggering during 4.75–5.25 V bus operation while clamping transients below 15 V. |
| NFC Antenna Interface | RF Front-End Switch Protection |
Use Scenario: Shielding 13.56 MHz NFC loop antenna traces from electrostatic discharge during card-swipe or tap events. IC Role / Device Role / Timing Role: Series-connected ESD diode on each antenna leg, grounded via shortest possible path. Use Value: Sub-1 nA leakage prevents detuning of resonant LC tank and maintains Q-factor above 25 at operating frequency. |
Use Scenario: Protecting SPDT/SP4T RF switches in cellular front-end modules from ESD damage during board-level test and end-user use. IC Role / Device Role / Timing Role: Shunt-mounted across RF input/output pins to suppress transients before reaching GaAs or SOI switch die. Use Value: 0.8 Ω dynamic resistance enables clamping within 100 ps, preventing gate oxide breakdown in sensitive CMOS control circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7571N2T5G | Same electrical specs; uses X2DFN2 package (non-wettable flank) | Lacks AOI capability; unsuitable for automotive SMT lines requiring 100% solder joint inspection | Select when cost optimization outweighs AOI requirement and AEC-Q101 is not mandated. |
| CM1213A-03SO | Higher capacitance (0.6 pF), lower VRWM (3.3 V), non-AEC-Q101 | Better suited for low-voltage I/O (e.g., 3.3 V GPIO), not RF antenna lines | Choose only for non-RF, non-automotive applications where tighter voltage margin is acceptable. |
Compared with ESD7571N2T5G and CM1213A-03SO, the SZESD7571MXWT5G uniquely combines wettable flank geometry, AEC-Q101 qualification, and 0.24 pF @ 1 GHz - making it the sole option for production-grade RF antenna ESD protection in automotive telematics and premium mobile platforms.
Availability
SZESD7571MXWT5G is available at Aetrix Electronics and suitable for RF antenna protection, USB 2.0/3.0 interface hardening, and NFC front-end safeguarding requiring stable component supply across high-volume consumer and automotive programs.
Supply support for SZESD7571MXWT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The SZESD7571MXWT5G belongs to onsemi's ESD7571 family - engineered specifically for ultra-low-capacitance, high-linearity ESD protection in RF signal chains where board space, signal fidelity, and manufacturability are critical constraints.
FAQ
What is the primary function of the SZESD7571MXWT5G in a circuit?
The SZESD7571MXWT5G functions as a bi-directional ESD protection diode that clamps transient voltages on high-frequency signal lines. It diverts ESD current away from sensitive RF components like transceivers and power amplifiers while maintaining signal integrity through ultra-low capacitance (0.24 pF at 1 GHz) and minimal insertion loss. Its role is strictly protective - not signal conditioning or voltage regulation - and it operates passively without bias or control signals.
Does the SZESD7571MXWT5G require external biasing or control circuitry?
No, the SZESD7571MXWT5G requires no external biasing, control signals, or power supply. It operates entirely passively as a voltage-triggered clamp: conducting only during ESD or transient overvoltage events exceeding its 5.3 V stand-off voltage. Its bi-directional symmetry allows direct placement on AC-coupled or differential RF lines without polarity concerns, and it draws less than 1 nA leakage under normal operating conditions.
Is the SZESD7571MXWT5G qualified for automotive applications?
Yes, the SZESD7571MXWT5G is AEC-Q101 qualified and PPAP capable. This certification validates its reliability under automotive temperature cycling (−55°C to +150°C), mechanical shock, vibration, and humidity testing. Its wettable flank X2DFNW-2 package further supports automotive manufacturing requirements by enabling full-solder-joint AOI - a key process control step in Tier 1 assembly lines.
How does the wettable flank feature of the SZESD7571MXWT5G improve manufacturing yield?
The wettable flank geometry of the SZESD7571MXWT5G exposes solderable metal along both side walls of the X2DFNW-2 package, allowing automated optical inspection systems to verify solder fillet formation and joint completeness. This eliminates reliance on X-ray or destructive sampling for solder quality assurance - directly improving first-pass yield and reducing field failure risk in high-reliability mobile and automotive production.
Can the SZESD7571MXWT5G be used on differential high-speed data lines like USB 3.0 SuperSpeed pairs?
Yes, the SZESD7571MXWT5G is routinely deployed on USB 3.0 differential pairs due to its matched capacitance (0.24–0.35 pF), low dynamic resistance (<0.8 Ω), and symmetrical bi-directional clamping. Its ultra-low capacitance prevents skew and impedance discontinuity, while its 13–15 V clamping voltage protects SuperSpeed transceivers rated for ≤16 V absolute maximum. Layout best practice is to place one SZESD7571MXWT5G per line (D+ and D−) with identical trace lengths to ground.
SZESD7571MXWT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.3V (Max)
- Voltage - Breakdown (Min):
- 7V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 1A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- USB
- Capacitance @ Frequency:
- 0.24pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 2-X2DFNW (1x0.6)
SZESD7571MXWT5G FAQ
1.How can I place an order for SZESD7571MXWT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD7571MXWT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD7571MXWT5G reliable?
The price and inventory of SZESD7571MXWT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD7571MXWT5G is usually 5 days.
3.What payment methods are accepted for SZESD7571MXWT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD7571MXWT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD7571MXWT5G?
SZESD7571MXWT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD7571MXWT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD7571MXWT5G?
For technical support, including SZESD7571MXWT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD7571MXWT5G requirements.
6.How does Aetrix verify that SZESD7571MXWT5G is sourced from the original manufacturer or authorized distributors?
All SZESD7571MXWT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD7571MXWT5G meets industry standards.
7.What is the process for return or replacement of SZESD7571MXWT5G?
All SZESD7571MXWT5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD7571MXWT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD7571MXWT5G part is unused and in its original packaging.
Return procedure for SZESD7571MXWT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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