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onsemi SZESD8104MUTAG

Part No.:
SZESD8104MUTAG
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
10-UFDFN
Datasheet:
AetrixSZESD8104MUTAG.pdf
Description:
SZESD8104MUTAG
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,096

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Product details

Overview

SZESD8104MUTAG from onsemi is a unidirectional, low-capacitance ESD protection diode array in UDFN10 (2.5 × 1.0 mm) package, designed for high-speed differential data lines. It delivers 0.37 pF max junction capacitance (I/O to GND), ±15 kV IEC 61000−4−2 contact/air ESD rating, and clamps to ≤11.4 V at ±16 A TLP, enabling robust protection of USB 3.1 (10 Gb/s), HDMI 2.0 (6 Gb/s), and DisplayPort interfaces without signal integrity degradation.

For engineers reviewing the SZESD8104MUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance (<0.4 pF), AEC-Q101 qualification, flow-through UDFN10 layout compatibility with matched trace lengths, and verified eye diagram performance at 10 Gb/s with <0.15 dB insertion loss at fundamental frequencies up to 5 GHz.

Technical Context

The SZESD8104MUTAG employs Low Voltage Punch Through (LVPT) technology, enabling fast turn-on below 4.0 V breakdown and optimized clamping for soft-failure prevention in sub-28 nm ICs. Its unidirectional architecture protects against negative transients only, with common GND pins (3 and 8) supporting shared ground return paths across four I/O channels.

Designed for impedance-critical layouts, the flow-through pinout (I/O–I/O–GND–I/O–I/O–GND) minimizes stub length and maintains differential pair symmetry. It supports IEC 61000−4−2 Level 4 compliance (±15 kV air, ±8 kV contact) and exhibits dynamic resistance of 0.36 Ω (GND→I/O) and 0.44 Ω (I/O→GND), ensuring stable voltage clamping under multi-amp ESD pulses.

Key Specifications

ParameterValue and Actual Design Meaning
Capacitance (I/O to GND)0.37 pF max - preserves signal integrity on 10 Gb/s USB 3.1 links with minimal rise-time degradation
Working Voltage (VRWM)3.3 V - compatible with standard 3.3 V I/O rails without leakage-induced bias shift
Breakdown Voltage (VBR)4.0–5.0 V @ 1 mA - ensures reliable turn-on before sensitive PHY circuitry reaches damage threshold
Clamping Voltage (VC)11.4 V @ +16 A TLP - limits transient overvoltage to safe levels for 1.2 V/1.8 V core logic interfaces
ESD Rating±15 kV IEC 61000−4−2 air/contact - meets automotive and industrial system-level immunity requirements
Operating Temp−55 °C to +125 °C - supports under-hood and industrial ambient operation with full parameter validity
PackageUDFN10 (2.5 × 1.0 mm, 0.5 mm pitch) - enables compact placement adjacent to USB/HDMI connectors

Pinout & Package

UDFN10 package (Case 517BB), 2.5 mm × 1.0 mm footprint, 0.5 mm pitch, exposed thermal pad (optional construction), Pb-free and RoHS compliant.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 4, 5I/O ChannelFour independent protected data lanes; bidirectional signal path with unidirectional ESD clamp to GND
3, 8Common GNDShared ground return for all four channels; minimum one connection required per device
6, 7, 9, 10No Connect (N/C)Unused terminals; must be left floating or tied to GND per layout guidelines-no internal connection

Key Features

FeatureDesign Value
Flow-through UDFN10 layoutEnables symmetric PCB routing for differential pairs (e.g., USB SSTX+/−), eliminating stub-induced impedance discontinuity
LVPT silicon technologyDelivers sub-4 V turn-on and low dynamic resistance (0.36 Ω), minimizing voltage overshoot during fast-rising ESD events
AEC-Q101 qualificationValidated for automotive infotainment and ADAS interfaces requiring zero-defect reliability and PPAP documentation
0.15 dB RF insertion loss @ 5 GHzEnsures <1% signal attenuation on USB 3.1 Gen 2 (10 Gb/s) fundamental frequency, preserving eye opening and jitter margin
Matched trace-length supportPin 1–2 and Pin 4–5 spacing allows identical trace lengths for differential lanes, critical for HDMI 2.0 6 Gb/s timing alignment

Applications

USB 3.1 Gen 2 InterfaceHDMI 2.0 Interface

Use Scenario: Protecting SuperSpeed TX/RX differential lanes in laptop docking stations handling 10 Gb/s data streams.

IC Role / Device Role / Timing Role: ESD transient suppressor placed between AC coupling capacitors and Type-C connector, clamping ±15 kV discharges before reaching USB 3.1 PHY.

Use Value: Maintains >95% eye height and <0.3 UI jitter in 10 Gb/s eye diagrams (Fig. 11), preventing link training failures during hot-plug events.

Use Scenario: Shielding TMDS clock and data channels in 4K60 video transmission systems using HDMI 2.0 sources.

IC Role / Device Role / Timing Role: Unidirectional clamp on D0+/−, D1+/−, D2+/−, and CLK+/− lines, referenced to common chassis ground.

Use Value: Achieves <0.2 dB insertion loss at 3 GHz fundamental (Table 1), preserving HDMI 2.0's 6 Gb/s bandwidth and reducing bit error rate by 3 orders of magnitude.

eSATA InterfaceDisplayPort 1.4 Interface

Use Scenario: Safeguarding external SATA III (6 Gb/s) host controller ports in industrial RAID enclosures exposed to field ESD.

IC Role / Device Role / Timing Role: Four-channel ESD suppressor on TX+/− and RX+/− lanes, leveraging flow-through pinout to avoid skew between complementary signals.

Use Value: Enables pass/fail compliance with IEC 61000−4−2 Level 4 while maintaining SATA III's 600 MB/s throughput and <1 ns edge jitter.

Use Scenario: Protecting DisplayPort 1.4 (8.1 Gb/s per lane) source outputs in thin-client workstations with multi-monitor support.

IC Role / Device Role / Timing Role: Per-lane I/O-to-GND clamp on Main Link lanes 0–3, with common GND shared across all four channels.

Use Value: Delivers 0.37 pF capacitance and 11.4 V clamping at 16 A, preventing DP AUX channel latch-up and main link packet corruption during connector mating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ESD8104DMUTAGSame die, identical electrical specs, but marked with "DM" suffix indicating different date code and tape/reel packaging variantNo functional difference; both qualified to AEC-Q101 and rated for USB 3.1/HDMI 2.0Select based on inventory availability and traceability requirements-both meet identical design-in criteria
TPD4E05U06DQAR0.5 pF max capacitance, ±12 kV IEC 61000−4−2, 3.6 V VRWM, SOT-563 package (1.6 × 1.6 mm)Higher capacitance limits use to ≤5 Gb/s (USB 3.0), larger footprint increases trace length asymmetry riskPrefer SZESD8104MUTAG for 10 Gb/s designs; TPD4E05U06DQAR suitable only where space constraints preclude UDFN10 placement

Compared with ESD8104DMUTAG (identical function, alternate marking) and TPD4E05U06DQAR (higher capacitance, lower ESD rating), SZESD8104MUTAG uniquely balances 0.37 pF capacitance, ±15 kV robustness, and flow-through UDFN10 layout-making it the only choice for production-grade 10 Gb/s differential interface protection with AEC-Q101 compliance.

Availability

SZESD8104MUTAG is available at Aetrix Electronics and suitable for USB 3.1 Gen 2 docking stations, HDMI 2.0 broadcast monitors, and automotive infotainment head units requiring stable component supply and long-term lifecycle assurance.

Supply support for SZESD8104MUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The ESD8100 series-including SZESD8104MUTAG-is engineered specifically for ultra-high-speed digital interfaces, using LVPT technology to protect sub-28 nm SoCs from soft failures caused by ESD-induced voltage spikes without compromising signal fidelity.

FAQ

What is the maximum clamping voltage of SZESD8104MUTAG under IEC 61000−4−2 Level 4 stress?

The SZESD8104MUTAG clamps to 11.4 V at +16 A TLP current, which corresponds to the IEC 61000−4−2 Level 4 (±8 kV contact) waveform's secondary peak. This value is measured per Figure 5 and Table on page 2 of the official datasheet, confirming its ability to limit transient overvoltage to safe levels for 3.3 V I/O circuits. The SZESD8104MUTAG achieves this with low dynamic resistance (0.36 Ω) and fast LVPT turn-on behavior.

Is SZESD8104MUTAG suitable for bidirectional high-speed data lines like USB 3.1 differential pairs?

Yes-SZESD8104MUTAG is unidirectional (I/O-to-GND only) but fully supports bidirectional signaling on differential lanes such as USB 3.1 SSTX+/− because each I/O pin clamps negative transients to GND while allowing full-swing positive signals to pass unaffected. Its 3.3 V VRWM and 4.0–5.0 V VBR ensure no conduction during normal 3.3 V logic operation. The SZESD8104MUTAG's flow-through pinout preserves differential balance critical for 10 Gb/s eye integrity.

Does SZESD8104MUTAG require external biasing or series resistors for USB 3.1 protection?

No-SZESD8104MUTAG operates passively with no external components required. Its 3.3 V VRWM matches standard USB 3.1 I/O voltage rails, and its 0.37 pF capacitance introduces negligible loading (<< 0.5% impedance change at 5 GHz). Layout guidelines recommend placement between AC coupling capacitors and the connector, but no series resistors, pull-ups, or bias networks are needed. The SZESD8104MUTAG integrates all necessary protection into a single, self-contained device.

How does the UDFN10 package of SZESD8104MUTAG improve PCB layout for HDMI 2.0 designs?

The UDFN10 package of SZESD8104MUTAG features a flow-through pinout (I/O–I/O–GND–I/O–I/O–GND) that enables straight-through routing of HDMI 2.0 TMDS differential pairs-eliminating stubs, vias, or bends that cause impedance mismatch. With 2.5 mm × 1.0 mm footprint and 0.5 mm pitch, it allows matched trace lengths within ±50 µm, critical for maintaining <0.1 UI skew at 6 Gb/s. The SZESD8104MUTAG's mechanical outline (Case 517BB) is optimized for automated placement and reflow in high-density video interface layouts.

What AEC-Q101 test conditions apply to SZESD8104MUTAG, and is PPAP documentation available?

SZESD8104MUTAG is AEC-Q101 qualified per stress test conditions including temperature cycling (−55 °C to +125 °C, 1000 cycles), high-temperature operating life (1000 hrs at +125 °C), and ESD robustness (HBM ≥ 8 kV, MM ≥ 400 V). PPAP documentation-including part submission warrant, process flow, control plan, and test reports-is available upon request for automotive customers. The "SZ" prefix in SZESD8104MUTAG explicitly denotes AEC-Q101 qualification and PPAP capability per onsemi's product marking convention.

SZESD8104MUTAG Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
10-UFDFN
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
4
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.3V (Max)
Voltage - Breakdown (Min):
4V
Voltage - Clamping (Max) @ Ipp:
11.4V (Typ)
Current - Peak Pulse (10/1000µs):
16A
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
HDMI, USB
Capacitance @ Frequency:
0.3pF @ 1MHz
Operating Temperature:
-55°C ~ 125°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
10-UDFN (2.5x1)

SZESD8104MUTAG FAQ

1.How can I place an order for SZESD8104MUTAG through Aetrix?

Please submit a Request for Quotation (RFQ) for SZESD8104MUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SZESD8104MUTAG reliable?

The price and inventory of SZESD8104MUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD8104MUTAG is usually 5 days.

3.What payment methods are accepted for SZESD8104MUTAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD8104MUTAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SZESD8104MUTAG?

SZESD8104MUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SZESD8104MUTAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SZESD8104MUTAG?

For technical support, including SZESD8104MUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD8104MUTAG requirements.

6.How does Aetrix verify that SZESD8104MUTAG is sourced from the original manufacturer or authorized distributors?

All SZESD8104MUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD8104MUTAG meets industry standards.

7.What is the process for return or replacement of SZESD8104MUTAG?

All SZESD8104MUTAG units undergo pre-shipment inspection (PSI). If there is an issue with SZESD8104MUTAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SZESD8104MUTAG part is unused and in its original packaging.

Return procedure for SZESD8104MUTAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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