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Vishay General Semiconductor - Diodes Division T6N43AHM3/I
- Part No.:
- T6N43AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- 2-VDFN
- Datasheet:
-
T6N43AHM3/I.pdf
- Description:
- LOW-PROFILE VERSION 600 W UNI-DI
- Quantity:
- Payment:
- Shipping:
Inventory:14,000
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Product details
Overview
T6N43AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor in DFN3820A package, rated for 43.0 V nominal breakdown voltage (VBR), 36.8 V stand-off voltage (VWM), and 600 W peak pulse power (10/1000 μs). It delivers 10.1 A peak pulse current (IPPM) and clamps to 59.3 V at IPPM, supporting automotive-grade protection of sensor signal lines and MOSFET gates.
For engineers reviewing the T6N43AHM3/I datasheet, T6N43AHM3/I pinout, T6N43AHM3/I application, or T6N43AHM3/I equivalent, this page provides verified electrical parameters, AEC-Q101 qualification status, thermal resistance values (RθJA = 175 °C/W max), junction temperature capability up to +185 °C, and side-wettable flanks for AOI-compatible solder joint inspection.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for high-reliability operation under thermal stress. Its unidirectional configuration enables precise reverse-biased clamping on DC-biased signal or power rails without forward conduction interference.
The DFN3820A package integrates low-profile geometry (0.88 mm typical height) and matte tin-plated terminals compliant with J-STD-002 and JESD 22-B102. It achieves MSL Level 1 rating and passes JESD 201 Class 2 whisker testing, confirming suitability for automated SMT assembly and long-term field reliability in automotive ECUs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 40.9 / 43.0 / 45.2 V - defines minimum voltage at which clamping initiates reliably at 1 mA test current |
| VWM | 36.8 V - maximum continuous reverse operating voltage before leakage exceeds 1 μA |
| IPPM (10/1000 μs) | 10.1 A - peak surge current it safely diverts without failure under standardized lightning-induction waveform |
| VC @ IPPM | 59.3 V - clamped voltage during full-rated surge, determining protected circuit's maximum transient exposure |
| TJ max | +185 °C - enables operation in engine bay or powertrain modules where ambient temperatures exceed 125 °C |
| RθJA max | 175 °C/W - thermal resistance from junction to ambient on standard FR4 PCB, critical for power derating above 25 °C |
| ESD immunity | ±30 kV contact/air per IEC 61000-4-2 - protects against human-body-model ESD events in assembly and end-use |
Pinout & Package
Package: DFN3820A - leadless, 2-terminal surface-mount package with side-wettable flanks (0.078 × 0.086 in / 1.98 × 2.18 mm footprint, 0.031 in / 0.79 mm height), polarity marked by cathode band; anode connected to exposed thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (thermal pad) | Common reference and heat dissipation node | Electrically tied to PCB ground plane; primary thermal path to board; must be soldered for RθJM = 6.5 °C/W performance |
| Cathode (top-side terminal) | Transient voltage sensing and clamping node | Connected to protected line (e.g., CAN_H, LIN, sensor output); conducts only during overvoltage events above VWM |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTGB, HTRB, and temperature cycling |
| Side-wettable flanks | Enables automated optical inspection (AOI) of solder fillet quality without X-ray, reducing post-SMT defect escape |
| Junction passivation | Prevents moisture-induced degradation and leakage drift under 85 °C/85% RH bias conditions |
| Halogen-free & RoHS-compliant | Meets automotive material compliance standards (J-STD-609 Class 2) and EU environmental directives |
| MSL Level 1 | Zero floor-life limitation - can be stored indefinitely at ≤30 °C/60% RH without baking prior to reflow |
Applications
| Automotive Sensor Protection | CAN Bus Line Protection |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine control units exposed to load-dump transients. IC Role / Device Role / Timing Role: Unidirectional clamping device placed between sensor output and microcontroller ADC input. Use Value: Limits transient voltage to ≤59.3 V during 100 V/50 ms load dump, preventing ADC saturation and input-stage damage while maintaining <1 μA leakage at 36.8 V. |
Use Scenario: Safeguarding CAN_H and CAN_L differential pair against ESD and inductive switching noise in body control modules. IC Role / Device Role / Timing Role: Single-line TVS on each bus line referenced to chassis ground, leveraging low capacitance (<50 pF) to preserve signal integrity. Use Value: Clamps 30 kV ESD strikes per IEC 61000-4-2 without signal distortion, with VC margin >2× common-mode voltage swing (±40 V). |
| Power MOSFET Gate Protection | Infotainment System USB Interface |
Use Scenario: Shielding high-side N-channel MOSFET gate drivers from Miller-induced voltage spikes during fast switching in 48 V DC-DC converters. IC Role / Device Role / Timing Role: Low-capacitance TVS placed between gate and source, activated only during overvoltage events exceeding VGS(max). Use Value: Responds within nanoseconds to clamp gate voltage to 59.3 V, staying well below 60 V absolute maximum rating while adding <0.3 pF parasitic capacitance. |
Use Scenario: Guarding USB 2.0 data lines (D+, D−) in head unit applications against hot-plug ESD and cable discharge events. IC Role / Device Role / Timing Role: Dual-channel layout using two T6N43AHM3/I devices (one per line), grounded via thermal pad to minimize loop inductance. Use Value: Maintains <1.5 pF typical junction capacitance at zero bias, ensuring <0.1 dB insertion loss at 480 MHz and full USB 2.0 eye diagram compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ43A | DO-214AC package (SMA), 600 W rating, VBR = 47.8–53.1 V, RθJA = 50 °C/W higher, no side-wettable flanks | Requires manual AOI or X-ray for solder joint verification; less suitable for high-volume automotive SMT lines | Select when legacy SMA footprint compatibility is required and thermal budget allows higher junction rise |
| SMCJ43A | DO-214AB package (SMC), 1500 W rating, VBR = 47.8–53.1 V, 3× larger footprint, RθJA ≈ 25 °C/W lower | Better thermal handling but incompatible with space-constrained ADAS modules; not AEC-Q101 qualified | Choose for industrial power supply inputs where surge energy exceeds 600 W and board area permits larger case |
Compared with SMAJ43A and SMCJ43A, the T6N43AHM3/I offers superior manufacturability in automotive SMT lines due to its AOI-ready DFN3820A package, tighter VBR tolerance (±5 %), and guaranteed AEC-Q101 qualification-without sacrificing clamping performance or thermal robustness up to +185 °C.
Availability
T6N43AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, CAN bus interface hardening, and power MOSFET gate safeguarding requiring stable component supply across multi-year vehicle production cycles.
Supply support for T6N43AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors with emphasis on reliability, precision, and application-specific optimization for automotive, industrial, and computing markets.
The T6N43AHM3/I belongs to Vishay's PAR® TVS family, engineered specifically for high-temperature, high-reliability transient suppression in automotive electronics where AEC-Q101 compliance and junction stability up to +185 °C are mandatory.
FAQ
What is the exact breakdown voltage range for T6N43AHM3/I?
The T6N43AHM3/I has a guaranteed breakdown voltage (VBR) range of 40.9 V to 45.2 V at 1.0 mA test current, with 43.0 V as the nominal value. This ±5 % tolerance ensures predictable clamping onset across temperature and production lots, critical for protecting 36 V-rated circuits without premature conduction.
Is T6N43AHM3/I qualified for automotive use?
Yes, the T6N43AHM3/I carries the HM3 suffix indicating halogen-free, RoHS-compliant, and AEC-Q101 qualification. It has passed stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling, making it approved for under-hood and safety-critical automotive applications.
What does the "HM3" suffix mean in T6N43AHM3/I?
In T6N43AHM3/I, "HM3" denotes Vishay's material/environment category: halogen-free molding compound, lead-free matte tin terminations, RoHS compliance, and AEC-Q101 qualification. The "I" indicates 13-inch tape-and-reel packaging with 14,000 units per reel, optimized for high-speed pick-and-place equipment.
Can T6N43AHM3/I replace SMAJ43A in existing designs?
No direct replacement: T6N43AHM3/I uses DFN3820A (2.0 × 2.2 mm), while SMAJ43A uses DO-214AC (4.5 × 2.7 mm). PCB layout change is required. However, both share identical 43 V nominal clamping function and 600 W surge rating-making T6N43AHM3/I a functional upgrade for space-constrained, AOI-driven automotive designs.
What is the thermal resistance from junction to mount (RθJM) for T6N43AHM3/I?
The T6N43AHM3/I has a maximum RθJM of 6.5 °C/W when mounted on a 2 oz. copper thermal pad per JEDEC 51-14 TDIM method. This low value confirms efficient heat transfer from the die to the PCB, enabling sustained operation at elevated ambient temperatures up to +125 °C with appropriate copper area design.
T6N43AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- 2-VDFN
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36.8V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.3V
- Current - Peak Pulse (10/1000µs):
- 10.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN3820A
T6N43AHM3/I FAQ
1.How can I place an order for T6N43AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T6N43AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T6N43AHM3/I reliable?
The price and inventory of T6N43AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T6N43AHM3/I is usually 5 days.
3.What payment methods are accepted for T6N43AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T6N43AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T6N43AHM3/I?
T6N43AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T6N43AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T6N43AHM3/I?
For technical support, including T6N43AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T6N43AHM3/I requirements.
6.How does Aetrix verify that T6N43AHM3/I is sourced from the original manufacturer or authorized distributors?
All T6N43AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T6N43AHM3/I meets industry standards.
7.What is the process for return or replacement of T6N43AHM3/I?
All T6N43AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T6N43AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T6N43AHM3/I part is unused and in its original packaging.
Return procedure for T6N43AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T6N43AHM3/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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