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Taiwan Semiconductor Corporation TLD8S30AH

Part No.:
TLD8S30AH
Manufacturer:
Taiwan Semiconductor Corporation
Category:
TVS Diodes
Package:
DO-218AB
Datasheet:
AetrixTLD8S30AH.pdf
Description:
TVS DIODE 30VWM 48.4VC DO218AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,291

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Product details

Overview

TLD8S30AH from Taiwan Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-218AB package, rated for 30 V working stand-off voltage, 33.3–36.8 V breakdown voltage at 5 mA, 48.4 V clamping voltage at 136 A peak impulse current, and 6600 W peak pulse power (10/1000 µs). It delivers automotive-grade surge protection for load dump events in 12 V/24 V vehicle power systems.

For engineers reviewing the TLD8S30AH datasheet, TLD8S30AH pinout, TLD8S30AH application, or TLD8S30AH equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction capability, ISO 7637-2/16750-2 compliance, DO-218AB thermal performance (RθJC = 0.8 °C/W), and unidirectional polarity marking.

Technical Context

The TLD8S30AH uses junction passivation optimized design to sustain 175 °C continuous operation and withstand repetitive load dump transients per ISO 7637-2 Pulse 5a/b. Its unidirectional configuration provides forward conduction path with 1.8 V max forward voltage at 100 A, enabling low-loss clamping during reverse-polarity surges.

It meets IEC 61000-4-2 Level 4 and ISO 10605 L4 ESD immunity, and exhibits a temperature coefficient of VBR of +0.090 %/°C - enabling accurate breakdown voltage prediction across -55 °C to +175 °C operating range using the provided linear formula.

Key Specifications

ParameterValue and Actual Design Meaning
VWM30.0 V - Maximum continuous reverse operating voltage before leakage exceeds 10 µA
VBR (min/max)33.3 V / 36.8 V at 5 mA - Confirmed breakdown threshold defining turn-on precision under surge conditions
VC @ IPPM48.4 V at 136 A (10/1000 µs) - Clamping voltage limiting downstream circuit stress during worst-case transients
PPPM6600 W (10/1000 µs) - Peak surge power handling capacity validated per REA-defined waveform
TJ max+175 °C - Enables placement near high-temperature engine bay components without derating
RθJC0.8 °C/W - Thermal resistance from junction to case, supporting effective heatsinking in constrained layouts
αT+0.090 %/°C - Temperature coefficient used to calculate VBR drift over full operating range

Pinout & Package

DO-218AB surface-mount package with cathode band marking; two-terminal device (anode and cathode); matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry / Reverse surge return pathConnected to ground or low-side reference in unidirectional TVS configuration
CathodeReverse surge input / Forward current exitConnected to protected line (e.g., battery rail); polarity marked by band on molded body

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive underhood use including temperature cycling, mechanical shock, and humidity exposure
ISO 7637-2 & ISO 16750-2 complianceGuarantees robustness against load dump (Pulse 5a/b) and supply voltage variation transients in 12 V/24 V systems
Junction passivation optimized designReduces leakage drift and improves long-term reliability under high-temperature bias stress
Moisture sensitivity level 1Enables standard SMT reflow without baking or dry pack requirements
UL 94V-0 molding compoundMeets flammability safety standards for enclosed automotive electronics enclosures

Applications

Engine Control Unit (ECU) Power Input ProtectionBody Control Module (BCM) Battery Rail Protection

Use Scenario: Protects microcontroller power rails from load dump transients during alternator regulation failure in gasoline/diesel vehicles.

IC Role / Device Role / Timing Role: Unidirectional TVS clamps reverse-polarity surges while allowing normal forward conduction during system startup.

Use Value: Limits voltage excursion to ≤48.4 V at 136 A, preventing damage to 3.3 V/5 V LDOs and MCU I/Os downstream of the protection stage.

Use Scenario: Shields BCM power inputs from ISO 7637-2 Pulse 5b transients induced by sudden battery disconnect/reconnect events.

IC Role / Device Role / Timing Role: Acts as primary surge shunt on 12 V main supply rail, absorbing up to 6600 W for 1 ms without degradation.

Use Value: Maintains <10 µA leakage at 30 V stand-off, ensuring minimal quiescent current draw in always-on vehicle modules.

Advanced Driver Assistance Systems (ADAS) Camera Power LineElectric Power Steering (EPS) Motor Driver Supply

Use Scenario: Safeguards image sensor and SerDes IC power inputs against coupled transients from nearby high-current actuators.

IC Role / Device Role / Timing Role: Fast-response unidirectional clamp placed upstream of DC/DC converter, suppressing sub-µs rise-time spikes.

Use Value: Delivers 0.8 °C/W thermal resistance to sustain 175 °C junction temperature during repeated surge events in compact camera housings.

Use Scenario: Protects H-bridge gate drivers and current sense amplifiers from inductive kickback during EPS motor commutation.

IC Role / Device Role / Timing Role: Positioned at motor driver power input to clamp both load dump and switching-induced overshoot.

Use Value: Withstands 700 A peak forward surge (8.3 ms half-sine), supporting fault-tolerant operation during motor stall conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ30ALower PPPM (400 W), SMA package, RθJC ≈ 45 °C/W, no AEC-Q101 qualificationNot suitable for automotive underhood; limited to industrial or consumer-grade 30 V rail protectionSelect only for non-automotive designs where cost outweighs thermal and reliability requirements
SMCJ30ASame DO-214AB package, PPPM = 1500 W, RθJC ≈ 1.5 °C/W, AEC-Q101 qualified but TJ max = 150 °CAcceptable for cabin modules but not engine bay due to lower thermal limit and reduced surge marginUse when 1500 W surge capacity suffices and board space allows larger footprint than DO-218AB

Compared with SMAJ30A and SMCJ30A, the TLD8S30AH provides 4.4× higher peak power rating, 56× lower thermal resistance, and full AEC-Q101/ISO 7637-2 compliance - making it the only option qualified for high-reliability automotive load dump protection in thermally demanding locations.

Availability

TLD8S30AH is available at Aetrix Electronics and suitable for automotive ECU power protection, ADAS camera module surge suppression, and electric power steering system design requiring stable component supply and long-term lifecycle support.

Supply support for TLD8S30AH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Company (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, TVS diodes, and automotive-qualified components since 1979.

The TLD8SxxAH series was developed specifically for automotive load dump and ISO 16750-2 surge protection, emphasizing high-temperature operation, low thermal resistance, and AEC-Q101 reliability in compact DO-218AB packaging.

FAQ

What is the maximum clamping voltage of the TLD8S30AH under standard test conditions?

The TLD8S30AH has a maximum clamping voltage (VC) of 48.4 V when subjected to a 10/1000 µs surge waveform at its rated peak pulse current of 136 A. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuits during worst-case transients. The TLD8S30AH maintains this clamping performance across its full operating temperature range due to its specified temperature coefficient of VBR.

Is the TLD8S30AH suitable for bidirectional surge protection applications?

No, the TLD8S30AH is a unidirectional TVS diode and is not rated for bidirectional operation. For bidirectional protection, Taiwan Semiconductor offers the TLD8S30CAH variant, which shares identical voltage ratings and package but features symmetrical breakdown behavior. Using the TLD8S30AH in a bidirectional configuration risks failure during positive-going transients on the anode side, as it lacks reverse-blocking capability beyond its VWM rating.

Does the TLD8S30AH require heatsinking in typical automotive applications?

The TLD8S30AH benefits significantly from heatsinking due to its 0.8 °C/W junction-to-case thermal resistance - especially during repetitive surge events. While it can absorb single 6600 W pulses without external heatsink, sustained or frequent transients (e.g., in start-stop systems) require thermal interface to a copper pour or metal-core PCB. The DO-218AB package's exposed cathode pad is designed for direct thermal coupling, and Taiwan Semiconductor specifies performance "with ideal heatsink" in datasheet thermal curves.

What is the leakage current specification for the TLD8S30AH at its working stand-off voltage?

At its working stand-off voltage (VWM) of 30.0 V and ambient temperature of 25 °C, the TLD8S30AH exhibits a maximum blocking leakage current (IR) of 10 µA. At elevated junction temperature (TJ = 175 °C), leakage increases to ≤150 µA - a critical parameter for low-power always-on automotive modules where quiescent current budgets are tight. This leakage remains well below thresholds that would trigger undervoltage lockout or drain battery reserves.

How does the TLD8S30AH meet ISO 7637-2 Pulse 5a and 5b requirements?

The TLD8S30AH meets ISO 7637-2 Pulse 5a (12 V system) and Pulse 5b (24 V system) through its 6600 W peak pulse power rating (10/1000 µs), 48.4 V clamping voltage, and ability to sustain 175 °C junction temperature during multi-pulse testing. Its DO-218AB package enables rapid heat dissipation, and its junction passivation ensures stable VBR and low leakage after repeated exposure - all verified per AEC-Q101 stress test protocols aligned with ISO 7637-2 validation methodology.

TLD8S30AH Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Package/Case:
DO-218AB
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
30V
Voltage - Breakdown (Min):
33.3V
Voltage - Clamping (Max) @ Ipp:
48.4V
Current - Peak Pulse (10/1000µs):
136A
Power - Peak Pulse:
6600W (6.6kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-218AB

TLD8S30AH FAQ

1.How can I place an order for TLD8S30AH through Aetrix?

Please submit a Request for Quotation (RFQ) for TLD8S30AH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TLD8S30AH reliable?

The price and inventory of TLD8S30AH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLD8S30AH is usually 5 days.

3.What payment methods are accepted for TLD8S30AH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLD8S30AH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TLD8S30AH?

TLD8S30AH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TLD8S30AH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TLD8S30AH?

For technical support, including TLD8S30AH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLD8S30AH requirements.

6.How does Aetrix verify that TLD8S30AH is sourced from the original manufacturer or authorized distributors?

All TLD8S30AH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLD8S30AH meets industry standards.

7.What is the process for return or replacement of TLD8S30AH?

All TLD8S30AH units undergo pre-shipment inspection (PSI). If there is an issue with TLD8S30AH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TLD8S30AH part is unused and in its original packaging.

Return procedure for TLD8S30AH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TLD8S30AH Tags

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