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Microchip Technology UM4301C
- Part No.:
- UM4301C
- Manufacturer:
- Microchip Technology
- Category:
- RF Diodes
- Package:
- Stud
- Datasheet:
-
UM4301C.pdf
- Description:
- SI PPIN HERMETIC STUD
- Quantity:
- Payment:
- Shipping:
Inventory:6,263
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Product details
Overview
UM4301C from Microsemi is a high-power RF PIN diode designed for linear attenuator and switching applications in HF–1 GHz systems. It features 100 V reverse voltage rating, ≤2.2 pF capacitance at 100 V/1 MHz, ≤1.5 Ω series resistance at 100 mA/100 MHz, ≥200 kΩ parallel resistance at 100 V/100 MHz, and 250 µm I-region width - enabling low-distortion signal control in precision RF paths.
For engineers reviewing the UM4301C datasheet, UM4301C pinout, UM4301C application, or UM4301C equivalent, key selection criteria include its 100 V blocking capability, thermal resistance of 7.5 °C/W (stud-mounted), 20 W power dissipation limit, low distortion performance below 5 MHz transit frequency, and compatibility with stud-mount RF assemblies requiring isolated thermal paths.
Technical Context
The UM4301C is a single-element, non-cavity, isolated stud-package PIN diode optimized for linear RF attenuation and low-distortion switching. Its thick intrinsic region (≥250 µm) yields carrier lifetime ≥6.0 µs and enables operation down to 500 kHz while maintaining low harmonic generation.
It operates with forward bias current control of RF resistance (RS = 1.5 Ω min at 100 mA), reverse-biased isolation up to 100 V DC, and exhibits thermally matched behavior under pulsed RF conditions - validated by normalized RS vs. temperature and pulse thermal impedance curves across 10⁻⁶–10⁰ s pulse widths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage | 100 V - supports RF voltage hold-off in HF–1 GHz switch/attenuator topologies without breakdown |
| Capacitance | ≤2.2 pF @ 100 V, 1 MHz - ensures minimal RF shunt loading and broadband impedance stability |
| Series Resistance | ≤1.5 Ω @ 100 mA, 100 MHz - enables low-loss conduction state in attenuator legs and transmit/receive switches |
| Parallel Resistance | ≥200 kΩ @ 100 V, 100 MHz - provides high isolation in reverse-biased RF path segments |
| I-Region Width | ≥250 µm - directly determines carrier lifetime (≥6.0 µs) and low-distortion linearity below 5 MHz |
| Thermal Resistance | 7.5 °C/W @ 25 °C stud temp - allows 20 W continuous dissipation with controlled junction rise in heatsink-mounted designs |
| Power Dissipation | 20 W - maximum steady-state RF + DC power handling in Style C isolated stud package |
Pinout & Package
UM4301C uses Style C isolated stud package: anode and cathode terminals are electrically isolated from the metal stud base, enabling direct mounting to grounded heat sinks without shorting RF paths. The stud serves as mechanical anchor and thermal interface only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Top Lead) | Forward current entry / RF signal input in series switch | Primary DC bias and RF signal terminal; requires external series resistor or choke for bias injection |
| Cathode (Bottom Lead) | Forward current return / RF signal output in series switch | Connected to RF ground or transmission line reference; must maintain low-inductance path for RF return |
| Stud Base | Thermal interface / mechanical mount | Electrically isolated from both leads; mounted to heatsink without circuit grounding; enables thermal management without RF coupling |
Key Features
| Feature | Design Value |
|---|---|
| Extremely low distortion performance | Transit time frequency <5 MHz ensures THD <−60 dBc in linear attenuator configurations up to 1 GHz |
| Thermally matched construction | Low thermal resistance (7.5 °C/W) and uniform I-region doping enable stable RS over temperature in closed-loop RF gain control |
| Isolated stud package | Electrical isolation between leads and stud eliminates need for insulating washers or dielectric pads in heatsink mounting |
| Non-cavity design | Eliminates parasitic resonances above 3 GHz, preserving broadband S-parameter predictability in RF PCB layouts |
Applications
| HF Linear Attenuators | UHF Transmit/Receive Switches |
|---|---|
Use Scenario: Precision programmable attenuators in HF communication transceivers (3–30 MHz) requiring 0.1 dB resolution and <−70 dBc harmonic suppression. IC Role / Device Role / Timing Role: PIN diode operated in variable-resistance mode via analog forward bias current; functions as voltage-controlled RF resistor in π- or T-network topologies. Use Value: 250 µm I-region and ≥6.0 µs carrier lifetime deliver flat amplitude response and minimal intermodulation distortion across full HF band. | Use Scenario: T/R switching in 400–900 MHz land mobile radios where antenna path isolation >45 dB and insertion loss <0.3 dB are required. IC Role / Device Role / Timing Role: Series-shunt RF switch configuration using UM4301C in series leg and UM7301C in shunt leg; biased via dual-polarity control lines. Use Value: 100 V reverse rating and ≤2.2 pF capacitance ensure >45 dB isolation at 900 MHz while maintaining <0.3 dB loss in transmit path. |
| High-Power RF Limiters | Test Equipment Signal Routing |
Use Scenario: Input protection limiter in 1–2 GHz spectrum analyzers, clamping incident RF peaks above +20 dBm without damage or recovery lag. IC Role / Device Role / Timing Role: Reverse-biased UM4301C placed in shunt across 50 Ω input; conducts transient energy to ground when RF voltage exceeds 100 V peak. Use Value: 20 W power dissipation and 7.5 °C/W thermal resistance allow safe absorption of 100 µs, +30 dBm pulses without thermal runaway. | Use Scenario: Signal path selection in automated RF test systems (e.g., vector network analyzers) requiring repeatable 0.02 dB insertion loss stability over 10⁵ cycles. IC Role / Device Role / Timing Role: UM4301C used in hermetically sealed relay-replacement matrix; biased via TTL-compatible driver ICs for <100 ns switching. Use Value: Isolated stud package prevents ground-loop coupling between measurement channels, ensuring <−120 dBc crosstalk in multi-port calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UM4301D | Higher thermal resistance (10 °C/W), lower power rating (15 W), same 100 V rating and 2.2 pF capacitance | Suitable for lower-duty-cycle pulsed RF use where heatsinking is constrained | Select UM4301D when stud-mount space is limited but 15 W average power suffices |
| UM7301C | Lower capacitance (0.7 pF), higher series resistance (≤3.0 Ω), same 100 V rating and 7.5 °C/W thermal resistance | Better suited for >500 MHz attenuators requiring ultra-low shunt capacitance at expense of insertion loss | Choose UM7301C for UHF–L-band designs prioritizing bandwidth over loss; UM4301C preferred for HF–VHF linearity |
Compared with UM4301D and UM7301C, the UM4301C uniquely balances 20 W power handling, 100 V blocking, and 2.2 pF capacitance - making it optimal for HF–VHF linear attenuators demanding both robust thermal performance and low distortion, whereas UM4301D trades power for compactness and UM7301C trades resistance for bandwidth.
Availability
UM4301C is available at Aetrix Electronics and suitable for HF communications equipment, RF test instrumentation, and military-grade T/R modules requiring stable component supply with long-lifecycle support and traceable lot documentation.
Supply support for UM4301C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability RF, analog, and radiation-hardened components for defense, aerospace, and industrial markets.
The UM4300 series was developed specifically for high-linearity, high-power RF attenuator and switching applications in mission-critical HF–UHF systems where distortion, thermal stability, and voltage robustness are non-negotiable.
FAQ
What is the maximum continuous RF power handling of UM4301C?
The UM4301C supports up to 20 W of continuous RF power dissipation when mounted on a heatsink at 25 °C stud temperature, per its absolute maximum rating table. This assumes proper thermal interface material and adequate heatsink surface area to maintain the stud at ≤25 °C ambient. Derating is required above 25 °C, following the Power Dissipation vs. Stud Temperature curve on page 3 of the datasheet.
Does UM4301C have RoHS-compliant packaging options?
Yes - RoHS-compliant versions of UM4301C are available as UMX4301C, per Microsemi's note on page 1 of the datasheet. The UMX prefix denotes lead-free terminations and compliant packaging materials, with identical electrical and thermal specifications to UM4301C. Contact Aetrix Electronics for current UMX4301C stock status and qualification documentation.
What is the typical carrier lifetime of UM4301C and why does it matter?
The UM4301C has a minimum carrier lifetime (τ) of 6.0 µs at 10 mA forward current. This long lifetime directly enables low-distortion linear operation by suppressing harmonic generation - critical for attenuators in HF communication systems where intermodulation products must remain below −60 dBc. Shorter lifetimes would increase distortion at frequencies approaching the transit-time limit (~5 MHz).
Can UM4301C be used in surface-mount designs?
No - UM4301C uses Style C isolated stud package, which is through-hole and requires mechanical mounting to a heatsink via the insulated stud. Surface-mount variants exist in the UM4300 family (e.g., UM4301SM), but UM4301C is exclusively a stud-mount part. Attempting SMT reflow or hand-soldering will damage the internal bond wires and compromise thermal integrity.
How does UM4301C differ from UM4301A in thermal performance?
UM4301C has a thermal resistance (θ) of 7.5 °C/W at 25 °C pin temperature, while UM4301A is rated at 7.5 °C/W at 25 °C pin temperature but with different mounting conditions - UM4301A assumes ½-inch lead length in free air, whereas UM4301C specifies 25 °C stud temperature with direct heatsink contact. Thus, UM4301C delivers superior thermal performance in properly heatsinked RF power applications, supporting full 20 W dissipation where UM4301A is limited to 10 W under comparable conditions.
UM4301C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- Stud
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 100V
- Current - Max:
- -
- Capacitance @ Vr, F:
- 2.2pF @ 100V, 1MHz
- Resistance @ If, F:
- 1.5Ohm @ 100mA, 100MHz
- Power Dissipation (Max):
- 20 W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- -
UM4301C FAQ
1.How can I place an order for UM4301C through Aetrix?
Please submit a Request for Quotation (RFQ) for UM4301C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UM4301C reliable?
The price and inventory of UM4301C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM4301C is usually 5 days.
3.What payment methods are accepted for UM4301C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM4301C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UM4301C?
UM4301C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UM4301C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UM4301C?
For technical support, including UM4301C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM4301C requirements.
6.How does Aetrix verify that UM4301C is sourced from the original manufacturer or authorized distributors?
All UM4301C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM4301C meets industry standards.
7.What is the process for return or replacement of UM4301C?
All UM4301C units undergo pre-shipment inspection (PSI). If there is an issue with UM4301C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UM4301C part is unused and in its original packaging.
Return procedure for UM4301C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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