onsemi SZPACDN042Y3R

Overview

SZPACDN042Y3R from onsemi is a 3-pin ESD protection diode array designed for low-capacitance, high-reliability transient suppression on signal lines. It delivers ±20 kV IEC 61000-4-2 contact ESD protection, 5.5 V reverse stand-off voltage, 30 pF capacitance at 2.5 V/1 MHz, and clamps to ≤6.8 V (positive) and ≥−1.2 V (negative) at 10 mA, targeting USB 2.0 data line protection.

For engineers reviewing the SZPACDN042Y3R datasheet, pinout, applications, or equivalent options, key selection criteria include its SOT-23-3 package footprint, dual-cathode configuration referenced to GND, low-leakage performance (<100 nA at 5 V), and compliance with MIL-STD-883 HBM (>±30 kV).

Technical Context

The SZPACDN042Y3R implements a dual-channel unidirectional ESD protection architecture with both cathodes tied to protected signal lines and a shared anode connected to system ground. Its internal structure uses silicon avalanche diodes optimized for fast response (<1 ns) to ESD transients while maintaining low dynamic resistance (1.0 Ω forward, 1.4 Ω reverse) under surge conditions.

This device operates within −40 °C to +85 °C and supports stable clamping across its full temperature range, with leakage current tightly bounded at ≤100 nA at 5 V DC. Its 30 pF capacitance enables use in high-speed interfaces up to 480 Mbps without signal integrity degradation.

Key Specifications

Pinout & Package

SZPACDN042Y3R is housed in a Pb-free, RoHS-compliant SOT-23-3 package (Case 318), measuring 2.90 × 1.30 × 1.00 mm with 1.90 mm lead pitch. The package supports reflow soldering per J-STD-020 and is rated for 0.225 W power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD2E001DRSR and ESD5Z3.3T5G, SZPACDN042Y3R uniquely combines dual-line protection, 5.5-V stand-off, and 30-pF capacitance in a standard SOT-23-3 footprint-making it optimal for compact 5-V differential interface hardening without layout or BOM complexity.

Availability

SZPACDN042Y3R is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial serial port hardening, and consumer docking port ESD mitigation requiring stable component supply and long-term manufacturability.

Supply support for SZPACDN042Y3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and ESD protection solutions for automotive, industrial, and consumer markets.

SZPACDN042Y3R belongs to the PACDN042 family of low-capacitance ESD arrays engineered specifically for high-speed data line protection in space-constrained applications such as portable electronics and industrial connectivity modules.

FAQ

What is the primary function of the SZPACDN042Y3R?

The SZPACDN042Y3R is a dual-channel unidirectional ESD protection diode array that safeguards two signal lines-such as USB D+ and D−-against electrostatic discharge events. It clamps transient voltages to safe levels while maintaining low capacitance (30 pF) and leakage (<100 nA), ensuring signal integrity and compatibility with 5 V logic systems. Its design centers on robust IEC 61000-4-2 Level 4 immunity (±20 kV contact discharge).

Which package type does the SZPACDN042Y3R use?

SZPACDN042Y3R uses the SOT-23-3 surface-mount package (Case 318), measuring 2.90 × 1.30 × 1.00 mm with 1.90 mm lead pitch. This standardized footprint supports automated pick-and-place assembly and reflow soldering per J-STD-020. The device marking "Y3R" indicates Pb-free packaging and corresponds to the SOT-23-3 variant per onsemi's ordering information table.

How does the SZPACDN042Y3R achieve ESD protection without affecting signal performance?

SZPACDN042Y3R achieves this balance through a silicon avalanche diode structure with precisely controlled breakdown characteristics: 5.5 V reverse stand-off prevents conduction during normal operation, while 30 pF capacitance minimizes high-frequency loading on data lines. Its clamping voltages (+6.8 V / −1.2 V at 10 mA) limit overshoot to levels tolerated by 5 V-tolerant receivers, and sub-100 nA leakage avoids degrading high-impedance nodes-all verified across −40 °C to +85 °C.

Can the SZPACDN042Y3R protect both positive and negative ESD transients?

Yes. The SZPACDN042Y3R provides bidirectional ESD protection via its dual-cathode architecture: each cathode connects to a protected signal line, and the shared anode (Pin 2) ties to ground. During a positive transient, current flows from signal → cathode → anode → GND; during a negative transient, the internal diode conducts in reverse breakdown, clamping to −1.2 V. This enables full ±20 kV IEC 61000-4-2 contact discharge immunity on both lines.

Is the SZPACDN042Y3R compliant with environmental regulations?

Yes. SZPACDN042Y3R is Pb-free and RoHS-compliant per onsemi's documentation, meeting Directive 2011/65/EU Annex II maximum concentration values. Its SOT-23-3 package uses lead-free terminations and conforms to JEDEC standards for moisture sensitivity level (MSL) and reflow profile compatibility. Full compliance documentation-including substance declarations-is available through onsemi's official product page and material declarations portal.