Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Taiwan Semiconductor Corporation TLD8S10AH

Part No.:
TLD8S10AH
Manufacturer:
Taiwan Semiconductor Corporation
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixTLD8S10AH.pdf
Description:
TVS DIODE 10VWM 17VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,475

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TLD8S10AH from Taiwan Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-218AB package, rated for 10 V working stand-off voltage (VWM), 11.1–12.3 V breakdown voltage (VBR), and 6600 W peak pulse power (10/1000 µs). It delivers automotive-grade surge protection against load dump and ISO 7637-2 transients in 12 V vehicle power systems.

For engineers reviewing the TLD8S10AH datasheet, TLD8S10AH pinout, TLD8S10AH application, or TLD8S10AH equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction capability, 17.0 V clamping voltage at 388 A peak current, and compliance with ISO 10605 Level L4 ESD immunity - all critical for under-hood automotive electronics design.

Technical Context

The TLD8S10AH is engineered as a high-energy unidirectional TVS diode optimized for automotive load dump suppression. Its junction passivation design enables stable operation up to TJ = 175 °C, and it meets ISO 7637-2 Pulse 5a/b test requirements when mounted on appropriate thermal mass.

It features a low clamping ratio (VC/VBR ≈ 1.45) and tight VBR tolerance (±5.4% at IT = 5 mA), ensuring predictable overvoltage limiting during fast-rising transients. Thermal resistance RθJC is 0.8 °C/W with ideal heatsink, supporting sustained power dissipation up to 8 W in steady-state conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VWM10.0 V - Maximum continuous reverse operating voltage before conduction begins; sets system-level overvoltage threshold for 12 V nominal automotive rails.
VBR (min/max)11.1 / 12.3 V at IT = 5 mA - Confirmed breakdown range ensures reliable turn-on margin above VWM while avoiding false triggering.
VC @ IPPM17.0 V at 388 A (10/1000 µs) - Clamping voltage defines worst-case downstream voltage stress during surge events.
PPPM (10/1000 µs)6600 W - Peak impulse power rating determines survivability against ISO 7637-2 Load Dump transients.
TJ max+175 °C - Enables placement near high-temperature engine compartments without derating concerns.
RθJC0.8 °C/W - Low thermal resistance allows effective heat transfer to heatsink, critical for maintaining reliability under repeated surges.

Pinout & Package

Package: DO-218AB molded plastic case with matte tin-plated leads, UL 94V-0 rated, polarity marked by cathode band. Weight: 2.691 g.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry point (unidirectional)Connected to ground or low-side return path; defines directionality of surge shunting.
CathodeReverse-biased terminal (marked band)Connected to protected line (e.g., battery rail); conducts during overvoltage to clamp voltage.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive use across temperature, humidity, and mechanical stress tests per JESD22 standards.
Junction temperature rating: −55 °C to +175 °CSupports operation in extreme under-hood environments without thermal shutdown or parameter drift.
Meets ISO 7637-2 and ISO 16750-2 surge specsGuarantees robustness against real-world automotive electrical transients including load dump and jump-start pulses.
IEC 61000-4-2 Level 4 & ISO 10605 Level L4 compliantProvides validated ESD immunity up to ±15 kV contact / ±25 kV air discharge for system-level EMC certification.
DO-218AB package with JESD201 Class 2 whisker resistanceEnsures long-term solder joint integrity and reliability in high-vibration automotive applications.

Applications

Engine Control Unit (ECU) Power Input ProtectionBody Control Module (BCM) Battery Rail Protection

Use Scenario: Protects microcontroller power supply inputs from load dump transients during alternator regulation failure in gasoline/diesel engines.

IC Role / Device Role / Timing Role: Unidirectional TVS clamps reverse surge energy to safe levels within nanoseconds, preserving downstream DC/DC converters and LDOs.

Use Value: Prevents latch-up or permanent damage to 5 V/3.3 V logic supplies by limiting voltage to ≤17.0 V during 6600 W transients.

Use Scenario: Shields BCM power inputs from jump-start surges and battery reversal events in vehicle body electronics.

IC Role / Device Role / Timing Role: Acts as primary overvoltage shunt on 12 V main rail, absorbing energy before it reaches CAN transceivers and sensor interfaces.

Use Value: Maintains functional safety by preventing brownout or reset of microcontrollers during ISO 16750-2 Pulse 4a (jump start) events.

Advanced Driver Assistance Systems (ADAS) Camera Power LineElectric Power Steering (EPS) Motor Driver Supply

Use Scenario: Secures 12 V input to image sensor modules exposed to harsh EMI and load dump in front-end camera housings.

IC Role / Device Role / Timing Role: Fast-response TVS suppresses sub-100 ns transients induced by nearby solenoid switching or ignition noise.

Use Value: Eliminates video corruption or frame loss caused by transient-induced supply rail collapse or digital logic upset.

Use Scenario: Protects H-bridge gate drivers and current sense amplifiers from inductive kickback during EPS motor commutation.

IC Role / Device Role / Timing Role: Absorbs repetitive 10/1000 µs surges generated by PWM-controlled motor windings and regenerative braking.

Use Value: Extends lifetime of MOSFET drivers by limiting voltage overshoot to ≤17.0 V, reducing gate oxide stress and avalanche wear.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ10ALower PPPM (400 W), smaller SMA package, VBR = 11.1–12.3 V, VC = 16.0 V @ 25.1 ANot suitable for load dump; limited to ESD and low-energy transients in non-automotive consumer systemsSelect only for cost-sensitive, low-power applications where ISO 7637-2 compliance is not required.
SM8S10ASame DO-218AB package, higher PPPM (6600 W), identical VWM/VBR/VC specs, but rated for 175 °C and AEC-Q101Direct functional match; differs only in manufacturer and minor process optimizationValid alternative if TLD8S10AH supply is constrained; verify traceability and lot-level qualification for automotive production.

Compared with SMAJ10A and SM8S10A, the TLD8S10AH provides identical clamping performance and thermal capability but is specifically characterized for automotive load dump waveforms and supplied with full AEC-Q101 documentation - making it the preferred choice for Tier 1 OEM designs requiring audit-ready compliance evidence.

Availability

TLD8S10AH is available at Aetrix Electronics and suitable for automotive ECU power protection, ADAS camera module surge suppression, and electric power steering system design requiring stable component supply and long-term lifecycle support.

Supply support for TLD8S10AH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Company (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, TVS diodes, and automotive-qualified components since 1979.

The TLD8S series was developed specifically for high-reliability automotive transient suppression, targeting ISO 7637-2 Load Dump and ISO 16750-2 Pulse 4a compliance in engine bay and chassis-mounted electronics.

FAQ

What is the maximum clamping voltage of the TLD8S10AH during a 10/1000 µs surge event?

The TLD8S10AH has a maximum clamping voltage (VC) of 17.0 V at 388 A peak impulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured per JEDEC standards and ensures downstream circuitry remains below destructive voltage thresholds during automotive load dump events. The TLD8S10AH maintains this clamping performance across its full operating temperature range.

Is the TLD8S10AH qualified for automotive applications?

Yes, the TLD8S10AH is AEC-Q101 qualified and designed explicitly for automotive use. It meets ISO 7637-2 (Pulse 5a/b), ISO 16750-2 (Pulse 4a), and ISO 10605 Level L4 requirements. Its −55 °C to +175 °C junction temperature range and JESD201 Class 2 whisker resistance further validate suitability for under-hood deployment. The TLD8S10AH carries full qualification reports traceable to Taiwan Semiconductor's production lots.

What is the difference between TLD8S10AH and TLD8S10CAH?

The TLD8S10AH is unidirectional, while TLD8S10CAH is bidirectional - meaning the latter conducts in both directions and lacks polarity marking. Both share identical VWM (10.0 V), VBR (11.1–12.3 V), and PPPM (6600 W) ratings, but TLD8S10CAH is used where AC-coupled or dual-polarity surge protection is needed. The TLD8S10AH must be oriented correctly in-circuit with cathode toward the protected line.

Does the TLD8S10AH require a heatsink for standard automotive operation?

The TLD8S10AH does not require an external heatsink for single-event surge suppression, as its 6600 W rating applies to short-duration transients. However, for repeated surge duty cycles or elevated ambient temperatures (>105 °C), thermal design using its RθJC = 0.8 °C/W and recommended PCB copper area per DO-218AB footprint is essential. The TLD8S10AH's thermal performance assumes mounting on ≥1 in² of 2 oz copper with thermal vias.

What packaging format is available for the TLD8S10AH?

The TLD8S10AH is supplied in DO-218AB package on 750-piece tape-and-reel format, per ordering code TLD8S10AH. The reel complies with EIA-481-D standards and includes moisture sensitivity level (MSL) 1 rating per J-STD-020, allowing unlimited floor life at ≤30 °C/60% RH. No dry pack or baking is required prior to SMT assembly. The TLD8S10AH marking code "TLD8S10A" appears on the device body.

TLD8S10AH Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Package/Case:
DO-218AB
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
10V
Voltage - Breakdown (Min):
11.1V
Voltage - Clamping (Max) @ Ipp:
17V
Current - Peak Pulse (10/1000µs):
388A
Power - Peak Pulse:
6600W (6.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

TLD8S10AH FAQ

1.How can I place an order for TLD8S10AH through Aetrix?

Please submit a Request for Quotation (RFQ) for TLD8S10AH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TLD8S10AH reliable?

The price and inventory of TLD8S10AH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLD8S10AH is usually 5 days.

3.What payment methods are accepted for TLD8S10AH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLD8S10AH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TLD8S10AH?

TLD8S10AH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TLD8S10AH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TLD8S10AH?

For technical support, including TLD8S10AH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLD8S10AH requirements.

6.How does Aetrix verify that TLD8S10AH is sourced from the original manufacturer or authorized distributors?

All TLD8S10AH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLD8S10AH meets industry standards.

7.What is the process for return or replacement of TLD8S10AH?

All TLD8S10AH units undergo pre-shipment inspection (PSI). If there is an issue with TLD8S10AH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TLD8S10AH part is unused and in its original packaging.

Return procedure for TLD8S10AH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TLD8S10AH Tags

  • TLD8S10AH
  • TLD8S10AH PDF
  • TLD8S10AH Datasheet
  • TLD8S10AH Specifications
  • TLD8S10AH Images
  • Taiwan Semiconductor Corporation
  • Taiwan Semiconductor Corporation TLD8S10AH
  • Buy TLD8S10AH
  • TLD8S10AH Price
  • TLD8S10AH Distributor
  • TLD8S10AH Supplier
  • TLD8S10AH Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER