Vishay Siliconix TP0610K-T1
- Part No.:
- TP0610K-T1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
TP0610K-T1.pdf
- Description:
- MOSFET P-CH 60V 185MA SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,456
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Product details
Overview
TP0610K-T1 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET designed for high-side switching in low-power DC circuits. It features -60 V drain-source voltage, 6 Ω RDS(on) at VGS = -10 V, -2 V typical gate threshold, 20 ns typical turn-on time, and 2000 V HBM ESD rating - enabling robust control of relays, solenoids, and lamps in battery-operated systems.
For engineers reviewing the TP0610K-T1 datasheet, TP0610K-T1 pinout, TP0610K-T1 application, or TP0610K-T1 equivalent, key selection criteria include verified -60 V blocking capability, low-voltage gate drive compatibility down to -2 V, SOT-23 package thermal limits (350 °C/W RthJA), and confirmed suitability for solid-state relay and power converter control functions.
Technical Context
This device operates as a single P-channel MOSFET with depletion-free enhancement-mode behavior, requiring negative gate-to-source bias for conduction. Its trench-based silicon structure delivers low RDS(on) and fast switching (20 ns td(on), 35 ns td(off)) while maintaining stable VGS(th) (-1 to -3 V) across -55 to 150 °C junction temperature range.
The TP0610K-T1 integrates a body diode with -1.4 V forward voltage at -200 mA, supports ±20 V gate drive, and exhibits 23 pF input capacitance (Ciss) at VDS = -25 V - characteristics optimized for low-duty-cycle, low-current switching where gate charge (1.7 nC total) and capacitive loading must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - maximum reverse-blocking voltage before avalanche breakdown |
| RDS(on) | 6 Ω at VGS = -10 V - ensures <1.5 V conduction loss at -500 mA load current |
| VGS(th) | -1 to -3 V (typ. -2 V) - enables direct interface with 3.3 V or 5 V logic when referenced to source |
| ID (cont.) | -185 mA at TA = 25 °C - defines maximum steady-state current under FR4 board conditions |
| td(on) | 20 ns - supports >10 MHz switching in low-energy control loops |
| Ciss | 23 pF - limits gate drive power and minimizes Miller-induced oscillation risk |
| PD | 350 mW at TA = 25 °C - constrains usable power in unheatsinked SOT-23 layouts |
Pinout & Package
TP0610K-T1 is housed in a standard SOT-23 (TO-236) surface-mount package measuring 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm, with gull-wing leads and 0.95 mm lead pitch. The package is rated for 350 °C/W junction-to-ambient thermal resistance on FR4 board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path and gate reference node | Connected to system ground or positive rail in high-side configuration; sets VGS reference |
| 2 (Gate) | Control electrode for channel formation | Accepts negative voltage relative to source to turn on; requires <1.7 nC charge for full switching |
| 3 (Drain) | Load connection terminal | Switches negative current toward load; rated for -60 V transient and continuous -185 mA |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 6 Ω RDS(on) in SOT-23 without compromising gate charge or thermal performance |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally constrained deployments |
| 2000 V HBM ESD protection | Eliminates need for external ESD clamps in handling-sensitive portable designs |
| Low VGS(th) variation over temperature | Stable -1 to -3 V threshold across -55 to 150 °C enables predictable turn-on in wide-temperature environments |
| Fast switching with low Ciss | 20 ns td(on) and 23 pF Ciss reduce transition losses in PWM-driven loads like solenoids and LEDs |
Applications
| Relay/Solenoid Drivers | Battery-Powered Portable Devices |
|---|---|
Use Scenario: Driving 12 V automotive relays or 5 V door-lock solenoids in intermittent-activation systems. IC Role / Device Role / Timing Role: High-side switch controlling current flow from battery to inductive load. Use Value: -2 V VGS(th) allows direct microcontroller GPIO drive; 6 Ω RDS(on) limits coil heating to <150 mW at 150 mA. | Use Scenario: Power sequencing and load switching in handheld medical monitors or wireless sensors. IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystems to extend battery life. Use Value: 350 mW power dissipation limit and SOT-23 footprint support compact PCB layout; -60 V rating accommodates Li-ion stack transients. |
| Power Supply Converter Circuits | Solid-State Relays (SSR) |
Use Scenario: Synchronous rectification or auxiliary bias winding control in isolated flyback converters. IC Role / Device Role / Timing Role: Low-duty-cycle synchronous switch managing energy transfer during off-time. Use Value: 20 ns td(on) and 1.7 nC Qg minimize dead-time losses; body diode VSD = -1.4 V reduces reverse recovery stress. | Use Scenario: Replacing electromechanical relays in HVAC controllers or industrial PLC I/O modules. IC Role / Device Role / Timing Role: Solid-state isolation switch replacing moving contacts in AC/DC control paths. Use Value: 2000 V ESD rating and -55 to 150 °C operating range ensure reliability in noisy, thermally variable environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305U-7 | RDS(on) = 45 mΩ at VGS = -4.5 V; higher current rating (-4.2 A); larger SOT-23-3 footprint | Supports higher-power loads but requires PCB redesign due to different thermal pad and pinout | Select when >200 mA continuous current or lower conduction loss is required; verify layout compatibility |
| SI2301BDS-T1-GE3 | RDS(on) = 115 mΩ at VGS = -2.5 V; lower VDS (-20 V); same SOT-23 package and pinout | Limited to 20 V systems; better suited for ultra-low-voltage logic-level drive | Choose for 3.3 V/5 V systems where -20 V rating suffices and tighter gate threshold control is needed |
Compared with DMG2305U-7 and SI2301BDS-T1-GE3, the TP0610K-T1 offers unique balance of -60 V rating, SOT-23 compatibility, and -2 V threshold - making it optimal for space-constrained, medium-voltage high-side switching where moderate current (<200 mA) and robust transient tolerance are prioritized.
Availability
TP0610K-T1 is available at Aetrix Electronics and suitable for relay drivers, battery-powered portable devices, and power supply converter circuits requiring stable component supply, halogen-free compliance, and verified SOT-23 manufacturability.
Supply support for TP0610K-T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The TP0610K-T1 belongs to Vishay's TrenchFET® P-channel MOSFET family, engineered for high-side switching in space-limited, low-power DC control applications including industrial automation interfaces and portable equipment power management.
FAQ
What is the maximum continuous drain current for TP0610K-T1 at 100 °C ambient temperature?
The TP0610K-T1 supports -115 mA continuous drain current at TA = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package on FR4 board (RthJA = 350 °C/W). At 25 °C ambient, the rating increases to -185 mA. Designers must verify board copper area and airflow to sustain this current without exceeding 150 °C maximum junction temperature.
Is TP0610K-T1 suitable for high-side switching with 3.3 V microcontroller GPIO?
Yes, TP0610K-T1 is suitable for high-side switching driven directly by 3.3 V GPIO, because its typical gate threshold voltage is -2 V and maximum is -3 V. When the source is tied to VCC, applying 0 V to the gate yields VGS = -VCC, turning the device fully on. At 3.3 V supply, VGS = -3.3 V exceeds the threshold, ensuring reliable conduction. Confirm layout avoids floating gate during power-up.
Does TP0610K-T1 have an integrated body diode, and what is its forward voltage?
Yes, TP0610K-T1 includes an intrinsic body diode with a forward voltage of -1.4 V at -200 mA source current and VGS = 0 V, as measured per the datasheet's Typical Characteristics. This diode conducts from source to drain and supports freewheeling in inductive load applications such as relay coils, though external flyback diodes are still recommended for high-energy transients.
What is the gate charge requirement for TP0610K-T1, and how does it affect driving circuit design?
The TP0610K-T1 has a total gate charge (Qg) of 1.7 nC at VDS = -30 V and VGS = -15 V. This low value enables fast switching with minimal driver strength - a standard microcontroller GPIO can charge the gate in under 100 ns using a 10 Ω series resistor. Designers should limit gate resistance to ≤100 Ω to avoid excessive switching losses while maintaining EMI control.
How does the thermal performance of TP0610K-T1 compare between FR4 and enhanced thermal PCBs?
The TP0610K-T1's specified RthJA is 350 °C/W on standard FR4 board with no added copper. On PCBs with 1-inch² 2-oz copper pour connected to the source pad, thermal resistance improves to ~120 °C/W. This allows up to ~290 mA continuous current before reaching 150 °C junction temperature at 25 °C ambient - a 55 % increase over baseline. Layout optimization is essential for sustained high-current operation.
TP0610K-T1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 185mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.7 nC @ 15 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 23 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
TP0610K-T1 FAQ
1.How can I place an order for TP0610K-T1 through Aetrix?
Please submit a Request for Quotation (RFQ) for TP0610K-T1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TP0610K-T1 reliable?
The price and inventory of TP0610K-T1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TP0610K-T1 is usually 5 days.
3.What payment methods are accepted for TP0610K-T1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TP0610K-T1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TP0610K-T1?
TP0610K-T1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TP0610K-T1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TP0610K-T1?
For technical support, including TP0610K-T1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TP0610K-T1 requirements.
6.How does Aetrix verify that TP0610K-T1 is sourced from the original manufacturer or authorized distributors?
All TP0610K-T1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TP0610K-T1 meets industry standards.
7.What is the process for return or replacement of TP0610K-T1?
All TP0610K-T1 units undergo pre-shipment inspection (PSI). If there is an issue with TP0610K-T1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TP0610K-T1 part is unused and in its original packaging.
Return procedure for TP0610K-T1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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