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onsemi SZMMBZ33VALT3G
- Part No.:
- SZMMBZ33VALT3G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SZMMBZ33VALT3G.pdf
- Description:
- TVS DIODE 26VWM 46VC SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:27,633
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Product details
Overview
SZMMBZ33VALT3G from onsemi is a dual common-anode Zener diode array in SOT-23 package, designed for transient overvoltage and ESD protection of two independent signal lines. It features a nominal 33 V breakdown voltage (±5%), 40 W peak pulse power (1 ms), clamping voltage of 46 V at 1.0 A peak pulse current, and IEC 61000-4-2 Level 4 ±30 kV contact discharge rating - deployed in automotive-grade interface protection for CAN, LIN, and sensor bus lines.
For engineers reviewing the SZMMBZ33VALT3G datasheet, pinout, applications, or equivalent options, key selection criteria include bidirectional/unidirectional configuration flexibility, AEC-Q101 qualification, low leakage (<50 nA @ 26 V), and dual-line protection in space-constrained PCB layouts.
Technical Context
This device integrates two monolithic Zener junctions sharing a common anode (Pin 3), enabling either two independent unidirectional clamps (Pins 1–3 and 2–3) or a single bidirectional clamp (Pins 1–2). Its 33 V nominal Zener voltage is specified at 1.0 mA test current with ±5% tolerance and +0.87 mV/°C temperature coefficient.
The 40 W peak pulse power rating applies under the Figure 6 rectangular waveform (1.0 ms, non-repetitive), with thermal resistance of 417 °C/W on alumina substrate. Clamping performance is validated at 46 V maximum for 1.0 A IPP, supporting robust transient suppression in automotive infotainment and body control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 33 V nominal, 31.35–34.65 V range @ IT = 1.0 mA - defines precise clamping threshold for overvoltage events |
| Peak Pulse Power (Ppk) | 40 W @ 1.0 ms per IEC 61000-4-5 waveform - sustains high-energy transients without failure |
| Clamping Voltage (VC) | 46 V max @ IPP = 1.0 A - ensures downstream ICs see <46 V during surge, critical for 3.3 V/5 V logic protection |
| ESD Rating | IEC 61000-4-2 Level 4: ±30 kV contact discharge - meets automotive ESD immunity requirements |
| Leakage Current (IR) | <50 nA @ VRWM = 26 V - minimizes standby power loss and signal distortion in high-impedance circuits |
| Package | SOT-23 (Case 318, Style 12) - 2.90 × 1.30 × 1.00 mm footprint enables high-density routing in compact ECUs |
| AEC-Q101 Qualified | Yes - certified for automotive applications including engine control, ADAS sensors, and gateway modules |
Pinout & Package
SOT-23 package (Case 318, Style 12) with gull-wing leads, Pb-free and RoHS compliant. Designed for automated placement and reflow soldering at 260 °C for 10 seconds.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode 1 | First Zener cathode - connects to protected line 1 in unidirectional mode or forms one terminal in bidirectional mode |
| Pin 2 | Cathode 2 | Second Zener cathode - connects to protected line 2 in unidirectional mode or forms opposite terminal in bidirectional mode |
| Pin 3 | Anode (Common) | Shared anode node - tied to GND or bias rail; enables dual-junction integration in single footprint |
Key Features
| Feature | Design Value |
|---|---|
| Dual common-anode topology | Protects two independent signal paths (e.g., CAN_H/CAN_L) with one SOT-23 device - reduces BOM count and board area by 50% vs. discrete diodes |
| IEC 61000-4-2 Level 4 compliance | ±30 kV contact discharge rating - exceeds automotive OEM ESD requirements for exterior interfaces and harness connectors |
| Low clamping ratio (VC/VBR) | 46 V / 33 V ≈ 1.39 - tight voltage margin ensures safe operation of 3.3 V microcontrollers and transceivers during surges |
| AEC-Q101 qualification | Validated for temperature cycling, humidity bias, and mechanical shock - supports 15-year automotive service life |
| Unidirectional/bidirectional configurability | Pins 1–3 and 2–3 support separate unidirectional clamping; Pins 1–2 enable bidirectional TVS for AC-coupled buses like USB or RS-485 |
Applications
| Automotive CAN Bus Protection | Industrial Sensor Interface |
|---|---|
|
Use Scenario: Protecting CAN_H and CAN_L lines in body control modules against load dump and ESD events. IC Role / Device Role / Timing Role: Dual-line transient voltage suppressor - clamps fast-rising transients before they reach the CAN transceiver. Use Value: Prevents communication errors and transceiver latch-up during 12 V system switching; maintains ISO 11898-2 compliance. |
Use Scenario: Shielding 4–20 mA current loop inputs in PLC analog input modules from field wiring surges. IC Role / Device Role / Timing Role: Bidirectional overvoltage clamp - placed across input terminals to shunt energy during lightning-induced transients. Use Value: Enables >1 kV surge immunity per IEC 61000-4-5, preserving measurement accuracy and preventing ADC saturation. |
| USB 2.0 Data Line Protection | Automotive LIN Bus Protection |
|
Use Scenario: Safeguarding D+ and D− lines in automotive infotainment USB ports against hot-plug ESD. IC Role / Device Role / Timing Role: Dual unidirectional Zener clamp - each cathode tied to respective data line, common anode grounded. Use Value: Limits voltage excursion to <46 V during ±15 kV air discharge, meeting USB-IF ESD stress test requirements. |
Use Scenario: Protecting LIN transceiver pins in door module ECUs from battery reverse polarity and jump-start spikes. IC Role / Device Role / Timing Role: Unidirectional clamp on LIN bus line - Pin 1–3 protects LIN signal, Pin 2–3 grounds auxiliary diagnostics line. Use Value: Withstands 40 W pulses up to 1 ms, preventing LIN bus lockup during 24 V jump-start events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Zener TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SZMMBZ33VALT1G | Same electrical specs but supplied in 3,000-unit tape-and-reel (vs. 10,000-unit for SZMMBZ33VALT3G); identical AEC-Q101 qualification and SOT-23 package | Preferred for prototyping and low-volume production where reel size impacts inventory turnover | Select SZMMBZ33VALT1G when smaller reels align with JIT assembly or evaluation needs |
| SMF33A | Single-channel 33 V TVS diode in SOD-123; 200 W peak power but no dual-line integration - requires two devices for same function | Used where higher single-line surge rating is prioritized over board space savings | Choose SMF33A only if 200 W per line is mandatory and PCB area is not constrained |
Compared with SZMMBZ33VALT1G, the SZMMBZ33VALT3G offers identical protection performance with optimized logistics for high-volume automotive manufacturing; versus SMF33A, it delivers dual-line integration at 40% smaller footprint but with lower per-line surge rating - making it ideal for space-limited, cost-sensitive dual-signal protection.
Availability
SZMMBZ33VALT3G is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface development, and USB/LIN bus protection requiring stable component supply across multi-year production cycles.
Supply support for SZMMBZ33VALT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier focused on energy-efficient innovation, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.
The MMBZ/SZMMBZ series targets compact, high-reliability transient suppression - engineered specifically for automotive-grade signal line protection where AEC-Q101 compliance, small form factor, and dual-junction efficiency are essential.
FAQ
What is the clamping voltage of SZMMBZ33VALT3G at its rated peak pulse current?
The SZMMBZ33VALT3G has a maximum clamping voltage (VC) of 46 V at a peak pulse current (IPP) of 1.0 A, measured using the 1.0 ms rectangular waveform defined in Figure 6 of the datasheet. This value ensures protected circuits remain below critical voltage thresholds during transient events, and it is guaranteed across the full operating temperature range of −55 °C to +150 °C. The SZMMBZ33VALT3G achieves this while maintaining low leakage and AEC-Q101 qualification.
Is SZMMBZ33VALT3G suitable for bidirectional signal line protection?
Yes, SZMMBZ33VALT3G supports bidirectional protection by connecting the two cathodes (Pins 1 and 2) to the differential signal pair and the common anode (Pin 3) to ground - forming a symmetrical clamp across the line. This configuration is validated for AC-coupled interfaces such as RS-485 and USB, and leverages the device's matched Zener characteristics. The SZMMBZ33VALT3G's 33 V nominal breakdown applies equally in both directions when used this way.
How does the SZMMBZ33VALT3G differ from the standard MMBZ33VALT3G variant?
The SZMMBZ33VALT3G differs from MMBZ33VALT3G solely in its qualification and traceability: it carries the "SZ" prefix indicating AEC-Q101 qualification, PPAP capability, and automotive-specific process controls, including enhanced site and change management. Electrically and physically, both share identical SOT-23 packaging, 33 V Zener voltage, 40 W peak power, and pinout. The SZMMBZ33VALT3G is required for automotive production; MMBZ33VALT3G is for commercial applications.
What is the maximum leakage current specification for SZMMBZ33VALT3G at its working voltage?
SZMMBZ33VALT3G specifies a maximum reverse leakage current (IR) of 50 nA at VRWM = 26 V, measured at TA = 25 °C. This ultra-low leakage preserves signal integrity in high-impedance sensor interfaces and minimizes standby power draw in always-on automotive modules. The value remains stable across temperature due to the device's monolithic dual-junction construction, and it is verified per the test conditions in the onsemi datasheet Section 3.
Can SZMMBZ33VALT3G be used in place of two discrete 33 V Zeners?
Yes - SZMMBZ33VALT3G replaces two discrete 33 V Zeners with identical electrical performance while occupying a single SOT-23 footprint. Its dual common-anode structure allows independent clamping of two lines (e.g., CAN_H and CAN_L) or bidirectional protection of one differential pair. Unlike discrete solutions, the SZMMBZ33VALT3G guarantees matched VBR and thermal coupling, improving consistency during simultaneous transients. No layout redesign is needed beyond adapting to the 3-pin SOT-23 pinout.
SZMMBZ33VALT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26V
- Voltage - Breakdown (Min):
- 31.35V
- Voltage - Clamping (Max) @ Ipp:
- 46V
- Current - Peak Pulse (10/1000µs):
- 870mA
- Power - Peak Pulse:
- 40W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SZMMBZ33VALT3G FAQ
1.How can I place an order for SZMMBZ33VALT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZMMBZ33VALT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZMMBZ33VALT3G reliable?
The price and inventory of SZMMBZ33VALT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZMMBZ33VALT3G is usually 5 days.
3.What payment methods are accepted for SZMMBZ33VALT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZMMBZ33VALT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZMMBZ33VALT3G?
SZMMBZ33VALT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZMMBZ33VALT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZMMBZ33VALT3G?
For technical support, including SZMMBZ33VALT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZMMBZ33VALT3G requirements.
6.How does Aetrix verify that SZMMBZ33VALT3G is sourced from the original manufacturer or authorized distributors?
All SZMMBZ33VALT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZMMBZ33VALT3G meets industry standards.
7.What is the process for return or replacement of SZMMBZ33VALT3G?
All SZMMBZ33VALT3G units undergo pre-shipment inspection (PSI). If there is an issue with SZMMBZ33VALT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZMMBZ33VALT3G part is unused and in its original packaging.
Return procedure for SZMMBZ33VALT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZMMBZ33VALT3G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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