Taiwan Semiconductor Corporation TLD6S17AH

Overview

TLD6S17AH from Taiwan Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-218AB package, rated for 17.0 V working stand-off voltage, 18.9–20.9 V breakdown voltage at 5.0 mA, and 4600 W peak pulse power (10/1000 µs). It delivers 27.6 V clamping voltage at 167 A peak current and operates from −55 °C to +175 °C, designed specifically for automotive load dump surge protection in 12 V/24 V systems.

For engineers reviewing the TLD6S17AH datasheet, TLD6S17AH pinout, TLD6S17AH application, or TLD6S17AH equivalent, key selection criteria include its AEC-Q101 qualification, ISO 7637-2/ISO 16750-2 compliance, 0.85 °C/W junction-to-case thermal resistance, unidirectional polarity, and DO-218AB surface-mount mechanical form factor.

Technical Context

The TLD6S17AH employs junction passivation optimized design technology to sustain 175 °C junction temperature under high-energy transients. Its single-die DO-218AB construction enables robust 4600 W (10/1000 µs) and 3600 W (10/10000 µs) non-repetitive surge handling with ≤10 µA blocking leakage at VWM and 150 µA at TJ = 175 °C.

It meets IEC 61000-4-2 Level 4 and ISO 10605 Level L4 ESD immunity, and complies with ISO 7637-2 (load dump) and ISO 16750-2 (electrical disturbances) test conditions-critical for automotive power supply rail protection where fast clamping and low thermal impedance are mandatory.

Key Specifications

Pinout & Package

Package: DO-218AB - Surface-mount, molded case with matte tin-plated leads, UL 94V-0 rated, JESD 201 Class 2 whisker compliant, 2.682 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMAJ17A and SMCJ17A, the TLD6S17AH uniquely supports 4600 W surge handling and AEC-Q101 qualification in DO-218AB, enabling direct placement on high-current automotive battery feeds without external heatsinking.

Availability

TLD6S17AH is available at Aetrix Electronics and suitable for automotive ECU power input protection, body control module (BCM) battery rail hardening, and ADAS camera module surge suppression requiring stable component supply across extended production lifecycles.

Supply support for TLD6S17AH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Company (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, TVS diodes, and rectifiers for automotive and industrial markets.

The TLD6SxxAH series was developed to address high-energy load dump protection in modern 12 V/24 V automotive architectures, combining AEC-Q101 reliability with DO-218AB's superior thermal and surge performance.

FAQ

What is the clamping voltage of the TLD6S17AH at its rated peak pulse current?

The TLD6S17AH has a maximum clamping voltage (VC) of 27.6 V when subjected to its rated peak pulse current of 167 A using a 10/1000 µs waveform. This value is measured per IEC 61000-4-5 and ensures downstream components see no more than 27.6 V during worst-case surge events. The TLD6S17AH maintains this clamping performance across its full operating temperature range from −55 °C to +175 °C.

Is the TLD6S17AH AEC-Q101 qualified and what does that mean for automotive use?

Yes, the TLD6S17AH is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature operating life, temperature cycling, and mechanical shock-specifically validated for discrete semiconductors in automotive applications. This qualification confirms the TLD6S17AH meets reliability requirements for under-hood deployment, such as in engine control units or electric power steering systems where ambient temperatures exceed 125 °C.

What is the thermal resistance and how does it affect PCB layout for the TLD6S17AH?

The TLD6S17AH has a junction-to-case thermal resistance (RθJC) of 0.85 °C/W, measured with an ideal heatsink. In practice, this means PCB copper area under the DO-218AB case must be sufficient to dissipate heat during repetitive surges. For optimal thermal performance, designers should use ≥200 mm² of 2 oz copper connected to the cathode pad, minimizing thermal impedance between the device and system ground plane to prevent junction overheating during sustained 3600 W (10/10000 µs) events.

Does the TLD6S17AH meet ISO 7637-2 and ISO 16750-2 standards, and which test pulses does it cover?

Yes, the TLD6S17AH meets both ISO 7637-2 and ISO 16750-2 surge immunity requirements. Specifically, it is validated for ISO 7637-2 Pulse 5a (slow decay, 35 V) and Pulse 5b (fast decay, 50 V), as well as ISO 16750-2 Load Dump Test Condition IV. These certifications are confirmed by Taiwan Semiconductor's characterization data showing stable clamping behavior and no parametric shift after repeated application of standardized automotive transients.

What is the polarity configuration and marking convention for the TLD6S17AH?

The TLD6S17AH is a unidirectional TVS diode with cathode marked by a band on the DO-218AB package body. The marking code "TLD6S17A" appears adjacent to the cathode band, and date/factory codes follow per standard TSC conventions. Correct orientation is critical: cathode connects to the protected line (e.g., battery rail), anode to ground-reversal would render the device non-functional for surge suppression.