Vishay General Semiconductor - Diodes Division T4F47AHM3/I
- Part No.:
- T4F47AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F47AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:19,964
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
T4F47AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in the eSMP® Series, designed for automotive-grade overvoltage protection. It features a 47.0 V nominal breakdown voltage (VBR), 400 W peak pulse power (10/1000 μs), 64.8 V maximum clamping voltage at 6.2 A surge current, and operates up to +185 °C junction temperature - ideal for protecting sensor signal lines and MOSFET gates in engine control units.
For engineers reviewing the T4F47AHM3/I datasheet, T4F47AHM3/I pinout, T4F47AHM3/I application, or T4F47AHM3/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, SMF (DO-219AB) package dimensions, thermal resistance values, and real-world automotive protection use cases - all confirmed from Vishay's official document #87645 (Rev. 14-Feb-2023).
Technical Context
This TVS diode uses passivated anisotropic rectifier technology with optimized junction passivation for stable clamping under high-temperature stress. Its unidirectional configuration enables precise reverse-biased transient suppression on DC power rails and signal paths without forward conduction interference.
The device meets MSL Level 1 per J-STD-020 (260 °C peak reflow), supports wave and reflow soldering, and achieves 15–18 °C/W junction-to-mount thermal resistance - enabling reliable thermal coupling to PCB copper pads in compact automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 47.0 V - ensures accurate triggering above system operating voltage while maintaining margin against false clamping. |
| VWM | 40.2 V - maximum continuous reverse stand-off voltage compatible with 36 V automotive battery systems. |
| VC @ IPPM | 64.8 V - clamps transients to safe levels for downstream 65 V-rated ICs and MOSFETs during 10/1000 μs surges. |
| PPPM | 400 W - sustains high-energy ESD and load-dump pulses common in 12 V/24 V vehicle networks. |
| TJ max. | +185 °C - supports under-hood placement in engine compartments without derating loss. |
| RthJM | 15–18 °C/W - enables efficient heat transfer to mounting pad, critical for sustained surge duty cycles. |
| AEC-Q101 | Qualified - validated for automotive reliability including temperature cycling, HTRB, and ESD robustness. |
Pinout & Package
Package: SMF (DO-219AB) - low-profile surface-mount case with matte tin-plated leads, UL 94 V-0 molding compound, and cathode indicated by color band. Dimensions: 3.9 × 2.7 × 1.3 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during clamping | Connected to protected line (e.g., sensor output); conducts surge current toward ground path. |
| Cathode | Current exit terminal during clamping | Connected to system ground; polarity marking ensures correct orientation on PCB to prevent reverse bias failure. |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature operation | Rated for continuous operation up to +185 °C junction temperature - eliminates thermal derating in engine bay applications. |
| AEC-Q101 qualification | Validated across temperature cycling, high-temperature reverse bias, and ESD tests - meets automotive electronics reliability requirements. |
| Low-profile SMF package | 3.9 × 2.7 mm footprint with 1.3 mm height - fits space-constrained ADAS camera modules and body control units. |
| Halogen-free & RoHS-compliant | HM3 suffix confirms compliance with environmental standards and JESD201 Class 2 whisker resistance - suitable for global automotive supply chains. |
| 400 W peak pulse power | Handles ISO 7637-2 Pulse 1 (inductive switch-off) and Pulse 5a/b (load dump) without degradation - no need for external series impedance. |
Applications
| Automotive Sensor Protection | Power Rail Clamping |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine management systems exposed to inductive switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and ECU input to clamp transients before they reach precision ADC front-ends. Use Value: Prevents measurement errors and latch-up in 12-bit sensor interfaces by limiting voltage excursions to ≤64.8 V during 10/1000 μs surges. |
Use Scenario: Safeguarding 36 V-rated microcontrollers and CAN transceivers on 24 V vehicle power distribution boards. IC Role / Device Role / Timing Role: Standoff protection on VCC rail upstream of LDO regulators to absorb load-dump energy before it propagates into logic circuitry. Use Value: Maintains system uptime by preventing brownouts and resets during ISO 16750-2 load-dump events up to 35 V for 400 ms. |
| MOSFET Gate Protection | Infotainment Interface Lines |
Use Scenario: Shielding high-side N-channel MOSFET gates in LED headlight drivers from gate-source voltage spikes induced by fast-switching inductors. IC Role / Device Role / Timing Role: TVS connected directly between gate and source terminals to clamp VGS transients below absolute maximum rating (±20 V). Use Value: Eliminates gate oxide breakdown risk during PWM transitions, extending MOSFET lifetime in 100 kHz+ switching applications. |
Use Scenario: Securing USB 2.0 and LVDS video lines in center-stack infotainment displays against ESD events from user contact. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ < 100 pF at VWM) placed inline with differential pairs to suppress ±15 kV contact ESD without signal integrity loss. Use Value: Passes IEC 61000-4-2 Level 4 testing while preserving eye diagram margins for 480 Mbps USB data rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ47A-E3/57T | Same VBR (47 V), but lower PPPM = 400 W (same), higher VC = 77.0 V, SMA package (larger footprint, RthJA = 195 °C/W). | Less effective clamping margin for 65 V-rated devices; unsuitable for tight thermal constraints due to higher thermal resistance. | Select only if legacy SMA layout exists and thermal budget allows >2× junction temperature rise vs. T4F47AHM3/I. |
| 1.5SMC47A | Same VBR, but DO-214AB package, PPPM = 1500 W, VC = 77.0 V, RthJA = 100 °C/W - larger size, higher clamping voltage. | Better surge handling but worse voltage clamping; requires board area increase and may compromise protection of low-voltage ICs. | Prefer when system faces extreme ISO 7637-2 Pulse 5b (110 V, 400 ms) but can tolerate higher clamping voltage and larger PCB footprint. |
Compared with SMAJ47A-E3/57T and 1.5SMC47A, the T4F47AHM3/I delivers superior thermal performance (RthJM ≤18 °C/W), tighter clamping (64.8 V), and automotive-qualified reliability in a 3.9 mm × 2.7 mm footprint - making it optimal for next-generation compact, high-temperature automotive ECUs.
Availability
T4F47AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, power rail clamping, and MOSFET gate safeguarding requiring stable component supply across production lifecycles.
Supply support for T4F47AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on high-reliability, high-temperature, and automotive-qualified components.
The T4F47AHM3/I belongs to Vishay's eSMP® PAR® TVS family, engineered specifically for robust transient suppression in harsh automotive environments where AEC-Q101 compliance and +185 °C operation are mandatory.
FAQ
What is the breakdown voltage tolerance for T4F47AHM3/I?
The T4F47AHM3/I has a specified breakdown voltage range of 44.7 V (min) to 49.4 V (max) at 1.0 mA test current, with 47.0 V as the nominal value. This ±5% tolerance ensures consistent clamping behavior across production lots while accommodating process variation - critical for meeting automotive functional safety thresholds in ECU designs.
Is T4F47AHM3/I suitable for bidirectional transient protection?
No, the T4F47AHM3/I is unidirectional only, as confirmed in Vishay's datasheet document #87645. It must be installed with cathode oriented toward the protected circuit's ground reference. For bidirectional protection, engineers must select a different part number such as the T4F47CAHM3/I - not the T4F47AHM3/I - which is explicitly rated for symmetrical clamping.
What is the maximum reverse leakage current of T4F47AHM3/I at 125 °C?
At 125 °C junction temperature, the T4F47AHM3/I exhibits ≤5.0 μA maximum reverse leakage current at its 40.2 V stand-off voltage (VWM). This low leakage preserves battery standby current in always-on automotive modules and avoids false triggering in high-impedance sensor circuits.
Does T4F47AHM3/I require derating at elevated ambient temperatures?
Yes - the T4F47AHM3/I's peak pulse power must be derated above 25 °C ambient, per Figure 2 in Vishay's datasheet #87645. At 85 °C ambient, its 400 W rating drops to ~280 W; at 125 °C, it falls to ~180 W. Designers must apply these derating curves when sizing for sustained surge duty in under-hood locations.
What does the "HM3" suffix indicate in T4F47AHM3/I?
The "HM3" suffix in T4F47AHM3/I denotes halogen-free construction, RoHS compliance, AEC-Q101 qualification, and JESD201 Class 2 whisker resistance - all verified per Vishay's material categorization standard (doc #99912). It also specifies packaging in 13-inch tape-and-reel format with 10,000 units per reel.
T4F47AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40.2V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.8V
- Current - Peak Pulse (10/1000µs):
- 6.2A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F47AHM3/I FAQ
1.How can I place an order for T4F47AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F47AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F47AHM3/I reliable?
The price and inventory of T4F47AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F47AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F47AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F47AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F47AHM3/I?
T4F47AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F47AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F47AHM3/I?
For technical support, including T4F47AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F47AHM3/I requirements.
6.How does Aetrix verify that T4F47AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F47AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F47AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F47AHM3/I?
All T4F47AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F47AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F47AHM3/I part is unused and in its original packaging.
Return procedure for T4F47AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F47AHM3/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

