Taiwan Semiconductor Corporation TLD8S17AH

Overview

TLD8S17AH from Taiwan Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-218AB package, designed for automotive load dump protection. It features 17.0 V working stand-off voltage (VWM), 18.9–20.9 V breakdown voltage (VBR) at 5 mA, 27.6 V clamping voltage (VC) at 239 A peak impulse current, and 6600 W peak pulse power (10/1000 µs). It operates across –55 °C to +175 °C and meets AEC-Q101, ISO 7637-2, and IEC 61000-4-2 Level 4.

For engineers reviewing the TLD8S17AH datasheet, TLD8S17AH pinout, TLD8S17AH application, or TLD8S17AH equivalent, key selection criteria include its 17 V stand-off rating, 27.6 V clamping performance under 239 A surge, DO-218AB thermal resistance of 0.8 °C/W, AEC-Q101 qualification, and compliance with automotive surge standards ISO 7637-2 and ISO 16750-2.

Technical Context

The TLD8S17AH employs junction passivation optimized design technology to sustain 175 °C junction temperature operation, enabling high-reliability deployment in under-hood automotive environments. Its unidirectional configuration provides low forward voltage (VF ≤ 1.8 V at 100 A) and supports 700 A peak forward surge current (8.3 ms half-sine).

It delivers 6600 W non-repetitive peak impulse power with 10/1000 µs waveform and 5200 W with 10/10000 µs waveform, backed by thermal performance validated via R_θJC = 0.8 °C/W under ideal heatsink conditions. The device exhibits a typical VBR temperature coefficient of 0.082 %/°C.

Key Specifications

Pinout & Package

Package: DO-218AB - Surface-mount molded plastic case rated UL 94V-0, matte tin-plated leads, polarity marked by cathode band, weight ≈ 2.691 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMAJ17A and TPSMF17A, the TLD8S17AH uniquely combines AEC-Q101 qualification, DO-218AB thermal performance (R_θJC = 0.8 °C/W), and 6600 W surge capacity-enabling single-device compliance with full automotive load dump requirements without parallel devices or heatsink augmentation.

Availability

TLD8S17AH is available at Aetrix Electronics and suitable for engine control units, body control modules, ADAS camera power supplies, and electric power steering systems requiring stable component supply across extended automotive production lifecycles.

Supply support for TLD8S17AH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, analog ICs, and protection components for automotive and industrial markets.

The TLD8SxxAH series was developed specifically to meet stringent ISO 7637-2 and AEC-Q101 requirements for high-energy transient suppression in 12 V automotive power networks.

FAQ

What is the maximum clamping voltage of the TLD8S17AH under standard test conditions?

The TLD8S17AH has a maximum clamping voltage (VC) of 27.6 V when subjected to a 10/1000 µs surge waveform at its rated peak impulse current of 239 A. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during worst-case transient events. The TLD8S17AH maintains this clamping performance across its full operating temperature range, supporting robust design margining in automotive environments.

Is the TLD8S17AH qualified for automotive applications?

Yes, the TLD8S17AH is AEC-Q101 qualified and explicitly designed for automotive use. It meets ISO 7637-2 (load dump), ISO 16750-2 (electrical loads), and IEC 61000-4-2 Level 4 (ESD) standards. Its 175 °C junction temperature rating, moisture sensitivity level 1, and JESD201 class 2 whisker resistance further validate its suitability for under-hood and safety-critical vehicle systems.

What package type does the TLD8S17AH use, and why is it significant?

The TLD8S17AH uses the DO-218AB surface-mount package, which provides superior thermal performance (R_θJC = 0.8 °C/W) compared to smaller packages like SMA or SMC. This enables efficient heat dissipation during high-energy transients, allowing the TLD8S17AH to deliver its full 6600 W peak pulse power rating without derating. The DO-218AB footprint also supports automated assembly and mechanical robustness in vibration-prone automotive applications.

How does the TLD8S17AH differ from bidirectional variants like TLD8S17CAH?

The TLD8S17AH is unidirectional and intended for DC line protection where polarity is fixed, offering a forward voltage drop ≤ 1.8 V at 100 A and 700 A peak forward surge current. In contrast, TLD8S17CAH is bidirectional and symmetrical, lacking forward conduction capability-making it suitable for AC or differential signal lines. Both share identical VWM, VBR, VC, and PPPM ratings, but their circuit roles and surge conduction paths differ fundamentally.

What is the temperature coefficient of breakdown voltage for the TLD8S17AH?

The TLD8S17AH has a typical temperature coefficient of breakdown voltage (αT) of 0.082 %/°C. This allows engineers to calculate VBR at elevated junction temperatures using the formula: VBR at TJ = VBR at 25 °C × (1 + αT × (TJ − 25)). For example, at TJ = 150 °C, VBR increases by approximately 10.3%, ensuring predictable clamping behavior across the full –55 °C to +175 °C operating range of the TLD8S17AH.