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onsemi SZESD8351P2T5G
- Part No.:
- SZESD8351P2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SOD-923
- Datasheet:
-
SZESD8351P2T5G.pdf
- Description:
- TVS DIODE 3.3VWM 11.2VC SOD923
- Quantity:
- Payment:
- Shipping:
Inventory:28,922
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Product details
Overview
SZESD8351P2T5G from onsemi is an ultra-low-capacitance (0.55 pF max), AEC-Q101-qualified ESD protection diode designed for high-speed data lines including USB 2.0 and eSATA, with 3.3 V reverse working voltage, ±15 kV IEC 61000-4-2 contact ESD rating, and 5.7 V clamping voltage at 5 A.
For engineers reviewing the SZESD8351P2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include low capacitance for signal integrity, latch-up-free operation in USB 2.0 HS/FS, automotive-grade qualification, and SOD-923 package compatibility with high-density PCB layouts.
Technical Context
The SZESD8351P2T5G employs a snap-back SCR-based structure optimized for fast transient response and low clamping voltage, enabling robust protection without compromising signal fidelity on 480 Mbps USB 2.0 lines. Its dynamic resistance of 0.44 Ω (Pin1→Pin2) and junction capacitance of 0.37 pF at 1 MHz ensure minimal insertion loss and RF transparency up to 2.5 GHz.
This device is explicitly validated for latch-up-free operation in USB 2.0 LS/FS, HS, USB 3.0 SS, and DisplayPort interfaces per load-line analysis, but excluded from HDMI 1.4/1.3a TMDS due to latch-up risk - a distinction confirmed in Table 1 and Figure 7 of the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage | 3.3 V - sets maximum continuous DC bias before leakage rise; matches USB 2.0 I/O rail voltage |
| Clamping Voltage @ 5 A | 5.7 V - limits transient overvoltage seen by protected IC during 8/20 µs surge, preserving downstream logic |
| Junction Capacitance | 0.37 pF @ 1 MHz - ensures <0.1 dB insertion loss at 480 MHz, critical for USB 2.0 eye diagram integrity |
| ESD Rating | ±15 kV contact per IEC 61000-4-2 Level 4 - exceeds industrial and automotive system-level immunity requirements |
| Operating Temperature | −55 °C to +125 °C - supports under-hood and industrial ambient conditions without derating |
| AEC-Q101 Qualified | Yes - validated for automotive electronics per stress test requirements, including temperature cycling and HTRB |
Pinout & Package
SOD-923 package (Case 514AB), 0.80 mm × 0.60 mm × 0.37 mm, surface-mount, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Connected to protected I/O line; conducts ESD current to GND during positive transients |
| Pin 2 | Anode | Connected to GND; completes low-impedance path for ESD energy dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.37 pF typical at 1 MHz - preserves signal edge rate and minimizes jitter on 480 Mbps USB 2.0 links |
| Latch-up free for USB 2.0 | Validated via load-line analysis per Figure 7 - eliminates risk of sustained conduction after ESD event |
| Automotive qualification | AEC-Q101 compliant with PPAP capability - enables direct use in Tier-1 automotive modules without requalification |
| Low clamping voltage | 5.7 V at 5 A - keeps protected IC's I/O voltage below absolute maximum ratings during worst-case ESD strikes |
Applications
| USB 2.0 Interface Protection | eSATA Data Line Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines of USB 2.0 host/device ports against contact ESD events in portable and automotive infotainment systems. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector, shunting ESD current to GND before reaching USB transceiver. Use Value: Maintains 480 Mbps data integrity with <0.37 pF loading and prevents latch-up in HS/FS modes per Table 1. | Use Scenario: Safeguarding eSATA differential pair (TX/RX) in external storage enclosures exposed to user-handling ESD per IEC 61000-4-2 Level 4. IC Role / Device Role / Timing Role: Low-capacitance clamp on each line, referenced to chassis GND, ensuring signal rise/fall times remain within SATA Gen I spec. Use Value: 5.7 V clamping at 5 A prevents damage to SATA PHY while 0.55 pF max capacitance avoids signal reflection at 1.5 Gbps. |
| Automotive Body Control Module | Industrial USB Hub Protection |
Use Scenario: ESD hardening of USB ports in vehicle body control units operating across −40 °C to +105 °C ambient. IC Role / Device Role / Timing Role: AEC-Q101-qualified discrete protector mounted adjacent to USB receptacle, providing system-level pass-fail compliance. Use Value: −55 °C to +125 °C junction range and PPAP support enable drop-in integration without thermal derating or process revalidation. | Use Scenario: Protecting upstream/downstream USB 2.0 ports in DIN-rail-mounted industrial hubs deployed in factory automation environments. IC Role / Device Role / Timing Role: High-reliability ESD clamp on each data line, rated for repeated ±15 kV contact discharges per maintenance cycles. Use Value: 0.37 pF capacitance prevents bit-error-rate degradation over 10,000+ hot-plug events; RoHS/BFR-free construction meets EU industrial directives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD8004MUTAG | 0.5 pF max capacitance; 3.6 V VRWM; ±12 kV IEC 61000-4-2 contact rating | Rated for USB 2.0 LS/FS/HS and DisplayPort, but not AEC-Q101 qualified | Preferred for cost-sensitive industrial USB designs where automotive qualification is unnecessary |
| ESD8351N2T5G | X2DFN2 package (1.0 × 0.6 mm); identical electrical specs; in development per datasheet page 6 | Same protection performance, but different footprint - requires PCB layout change | Select when board space allows larger pad geometry and future-proofing for alternate packaging is prioritized |
Compared with ESD8004MUTAG, SZESD8351P2T5G delivers higher ESD immunity (±15 kV vs ±12 kV) and automotive qualification; versus ESD8351N2T5G, it offers immediate availability in SOD-923 and proven production maturity, though with slightly smaller thermal mass.
Availability
SZESD8351P2T5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, automotive body control modules, and industrial USB hub protection requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.
Supply support for SZESD8351P2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
SZESD8351P2T5G belongs to the ESD8000 series of snap-back SCR-based protection devices, engineered specifically for latch-up-free, ultra-low-capacitance ESD suppression on high-speed serial interfaces.
FAQ
What is the maximum clamping voltage of SZESD8351P2T5G under IEC 61000-4-2 Level 4 ESD stress?
The SZESD8351P2T5G exhibits a clamping voltage of 8.3 V at 16 A peak pulse current, which corresponds to IEC 61000-4-2 Level 4 (±15 kV air discharge). This value is measured using TLP testing per ANSI/ESD STM5.5.1 and confirmed in the Electrical Characteristics table on page 2 of the datasheet.
Is SZESD8351P2T5G suitable for HDMI 1.4 TMDS lines?
No, SZESD8351P2T5G is explicitly excluded for HDMI 1.4/1.3a TMDS applications due to latch-up risk, as stated in Figure 7 and Table 1 of the datasheet. For HDMI, onsemi recommends ESD8104 or ESD8040 - devices with higher holding voltage and latch-up mitigation design.
What package type and dimensions does SZESD8351P2T5G use?
SZESD8351P2T5G uses the SOD-923 package (Case 514AB), measuring 0.80 mm × 0.60 mm × 0.37 mm with a 0.65 mm pitch. Pin 1 is the cathode (marked with polarity band), and Pin 2 is the anode - verified in the Marking Diagram and Package Dimensions sections on pages 7 and 8.
Does SZESD8351P2T5G meet automotive qualification standards?
Yes, SZESD8351P2T5G is AEC-Q101 qualified and PPAP capable, as confirmed in the Features section (page 1) and Ordering Information (page 6). The "SZ" prefix denotes automotive-grade manufacturing controls, site-specific change management, and extended reliability testing.
What is the junction capacitance of SZESD8351P2T5G at 2.5 GHz?
The junction capacitance of SZESD8351P2T5G is 0.45 pF at 2.5 GHz and 0 V bias, as specified in the Electrical Characteristics table on page 2. This ultra-low RF capacitance ensures minimal signal distortion on high-speed data lines such as USB 2.0 and eSATA.
SZESD8351P2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SOD-923
- Series:
- ESD8351
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 5A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 0.37pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-923
SZESD8351P2T5G FAQ
1.How can I place an order for SZESD8351P2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESD8351P2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESD8351P2T5G reliable?
The price and inventory of SZESD8351P2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESD8351P2T5G is usually 5 days.
3.What payment methods are accepted for SZESD8351P2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESD8351P2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESD8351P2T5G?
SZESD8351P2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESD8351P2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESD8351P2T5G?
For technical support, including SZESD8351P2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESD8351P2T5G requirements.
6.How does Aetrix verify that SZESD8351P2T5G is sourced from the original manufacturer or authorized distributors?
All SZESD8351P2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESD8351P2T5G meets industry standards.
7.What is the process for return or replacement of SZESD8351P2T5G?
All SZESD8351P2T5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESD8351P2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESD8351P2T5G part is unused and in its original packaging.
Return procedure for SZESD8351P2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZESD8351P2T5G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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