Vishay General Semiconductor - Diodes Division TA6F7.5AHM3_A/H

Overview

TA6F7.5AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) diode in SlimSMA (DO-221AC) package, with 7.5 V nominal breakdown voltage (V_BR), 6.4 V stand-off voltage (V_WM), 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive-grade reliability. It clamps transients up to 11.3 V at 53.1 A peak pulse current and operates up to +185 °C junction temperature.

For engineers reviewing the TA6F7.5AHM3_A/H datasheet, TA6F7.5AHM3_A/H pinout, TA6F7.5AHM3_A/H application, or TA6F7.5AHM3_A/H equivalent, key selection criteria include unidirectional clamping behavior, 30 kV IEC 61000-4-2 ESD rating, MSL Level 1 moisture sensitivity, TJ = 185 °C capability, and compatibility with automated SMT placement on automotive sensor signal lines and MOSFET gate protection circuits.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low-profile mounting. Its unidirectional architecture provides precise reverse-biased clamping during positive-going transients while blocking normal operating voltage up to 6.4 V.

The device delivers 600 W peak pulse power handling under standardized 10/1000 μs waveform conditions, with thermal resistance R_θJA of 120–150 °C/W and R_θJM of 12–15 °C/W, enabling robust surge suppression in space-constrained automotive PCB layouts without heatsinking.

Key Specifications

Pinout & Package

SlimSMA (DO-221AC) surface-mount package with cathode indicated by color band; terminals are matte tin-plated for solderability per J-STD-002 and JESD22-B102, qualified to JESD201 Class 2 whisker test.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMAJ7.5A and TPSMD7.5, TA6F7.5AHM3_A/H uniquely combines AEC-Q101 qualification, 185 °C operation, and 0.95 mm profile-making it optimal for next-generation automotive ECUs where space, temperature, and compliance are co-constrained.

Availability

TA6F7.5AHM3_A/H is available at Aetrix Electronics and suitable for automotive sensor protection, MOSFET gate safeguarding, infotainment interface hardening, and body control module power rail clamping requiring stable component supply across production lifecycles.

Supply support for TA6F7.5AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices engineered for high reliability and performance in harsh environments.

The TA6F series belongs to Vishay's PAR® family of surface-mount TVS diodes, designed specifically to meet stringent automotive transient immunity standards-including ISO 7637-2 and IEC 61000-4-2-while supporting miniaturized, high-temperature ECU architectures.

FAQ

What is the breakdown voltage tolerance of the TA6F7.5AHM3_A/H?

The TA6F7.5AHM3_A/H has a specified breakdown voltage range of 7.13 V (minimum) to 7.88 V (maximum) at 10 mA test current, with 7.50 V as the nominal value. This ±5% tolerance ensures consistent clamping behavior across production lots while allowing design margin for worst-case V_BR drift over temperature and lifetime. The TA6F7.5AHM3_A/H maintains this specification under AEC-Q101 stress conditions.

Is the TA6F7.5AHM3_A/H suitable for bidirectional transient protection?

No, the TA6F7.5AHM3_A/H is a unidirectional TVS diode and must be used only in circuits with defined DC polarity. It conducts during positive transients on the cathode side relative to anode, but does not protect against negative-going surges on the same line. For bidirectional protection, a separate device such as the TA6F7.5CA variant-or back-to-back configuration-must be selected. The TA6F7.5AHM3_A/H datasheet explicitly states "Unidirectional" in its PRIMARY CHARACTERISTICS table.

Does the TA6F7.5AHM3_A/H require a heatsink for 600 W surge handling?

No, the TA6F7.5AHM3_A/H achieves its 600 W peak pulse power rating (10/1000 μs) without external heatsinking when mounted on the minimum recommended pad layout per JEDEC 51-2A. Its R_θJA of 120–150 °C/W and R_θJM of 12–15 °C/W are characterized for standard FR-4 boards. Continuous power dissipation remains limited to 1.1 W at 25 °C ambient, so thermal design focuses on transient energy absorption-not steady-state cooling. The TA6F7.5AHM3_A/H leverages silicon thermal mass rather than heatsinks.

What does the "HM3_A/H" suffix indicate in TA6F7.5AHM3_A/H?

The "HM3" denotes the SlimSMA (DO-221AC) package with halogen-free, RoHS-compliant molding compound and AEC-Q101 qualification; "A" is the revision code; "H" specifies the 7-inch plastic tape-and-reel packaging format with 3500 units per reel. This ordering code aligns with Vishay's documented format in the datasheet's ORDERING INFORMATION section. The TA6F7.5AHM3_A/H is not compatible with "I" (13-inch reel) or other suffix variants without requalification.

How does the TA6F7.5AHM3_A/H perform under high-temperature operating conditions?

The TA6F7.5AHM3_A/H is rated for continuous operation up to +185 °C junction temperature and exhibits predictable V_BR drift via a temperature coefficient of +0.052 %/°C. At 150 °C, its maximum reverse leakage at V_WM remains ≤500 μA-well within safe margins for automotive sensor interfaces. Derating curves in the datasheet confirm usable surge capability down to 50% of rated PPPM at 125 °C ambient, making the TA6F7.5AHM3_A/H suitable for under-hood deployment without thermal throttling.