My Inquiry
My Account
onsemi SZESDM3551N2T5G
- Part No.:
- SZESDM3551N2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
SZESDM3551N2T5G.pdf
- Description:
- BIDIRECTIONAL 5V MID-CAP SURGE I
- Quantity:
- Payment:
- Shipping:
Inventory:3,778
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SZESDM3551N2T5G from onsemi is a bidirectional TVS diode designed for IEC 61000−4−2 Level 4 ESD protection of voltage-sensitive signal lines, featuring 5.5 V stand-off voltage, 21 pF junction capacitance at 0 V, 6.0 V clamping voltage at 1 A, and 8.2 V clamping voltage at 8 A peak pulse current - deployed in USB ID line, SD card, audio line, and GPIO protection.
For engineers reviewing the SZESDM3551N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include low-capacitance transient suppression (21 pF), automotive-grade AEC−Q101 qualification, 0402 X2DFN2 package footprint, and ±30 kV IEC contact/air ESD robustness.
Technical Context
The SZESDM3551N2T5G implements a symmetric bidirectional clamping structure with breakdown voltage of 5.6–7.0 V at 1 mA, enabling equal protection against positive and negative transients. Its dynamic resistance of 0.11 Ω (TLP) ensures rapid voltage stabilization during fast-rising ESD events.
Designed for high-frequency signal integrity, it delivers 0.01 dB insertion loss at 10 MHz and maintains stable capacitance across frequency - critical for preserving signal fidelity on high-speed data lines like USB and SD interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 5.5 V - blocks normal operating signals up to this DC/reverse voltage without leakage conduction. |
| Clamping Voltage @ 1 A | 6.0 V - limits transient voltage seen by protected IC to ≤6.0 V during 8/20 µs surge. |
| Clamping Voltage @ 8 A | 8.2 V - maintains sub-9 V clamping under severe IEC-level surges, safeguarding 3.3 V/5 V logic. |
| Junction Capacitance | 21 pF at 0 V, 1 MHz - enables use on USB 2.0 and SD card lines without signal degradation. |
| ESD Rating | ±30 kV contact & air (IEC 61000−4−2 Level 4) - exceeds industrial and automotive immunity requirements. |
| Peak Pulse Current | 9.9 A (8/20 µs) - sustains multiple high-energy transients without parametric shift or failure. |
| Leakage Current | 0.1 µA @ 5.5 V - minimizes power drain on battery-powered GPIO and sensor interfaces. |
Pinout & Package
Package: X2DFN2 (0402), 1.00 mm × 0.60 mm × 0.37 mm body, 0.65 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode/Cathode (bidirectional) | Common terminal for symmetrical clamping - connects to protected signal line (e.g., USB ID). |
| 2 | Anode/Cathode (bidirectional) | Common terminal tied to ground plane - completes low-inductance ESD current path. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal lines without polarity constraints. |
| 21 pF capacitance | Preserves signal integrity on 480 Mbps USB 2.0 and 104 MHz SD card clock/data lines. |
| AEC−Q101 qualified | Validated for automotive infotainment, ADAS sensor interfaces, and body control modules. |
| 0.01 dB insertion loss | Ensures negligible RF attenuation in antenna switch or audio codec signal paths. |
| 0402 footprint | Reduces PCB area by >50% vs. 0603 alternatives while maintaining thermal dissipation margin. |
Applications
| USB ID Line Protection | SD Card Protection |
|---|---|
Use Scenario: Protecting USB On-The-Go (OTG) ID pin from ESD during cable insertion/removal in portable devices. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed between ID pin and system ground. Use Value: Prevents latch-up or gate oxide damage in USB PHY ICs while adding only 21 pF loading. |
Use Scenario: Shielding SD card interface pins (CMD, CLK, DAT0–DAT3) from handling ESD in handheld terminals. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on each signal line, grounded via shortest possible trace. Use Value: Maintains 104 MHz SD mode timing margins with <0.01 dB insertion loss at operating frequency. |
| Audio Line Protection | GPIO Protection |
Use Scenario: Safeguarding analog audio inputs/outputs (e.g., headset jack) in smartphones and wearables. IC Role / Device Role / Timing Role: Signal-line ESD suppressor with minimal capacitive loading to avoid bass roll-off. Use Value: 21 pF capacitance avoids audible distortion below 20 Hz while passing ±30 kV ESD pulses. |
Use Scenario: Hardening general-purpose I/O pins on microcontrollers exposed to user-accessible connectors. IC Role / Device Role / Timing Role: Standby-mode protector with 0.1 µA leakage to preserve battery life in sleep states. Use Value: Enables reliable wake-on-ESD functionality without compromising quiescent current budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD9B5.0ST5G | Unidirectional, 5.0 V VRWM, 15 pF capacitance, SOD-923 package (1.0 × 0.6 × 0.4 mm) | Requires separate anode/cathode routing; unsuitable for AC-coupled or floating lines. | Select when lower capacitance is prioritized and signal polarity is fixed. |
| TPD2E001DRYR | Bi-directional, 5.5 V VRWM, 12 pF capacitance, X2SON package (1.0 × 0.6 × 0.5 mm), integrated RC filter | Includes 56 Ω series resistor - adds propagation delay; not for high-speed data lines. | Prefer for low-noise analog inputs where filtering is needed, not for USB/SD timing-critical paths. |
Compared with ESD9B5.0ST5G and TPD2E001DRYR, the SZESDM3551N2T5G offers balanced bidirectional clamping with optimal 21 pF/6.0 V trade-off for high-speed digital interfaces, whereas alternatives sacrifice either symmetry, speed compatibility, or layout simplicity.
Availability
SZESDM3551N2T5G is available at Aetrix Electronics and suitable for USB ID line protection, SD card interface hardening, and automotive-grade GPIO ESD suppression requiring stable component supply and long-term lifecycle support.
Supply support for SZESDM3551N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESDM3551 family is engineered specifically for ultra-compact, high-fidelity ESD protection of high-speed serial interfaces - balancing low capacitance, fast response, and automotive reliability in miniature DFN packages.
FAQ
What is the maximum working voltage supported by the SZESDM3551N2T5G?
The SZESDM3551N2T5G has a working peak reverse voltage (VRWM) of 5.5 V, meaning it reliably blocks DC and signal voltages up to this level during normal operation without conducting. This makes it compatible with 3.3 V and 5 V logic systems, including USB, SD, and GPIO interfaces where rail voltage does not exceed 5.5 V.
Is the SZESDM3551N2T5G suitable for automotive applications?
Yes, the SZESDM3551N2T5G is AEC−Q101 qualified and PPAP capable, with the "SZ" prefix indicating compliance for automotive and other high-reliability applications. It meets stringent temperature cycling, humidity, and ESD stress requirements defined in the AEC standard, making it appropriate for infotainment, telematics, and body electronics modules.
How does the 21 pF junction capacitance of the SZESDM3551N2T5G affect USB 2.0 signal integrity?
The 21 pF junction capacitance of the SZESDM3551N2T5G is measured at 0 V and 1 MHz, and remains stable across frequency - resulting in only 0.01 dB insertion loss at 10 MHz. For USB 2.0 (480 Mbps), this capacitance introduces negligible rise-time degradation or eye-diagram closure when placed with short, controlled-impedance traces.
What is the clamping behavior of the SZESDM3551N2T5G under an 8 kV IEC 61000−4−2 contact discharge?
Under an 8 kV IEC 61000−4−2 contact discharge (equivalent to ±30 kV per datasheet), the SZESDM3551N2T5G clamps to 7.5 V (TLP-equivalent) with 16 A peak current. Its low dynamic resistance (0.11 Ω) ensures rapid voltage stabilization, limiting transient exposure to protected ICs well below damage thresholds for 3.3 V and 5 V interfaces.
Does the SZESDM3551N2T5G require external biasing or supporting components?
No, the SZESDM3551N2T5G is a passive bidirectional TVS diode requiring no external bias, resistors, or capacitors. It operates solely between the protected signal line (Pin 1) and ground (Pin 2), relying on its intrinsic PN junction characteristics for clamping - simplifying layout and reducing BOM count.
SZESDM3551N2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 8.2V
- Current - Peak Pulse (10/1000µs):
- 9.9A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- USB
- Capacitance @ Frequency:
- 21pF @ 1MHz (Max)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X2DFN (1x0.6)
SZESDM3551N2T5G FAQ
1.How can I place an order for SZESDM3551N2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZESDM3551N2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZESDM3551N2T5G reliable?
The price and inventory of SZESDM3551N2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZESDM3551N2T5G is usually 5 days.
3.What payment methods are accepted for SZESDM3551N2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZESDM3551N2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZESDM3551N2T5G?
SZESDM3551N2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZESDM3551N2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZESDM3551N2T5G?
For technical support, including SZESDM3551N2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZESDM3551N2T5G requirements.
6.How does Aetrix verify that SZESDM3551N2T5G is sourced from the original manufacturer or authorized distributors?
All SZESDM3551N2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZESDM3551N2T5G meets industry standards.
7.What is the process for return or replacement of SZESDM3551N2T5G?
All SZESDM3551N2T5G units undergo pre-shipment inspection (PSI). If there is an issue with SZESDM3551N2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZESDM3551N2T5G part is unused and in its original packaging.
Return procedure for SZESDM3551N2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZESDM3551N2T5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
