Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi SZESD8351HT1G

Part No.:
SZESD8351HT1G
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
SC-76, SOD-323
Datasheet:
AetrixSZESD8351HT1G.pdf
Description:
TVS DIODE 3.3VWM 11.2VC SOD323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,342

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SZESD8351HT1G from onsemi is a low-capacitance ESD protection diode designed for high-speed data line protection in USB 2.0 and eSATA interfaces. It features 0.55 pF maximum junction capacitance, 3.3 V reverse working voltage, ±15 kV IEC 61000-4-2 contact ESD rating, 8.2 V clamping voltage at 5 A, and SOD-323 package with cathode/anode pinout.

For engineers reviewing the SZESD8351HT1G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, automotive-grade AEC-Q101 qualification, latch-up-free operation in USB 2.0 HS/FS, and verified IEC/ISO compliance for system-level ESD robustness.

Technical Context

The SZESD8351HT1G employs a snap-back SCR-based structure optimized for transient suppression without latch-up in USB 2.0 full-speed and high-speed data lines. Its dynamic resistance of 0.62 Ω (Pin1→Pin2) and 0.59 Ω (Pin2→Pin1) enables precise clamping control during 8/20 µs pulses up to 5 A peak current.

It operates across −55 °C to +125 °C junction temperature range and meets IEC 61000-4-2 Level 4 (±15 kV air), ISO 10605 (±30 kV), and AEC-Q101 stress requirements. The device is Pb-free, halogen-free, and RoHS compliant with SOD-323 mechanical outline (1.70 × 1.25 × 0.85 mm).

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Working Voltage3.3 V - Ensures safe operation on 3.3 V I/O rails without leakage or conduction during normal signaling.
Junction Capacitance0.55 pF max @ 1 MHz - Minimizes signal distortion and insertion loss in USB 2.0 (480 Mbps) and eSATA (3 Gbps) channels.
Clamping Voltage8.2 V @ 5 A, 8/20 µs - Limits transient overvoltage to protect downstream PHY transceivers and controller I/O cells.
ESD Rating±15 kV contact per IEC 61000-4-2 Level 4 - Validates robustness against human-body-model ESD events in end-equipment testing.
Breakdown Voltage5.5–7.8 V @ 1 mA - Provides margin above 3.3 V rail while enabling fast turn-on during ESD transients.
Operating Temperature−55 °C to +125 °C - Supports automotive under-hood and industrial ambient environments without derating.

Pinout & Package

SZESD8351HT1G is housed in a SOD-323 surface-mount package (1.70 × 1.25 × 0.85 mm), featuring a polarity band marking for cathode identification and lead-free termination compatible with standard reflow profiles (260 °C, 10 s).

Pin/TerminalCircuit RoleDesign Meaning
1CathodeConnected to system ground (GND); serves as ESD current sink path during positive transients on I/O line.
2AnodeConnected to protected high-speed data line (e.g., USB D+ or D−); conducts during negative ESD events.

Key Features

FeatureDesign Value
Ultra-low capacitance0.55 pF max ensures <0.1 dB insertion loss at 2.5 GHz, preserving eye diagram integrity in USB 2.0 HS mode.
AEC-Q101 qualifiedValidated for automotive applications including infotainment USB ports, meeting stress test requirements for temperature cycling, HTRB, and ESD.
Latch-up free operationVerified for USB 2.0 LS/FS/HS per Table 1; avoids destructive sustained conduction after ESD event in defined load-line conditions.
Bi-directional clampingProtects both positive and negative ESD transients on single data line using integrated dual-diode configuration.

Applications

USB 2.0 Interface ProtectioneSATA Data Line Protection

Use Scenario: Protecting D+ and D− differential pair in portable USB host controllers and peripheral devices exposed to frequent handling.

IC Role / Device Role / Timing Role: Standalone bi-directional ESD clamp placed adjacent to USB connector to shunt transients before reaching PHY IC.

Use Value: Maintains 480 Mbps data rate integrity with <0.55 pF loading and clamps ±15 kV ESD to ≤8.2 V, preventing PHY latch-up or damage.

Use Scenario: Shielding eSATA TX/RX lines in external storage enclosures subjected to cable hot-plug and bench ESD events.

IC Role / Device Role / Timing Role: Discrete ESD suppressor mounted at connector entry point to absorb IEC 61000-4-2 Level 4 surges before signal conditioning circuitry.

Use Value: Enables reliable 3 Gbps link operation with sub-1 pF capacitance and 11.2 V clamping at 16 A TLP, meeting SATA-IO ESD compliance thresholds.

Automotive Infotainment USB PortsIndustrial Embedded Controller I/O

Use Scenario: Securing front-panel USB charging/data ports in vehicle head units operating across −40 °C to +105 °C ambient.

IC Role / Device Role / Timing Role: AEC-Q101-compliant ESD guard for USB 2.0 interface, co-located with common-mode choke and TVS array.

Use Value: Guarantees functional safety during ESD exposure per ISO 10605 (±30 kV) while sustaining operation over full automotive temperature range.

Use Scenario: Hardening RS-485 or CAN FD auxiliary debug ports on programmable logic controllers in factory automation cabinets.

IC Role / Device Role / Timing Role: Low-capacitance transient suppressor on isolated data lines where signal rise time (<1 ns) demands minimal parasitic loading.

Use Value: Delivers 3.3 V rail compatibility and 0.55 pF capacitance to avoid timing skew or jitter degradation in multi-drop serial buses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ESD8004MUT5G0.35 pF typical capacitance; X3DFN2 (0.62 × 0.32 mm) package; lower 0.45 pF max.Optimized for USB 3.0 SS and DisplayPort; higher density layout but requires different footprint.Select when board space is constrained and USB 3.0 compatibility is required; not drop-in for SOD-323 layouts.
SZESD8006MUT5G0.5 pF max capacitance; same X3DFN2 package; rated for 12 A peak pulse current.Targeted for HDMI 1.4 TMDS lanes and higher-current interfaces; includes enhanced latch-up immunity.Choose for HDMI or MIPI D-PHY protection where higher surge capability and latch-up margin are critical.

Compared with SZESD8351HT1G, ESD8004MUT5G offers lower capacitance in a smaller footprint but requires PCB redesign, while SZESD8006MUT5G provides higher surge rating and HDMI suitability at the cost of slightly larger capacitance-neither is pin-compatible with the SOD-323-mounted SZESD8351HT1G.

Availability

SZESD8351HT1G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, automotive infotainment systems, and industrial embedded controller I/O requiring stable component supply and long-term lifecycle support.

Supply support for SZESD8351HT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The ESD8351 Series is part of onsemi's precision ESD protection portfolio, engineered specifically for high-speed serial interfaces where signal fidelity and latch-up immunity are critical design constraints.

FAQ

Is SZESD8351HT1G qualified for automotive applications?

Yes, SZESD8351HT1G carries the "SZ" prefix indicating AEC-Q101 qualification and PPAP capability. It has been validated for automotive infotainment USB ports, supporting operation from −55 °C to +125 °C junction temperature and passing all required stress tests including temperature cycling, HTRB, and ESD per ISO 10605.

What is the maximum clamping voltage of SZESD8351HT1G under IEC 61000-4-2 Level 4 stress?

The SZESD8351HT1G clamps to 11.2 V at 16 A peak pulse current, which corresponds to IEC 61000-4-2 Level 4 (±15 kV air discharge). This value is measured using TLP methodology per Figures 2 and 11 in the official datasheet and ensures downstream ICs remain within safe voltage limits during worst-case ESD events.

Can SZESD8351HT1G be used for HDMI 1.4 TMDS line protection?

No, SZESD8351HT1G is not recommended for HDMI 1.4 TMDS applications due to latch-up risk. As confirmed in Figure 7 and Table 1 of the datasheet, HDMI 1.4 requires higher holding current (IH ≥ 54.78 mA) and specific SCR characteristics that SZESD8351HT1G does not meet. Use ESD8104 or ESD8040 instead for HDMI-compliant protection.

What is the junction capacitance of SZESD8351HT1G at 2.5 GHz?

The junction capacitance of SZESD8351HT1G is 0.45 pF maximum at 2.5 GHz, as specified in the Electrical Characteristics table on page 2 of the datasheet. This ultra-low RF capacitance ensures minimal impact on signal integrity for high-speed protocols like USB 2.0 HS and eSATA.

Does SZESD8351HT1G have a polarity marking, and how is it oriented on the PCB?

Yes, SZESD8351HT1G uses SOD-323 package with a cathode polarity band (marked as a stripe) on Pin 1. When mounted on PCB, the band aligns with the designated cathode pad (connected to GND), and Pin 2 (anode) connects to the protected data line-correct orientation is essential for proper bi-directional clamping function.

SZESD8351HT1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
SC-76, SOD-323
Series:
ESD8351
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.3V (Max)
Voltage - Breakdown (Min):
5.5V
Voltage - Clamping (Max) @ Ipp:
11.2V
Current - Peak Pulse (10/1000µs):
5A (8/20µs)
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
0.4pF @ 1MHz
Operating Temperature:
-55°C ~ 125°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-323

SZESD8351HT1G FAQ

1.How can I place an order for SZESD8351HT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for SZESD8351HT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SZESD8351HT1G reliable?

The price and inventory of SZESD8351HT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD8351HT1G is usually 5 days.

3.What payment methods are accepted for SZESD8351HT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD8351HT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SZESD8351HT1G?

SZESD8351HT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SZESD8351HT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SZESD8351HT1G?

For technical support, including SZESD8351HT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD8351HT1G requirements.

6.How does Aetrix verify that SZESD8351HT1G is sourced from the original manufacturer or authorized distributors?

All SZESD8351HT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD8351HT1G meets industry standards.

7.What is the process for return or replacement of SZESD8351HT1G?

All SZESD8351HT1G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD8351HT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SZESD8351HT1G part is unused and in its original packaging.

Return procedure for SZESD8351HT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SZESD8351HT1G Tags

  • SZESD8351HT1G
  • SZESD8351HT1G PDF
  • SZESD8351HT1G Datasheet
  • SZESD8351HT1G Specifications
  • SZESD8351HT1G Images
  • onsemi
  • onsemi SZESD8351HT1G
  • Buy SZESD8351HT1G
  • SZESD8351HT1G Price
  • SZESD8351HT1G Distributor
  • SZESD8351HT1G Supplier
  • SZESD8351HT1G Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER