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Vishay General Semiconductor - Diodes Division TPSMB7.5AHE3_A/I
- Part No.:
- TPSMB7.5AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB7.5AHE3_A/I.pdf
- Description:
- TVS DIODE 6.4VWM 11.3VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,227
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Product details
Overview
TPSMB7.5AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) diode designed for clamping inductive switching transients and lightning-induced surges on power rails and signal lines. It features a 7.5 V nominal breakdown voltage (VBR), 6.4 V maximum working voltage (VWM), 600 W peak pulse power (10/1000 µs), 11.3 V maximum clamping voltage at 53.1 A, and operates up to +185 °C junction temperature - deployed in automotive sensor protection and industrial power supply input stages.
For engineers reviewing the TPSMB7.5AHE3_A/I datasheet, TPSMB7.5AHE3_A/I pinout, TPSMB7.5AHE3_A/I application, or TPSMB7.5AHE3_A/I equivalent, key selection criteria include unidirectional polarity, SMB (DO-214AA) package compatibility, AEC-Q101 qualification status, TJ = 185 °C thermal rating, and clamping performance under repetitive 10/1000 µs surge conditions.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to deliver stable breakdown characteristics across temperature and high reliability under automotive-grade thermal stress. Its 185 °C maximum junction temperature and MSL Level 1 rating support reflow soldering at 260 °C peak and long-term operation in engine bay or industrial control environments.
The device exhibits low incremental surge resistance and fast response time (<1 ns), enabling effective suppression of sub-microsecond transients before sensitive downstream ICs or MOSFETs are damaged. Clamping occurs at 11.3 V when subjected to its rated 53.1 A peak pulse current (IPPM), with <0.052 %/°C temperature coefficient of VBR.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 7.13–7.88 V at 10 mA - defines precise clamping onset threshold for overvoltage detection |
| Working Voltage (VWM) | 6.4 V max - ensures no conduction during normal 5 V or 6.3 V rail operation |
| Clamping Voltage (VC) | 11.3 V at 53.1 A IPPM - limits transient voltage seen by protected circuitry |
| Peak Pulse Power (PPPM) | 600 W (10/1000 µs) - sustains high-energy surges without failure |
| Junction Temperature Range | −65 °C to +185 °C - supports under-hood automotive and industrial ambient extremes |
| Surge Current (IPPM) | 53.1 A (10/1000 µs) - quantifies maximum transient energy absorption per event |
| Polarity & Package | Unidirectional / SMB (DO-214AA) - enables compact PCB layout with cathode band identification |
Pinout & Package
SMB (DO-214AA) surface-mount package with matte tin-plated leads, 0.220" × 0.130" footprint, MSL Level 1 moisture sensitivity, and cathode indicated by molded band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to lower-potential side (e.g., GND or return path) in unidirectional TVS configuration |
| Cathode | Current exit terminal during reverse-biased clamping | Connected to protected line (e.g., 5 V rail or CAN_H); color band marks this end |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTGB, HTRB, and temperature cycling |
| TJ = 185 °C capability | Enables reliable operation in high-ambient environments such as powertrain and ADAS modules |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) without degradation |
| Low clamping ratio (VC/VBR ≈ 1.5) | Minimizes overvoltage margin between trigger and clamp, reducing stress on downstream components |
| MSL Level 1, 260 °C peak reflow | Compatible with standard lead-free SMT assembly processes without pre-baking |
Applications
| Automotive Sensor Protection | Industrial Power Input Stage |
|---|---|
Use Scenario: Protecting LIN bus transceivers and temperature sensors in engine control units exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor VDD and GND to clamp positive-going transients before they reach the IC's ESD structure. Use Value: Prevents latch-up or permanent damage to 5 V analog front-end ICs while maintaining signal integrity during ISO 7637-2 Pulse 5a events. |
Use Scenario: Safeguarding 24 V DC input rails of PLC I/O modules against inductive kickback from solenoid drivers and relay coils. IC Role / Device Role / Timing Role: Standoff clamping element absorbing >600 W surge energy within microseconds to limit rail collapse and prevent brownout resets. Use Value: Enables robust field deployment without external crowbar circuits or redundant fusing, reducing BOM count and board area. |
| Consumer USB Port ESD Suppression | Telecom Line Interface Protection |
Use Scenario: Secondary-level surge protection on USB VBUS lines in smart home hubs where primary protection resides upstream. IC Role / Device Role / Timing Role: Fast-response shunt device triggered after initial ESD event exceeds 6.4 V, diverting current away from USB controller PHY. Use Value: Adds redundancy to IEC 61000-4-2 Level 4 (15 kV air/8 kV contact) immunity without compromising data rate or insertion loss. |
Use Scenario: Protecting RS-485 transceiver inputs in base station backhaul equipment subjected to lightning-induced common-mode surges on twisted-pair lines. IC Role / Device Role / Timing Role: Paired unidirectional TVS devices (one per line) referenced to local ground, clamping differential and common-mode transients simultaneously. Use Value: Maintains signal fidelity up to 10 Mbps while surviving repeated 10/1000 µs surges per ITU-T K.21 recommendations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ7.5A | Same SMB package, 7.5 V VBR, but only 400 W PPPM and non-AEC-Q101 rated | Limited to commercial-grade consumer or office equipment; not qualified for automotive use | Select when cost sensitivity outweighs automotive qualification and 600 W surge headroom is unnecessary |
| TPSMB7.5AHM3_A/I | Identical electrical specs and AEC-Q101 qualification, but halogen-free molding compound and JESD201 Class 2 whisker resistance | Required for RoHS-compliant, halogen-free manufacturing programs (e.g., EU automotive Tier 1s) | Choose when material compliance mandates exceed standard RoHS; otherwise TPSMB7.5AHE3_A/I suffices |
Compared with SMAJ7.5A and TPSMB7.5AHM3_A/I, the TPSMB7.5AHE3_A/I provides optimal balance of automotive qualification, 600 W surge capacity, and standard RoHS compliance - making it the default choice for volume automotive and industrial designs where halogen-free is not mandated.
Availability
TPSMB7.5AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor protection, industrial power input stage hardening, and telecom line interface surge suppression requiring stable component supply across multi-year production cycles.
Supply support for TPSMB7.5AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial and automotive applications.
The TPSMB series belongs to Vishay's PAR® TVS platform, engineered specifically for high-temperature stability and repeatable surge clamping in harsh-environment electronics - targeting AEC-Q101-compliant automotive subsystems and ruggedized industrial controls.
FAQ
What is the maximum clamping voltage of the TPSMB7.5AHE3_A/I under rated surge conditions?
The TPSMB7.5AHE3_A/I has a maximum clamping voltage (VC) of 11.3 V when subjected to its rated peak pulse current of 53.1 A using the 10/1000 µs waveform. This value is measured per JEDEC standards and guarantees that downstream circuitry sees no more than 11.3 V during a full-power transient event. The clamping performance is validated across −65 °C to +185 °C operating range and remains stable due to the device's low temperature coefficient of 0.052 %/°C.
Is the TPSMB7.5AHE3_A/I qualified for automotive applications?
Yes, the TPSMB7.5AHE3_A/I is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, and unbiased highly accelerated stress testing (uHAST). Its 185 °C maximum junction temperature and MSL Level 1 rating further confirm suitability for under-hood and ADAS applications. The "HE3" suffix explicitly denotes the AEC-Q101 qualified version per Vishay's ordering nomenclature.
What does the "_A/I" suffix mean in TPSMB7.5AHE3_A/I?
The "_A/I" suffix in TPSMB7.5AHE3_A/I indicates two attributes: "A" is the revision code denoting the current design iteration per Vishay's document control, and "I" specifies the packaging format - 13-inch diameter plastic tape and reel containing 3200 units. This contrasts with "H", which denotes 7-inch reels of 750 units. Both formats use the same die and meet identical electrical and reliability specifications.
How does the TPSMB7.5AHE3_A/I compare to bidirectional TVS diodes in surge protection?
The TPSMB7.5AHE3_A/I is unidirectional and optimized for clamping positive transients on DC rails or single-ended signal lines referenced to ground. Unlike bidirectional TVS diodes, it does not protect against negative-going surges - making it inappropriate for AC-coupled or floating lines. However, it offers superior leakage performance (<250 µA at VWM) and tighter VBR tolerance versus bidirectional equivalents, which is critical for low-power sensor interfaces where standby current matters.
Can the TPSMB7.5AHE3_A/I be used in parallel to increase surge current handling?
No, the TPSMB7.5AHE3_A/I should not be paralleled without external balancing resistors, as minor VBR mismatches (±0.75 V across units) cause current hogging and premature failure of one device. Vishay does not characterize or recommend parallel operation for the TPSMB series. For higher surge ratings, select a higher-power TVS like the 1500 W TPSP15A series or verify derating curves in Figure 2 of the datasheet for safe single-device operation.
TPSMB7.5AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.4V
- Voltage - Breakdown (Min):
- 7.13V
- Voltage - Clamping (Max) @ Ipp:
- 11.3V
- Current - Peak Pulse (10/1000µs):
- 53.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB7.5AHE3_A/I FAQ
1.How can I place an order for TPSMB7.5AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB7.5AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB7.5AHE3_A/I reliable?
The price and inventory of TPSMB7.5AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB7.5AHE3_A/I is usually 5 days.
3.What payment methods are accepted for TPSMB7.5AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB7.5AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB7.5AHE3_A/I?
TPSMB7.5AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB7.5AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB7.5AHE3_A/I?
For technical support, including TPSMB7.5AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB7.5AHE3_A/I requirements.
6.How does Aetrix verify that TPSMB7.5AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All TPSMB7.5AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB7.5AHE3_A/I meets industry standards.
7.What is the process for return or replacement of TPSMB7.5AHE3_A/I?
All TPSMB7.5AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB7.5AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB7.5AHE3_A/I part is unused and in its original packaging.
Return procedure for TPSMB7.5AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB7.5AHE3_A/I Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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