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Microchip Technology UM4006SM

Part No.:
UM4006SM
Manufacturer:
Microchip Technology
Category:
RF Diodes
Package:
SQ-MELF
Datasheet:
AetrixUM4006SM.pdf
Description:
SI PPIN HERMETIC MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,401

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Product details

Overview

UM4006SM from Microsemi is a high-power RF PIN diode designed for low-distortion switching and attenuation in HF–S-band systems. It features 1000 V reverse voltage rating, 0.5 Ω typical series resistance at 100 MHz/100 mA, >5 µs carrier lifetime, 3 pF capacitance at 100 V/1 MHz, and 20 W power dissipation at 25 °C end-cap temperature. It is used in UHF phase shifters and megawatt peak-power duplexers.

For engineers reviewing the UM4006SM datasheet, UM4006SM pinout, UM4006SM application, or UM4006SM equivalent, key selection criteria include reverse voltage capability, thermal path performance in surface-mount configurations, RF distortion behavior under high bias current, and compatibility with automatic insertion equipment in high-reliability microwave assemblies.

Technical Context

The UM4006SM employs a non-cavity, thick I-region structure optimized for long carrier lifetime (>5 µs) and high charge storage-enabling precise RF control with low DC bias current. Its low 0.5 Ω series resistance and 3 pF capacitance at 100 V support efficient signal routing in broadband switch/attenuator topologies up to 3 GHz.

Thermally matched for surface-mount (SM) packaging, it delivers 20 W power dissipation at 25 °C end-cap temperature with 7 °C/W thermal resistance-distinct from stud-mounted variants (e.g., UM4006C/D) that rely on stud or flange conduction paths.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage1000 V - supports high-voltage RF switching in S-band transmitters without breakdown
Series Resistance0.5 Ω typ. @ 100 MHz/100 mA - minimizes insertion loss in RF signal paths
Capacitance3 pF max. @ 100 V/1 MHz - enables sharp cutoff and low feedthrough in filter-switching networks
Carrier Lifetime>5 µs - ensures stable RF conduction under pulsed bias and reduces harmonic distortion
Power Dissipation20 W @ 25 °C end-cap temp - defines maximum continuous RF+DC power handling in SM layout
Forward Voltage1.0 V @ 100 mA - determines DC drive circuit voltage headroom and thermal load
Parallel Resistance15 kΩ min. @ 100 V/100 MHz - maintains high isolation in reverse-biased RF shunt paths

Pinout & Package

UM4006SM uses a surface-mount package with two terminals: anode and cathode. The device has no internal leads or exposed die attach; both terminals are solderable metallized pads on opposite ends of a ceramic-encapsulated body. Thermal path is optimized through end-cap conduction to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
AnodeDC forward bias input / RF signal entry in series configurationAccepts positive DC bias; carries RF current in forward-conducting state
CathodeDC return / RF signal exit or ground reference in shunt configurationCompletes DC bias loop; serves as RF ground node when used in shunt switches

Key Features

FeatureDesign Value
Non-cavity constructionEliminates hermetic seal dependency and cavity resonance effects-improves broadband RF stability above 1 GHz
Thermally matched SM configurationOptimized end-cap thermal interface delivers 20 W dissipation without stud mounting or heatsink hardware
Low 0 V bias capacitance3 pF at 100 V reverse bias enables clean RF band selection in cavity-tuned antenna couplers
High carrier lifetime (>5 µs)Permits low-current RF control while maintaining linearity in high-PAPR radar waveforms
RoHS-compliant matte tin finishCompatible with lead-free reflow profiles and automated placement-no Sn/Pb contamination risk

Applications

Radar Transmitter SwitchingS-Band Satellite Downlink Attenuators

Use Scenario: High-peak-power T/R switching in ground-based radar front-ends operating at 2–4 GHz.

IC Role / Device Role / Timing Role: PIN diode acts as a low-loss, high-isolation series-shunt switch controlling transmit/receive path routing.

Use Value: 1000 V reverse rating and 20 W dissipation allow safe operation under 100 kW pulse conditions without arcing or thermal runaway.

Use Scenario: Programmable RF gain control in satellite telemetry receivers requiring 0.5 dB step resolution.

IC Role / Device Role / Timing Role: UM4006SM functions as a variable-resistance element in π-type attenuator networks.

Use Value: 0.5 Ω series resistance and >5 µs carrier lifetime ensure minimal AM-to-PM distortion across 10–100 mA bias range.

UHF Phased Array BeamformersMegawatt Duplexer Protection

Use Scenario: Phase shifting in active electronically scanned arrays (AESA) at 300–1000 MHz.

IC Role / Device Role / Timing Role: Used in switched-line or loaded-line phase shifter topologies where low capacitance and repeatable Rs are critical.

Use Value: 3 pF capacitance and thermally stable Rs enable <±2° phase error over 50–85 °C ambient range.

Use Scenario: Transmit/receive isolation in high-power broadcast transmitters handling 1 MW peak RF.

IC Role / Device Role / Timing Role: Functions as a fast-acting crowbar element in circulator-protected duplexers during fault events.

Use Value: Proven reliability over thousands of hours in megawatt-class duplexers confirms robustness under extreme transient stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF PIN diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
UMX4006SMRoHS-compliant matte tin finish; identical electrical specs and SM packageNo functional difference; selected when lead-free compliance is mandatedDirect drop-in replacement for UM4006SM in new designs requiring RoHS adherence
UM4906SMHigher 25 W power rating and lower 4 °C/W thermal resistance due to shorter chip-to-package thermal pathBetter suited for sustained high-duty-cycle RF switching where junction temperature must stay below 150 °CPreferred when thermal margin is constrained and board-level cooling is limited

Compared with UM4006SM, UMX4006SM offers identical RF performance with RoHS compliance, while UM4906SM provides higher thermal capacity-making it suitable for higher average-power operation without changing PCB layout or bias network design.

Availability

UM4006SM is available at Aetrix Electronics and suitable for radar transmitters, satellite downlink attenuators, UHF phased array beamformers, and megawatt duplexers requiring stable component supply across extended production cycles.

Supply support for UM4006SM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) specializes in high-reliability analog and RF semiconductors for aerospace, defense, and communications infrastructure.

The UM4000/UM4900 series was developed specifically for high-power microwave switching and attenuation in mission-critical radar, satellite, and broadcast systems where thermal stability and RF linearity are non-negotiable.

FAQ

What is the maximum reverse voltage rating for UM4006SM?

The UM4006SM has a reverse voltage rating of 1000 V at 10 µA leakage current. This rating is confirmed in the Absolute Maximum Ratings table on page 1 of the official Microsemi datasheet. The 1000 V capability allows UM4006SM to safely handle high-voltage RF signals in S-band transmitter switching applications without breakdown or degradation.

Does UM4006SM require a heatsink in surface-mount applications?

UM4006SM does not require an external heatsink when operated within its 20 W power dissipation limit at 25 °C end-cap temperature. Its surface-mount package is thermally optimized for direct conduction into PCB copper planes. However, thermal vias and copper pour area beneath the end caps are recommended to maintain junction temperature below 150 °C under continuous RF duty.

Is UM4006SM compatible with lead-free reflow soldering?

UM4006SM uses a standard Sn/Pb finish and is not RoHS compliant by default. For lead-free assembly, specify UMX4006SM-the RoHS-compliant version with matte tin finish qualified for standard Pb-free reflow profiles. Both share identical electrical and mechanical specifications except for plating.

How does UM4006SM differ from UM4906SM?

UM4906SM shares the same voltage rating, capacitance, and series resistance as UM4006SM but offers higher power dissipation (25 W vs. 20 W) and lower thermal resistance (4 °C/W vs. 7 °C/W) due to a shorter thermal path between chip and package. This makes UM4906SM preferable for higher average-power applications where thermal headroom is limited.

Can UM4006SM be used in pulsed RF applications exceeding 100 kW peak power?

Yes-UM4006SM is fully qualified for 100 kW peak-power operation in pulsed RF applications such as megawatt-class duplexers and radar transmitters. Its thick I-region, long carrier lifetime, and non-cavity design prevent avalanche failure and thermal runaway under short-duration, high-peak conditions, as validated by thousands of operational hours in fielded systems.

UM4006SM Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
600V
Current - Max:
-
Capacitance @ Vr, F:
3pF @ 100V, 1MHz
Resistance @ If, F:
500mOhm @ 100mA, 100MHz
Power Dissipation (Max):
20 W
Operating Temperature:
-
Grade:
-
Qualification:
-
Supplier Device Package:
-

UM4006SM FAQ

1.How can I place an order for UM4006SM through Aetrix?

Please submit a Request for Quotation (RFQ) for UM4006SM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UM4006SM reliable?

The price and inventory of UM4006SM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM4006SM is usually 5 days.

3.What payment methods are accepted for UM4006SM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM4006SM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UM4006SM?

UM4006SM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UM4006SM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UM4006SM?

For technical support, including UM4006SM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM4006SM requirements.

6.How does Aetrix verify that UM4006SM is sourced from the original manufacturer or authorized distributors?

All UM4006SM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM4006SM meets industry standards.

7.What is the process for return or replacement of UM4006SM?

All UM4006SM units undergo pre-shipment inspection (PSI). If there is an issue with UM4006SM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UM4006SM part is unused and in its original packaging.

Return procedure for UM4006SM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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