onsemi SZESD7571N2T5G

Overview

SZESD7571N2T5G from onsemi is a bi-directional ESD protection diode in X2DFN2 package, designed for ultra-low-capacitance RF signal line protection. It delivers 0.35 pF max capacitance at 1 MHz, 5.3 V stand-off voltage, <1 nA leakage at VRWM, 13–15 V clamping voltage at 1 A IPP, and IEC61000-4-2 Level 4 ±8 kV contact/air ESD immunity - ideal for antenna feed lines in 5G handsets.

For engineers reviewing the SZESD7571N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include RF insertion loss (<−0.5 dB up to 2.5 GHz), capacitance linearity over bias (0.24–0.35 pF from 0 to 5.3 V), dynamic resistance (<0.8 Ω), and compatibility with high-speed interfaces including USB 2.0/3.0 and NFC.

Technical Context

The SZESD7571N2T5G employs a silicon avalanche diode structure optimized for bi-directional clamping across two terminals, enabling symmetric ESD suppression without polarity constraints. Its low-junction-capacitance design maintains signal integrity in RF paths up to 6 GHz, validated by CV characterization showing <0.11 pF variation from 0 to 5.3 V bias.

It operates as a passive, non-controlled protection device - no enable pin, no power supply, no logic interface. Clamping action initiates at ~7.0 V breakdown (IT = 1 mA) and sustains sub-15 V voltage limiting under 1 A TLP pulse, with thermal resistance of 400°C/W ensuring reliability under repeated ±8 kV IEC61000-4-2 strikes.

Key Specifications

Pinout & Package

Package: X2DFN2 (Case 714AB), 1.00 mm × 0.60 mm × 0.37 mm, 0.65 mm pitch, wettable flank not applicable (N2 variant), Pb-free/RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7571N2T5G and SESD7571N2T5G, the SZESD7571N2T5G provides identical electrical performance and packaging but adds AEC-Q101 qualification and PPAP capability - making it the sole choice for automotive telematics, infotainment, and ADAS sensor interface protection where component reliability certification is mandatory.

Availability

SZESD7571N2T5G is available at Aetrix Electronics and suitable for 5G handset antenna protection, NFC reader interfaces, USB 2.0 peripheral designs requiring stable component supply and long-term manufacturability.

Supply support for SZESD7571N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The SZESD7571N2T5G belongs to onsemi's ESD7571 family of ultra-low-capacitance TVS diodes, engineered specifically for RF signal line protection in space-constrained wireless devices where signal fidelity and ESD robustness must coexist.

FAQ

What is the maximum operating temperature range for the SZESD7571N2T5G?

The SZESD7571N2T5G is rated for junction and storage temperatures from −55°C to +150°C. This wide range supports deployment in automotive under-hood modules and industrial outdoor equipment. The device maintains its 0.35 pF capacitance and <15 V clamping performance across this full range, as verified in onsemi's thermal characterization reports. Thermal resistance (R_JA) is 400°C/W on FR-4 board with minimum pad layout.

Does the SZESD7571N2T5G require external biasing or control signals?

No, the SZESD7571N2T5G is a passive, two-terminal bi-directional ESD protection diode with no power supply, enable pin, or control interface. It operates solely via avalanche breakdown at ~7.0 V and clamps transients automatically. This makes SZESD7571N2T5G suitable for placement directly on high-frequency signal traces without affecting DC bias conditions or adding routing complexity.

How does the capacitance of SZESD7571N2T5G vary with applied DC bias?

The SZESD7571N2T5G exhibits exceptional capacitance linearity: 0.24 pF at 0 V, rising to 0.35 pF at 5.3 V VRWM - a total variation of just 0.11 pF. This behavior is documented in Figure 10 of the official datasheet and enables stable impedance matching in broadband RF applications such as 5G NR bands (n77/n78/n79), where even 0.1 pF shift can degrade return loss.

Is the SZESD7571N2T5G compatible with lead-free reflow soldering processes?

Yes, the SZESD7571N2T5G uses a Pb-free termination finish and is qualified for standard lead-free reflow profiles, including peak temperatures up to 260°C for 10 seconds. Its X2DFN2 package (1.00 × 0.60 × 0.37 mm) is designed for reliable solder joint formation under IPC-J-STD-020 moisture sensitivity level 1 conditions, with no special baking required prior to assembly.

Can SZESD7571N2T5G be used for USB 3.0 SuperSpeed differential pairs?

No - the SZESD7571N2T5G is specified for up to 2.5 GHz operation (Figure 11 shows <−0.5 dB insertion loss at 2.5 GHz), while USB 3.0 requires signal integrity preservation up to 5 GHz. For USB 3.0, onsemi recommends higher-bandwidth alternatives like the ESD7572 series. SZESD7571N2T5G remains optimal for USB 2.0 (480 Mbps, ~240 MHz fundamental) and USB-C CC line protection.