Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division TA6F39AHM3_A/H

Part No.:
TA6F39AHM3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-221AC, SMA Flat Leads
Datasheet:
AetrixTA6F39AHM3_A/H.pdf
Description:
TVS DIODE 33.3VWM 53.9VC DO221AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,723

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TA6F39AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SlimSMA (DO-221AC) package, with 39 V breakdown voltage (VBR = 37.1–41.0 V at IT = 1.0 mA), 33.3 V stand-off voltage (VWM), and 600 W peak pulse power (10/1000 µs). It delivers 53.9 V clamping voltage at 11.1 A peak surge current and operates up to TJ = 185 °C - designed for automotive sensor line protection against load dump and ESD.

For engineers reviewing the TA6F39AHM3_A/H datasheet, TA6F39AHM3_A/H pinout, TA6F39AHM3_A/H application, or TA6F39AHM3_A/H equivalent, this device requires attention to unidirectional polarity marking, MSL Level 1 reflow compatibility (260 °C peak), AEC-Q101 qualification, and thermal derating above 25 °C ambient per Fig. 2 and Fig. 5.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low-profile mounting. Its junction passivation enables reliable operation at TJ = 185 °C and supports automated SMT placement on FR4 PCBs with minimum recommended pad layout.

The device exhibits a temperature coefficient of VBR = +0.091 %/°C and achieves 30 kV ESD immunity per IEC 61000-4-2 (contact/air discharge). Thermal resistance is RθJA = 120–150 °C/W (JEDEC 51-2A) and RθJM = 12–15 °C/W (JEDEC 51-14), confirming suitability for thermally constrained automotive modules.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/typ/max)37.1 / 39.0 / 41.0 V at IT = 1.0 mA - defines precise clamping onset threshold under standardized test conditions
VWM33.3 V - maximum continuous reverse working voltage before significant leakage begins
VC @ IPPM53.9 V at 11.1 A - clamped voltage during 10/1000 µs surge, directly limiting downstream IC stress
PPPM600 W (10/1000 µs) - peak transient energy absorption capability without failure
TJ max185 °C - enables use in under-hood automotive environments without thermal derating penalties
ESD Rating30 kV contact & air discharge (IEC 61000-4-2) - protects against human-body-model and system-level ESD events
AEC-Q101Qualified - meets stress-test requirements for automotive-grade reliability including HTGB, H3TRB, and TC

Pinout & Package

Package: SlimSMA (DO-221AC), ultra-low profile (0.95 mm typical height), halogen-free, RoHS-compliant, matte tin-plated terminals, cathode indicated by color band. Meets UL 94 V-0 flammability rating.

Pin/Terminal Circuit Role Design Meaning
AnodeForward conduction terminal (cathode-biased during clamping)Connected to protected signal line or power rail; carries surge current into ground path during overvoltage
CathodeReverse-biased terminal during normal operationMarked with color band; tied to system ground or low-impedance return path to enable fast clamping response

Key Features

Feature Design Value
Unidirectional clamping architectureProtects DC-biased lines (e.g., CAN, LIN, sensor supply) without forward-conduction interference during normal operation
Junction passivation processEnables stable leakage performance (<1 µA at VWM) and long-term reliability at 150 °C junction temperature
MSL Level 1 ratingSupports single-reflow assembly at 260 °C peak without moisture-induced damage or popcorn effect
Low-profile SlimSMA footprintReduces board space and improves mechanical robustness in vibration-prone automotive modules
AEC-Q101 qualificationValidates performance across temperature cycling, high-temperature reverse bias, and accelerated life testing for automotive deployment

Applications

Automotive Sensor Signal Lines Engine Control Unit (ECU) Power Inputs

Use Scenario: Protection of analog output lines from pressure, temperature, and position sensors exposed to load-switching transients and battery dump events.

IC Role / Device Role / Timing Role: TVS diode placed in parallel with sensor output to clamp induced surges before reaching ADC input or signal conditioner.

Use Value: Limits transient voltage to ≤53.9 V, preventing latch-up or permanent damage to 3.3 V/5 V sensor interface ICs while maintaining <1 µA leakage at 33.3 V operating voltage.

Use Scenario: Input-stage surge suppression on 12 V supply rails feeding microcontrollers and driver ICs inside engine control units.

IC Role / Device Role / Timing Role: Primary front-end TVS on main power entry point, absorbing ISO 7637-2 Pulse 1/2a/5a energy before LDO or DC-DC converter.

Use Value: Withstands 600 W (10/1000 µs) pulses and operates reliably up to 185 °C junction temperature, enabling compact placement near hot ECU components.

Infotainment System USB/UART Lines Body Control Module (BCM) LIN Bus

Use Scenario: ESD and fast-transient protection on low-speed serial interfaces connecting head unit to display or audio amplifier.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between data line and ground, leveraging low capacitance (typ. <100 pF) to avoid signal integrity degradation.

Use Value: Delivers 30 kV IEC 61000-4-2 ESD protection without adding measurable jitter or rise-time distortion to 480 Mbps USB 2.0 or 3 Mbps UART signals.

Use Scenario: Transient suppression on LIN bus lines in door modules and lighting controllers subject to inductive switching noise from motors and solenoids.

IC Role / Device Role / Timing Role: Clamping device connected between LIN line and chassis ground, activated only during >33.3 V overvoltage events.

Use Value: Maintains bus functionality during normal 12 V operation (leakage <1 µA), while clamping spikes to 53.9 V to prevent LIN transceiver latch-up or reset.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ36AHigher VBR (36–40 V), same SlimSMA package, lower PPPM = 400 W, no AEC-Q101 qualificationNot suitable for automotive production; limited to industrial or consumer-grade designs where qualification is not mandatedSelect SMAJ36A only if cost sensitivity outweighs automotive compliance and 600 W surge margin is unnecessary
TPSMF36ASame VWM/VBR range, 600 W rating, AEC-Q101 qualified, but larger SMA package (1.6 mm height vs. 0.95 mm)Requires PCB layout revision due to taller profile and different thermal pad geometry; less suitable for space-constrained modulesChoose TPSMF36A only when existing SMA footprint is fixed and SlimSMA rework is impractical

Compared with SMAJ36A and TPSMF36A, TA6F39AHM3_A/H uniquely combines AEC-Q101 qualification, 600 W surge rating, SlimSMA low-profile packaging, and verified 185 °C junction capability - making it optimal for next-generation automotive ECUs where thermal density and qualification rigor are non-negotiable.

Availability

TA6F39AHM3_A/H is available at Aetrix Electronics and suitable for automotive sensor protection, ECU power rail hardening, and infotainment interface safeguarding requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for TA6F39AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, efficiency, and automotive-grade qualification.

The TA6F series belongs to Vishay's PAR® family of high-temperature TVS diodes, engineered specifically for automotive electronics demanding AEC-Q101 compliance, 185 °C operation, and robust transient immunity in compact SMT packages.

FAQ

What is the exact breakdown voltage range for TA6F39AHM3_A/H?

The TA6F39AHM3_A/H has a guaranteed breakdown voltage (VBR) range of 37.1 V to 41.0 V at test current IT = 1.0 mA, with nominal value 39.0 V. This range is confirmed in Table 1 of Vishay Document 89939 and ensures consistent clamping behavior across production lots and temperature extremes.

Is TA6F39AHM3_A/H compatible with lead-free reflow soldering processes?

Yes, TA6F39AHM3_A/H is rated MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 260 °C. Its matte tin-plated terminals meet J-STD-002 and JESD22-B102 solderability standards, and its SlimSMA molding compound is UL 94 V-0 rated - fully compatible with standard lead-free reflow profiles.

Does TA6F39AHM3_A/H have bidirectional or unidirectional polarity?

TA6F39AHM3_A/H is a unidirectional TVS diode, with cathode clearly marked by a color band on the package. It conducts only during reverse-biased overvoltage events and remains highly resistive under forward bias - essential for protecting DC-coupled lines like sensor supplies and LIN bus without interfering with normal signal flow.

What is the maximum clamping voltage of TA6F39AHM3_A/H under surge conditions?

The maximum clamping voltage (VC) of TA6F39AHM3_A/H is 53.9 V at peak pulse current IPPM = 11.1 A (10/1000 µs waveform). This value is measured and guaranteed per Vishay Document 89939, ensuring downstream circuitry sees no more than 53.9 V during worst-case transients.

How does TA6F39AHM3_A/H perform at elevated junction temperatures?

TA6F39AHM3_A/H is characterized for operation up to TJ = 185 °C and features a positive VBR temperature coefficient of +0.091 %/°C. Its leakage current remains below 1 µA at VWM = 33.3 V even at TJ = 150 °C, enabling reliable use in under-hood automotive locations without thermal runaway risk.

TA6F39AHM3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-221AC, SMA Flat Leads
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
33.3V
Voltage - Breakdown (Min):
37.1V
Voltage - Clamping (Max) @ Ipp:
53.9V
Current - Peak Pulse (10/1000µs):
11.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-221AC (SlimSMA)

TA6F39AHM3_A/H FAQ

1.How can I place an order for TA6F39AHM3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for TA6F39AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TA6F39AHM3_A/H reliable?

The price and inventory of TA6F39AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F39AHM3_A/H is usually 5 days.

3.What payment methods are accepted for TA6F39AHM3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F39AHM3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TA6F39AHM3_A/H?

TA6F39AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TA6F39AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TA6F39AHM3_A/H?

For technical support, including TA6F39AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F39AHM3_A/H requirements.

6.How does Aetrix verify that TA6F39AHM3_A/H is sourced from the original manufacturer or authorized distributors?

All TA6F39AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F39AHM3_A/H meets industry standards.

7.What is the process for return or replacement of TA6F39AHM3_A/H?

All TA6F39AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with TA6F39AHM3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TA6F39AHM3_A/H part is unused and in its original packaging.

Return procedure for TA6F39AHM3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TA6F39AHM3_A/H Tags

  • TA6F39AHM3_A/H
  • TA6F39AHM3_A/H PDF
  • TA6F39AHM3_A/H Datasheet
  • TA6F39AHM3_A/H Specifications
  • TA6F39AHM3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division TA6F39AHM3_A/H
  • Buy TA6F39AHM3_A/H
  • TA6F39AHM3_A/H Price
  • TA6F39AHM3_A/H Distributor
  • TA6F39AHM3_A/H Supplier
  • TA6F39AHM3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER