Vishay General Semiconductor - Diodes Division TPSMA6.8HE3_A/I
- Part No.:
- TPSMA6.8HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
TPSMA6.8HE3_A/I.pdf
- Description:
- TVS DIODE 5.5VWM 10.8VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:5,478
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPSMA6.8HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features 6.8 V nominal breakdown voltage (VBR), 400 W peak pulse power (10/1000 µs), 38.1 V maximum clamping voltage at 38.1 A peak pulse current, 5.8 V stand-off voltage (VWM), and operates up to +185 °C junction temperature - used in automotive sensor line protection and industrial power rail surge suppression.
For engineers reviewing the TPSMA6.8HE3_A/I datasheet, TPSMA6.8HE3_A/I pinout, TPSMA6.8HE3_A/I application, or TPSMA6.8HE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, MSL Level 1 moisture sensitivity, 10.5 %/°C typical VBR temperature coefficient, and compatibility with reflow profiles peaking at 260 °C.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology to deliver stable clamping under repetitive surge conditions. Its 185 °C maximum junction temperature rating supports operation in high-temperature automotive engine compartments and industrial motor drive environments.
The device meets J-STD-020 MSL Level 1 and JESD201 Class 2 whisker resistance requirements, with matte tin-plated leads and UL 94 V-0 molding compound - confirming suitability for automated SMT assembly and long-term reliability in harsh thermal cycling applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 6.45 / 6.80 / 7.14 V - ensures reliable triggering above 5.8 V system operating voltage while avoiding false trips during normal operation |
| VWM | 5.8 V - maximum continuous reverse voltage before leakage exceeds 300 µA, matching 5 V logic and USB power rail systems |
| VC @ IPPM | 38.1 V - clamps 10/1000 µs surges up to 400 W without exceeding safe stress limits for downstream 3.3 V or 5 V ICs |
| PPPM | 400 W - sustains single-pulse transients from inductive switching or ESD events per IEC 61000-4-5 Level 3 |
| TJ max. | +185 °C - enables use in under-hood automotive modules and industrial inverters without derating below ambient 125 °C |
| αT | 0.047 %/°C - low temperature coefficient minimizes VBR drift across wide temperature ranges, critical for precision sensor interfaces |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, cathode indicated by color band. Dimensions: 4.93 mm × 3.99 mm × 2.29 mm (L × W × H), with 5.0 mm × 5.0 mm copper pad layout recommended for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to ground or lower-potential node in unidirectional TVS configuration; enables low VF (3.5 V @ 25 A) during surge conduction |
| Cathode | Current exit point during forward conduction; clamping node during reverse surge | Connected to protected line (e.g., CAN_H, 5 V rail); defines polarity and determines clamping threshold relative to VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, mechanical shock, and humidity testing - required for ECUs and ADAS sensor modules |
| MSL Level 1, 260 °C peak reflow | Compatible with standard lead-free reflow profiles without preconditioning - eliminates moisture-related popcorning risk |
| 400 W peak pulse power (10/1000 µs) | Withstands IEC 61000-4-5 combination wave surges up to 1 kV/500 A without degradation |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (<1 ns rise time), improving protection margin for high-speed interfaces |
| 185 °C junction rating | Supports operation in engine control units and industrial drives where ambient temperatures exceed 105 °C |
Applications
| Automotive Sensor Protection | Industrial Power Rail Clamping |
|---|---|
Use Scenario: Protecting LIN bus and analog sensor outputs (e.g., pressure, temperature) in engine control modules from load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and ground to clamp negative-going transients and limit positive excursions to ≤38.1 V. Use Value: Prevents latch-up or gate oxide damage in 3.3 V microcontrollers interfacing with sensors, enabled by 5.8 V VWM and 6.8 V VBR. | Use Scenario: Suppressing inductive kickback on 12 V/24 V DC power rails feeding motor drivers and solenoid controllers in factory automation systems. IC Role / Device Role / Timing Role: Parallel-connected TVS absorbing energy from relay coil de-energization and contact arcing events. Use Value: Limits rail voltage spikes to 38.1 V, protecting MOSFET gate drivers and PWM controllers rated for 40 V absolute maximum. |
| USB Port ESD Protection | Telecom Line Surge Suppression |
Use Scenario: Safeguarding USB 2.0 data lines (D+/D−) and VBUS against human-body-model (HBM) ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS placed on VBUS line only (not data lines), leveraging 5.8 V VWM to avoid interfering with 5 V USB regulation. Use Value: Clamps 8 kV contact ESD pulses within 1 ns while maintaining <300 µA leakage at 5 V - preserving USB suspend current budgets. | Use Scenario: Shielding RS-485 transceivers and Ethernet PHYs in base station equipment from lightning-induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Primary-level TVS on power input and secondary-level on signal lines, coordinated with GDTs and MOVs in multi-stage protection schemes. Use Value: Withstands 400 W surges per IEC 61000-4-5 Ed.3, enabling compliance with GR-1089-CORE telecom immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.8A | Same SMA package, 600 W PPPM, higher VC = 11.5 V @ 33.5 A, non-AEC-Q101 | Higher power handling but no automotive qualification; less suitable for under-hood deployment | Select when higher surge margin is needed and AEC-Q101 is not required |
| 1.5SMC6.8A | DO-214AB (SMC) package, 1500 W PPPM, larger footprint (7.11 mm × 6.22 mm), VC = 11.2 V @ 133 A | Designed for board-level primary protection; incompatible with space-constrained layouts requiring SMA | Choose for front-end AC/DC input protection where PCB area permits larger package |
Compared with SMAJ6.8A and 1.5SMC6.8A, the TPSMA6.8HE3_A/I offers AEC-Q101 qualification and tighter thermal design margin (185 °C TJ) in the compact SMA footprint - making it optimal for automotive and high-density industrial designs where qualification and size are decisive.
Availability
TPSMA6.8HE3_A/I is available at Aetrix Electronics and suitable for automotive sensor modules, industrial motor drives, and telecom infrastructure equipment requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for TPSMA6.8HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and high-temperature performance.
The TPSMA6.8HE3_A/I belongs to Vishay's PAR® (Protection Against Transients) family of transient voltage suppressors, engineered specifically for robust surge immunity in automotive, industrial, and telecommunications applications demanding AEC-Q101 compliance and extended temperature operation.
FAQ
What is the polarity configuration of the TPSMA6.8HE3_A/I?
The TPSMA6.8HE3_A/I is a unidirectional TVS diode, meaning it conducts only in the reverse direction when voltage exceeds its breakdown threshold. The cathode is marked by a color band on the SMA package body. This configuration provides precise clamping on positive transients while blocking normal forward-biased operation - essential for protecting 5 V power rails and sensor outputs where bidirectional clamping is unnecessary.
Is the TPSMA6.8HE3_A/I qualified to AEC-Q101 standards?
Yes, the TPSMA6.8HE3_A/I carries AEC-Q101 qualification, confirmed by Vishay's documentation and ordering code suffix "HE3". This qualification covers stress tests including temperature cycling, high-temperature operating life, and mechanical shock - validating its suitability for automotive electronic control units, ADAS sensors, and infotainment systems deployed in vehicles.
What is the maximum clamping voltage of the TPSMA6.8HE3_A/I at its rated peak pulse current?
The TPSMA6.8HE3_A/I has a maximum clamping voltage (VC) of 38.1 V at its rated peak pulse current (IPPM) of 38.1 A, measured using the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuits during surge events - ensuring downstream 3.3 V or 5 V ICs remain within safe operating margins even under worst-case transient conditions.
Does the TPSMA6.8HE3_A/I meet moisture sensitivity level (MSL) requirements for lead-free reflow?
Yes, the TPSMA6.8HE3_A/I is rated MSL Level 1 per J-STD-020, with a maximum peak reflow temperature of 260 °C. This allows direct placement into standard lead-free reflow ovens without baking or dry-pack requirements - simplifying manufacturing flow and reducing risk of moisture-induced defects such as popcorn cracking during soldering.
How does the temperature coefficient of VBR affect performance of the TPSMA6.8HE3_A/I in automotive applications?
The TPSMA6.8HE3_A/I exhibits a typical VBR temperature coefficient (αT) of 0.047 %/°C, meaning its breakdown voltage increases slightly with rising junction temperature. At +125 °C ambient (with self-heating), VBR rises ~4.7 % - still well within the 6.45–7.14 V specification range. This stability ensures consistent clamping behavior across the full -65 °C to +185 °C operating range required in automotive under-hood environments.
TPSMA6.8HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V
- Voltage - Breakdown (Min):
- 6.12V
- Voltage - Clamping (Max) @ Ipp:
- 10.8V
- Current - Peak Pulse (10/1000µs):
- 37A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
TPSMA6.8HE3_A/I FAQ
1.How can I place an order for TPSMA6.8HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMA6.8HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMA6.8HE3_A/I reliable?
The price and inventory of TPSMA6.8HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMA6.8HE3_A/I is usually 5 days.
3.What payment methods are accepted for TPSMA6.8HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMA6.8HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMA6.8HE3_A/I?
TPSMA6.8HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMA6.8HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMA6.8HE3_A/I?
For technical support, including TPSMA6.8HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMA6.8HE3_A/I requirements.
6.How does Aetrix verify that TPSMA6.8HE3_A/I is sourced from the original manufacturer or authorized distributors?
All TPSMA6.8HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMA6.8HE3_A/I meets industry standards.
7.What is the process for return or replacement of TPSMA6.8HE3_A/I?
All TPSMA6.8HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMA6.8HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMA6.8HE3_A/I part is unused and in its original packaging.
Return procedure for TPSMA6.8HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMA6.8HE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

