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Texas Instruments TPD2EUSB30DRTR
- Part No.:
- TPD2EUSB30DRTR
- Manufacturer:
- Texas Instruments
- Category:
- TVS Diodes
- Package:
- 3-SMD, SOT-23-3 Variant
- Datasheet:
-
TPD2EUSB30DRTR.pdf
- Description:
- TVS DIODE 5.5VWM 8VC SOT9X3
- Quantity:
- Payment:
- Shipping:
Inventory:177,429
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Product details
Overview
TPD2EUSB30DRTR from Texas Instruments is a 2-channel unidirectional TVS diode array for ESD protection of USB 3.0 SuperSpeed differential data lines (D+, D−), featuring 0.7 pF typical IO-to-GND capacitance, 8 kV IEC 61000-4-2 contact ESD rating, and 5 A (8/20 µs) IEC 61000-4-5 surge current capability. It operates over −40°C to +85°C and supports 5 Gbps data rates in notebook and portable computing interfaces.
For engineers reviewing the TPD2EUSB30DRTR datasheet, TPD2EUSB30DRTR pinout, TPD2EUSB30DRTR application, or TPD2EUSB30DRTR equivalent, this device delivers low-clamp-voltage transient suppression with minimal signal integrity impact-critical for high-speed USB 3.0 layout integrity, eye diagram preservation, and system-level ESD robustness validation.
Technical Context
The TPD2EUSB30DRTR implements a dual-channel, flow-through SOT-9X3 (DRT) package topology with dedicated D+, D−, and GND terminals. Its internal structure uses matched low-capacitance clamping diodes referenced to ground, enabling bidirectional ESD event handling without DC bias requirements.
It functions passively: during transients exceeding ±4.5 V (breakdown) or below −0.6 V (forward conduction), it shunts energy to GND via low-dynamic-resistance (0.6 Ω typ) paths. Clamping voltage remains ≤8 V at 1 A, preserving downstream PHYs while maintaining <2 ps jitter penalty on 5 Gbps differential signals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating (IEC 61000-4-2) | ±8 kV contact discharge - meets Level 4, ensuring robustness against human-hand ESD events at connector interface |
| Surge Rating (IEC 61000-4-5) | 5 A (8/20 µs) per line - sustains high-energy surges without degradation, supporting industrial-grade USB port reliability |
| Capacitance (IO-to-GND) | 0.7 pF typical - minimizes signal loading to preserve 5 Gbps eye opening and insertion loss (<−3 dB up to 7.4 GHz) |
| Clamp Voltage (VCLAMP) | ≤8 V at 1 A - limits stress on connected USB 3.0 PHY, preventing latch-up or damage during ESD transients |
| Dynamic Resistance (RDYN) | 0.6 Ω typical - ensures fast, low-impedance path to ground, reducing voltage overshoot during nanosecond-scale ESD pulses |
| Breakdown Voltage (VBR) | 7 V minimum at 1 mA - provides margin above 5.5 V max operating voltage, avoiding false triggering during normal operation |
| Operating Temperature | −40°C to +85°C - qualified for consumer and industrial portable electronics environments |
Pinout & Package
SOT-9X3 (DRT) package: 1.00 mm × 0.80 mm body, 0.55 mm max height, 3-pin flow-through configuration optimized for USB 3.0 differential trace routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D+ | High-speed IO clamp anode | ESD protection node for USB 3.0 SuperSpeed positive differential line; connects directly to host/device connector |
| D− | High-speed IO clamp anode | ESD protection node for USB 3.0 SuperSpeed negative differential line; maintains differential pair symmetry with D+ |
| GND | Common reference cathode | Low-inductance return path to PCB ground plane; requires direct via connection to minimize impedance during 30-A ESD transients |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through pin mapping | Enables straight-line PCB routing between USB connector and PHY, eliminating stubs and preserving differential impedance continuity |
| 0.7 pF IO-to-GND capacitance | Reduces capacitive loading on 5 Gbps differential pairs, limiting eye closure to ~2 ps jitter penalty in validated test setups |
| Uni-directional clamping architecture | Prevents forward conduction during normal 0–5.5 V signal swing while activating only during overvoltage transients |
| 1-mm × 0.8-mm DRT package | Minimizes board area and parasitic inductance-ideal for space-constrained USB Type-A/B/Mini connectors on thin client designs |
| IEC 61000-4-5 surge compliance | Validated for 5 A (8/20 µs) peak pulse, enabling use in systems requiring immunity to lightning-induced surges on external ports |
Applications
| Notebook USB 3.0 Ports | Set-Top Box Front-Panel Interfaces |
|---|---|
Use Scenario: Protecting exposed USB 3.0 Type-A receptacles on ultrabooks from user-hand ESD events during cable insertion/removal. IC Role / Device Role / Timing Role: Passive ESD clamp placed immediately adjacent to connector, shunting ±8 kV transients to chassis ground before reaching USB controller PHY. Use Value: Prevents PHY latch-up or permanent damage while maintaining <−3 dB insertion loss up to 7.4 GHz-ensuring full 5 Gbps link negotiation and stable SuperSpeed enumeration. |
Use Scenario: Securing front-panel USB service ports on cable/satellite set-top boxes subject to frequent technician handling in dry environments. IC Role / Device Role / Timing Role: Dual-channel TVS array providing symmetric clamping on D+/D− lines, referenced to isolated digital ground plane. Use Value: Achieves system-level IEC 61000-4-2 Level 4 compliance without degrading signal integrity-validated by eye diagram measurements showing <2 ps jitter increase at 5 Gbps. |
| DVD/Blu-ray Player Host Interfaces | Portable Media Player Docking Connectors |
Use Scenario: Safeguarding internal USB 3.0 upstream links between optical drive controllers and main SoC in home entertainment devices. IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor placed between SATA-USB bridge IC and rear-panel USB 3.0 port, operating within 0–5.5 V supply range. Use Value: Enables reliable hot-plug detection and 5 Gbps bulk data transfer (e.g., disc image streaming) while surviving repeated 8 kV contact discharges during field service. |
Use Scenario: Protecting micro-USB or USB-C docking interfaces on battery-powered media players during daily charging/sync cycles. IC Role / Device Role / Timing Role: Compact 3-pin DRT device mounted directly at connector footprint, minimizing trace length to reduce EMI coupling during ESD events. Use Value: Delivers certified 8 kV contact/air-gap ESD protection in <1 mm² area-critical for thin-form-factor designs where layout space near connectors is severely constrained. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2EUSB30ADRTR | Lower 4.5 V breakdown voltage; rated for 0–3.6 V operating range vs. TPD2EUSB30DRTR's 0–5.5 V | Better suited for 3.3 V USB PHYs; higher risk of false triggering on 5 V-tolerant interfaces | Select TPD2EUSB30ADRTR only when protecting strictly 3.3 V signaling domains; otherwise TPD2EUSB30DRTR offers wider voltage margin. |
| TPD4EUSB30DQAR | 4-channel USON-10 (2.5 mm × 1.0 mm) package; 0.8 pF capacitance; supports two differential pairs (e.g., USB 3.0 + SS RX/TX) | Targets dual-lane or multi-interface protection (e.g., USB 3.0 + DisplayPort Alt Mode); not pin-compatible | Choose TPD4EUSB30DQAR when protecting multiple high-speed lanes on shared connectors; TPD2EUSB30DRTR remains optimal for single-pair cost-sensitive layouts. |
Compared with TPD2EUSB30ADRTR, TPD2EUSB30DRTR provides higher voltage tolerance and avoids premature clamping in mixed-supply systems; versus TPD4EUSB30DQAR, it offers lower capacitance and smaller footprint for dedicated USB 3.0 single-pair protection-making it the preferred choice for compact, 5 V–compatible SuperSpeed endpoints.
Availability
TPD2EUSB30DRTR is available at Aetrix Electronics and suitable for notebook USB 3.0 ports, set-top box front-panel interfaces, and portable media player docking connectors requiring stable component supply across production lifecycles.
Supply support for TPD2EUSB30DRTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions, with leadership in precision analog, power management, and high-speed interface protection technologies.
The TPDxEUSB30 family was designed specifically to protect SuperSpeed USB 3.0 differential data lines from ESD and surge events while preserving signal fidelity-targeting portable, consumer, and industrial systems demanding certified IEC 61000-4-2/4-5 robustness.
FAQ
What is the maximum data rate supported by the TPD2EUSB30DRTR?
The TPD2EUSB30DRTR supports USB 3.0 SuperSpeed data rates up to 5 Gbps. Its 0.7 pF typical IO-to-GND capacitance and measured −3 dB bandwidth of 7.4 GHz ensure minimal signal degradation, with validated eye diagram testing showing only ~2 ps jitter penalty in 5 Gbps operation-confirming full compatibility with USB 3.0 physical layer requirements.
Does the TPD2EUSB30DRTR require a power supply or bias voltage?
No, the TPD2EUSB30DRTR is a passive TVS diode array and requires no external power or bias. It operates solely through its internal clamping diodes, activating only during overvoltage transients (e.g., ESD or surge). The device is rated for 0–5.5 V continuous operation on D+/D− pins, making it compatible with standard USB 3.0 signaling without additional circuitry.
What is the recommended PCB layout practice for the TPD2EUSB30DRTR?
Place the TPD2EUSB30DRTR as close as possible to the USB 3.0 connector, using flow-through routing to maintain differential pair continuity. Connect the GND pin directly to the PCB ground plane via multiple large vias, avoid sharp trace corners, and keep unprotected traces away from protected D+/D− lines to prevent EMI coupling during ESD events-per TI's validated layout guidelines for IEC 61000-4-2 compliance.
How does the TPD2EUSB30DRTR differ from the TPD2EUSB30ADRTR?
The TPD2EUSB30DRTR has a 7 V minimum breakdown voltage and 0–5.5 V operating range, while the TPD2EUSB30ADRTR features a 4.5 V breakdown and 0–3.6 V range. This makes TPD2EUSB30DRTR safer for 5 V-tolerant USB PHYs, whereas TPD2EUSB30ADRTR is optimized for strict 3.3 V domains-using the wrong variant risks false triggering or insufficient protection margin.
Is the TPD2EUSB30DRTR compliant with international ESD and surge standards?
Yes, the TPD2EUSB30DRTR is fully compliant with IEC 61000-4-2 Level 4 (±8 kV contact, ±8 kV air-gap) for ESD immunity and IEC 61000-4-5 (5 A, 8/20 µs) for surge immunity. These ratings are verified per TI's production test protocols and documented in the SLVSAC2G datasheet revision June 2021, enabling system-level certification without additional external components.
TPD2EUSB30DRTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Package/Case:
- 3-SMD, SOT-23-3 Variant
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 7V
- Voltage - Clamping (Max) @ Ipp:
- 8V
- Current - Peak Pulse (10/1000µs):
- 5A (8/20µs)
- Power - Peak Pulse:
- 45W
- Power Line Protection:
- Yes
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-3
TPD2EUSB30DRTR FAQ
1.How can I place an order for TPD2EUSB30DRTR through Aetrix?
Please submit a Request for Quotation (RFQ) for TPD2EUSB30DRTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPD2EUSB30DRTR reliable?
The price and inventory of TPD2EUSB30DRTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPD2EUSB30DRTR is usually 5 days.
3.What payment methods are accepted for TPD2EUSB30DRTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPD2EUSB30DRTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPD2EUSB30DRTR?
TPD2EUSB30DRTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPD2EUSB30DRTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPD2EUSB30DRTR?
For technical support, including TPD2EUSB30DRTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPD2EUSB30DRTR requirements.
6.How does Aetrix verify that TPD2EUSB30DRTR is sourced from the original manufacturer or authorized distributors?
All TPD2EUSB30DRTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPD2EUSB30DRTR meets industry standards.
7.What is the process for return or replacement of TPD2EUSB30DRTR?
All TPD2EUSB30DRTR units undergo pre-shipment inspection (PSI). If there is an issue with TPD2EUSB30DRTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPD2EUSB30DRTR part is unused and in its original packaging.
Return procedure for TPD2EUSB30DRTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPD2EUSB30DRTR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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