Texas Instruments TPD5E003DPFR
- Part No.:
- TPD5E003DPFR
- Manufacturer:
- Texas Instruments
- Category:
- TVS Diodes
- Package:
- 6-XFDFN
- Datasheet:
-
TPD5E003DPFR.pdf
- Description:
- TVS DIODE 5VWM 19.5VC 6X2SON
- Quantity:
- Payment:

- Shipping:

Inventory:34,572
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Product details
Overview
TPD5E003DPFR from Texas Instruments is a five-channel unidirectional ESD protection diode array designed for system-level I/O interface protection. It delivers ±15-kV IEC 61000-4-2 contact and air-gap ESD suppression, features 7-pF typical I/O capacitance at 2.5 V, 6-V minimum DC breakdown voltage, and operates across –40°C to 125°C. It is used in space-constrained mobile interfaces including SIM card slots, audio lines, and keypads.
For engineers reviewing the TPD5E003DPFR datasheet, TPD5E003DPFR pinout, TPD5E003DPFR application, or TPD5E003DPFR equivalent, this page provides verified electrical parameters, validated X2SON (DPF) package mapping, confirmed bidirectional/unidirectional configuration options, thermal resistance data (RθJA = 246.7°C/W), and real-world layout guidance for ESD-critical signal routing.
Technical Context
The TPD5E003DPFR implements five identical passive clamping diodes arranged in a common-ground topology. Each channel activates above 6 V (min) breakdown and clamps transients to ≤19.5 V at 10-A TLP current, with dynamic resistance as low as 0.3 Ω (GND→I/O). Its low 7-pF capacitance enables use on high-speed lines up to 20 Mbps without signal distortion.
It supports two operational configurations: unidirectional (five 0–5 V channels) or bidirectional (four ±5 V channels using Pin 5 as dedicated ground). In bidirectional mode, I/O capacitance drops further-enabling higher-frequency applications-while leakage remains ≤100 nA at 5 V bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Protection Level | ±15 kV IEC 61000-4-2 contact & air-gap - meets Level 4 system-level immunity requirements |
| DC Breakdown Voltage (VBR) | 6 V (min) - ensures no conduction during normal 0–5 V I/O operation |
| I/O Capacitance (CIO) | 7 pF (typ @ 2.5 V, 1 MHz) - preserves signal integrity up to ~20 Mbps on SIM/audio lines |
| Clamp Voltage (VCLAMP) | 19.5 V (max @ 10 A TLP) - limits transient overvoltage seen by protected ICs |
| Leakage Current (ILEAK) | 100 nA (max @ 5 V) - minimizes standby power loss in battery-powered wearables |
| Surge Rating | 40 W (8/20 µs pulse) - withstands repetitive surge events per IEC 61000-4-5 |
| Operating Temperature | –40°C to 125°C - supports industrial and automotive-adjacent environments |
Pinout & Package
The TPD5E003DPFR is housed in a 1.00 mm × 1.00 mm, 0.4-mm max height X2SON (DPF) package with exposed thermal pad and no leads - optimized for minimal PCB area and high-density routing in mobile designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O Channel 1 Anode | Unidirectional ESD path to GND; connects to protected signal line (e.g., SIM CLK) |
| Pin 2 | GND | Common cathode reference for all five clamping diodes; must be low-inductance connection to system ground |
| Pin 3 | I/O Channel 2 Anode | Second unidirectional ESD path; used for SIM I/O or audio mic input |
| Pin 4 | I/O Channel 3 Anode | Third unidirectional ESD path; suitable for earphone detection or SD DAT0 |
| Pin 5 | I/O Channel 4 Anode / Bidirectional Ground | In bidirectional mode, serves as dedicated ground for four channels; in unidirectional mode, functions as fourth I/O anode |
| Pin 6 | I/O Channel 5 Anode | Fifth unidirectional ESD path; commonly assigned to keypad interrupt or speakerphone line |
Key Features
| Feature | Design Value |
|---|---|
| Five-Channel Integration | Replaces five discrete TVS diodes - reduces BOM count and saves >60% board area vs. SOT-23 solutions |
| Low Capacitance (7 pF) | Enables clean signal transmission on 1–20 MHz interfaces (SIM clock, audio codecs) without edge rounding or jitter |
| Bidirectional Configuration Option | Supports four ±5 V channels using Pin 5 as ground - cuts effective capacitance nearly in half for ultra-high-speed lines |
| Industrial Temp Range | Validated operation from –40°C to 125°C - suitable for under-hood modules, ruggedized tablets, and wearable charging circuits |
| Robust Surge Handling | Withstands 40 W (8/20 µs) surges - exceeds IEC 61000-4-5 requirements for consumer electronics interfaces |
Applications
| Smartphone SIM Card Interface | Wearable Audio Line Protection |
|---|---|
Use Scenario: Protecting 3.3-V/5-V SIM card interface (CLK, I/O, RST, VPP) against user-handling ESD in compact handsets. IC Role / Device Role / Timing Role: Unidirectional clamping diode array placed between connector and baseband processor GPIOs. Use Value: Prevents latch-up or damage to SIM controller during ±15-kV contact discharge while maintaining <1-ns response time and <7-pF loading. |
Use Scenario: Shielding microphone, earphone, and speakerphone lines in fitness trackers and smartwatches from repeated ESD events. IC Role / Device Role / Timing Role: Bidirectional ESD clamp (Pins 1,3,4,6 → I/O; Pin 5 → GND) on ±5-V analog audio paths. Use Value: Reduces I/O capacitance to ~5 pF, preserving wideband audio fidelity (20 Hz–20 kHz) and enabling direct coupling without DC-blocking caps. |
| Tablet Keypad & GPIO Protection | Remote Controller Button Matrix |
Use Scenario: Securing mechanical push-button inputs and general-purpose I/Os on Android tablets exposed to frequent handling. IC Role / Device Role / Timing Role: Five-channel unidirectional protector tied to each button trace and GPIO header pin. Use Value: Maintains <100-nA leakage at 5 V - avoids false triggering in high-impedance pull-up networks and extends battery life. |
Use Scenario: Guarding IR receiver, LED backlight, and tactile button lines in infrared remote controls subjected to static-prone plastic housings. IC Role / Device Role / Timing Role: Compact DPF-packaged ESD array mounted directly at PCB edge near connector. Use Value: 1.0 mm × 1.0 mm footprint allows placement within 2 mm of interface - minimizing inductance and ensuring sub-100-ps clamping latency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5Z5.0T1G | Single-channel, 5.0-V VRWM, 12-pF CIO, SOD-523 package | Requires five discrete units; higher total capacitance and larger board area than TPD5E003DPFR | Use only when multi-channel integration is not required or board layout prohibits DPF placement. |
| TPD4E001DPVR | Four-channel, same X2SON (DPF) package, 6.5-V VBR, 5.5-pF CIO | Lacks fifth channel; lower clamping voltage (16 V max @ 10 A) but tighter capacitance spec | Select when protecting exactly four lines (e.g., USB D+/D−, I²C SDA/SCL) where minimal capacitance is critical. |
Compared with ESD5Z5.0T1G, TPD5E003DPFR reduces component count and parasitic inductance via monolithic integration; compared with TPD4E001DPVR, it adds a fifth channel at modest capacitance trade-off - making it optimal for SIM/audio + keypad consolidation in handhelds.
Availability
TPD5E003DPFR is available at Aetrix Electronics and suitable for smartphone SIM interfaces, wearable audio subsystems, and tablet keypad protection requiring stable component supply and full production traceability.
Supply support for TPD5E003DPFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and high-reliability components for industrial, automotive, and consumer systems.
The TPD5E003DPFR belongs to TI's system-level ESD protection portfolio, engineered specifically for space-constrained portable electronics requiring certified ±15-kV IEC immunity without compromising signal bandwidth or thermal performance.
FAQ
What is the maximum operating voltage for TPD5E003DPFR?
The TPD5E003DPFR has a reverse stand-off voltage (VRWM) of 5 V minimum and is rated for continuous operation at 0–5 V on all I/O pins relative to Pin 2 (GND). Absolute maximum I/O voltage is 5.5 V per the datasheet's Absolute Maximum Ratings table - exceeding this risks permanent damage. The TPD5E003DPFR must never be biased beyond its specified operating range during normal or transient conditions.
Can TPD5E003DPFR be used in bidirectional signal paths like USB or I²C?
Yes - the TPD5E003DPFR supports bidirectional operation by assigning Pin 5 as a dedicated ground and connecting Pins 1, 3, 4, and 6 to ±5-V tolerant signal lines. In this configuration, each channel exhibits lower capacitance (~5 pF) and higher dynamic resistance, making it suitable for bidirectional interfaces such as I²C or low-speed USB data lines - though it is not rated for USB 2.0 high-speed signaling due to inherent capacitance limits. The TPD5E003DPFR does not support true differential signaling or bus termination.
How does TPD5E003DPFR compare to discrete ESD diodes in layout sensitivity?
The TPD5E003DPFR significantly reduces layout sensitivity versus five discrete SOD-523 or SC-70 diodes: its integrated X2SON (DPF) package eliminates inter-diode trace inductance, ensures matched clamping characteristics across all five channels, and allows placement within 1 mm of the connector. Discrete solutions introduce variable path lengths and ground bounce - degrading ESD response consistency. The TPD5E003DPFR's single-exposed-pad thermal path also improves heat dissipation during surge events compared to individual packages.
What is the recommended PCB layout practice for TPD5E003DPFR?
TI recommends placing the TPD5E003DPFR as close as possible to the protected interface - ideally within 2 mm of the connector - with short, straight, and wide traces between the device and I/O lines. Ground connections must use multiple vias to an internal ground plane, and the exposed thermal pad (Pin 2) must be soldered directly to a solid copper pour. Avoid stubs, right-angle bends, or parallel routing of unprotected traces near protected ones to prevent EMI coupling during ESD events. The TPD5E003DPFR layout guidelines are documented in Section 10 of its datasheet (SLVSBQ6B).
Does TPD5E003DPFR require external biasing or power supply connections?
No - the TPD5E003DPFR is a passive TVS diode array with no active circuitry. It requires no power supply, control signals, or biasing. All functionality arises from the intrinsic PN junction behavior of its five integrated silicon avalanche diodes. Pins 1, 3, 4, 5, and 6 connect directly to protected signal lines; Pin 2 connects exclusively to system ground. The TPD5E003DPFR remains fully functional with zero quiescent current draw and no startup sequence.
TPD5E003DPFR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Package/Case:
- 6-XFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- 4
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- 19.5V
- Current - Peak Pulse (10/1000µs):
- 3A (8/20µs)
- Power - Peak Pulse:
- 40W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 10pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-X2SON (1x1)
TPD5E003DPFR FAQ
1.How can I place an order for TPD5E003DPFR through Aetrix?
Please submit a Request for Quotation (RFQ) for TPD5E003DPFR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPD5E003DPFR reliable?
The price and inventory of TPD5E003DPFR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPD5E003DPFR is usually 5 days.
3.What payment methods are accepted for TPD5E003DPFR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPD5E003DPFR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPD5E003DPFR?
TPD5E003DPFR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPD5E003DPFR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPD5E003DPFR?
For technical support, including TPD5E003DPFR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPD5E003DPFR requirements.
6.How does Aetrix verify that TPD5E003DPFR is sourced from the original manufacturer or authorized distributors?
All TPD5E003DPFR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPD5E003DPFR meets industry standards.
7.What is the process for return or replacement of TPD5E003DPFR?
All TPD5E003DPFR units undergo pre-shipment inspection (PSI). If there is an issue with TPD5E003DPFR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPD5E003DPFR part is unused and in its original packaging.
Return procedure for TPD5E003DPFR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPD5E003DPFR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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