My Inquiry
My Account
onsemi SZNZ8D16V4MX2WT5G
- Part No.:
- SZNZ8D16V4MX2WT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
SZNZ8D16V4MX2WT5G.pdf
- Description:
- TVS DIODE 13VWM 18VC 2-X2DFNW
- Quantity:
- Payment:
- Shipping:
Inventory:6,664
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SZNZ8D16V4MX2WT5G from onsemi is a bidirectional Zener ESD protection diode in an X2DFNW2 1.0 × 0.6 mm package, rated for ±30 kV IEC 61000-4-2 contact/air ESD, 13 V reverse working voltage, 18.0 V clamping voltage at 1.0 A, and 1 nA leakage at 13 V - deployed in automotive ECUs and IVN interfaces to safeguard CAN/LIN transceivers and sensor inputs.
For engineers reviewing the SZNZ8D16V4MX2WT5G datasheet, pinout, applications, or equivalent options, key selection criteria include bidirectional clamping performance, wettable flank package compatibility with AOI, AEC-Q101 qualification, and replacement capability for legacy SOT-23 dual-diode configurations in space-constrained automotive signal lines.
Technical Context
The SZNZ8D16V4MX2WT5G implements a symmetric, single-channel Zener-based TVS structure enabling bidirectional transient suppression without polarity dependency. Its breakdown voltage is specified at 15.9–17.5 V (min–max) at 1 mA, with clamping voltage tightly controlled at 18.0 V under 1.0 A 8/20 µs pulse conditions.
Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and features a wettable flank X2DFNW2 package optimized for solder-joint inspection. It replaces larger 3-pin dual-diode solutions while maintaining identical functional behavior across both polarities of transient events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating (IEC 61000-4-2) | ±30 kV contact & air - ensures robust immunity against human-body model discharges in automotive assembly and field operation |
| Reverse Working Voltage (VRWM) | 13.0 V - defines maximum continuous DC voltage applied without triggering conduction in normal operation |
| Clamping Voltage (VC) | 18.0 V @ IPP = 1.0 A - limits peak voltage seen by protected IC during fast transients, critical for 12 V rail interface safety |
| Breakdown Voltage (VBR) | 15.9–17.5 V @ IT = 1 mA - establishes precise turn-on threshold for symmetrical bidirectional clamping |
| Leakage Current (IR) | ≤10.0 nA @ VRWM = 13 V - minimizes standby power loss and avoids false triggering in low-current sensor circuits |
| Package | X2DFNW2 (1.0 × 0.6 × 0.37 mm, 0.65 mm pitch) - ultra-compact footprint with wettable flanks for automated optical solder inspection |
Pinout & Package
X2DFNW2 is a 2-terminal, bottom-side thermal pad-free, no-lead surface-mount package with exposed copper flanks for AOI. Dimensions: 1.00 mm × 0.60 mm × 0.37 mm, pitch 0.65 mm, case outline 711BG.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode/Cathode (bidirectional) | Shared terminal for symmetrical Zener conduction - connects to protected signal line |
| Terminal 2 | Anode/Cathode (bidirectional) | Shared terminal for symmetrical Zener conduction - connects to ground or reference plane |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping architecture | Enables single-device protection of AC-coupled or differential signals without polarity constraints |
| Wettable flank geometry | Supports automated optical inspection of solder fillets on both side edges, improving manufacturing yield in automotive SMT lines |
| AEC-Q101 qualification | Validated for automotive electronics use including engine control units, body controllers, and infotainment gateways |
| Ultra-low leakage (≤10 nA) | Prevents loading of high-impedance sensor outputs and preserves accuracy in precision analog front-ends |
Applications
| Automotive ECU Protection | In-Vehicle Networking (IVN) |
|---|---|
Use Scenario: Protecting microcontroller GPIOs and LIN bus pins in engine control modules exposed to load dump and ESD during service. IC Role / Device Role: Bidirectional transient voltage suppressor placed between signal line and chassis ground. Use Value: Limits induced transients to ≤18.0 V during ±30 kV ESD events, preventing latch-up or damage to 5 V/3.3 V logic interfaces. | Use Scenario: Shielding CAN FD physical layer receivers from coupling noise and electrostatic discharge in ADAS domain controllers. IC Role / Device Role: Signal-line ESD clamp on CAN_H/CAN_L differential pair inputs. Use Value: Maintains signal integrity under ISO 10605 330 pF/330 Ω pulses while adding <0.1 pF parasitic capacitance. |
| Voltage-Sensitive Sensor Interfaces | Infotainment System USB/UART Lines |
Use Scenario: Safeguarding thermistor, pressure, or position sensor analog outputs connected to ADC inputs in climate control systems. IC Role / Device Role: Low-leakage Zener clamp on analog signal path to prevent overvoltage-induced offset drift. Use Value: Adds only ≤10 nA leakage at 13 V bias, avoiding measurement error in µA-level sensor current loops. | Use Scenario: ESD hardening of UART debug ports and USB-C CC line interfaces in head unit mainboards. IC Role / Device Role: Single-line bidirectional protector replacing discrete dual-diode SOT-23 solutions. Use Value: Reduces PCB area by >60% vs. legacy 3-pin packages while retaining full ±30 kV IEC 61000-4-2 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5Z17V-2/TR | Higher clamping voltage (21.5 V @ 1 A), same X2DFNW2 package, 15.5–18.5 V VBR range | Less suitable for 12 V rail interfaces where tighter clamping margin is required | Select when higher breakdown tolerance is needed and 18.0 V VC is not mandatory |
| SLVU2.8-4 | Lower VRWM (2.8 V), unidirectional configuration, SOD-323 package, 12 kV ESD rating | Only applicable for low-voltage digital I/O, not automotive 12 V systems | Choose only for non-automotive, sub-5 V logic protection with lower cost priority |
Compared with ESD5Z17V-2/TR and SLVU2.8-4, the SZNZ8D16V4MX2WT5G uniquely combines AEC-Q101 qualification, ±30 kV ESD rating, 18.0 V clamping, and X2DFNW2 wettable flank packaging - making it the only drop-in solution for space-constrained, high-reliability 12 V automotive signal protection.
Availability
SZNZ8D16V4MX2WT5G is available at Aetrix Electronics and suitable for automotive ECU design, in-vehicle networking (IVN), and voltage-sensitive sensor interface applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SZNZ8D16V4MX2WT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NZ8D series is part of onsemi's automotive-qualified ESD protection portfolio, engineered specifically for high-reliability transient suppression in 12 V vehicle networks and sensor interfaces.
FAQ
What is the primary function of the SZNZ8D16V4MX2WT5G?
The SZNZ8D16V4MX2WT5G is a bidirectional Zener ESD protection diode designed to clamp transient overvoltages on signal lines. It safeguards voltage-sensitive components such as CAN transceivers and microcontroller I/O pins by limiting peak voltages to 18.0 V during ±30 kV ESD events. Its symmetric structure allows use on AC-coupled or differential signals without polarity concerns, and it operates reliably across −55 °C to +150 °C.
Is the SZNZ8D16V4MX2WT5G qualified for automotive applications?
Yes, the SZNZ8D16V4MX2WT5G is AEC-Q101 qualified and PPAP capable, with the "SZ" prefix indicating compliance with automotive-specific site and process controls. It is explicitly intended for automotive ECU, IVN, and sensor interface applications, and its qualification covers temperature cycling, humidity testing, and mechanical shock per AEC-Q101 standards.
What package does the SZNZ8D16V4MX2WT5G use, and why is it significant?
The SZNZ8D16V4MX2WT5G uses the X2DFNW2 package - a 2-terminal, 1.0 × 0.6 mm no-lead outline with wettable flanks. This enables automated optical inspection (AOI) of solder joints on both side edges, improving manufacturing yield in high-volume automotive SMT lines. Its compact size also allows direct replacement of larger SOT-23 dual-diode configurations without layout changes.
How does the clamping voltage of the SZNZ8D16V4MX2WT5G compare to its breakdown voltage?
The SZNZ8D16V4MX2WT5G has a breakdown voltage (VBR) of 15.9–17.5 V at 1 mA and a clamping voltage (VC) of 18.0 V at 1.0 A (8/20 µs pulse). The ~0.5–2.1 V difference reflects the dynamic impedance rise under high-current transients. This margin ensures safe operation below the absolute maximum ratings of typical 12 V system interface ICs while maintaining tight voltage control during real-world ESD events.
Can the SZNZ8D16V4MX2WT5G replace traditional SOT-23 dual-diode protectors?
Yes, the SZNZ8D16V4MX2WT5G is explicitly designed to replace SOT-23-based dual-diode configurations used for single-line bidirectional protection. Its X2DFNW2 footprint occupies less than half the area, eliminates the need for internal series connection, and provides identical functional behavior - verified in onsemi's application note AND8308/D for signal-line ESD hardening in automotive designs.
SZNZ8D16V4MX2WT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 13V (Max)
- Voltage - Breakdown (Min):
- 15.9V
- Voltage - Clamping (Max) @ Ipp:
- 18V (Typ)
- Current - Peak Pulse (10/1000µs):
- 4.5A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 2-X2DFNW (1x0.6)
SZNZ8D16V4MX2WT5G FAQ
1.How can I place an order for SZNZ8D16V4MX2WT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for SZNZ8D16V4MX2WT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SZNZ8D16V4MX2WT5G reliable?
The price and inventory of SZNZ8D16V4MX2WT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SZNZ8D16V4MX2WT5G is usually 5 days.
3.What payment methods are accepted for SZNZ8D16V4MX2WT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SZNZ8D16V4MX2WT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SZNZ8D16V4MX2WT5G?
SZNZ8D16V4MX2WT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SZNZ8D16V4MX2WT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SZNZ8D16V4MX2WT5G?
For technical support, including SZNZ8D16V4MX2WT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SZNZ8D16V4MX2WT5G requirements.
6.How does Aetrix verify that SZNZ8D16V4MX2WT5G is sourced from the original manufacturer or authorized distributors?
All SZNZ8D16V4MX2WT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SZNZ8D16V4MX2WT5G meets industry standards.
7.What is the process for return or replacement of SZNZ8D16V4MX2WT5G?
All SZNZ8D16V4MX2WT5G units undergo pre-shipment inspection (PSI). If there is an issue with SZNZ8D16V4MX2WT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SZNZ8D16V4MX2WT5G part is unused and in its original packaging.
Return procedure for SZNZ8D16V4MX2WT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SZNZ8D16V4MX2WT5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
