Taiwan Semiconductor Corporation TESDH5V0B03P1Q0 M3G

Overview

TESDH5V0B03P1Q0 from Taiwan Semiconductor is a bidirectional ESD protection diode in DFN0603-2L package, rated for ±20kV IEC61000-4-2 (air/contact), 4.5A IEC61000-4-5 (8/20μs), 5V reverse working voltage, and 0.20–0.35pF junction capacitance - deployed on USB3.1, DisplayPort, and SATA interfaces to clamp transients before downstream ICs.

For engineers reviewing the TESDH5V0B03P1Q0 datasheet, TESDH5V0B03P1Q0 pinout, TESDH5V0B03P1Q0 application, or TESDH5V0B03P1Q0 equivalent, key selection criteria include clamping voltage (≤22V at 4.5A), ultra-low capacitance (<0.35pF), bidirectional operation, DFN0603-2L footprint compatibility, and ±30kV system-level ESD robustness per design implementation notes.

Technical Context

This device implements a proprietary bidirectional clamping cell architecture optimized for low-capacitance, high-speed data line protection. It operates with zero bias and delivers symmetrical clamping behavior across both polarities without external circuitry.

Its dynamic resistance of 1.33Ω (4A–16A TLP) enables rapid voltage suppression during sub-100ns transients, while the 0.20–0.35pF capacitance at 0V ensures minimal signal distortion on 5Gbps+ interfaces like USB3.1 Gen1 and DisplayPort 1.2.

Key Specifications

Pinout & Package

Package: DFN0603-2L (0.6 mm × 0.3 mm, 0.2 mm height), moisture sensitivity level 1 per J-STD-020, RoHS and halogen-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD5Z5.0T1G and TPD2E001DRYR, the TESDH5V0B03P1Q0 offers the lowest capacitance (0.20–0.35pF) in a true single-line bidirectional 2-pin package, making it uniquely suited for next-gen 5Gbps+ interfaces where signal fidelity and layout density are critical.

Availability

TESDH5V0B03P1Q0 is available at Aetrix Electronics and suitable for USB3.1 interface protection, DisplayPort lane safeguarding, and SATA/eSATA port hardening requiring stable component supply and long-term production continuity.

Supply support for TESDH5V0B03P1Q0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The TESDH series targets high-speed interface protection with emphasis on ultra-low capacitance, bidirectional symmetry, and compact DFN packaging - engineered specifically for USB, DisplayPort, and PCI Express ecosystem compliance.

FAQ

What is the maximum clamping voltage of TESDH5V0B03P1Q0 under IEC61000-4-5 surge conditions?

The TESDH5V0B03P1Q0 exhibits a maximum clamping voltage of 22 V when subjected to a 4.5 A, 8/20 μs peak pulse current per IEC61000-4-5. This value is measured across the device terminals and guarantees that protected downstream circuitry remains below destructive voltage thresholds during lightning-induced transients. The TESDH5V0B03P1Q0 maintains this performance consistently across its specified junction temperature range of −55°C to +125°C.

Does TESDH5V0B03P1Q0 support bidirectional ESD protection without external biasing?

Yes, the TESDH5V0B03P1Q0 is inherently bidirectional and requires no external bias or polarity configuration. Its internal clamping cell structure provides symmetrical breakdown and clamping behavior for both positive and negative transients, enabling direct placement across any single-ended or differential line - such as USB3.1 D+ or DisplayPort TX+ - without regard to signal DC offset or directionality. This feature is confirmed in the device's circuit diagram and absolute maximum ratings table.

What is the junction capacitance of TESDH5V0B03P1Q0 at 0V reverse bias and 1 MHz?

The junction capacitance of TESDH5V0B03P1Q0 is specified as 0.20 pF (typical) to 0.35 pF (maximum) at 1 MHz and 0 V reverse bias. This ultra-low value is measured under standardized conditions and directly impacts high-speed signal integrity - for example, limiting insertion loss to <0.5% at 2.5 GHz. The TESDH5V0B03P1Q0's capacitance remains stable across operating voltage, supporting reliable performance in USB3.1 and DisplayPort applications.

Can TESDH5V0B03P1Q0 be used for 3.3V logic line protection?

Yes, the TESDH5V0B03P1Q0 is suitable for 3.3V logic line protection despite its 5 V reverse working voltage rating. Its 6–9.5 V reverse breakdown voltage ensures safe margin above 3.3V rail levels, while its ≤22 V clamping voltage at 4.5A prevents overvoltage damage to 3.3V-tolerant receivers. Application notes confirm usage on 3.3V control lines in notebooks and embedded systems, and the TESDH5V0B03P1Q0's low leakage (<50 nA at 5V) avoids loading effects on weak-drive circuits.

What is the moisture sensitivity level (MSL) and reflow profile compliance for TESDH5V0B03P1Q0?

The TESDH5V0B03P1Q0 has a moisture sensitivity level (MSL) of Level 1 per J-STD-020, meaning it is not humidity-sensitive and may be stored indefinitely at ambient conditions without baking prior to reflow. It is qualified for standard lead-free reflow profiles with peak temperatures up to 260°C, compatible with IPC/JEDEC J-STD-020D.1 specifications. This MSL rating simplifies manufacturing logistics and eliminates pre-bake steps in SMT assembly of the TESDH5V0B03P1Q0.