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Vishay General Semiconductor - Diodes Division TPSMB18AHE3_A/H
- Part No.:
- TPSMB18AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB18AHE3_A/H.pdf
- Description:
- TVS DIODE 15.3VWM 25.2VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
TPSMB18AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features a 18.0 V nominal breakdown voltage (VBR), 15.3 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), 23.8 A peak pulse current (IPPM), and 25.2 V maximum clamping voltage (VC) - deployed in automotive engine control units, industrial sensor interfaces, and telecom power supply protection.
For engineers reviewing the TPSMB18AHE3_A/H datasheet, TPSMB18AHE3_A/H pinout, TPSMB18AHE3_A/H application, or TPSMB18AHE3_A/H equivalent, this page delivers verified electrical parameters, SMB (DO-214AA) package mapping, AEC-Q101 qualification status, thermal derating behavior, and real-world clamping performance under repetitive surge conditions.
Technical Context
This TVS diode operates as a unidirectional clamping device with junction passivated anisotropic rectifier technology, enabling stable operation up to 185 °C junction temperature. Its low incremental surge resistance and fast response time ensure effective suppression of sub-microsecond transients without latch-up or thermal runaway.
The device is rated for 75 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits a +0.080 %/°C temperature coefficient of VBR, allowing predictable voltage shift across automotive and industrial temperature ranges. It meets MSL Level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive under-hood applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 17.1 / 18.0 / 18.9 V at 1 mA - defines precise clamping onset threshold under controlled test conditions |
| VWM | 15.3 V - maximum continuous reverse working voltage before leakage exceeds 1 µA |
| VC @ IPPM | 25.2 V at 23.8 A (10/1000 µs) - actual worst-case clamped voltage seen by protected circuit during surge |
| PPPM | 600 W - peak transient energy absorption capability under standardized waveform, critical for IEC 61000-4-5 compliance margin |
| TJ max | +185 °C - enables use in high-temperature environments such as engine compartments and industrial motor drives |
| IR @ VWM | ≤1 µA at 25 °C - ensures negligible standby power loss and signal integrity on low-current sensor lines |
| AEC-Q101 | Qualified - validated for automotive reliability including HTOL, TC, HAST, and bond strength per stress test plan |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HE3 suffix), MSL Level 1, 260 °C reflow peak.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode of internal PN junction | Connected to protected line (e.g., 12 V rail); absorbs positive transients when referenced to ground |
| Anode | Cathode of internal PN junction | Connected to system ground; completes clamping path during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivated anisotropic rectifier | Enables stable VBR drift < ±5 % over 1000 hrs at 150 °C, critical for long-life automotive modules |
| 185 °C junction rating | Supports placement near heat sources (e.g., power MOSFETs, DC-DC converters) without derating penalties |
| 600 W peak pulse power (10/1000 µs) | Meets Level 4 IEC 61000-4-5 surge immunity (4 kV line-to-ground) with margin in compact SMB footprint |
| Low clamping ratio (VC/VBR = 1.40) | Minimizes overvoltage stress on downstream ICs such as microcontrollers and CAN transceivers |
| AEC-Q101 qualification (HE3 suffix) | Validates robustness against mechanical shock, temperature cycling, and humidity exposure per automotive standards |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Suppressing load-dump spikes (up to 35 V, 100 ms) and alternator ripple on 12 V battery-fed ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and LDO input to clamp transients before regulation. Use Value: Limits voltage to ≤25.2 V during 23.8 A surge, preventing damage to 3.3 V/5 V logic supplies and MCU I/O. |
Use Scenario: Protecting 4–20 mA current-loop sensor outputs from ESD and field wiring transients in factory automation. IC Role / Device Role / Timing Role: TVS connected across sensor output and ground to shunt fast transients (<1 ns rise) before op-amp input stage. Use Value: Leakage <1 µA at 15.3 V ensures no impact on loop accuracy; 25.2 V clamping preserves analog front-end integrity. |
| Telecom DC Power Input Protection | Consumer Device USB Power Line Clamping |
Use Scenario: Guarding -48 V DC telecom power inputs against lightning-induced surges on outdoor base station equipment. IC Role / Device Role / Timing Role: Primary clamping device upstream of DC-DC converter, sized for 600 W single-event dissipation. Use Value: Withstands 75 A 8.3 ms surge (IEC 61000-4-5) and maintains VC ≤25.2 V to protect downstream POL regulators. |
Use Scenario: Mitigating ESD and hot-swap overshoot on 5 V USB VBUS lines in portable audio and IoT hubs. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ ≈ 200 pF typical) placed directly at USB connector to limit ESD to <25.2 V. Use Value: Fast response (<1 ns) and 1 µA leakage preserve USB 2.0 signal integrity while meeting IEC 61000-4-2 Level 4 (15 kV air). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A (onsemi) | Same VBR range (17.1–18.9 V), but lower PPPM = 400 W; SMB package, non-AEC-Q101 | Limited to commercial/industrial use; not qualified for automotive under-hood deployment | Select SMAJ18A only for cost-sensitive non-automotive designs where 400 W surge margin suffices |
| SMCJ18A (Littelfuse) | Higher PPPM = 1500 W, same VBR, but larger SMC (DO-214AB) package (4.5 × 3.9 mm vs. SMB's 3.9 × 2.2 mm) | Requires PCB layout change; suitable where higher surge endurance is mandatory (e.g., EV charging stations) | Choose SMCJ18A when system-level surge testing exceeds 600 W or when extended thermal mass improves reliability |
Compared with SMAJ18A and SMCJ18A, the TPSMB18AHE3_A/H uniquely balances AEC-Q101 qualification, 600 W capability, and SMB footprint - making it optimal for space-constrained automotive modules requiring production-grade reliability without board redesign.
Availability
TPSMB18AHE3_A/H is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor interface hardening, and telecom DC input surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for TPSMB18AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial and automotive applications.
The TPSMB series belongs to Vishay's PAR® (Protected Anisotropic Rectifier) TVS platform, engineered specifically for high-temperature stability and AEC-Q101 compliance in automotive power and signal protection.
FAQ
What is the maximum clamping voltage of the TPSMB18AHE3_A/H under a 10/1000 µs surge?
The TPSMB18AHE3_A/H has a maximum clamping voltage (VC) of 25.2 V when subjected to its rated peak pulse current of 23.8 A using the standard 10/1000 µs waveform. This value is measured per JEDEC test conditions and represents the worst-case voltage imposed on the protected circuit during transient events - a key parameter for ensuring downstream ICs remain within absolute maximum ratings. The TPSMB18AHE3_A/H achieves this with minimal voltage overshoot due to its low dynamic impedance.
Is the TPSMB18AHE3_A/H qualified for automotive applications?
Yes, the TPSMB18AHE3_A/H is explicitly AEC-Q101 qualified, as confirmed by Vishay's documentation and ordering code suffix "HE3". This qualification covers stress tests including high-temperature operating life (HTOL), temperature cycling, and unbiased highly accelerated stress testing (uHAST), validating its suitability for under-hood and chassis-mounted automotive systems. The TPSMB18AHE3_A/H also supports MSL Level 1 handling and 260 °C reflow compatibility.
What does the "HE3" suffix indicate in TPSMB18AHE3_A/H?
The "HE3" suffix in TPSMB18AHE3_A/H denotes a RoHS-compliant, AEC-Q101-qualified version with matte tin-plated leads that meet JESD 201 Class 2 whisker resistance requirements. It distinguishes this variant from non-automotive versions (e.g., base TPSMB18A) and confirms compliance with automotive reliability and material standards. The "_A/H" further specifies packaging: 7" tape-and-reel, 750 units per reel - a detail critical for SMT line planning and inventory control of the TPSMB18AHE3_A/H.
How does the TPSMB18AHE3_A/H perform at elevated junction temperatures?
The TPSMB18AHE3_A/H maintains specified performance up to +185 °C junction temperature, with VBR shifting predictably at +0.080 %/°C. Derating curves in the datasheet show that at 125 °C ambient (with appropriate PCB copper area), its peak pulse power remains >400 W - sufficient for most automotive transients. This thermal stability eliminates need for additional heatsinking in typical SMB layouts, simplifying design for the TPSMB18AHE3_A/H in high-temperature zones.
Can the TPSMB18AHE3_A/H replace older SMB-format TVS diodes like P6SMB18A?
The TPSMB18AHE3_A/H is not a direct drop-in replacement for P6SMB18A due to differences in clamping performance and qualification: TPSMB18AHE3_A/H offers tighter VBR tolerance (±5 % vs. ±10 %), lower VC (25.2 V vs. ~27.7 V), and AEC-Q101 qualification - whereas P6SMB18A is commercial-grade only. While both share SMB (DO-214AA) package and pinout, system-level validation is required before substituting the TPSMB18AHE3_A/H into legacy designs originally qualified with P6SMB18A.
TPSMB18AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15.3V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.2V
- Current - Peak Pulse (10/1000µs):
- 23.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB18AHE3_A/H FAQ
1.How can I place an order for TPSMB18AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB18AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB18AHE3_A/H reliable?
The price and inventory of TPSMB18AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB18AHE3_A/H is usually 5 days.
3.What payment methods are accepted for TPSMB18AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB18AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB18AHE3_A/H?
TPSMB18AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB18AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB18AHE3_A/H?
For technical support, including TPSMB18AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB18AHE3_A/H requirements.
6.How does Aetrix verify that TPSMB18AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All TPSMB18AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB18AHE3_A/H meets industry standards.
7.What is the process for return or replacement of TPSMB18AHE3_A/H?
All TPSMB18AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB18AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB18AHE3_A/H part is unused and in its original packaging.
Return procedure for TPSMB18AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB18AHE3_A/H Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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