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Microchip Technology UM4006B

Part No.:
UM4006B
Manufacturer:
Microchip Technology
Category:
RF Diodes
Package:
Axial
Datasheet:
AetrixUM4006B.pdf
Description:
SI PPIN HERMETIC GLASS AXIAL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,789

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Product details

Overview

UM4006B from Microsemi is a high-power RF PIN diode designed for low-distortion switching and attenuation in HF–S-band systems. It features 1000 V reverse voltage rating, 0.5 Ω typical series resistance at 100 MHz/100 mA, >5 µs carrier lifetime, and 3 pF capacitance at 100 V/1 MHz - enabling precise RF power control in antenna selectors and UHF phase shifters.

For engineers reviewing the UM4006B datasheet, UM4006B pinout, UM4006B application, or UM4006B equivalent, key selection criteria include reverse voltage capability, thermal resistance under stud-mount conditions, RF series resistance vs. bias current, carrier lifetime impact on switching speed, and compatibility with automatic insertion equipment.

Technical Context

The UM4006B operates as a voltage-controlled RF resistor in forward-biased switching and high-impedance blocking element in reverse bias. Its thick intrinsic (I) region and long carrier lifetime (>5 µs) support stable conduction under high peak RF voltages exceeding applied DC reverse bias - critical for megawatt-class duplexers.

Thermally, it uses a stud-mounted "Style B" package with 6 °C/W thermal resistance at 25 °C stud temperature, enabling 25 W continuous power dissipation. Electrical equivalence to UM4906 is confirmed, but UM4006B uses longer thermal path than UM4906, resulting in lower max PD under identical mounting conditions.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage1000 V - supports operation in high-voltage RF switch legs without breakdown at HF–S-band frequencies
Series Resistance0.5 Ω typ. @ 100 mA / 100 MHz - determines insertion loss and power handling in forward-biased RF paths
Capacitance3 pF max. @ 100 V / 1 MHz - defines off-state impedance and tuning range in filter/cavity networks
Carrier Lifetime>5 µs - enables efficient RF control with low bias current while maintaining fast enough switching for phase shifter duty cycles
Power Dissipation25 W @ 25 °C stud temp - sets maximum continuous RF + DC power handling under specified thermal mounting
Parallel Resistance15 kΩ min. @ 100 V / 100 MHz - ensures high isolation in reverse-biased attenuator or switch branches
Forward Voltage1.0 V @ 100 mA - defines DC bias circuit voltage drop and heat generation during active conduction

Pinout & Package

UM4006B uses Microsemi's "Style B" stud-mounted metal-ceramic package with anode and cathode terminals isolated via insulated stud mount. The package provides direct thermal path to heatsink and mechanical stability for high-vibration RF environments.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to positive bias supply; must be thermally anchored to heatsink via stud
CathodeForward current exit / RF return pathRF signal reference node; low-inductance connection required for S-band performance
Stud MountThermal and mechanical interfaceElectrically isolated from both terminals; provides primary heat conduction path to chassis

Key Features

FeatureDesign Value
Non-cavity constructionEliminates parasitic resonances above 3 GHz, supporting broadband S-band operation without spurious modes
Low capacitance at 0 V bias3 pF enables high off-state impedance up to 1 GHz, minimizing signal leakage in RF switches
Thermally matched configurationStud-mount geometry ensures consistent thermal expansion with aluminum heatsinks, reducing mechanical stress during thermal cycling
Compatible with automatic insertionStandardized Style B footprint allows pick-and-place integration into automated microwave module assembly lines
RoHS-compliant option availableUMX4006B variant uses matte tin finish, meeting EU Directive 2002/95/EC without compromising RF performance

Applications

Antenna Selector SwitchingUHF Phase Shifter

Use Scenario: Selecting between multiple antenna elements in radar or SATCOM front-ends using RF relays built from discrete PIN diodes.

IC Role / Device Role / Timing Role: UM4006B acts as a low-loss, high-isolation RF series/shunt switch element controlled by DC bias sequencing.

Use Value: 1000 V reverse rating allows safe operation with high-PAPR waveforms; 0.5 Ω RS limits insertion loss to <0.2 dB at 2 GHz.

Use Scenario: Implementing digitally controlled phase delay stages in military UHF beamforming networks.

IC Role / Device Role / Timing Role: UM4006B functions as a switched-path impedance element in loaded-line or switched-line phase shifter topologies.

Use Value: Carrier lifetime >5 µs ensures stable phase states under pulsed RF excitation; 25 W power rating supports multi-kW average power handling per stage.

Megawatt DuplexerRF Filter Network Tuning

Use Scenario: Protecting T/R modules in ground-based radar systems by routing high-peak-power transmit pulses away from sensitive receivers.

IC Role / Device Role / Timing Role: UM4006B serves as the main series-blocking element in circulator-less duplexers operating at 1–2 GHz.

Use Value: Peak RF voltage handling well beyond 1000 V reverse bias enables reliable operation at 100 kW peak power without avalanche triggering.

Use Scenario: Dynamically reconfiguring bandpass response in cavity-coupled filters used in electronic warfare jammers.

IC Role / Device Role / Timing Role: UM4006B replaces fixed capacitors/inductors by acting as voltage-controlled reactance in filter branch switching.

Use Value: Low 3 pF capacitance and high 15 kΩ parallel resistance maintain Q-factor >100 in tuned cavities at 800 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF PIN diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
UM4906BSame electrical specs but 4 °C/W thermal resistance (vs. 6 °C/W for UM4006B); higher 37.5 W PD rating at 25 °C stud tempPreferred where higher continuous RF power or tighter thermal budget exists; same footprint and bias requirementsSelect UM4906B when system-level thermal design cannot accommodate UM4006B's 25 W limit
MACOM MADP-000907Lower 500 V reverse rating; 0.45 Ω RS; 2.2 pF CT; TO-272 package with different thermal pathBetter suited for compact surface-mount designs below 1 GHz; not qualified for megawatt duplexersChoose MADP-000907 only for space-constrained HF–L-band applications where 1000 V rating is unnecessary

Compared with UM4006B, UM4906B delivers higher power headroom in identical mounting, while MADP-000907 trades voltage robustness for smaller size and lower capacitance - making UM4006B optimal for legacy stud-mount UHF infrastructure requiring field-proven 1000 V reliability.

Availability

UM4006B is available at Aetrix Electronics and suitable for UHF phase shifters, megawatt radar duplexers, antenna selector switches, and RF filter network tuning requiring stable component supply across extended production lifecycles.

Supply support for UM4006B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) specializes in high-reliability analog and RF semiconductors for aerospace, defense, and industrial applications.

The UM4000/UM4900 series was engineered specifically for mission-critical RF power control in radar, SATCOM, and EW systems where voltage endurance, thermal stability, and long-term reliability outweigh cost or size constraints.

FAQ

What is the maximum reverse voltage rating for UM4006B?

The UM4006B has a reverse voltage rating of 1000 V at 10 µA leakage current. This rating is validated under DC and RF conditions up to S-band frequencies and is critical for safe operation in high-peak-power duplexers and antenna switches. Exceeding this voltage risks irreversible avalanche breakdown. The UM4006B datasheet specifies this value unambiguously in the Voltage Ratings table on page 1.

Does UM4006B require a heatsink, and what is its thermal resistance?

Yes, UM4006B requires a heatsink mounted to its insulated stud. Its thermal resistance is 6 °C/W at 25 °C stud temperature, enabling 25 W continuous power dissipation. This value assumes proper torque, thermal interface material, and heatsink surface flatness per Microsemi's mechanical guidelines. Without adequate heatsinking, junction temperature rise will exceed safe limits even at moderate RF drive levels.

Is UM4006B RoHS compliant, and what is the compliant version?

The standard UM4006B uses Sn/Pb finish and is not RoHS compliant. The RoHS-compliant version is UMX4006B, which substitutes matte tin plating and meets EU Directive 2002/95/EC. Both share identical electrical and thermal specifications; only the terminal finish differs. UMX4006B is orderable with the UMX prefix and is documented in the same datasheet revision.

How does UM4006B differ from UM4906B in practical design use?

UM4006B and UM4906B are electrically identical but differ thermally: UM4906B achieves 37.5 W PD and 4 °C/W θ due to a shorter thermal path from die to stud. In practice, UM4006B is selected when legacy mechanical interfaces or qualification history mandate the Style B package, while UM4906B is preferred when higher power density is needed without changing layout.

What is the typical series resistance of UM4006B, and how does it vary with bias?

The typical series resistance of UM4006B is 0.5 Ω at 100 mA forward current and 100 MHz. As bias current increases to 500 mA, RS drops to ~0.35 Ω; below 10 mA, it rises above 1.5 Ω. This behavior is documented in the "RS vs IF @ 100 MHz" graph on page 3 of the UM4000/UM4900 datasheet and directly impacts insertion loss in RF switch designs.

UM4006B Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
UM4000
Package/Case:
Axial
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
600V
Current - Max:
-
Capacitance @ Vr, F:
3pF @ 100V, 1MHz
Resistance @ If, F:
500mOhm @ 100mA, 100MHz
Power Dissipation (Max):
12 W
Operating Temperature:
-65°C ~ 175°C
Grade:
-
Qualification:
-
Supplier Device Package:
Axial

UM4006B FAQ

1.How can I place an order for UM4006B through Aetrix?

Please submit a Request for Quotation (RFQ) for UM4006B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UM4006B reliable?

The price and inventory of UM4006B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM4006B is usually 5 days.

3.What payment methods are accepted for UM4006B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM4006B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UM4006B?

UM4006B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UM4006B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UM4006B?

For technical support, including UM4006B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM4006B requirements.

6.How does Aetrix verify that UM4006B is sourced from the original manufacturer or authorized distributors?

All UM4006B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM4006B meets industry standards.

7.What is the process for return or replacement of UM4006B?

All UM4006B units undergo pre-shipment inspection (PSI). If there is an issue with UM4006B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UM4006B part is unused and in its original packaging.

Return procedure for UM4006B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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