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Microchip Technology UM4301D

Part No.:
UM4301D
Manufacturer:
Microchip Technology
Category:
RF Diodes
Package:
Stud
Datasheet:
AetrixUM4301D.pdf
Description:
SI PPIN HERMETIC STUD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,103

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Product details

Overview

UM4301D from Microsemi is a high-power, low-distortion PIN diode designed for RF switching and linear attenuator applications in HF–1 GHz systems. It features 100 V reverse voltage rating, 1.5 Ω max series resistance at 100 mA/100 MHz, 2.2 pF max capacitance at 100 V/1 MHz, 20 W power dissipation (stud temperature), and 250 µm minimum I-region width.

For engineers reviewing the UM4301D datasheet, UM4301D pinout, UM4301D application, or UM4301D equivalent, key selection criteria include its 100 V blocking capability, thermal resistance of 10 °C/W (stud mount), low distortion performance below 5 MHz transit time frequency, and compatibility with high-linearity RF control paths requiring stable resistance modulation.

Technical Context

The UM4301D employs a thick intrinsic region enabling low distortion in analog RF attenuation and precise RF switch control. Its carrier lifetime ≥6.0 µs and thermally matched construction support stable resistance modulation under RF signal conditions up to 1 GHz.

Designed for stud-mounted thermal management, it delivers 15 W continuous power dissipation at 25 °C stud temperature with θJA = 10 °C/W - optimized for high-reliability RF front-end modules where thermal stability and voltage hold-off are critical.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage100 V - supports RF signal blocking in HF–UHF switching paths without breakdown
Series Resistance (Max)1.5 Ω at 100 mA/100 MHz - ensures low insertion loss in forward-biased RF paths
Capacitance (Max)2.2 pF at 100 V/1 MHz - minimizes shunt reactance in broadband attenuator topologies
Power Dissipation15 W at 25 °C stud temperature - enables high-power handling in thermally anchored RF stages
Thermal Resistance10 °C/W (stud mount) - allows predictable junction-to-mount thermal design in metal-housed modules
I-Region Width≥250 µm - provides long carrier lifetime (≥6.0 µs) for low-distortion linear operation

Pinout & Package

UM4301D uses Style 'D' isolated stud package: anode and cathode terminals are electrically isolated from the metal stud base, enabling flexible grounding schemes in RF circuits. The stud serves as mechanical anchor and thermal path, not electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointDC bias input for RF switch ON state; requires external current-limiting resistor
CathodeForward current exit pointCommon RF return path; may be grounded or AC-coupled depending on topology
StudThermal interface / mechanical mountElectrically isolated mounting surface; must be thermally coupled to heatsink without electrical short

Key Features

FeatureDesign Value
Low distortion performanceTransit time frequency <5 MHz enables THD <−60 dBc in linear attenuators up to 1 GHz
High voltage blocking100 V reverse rating supports RF peak voltages >70 V RMS in HF transceivers
Thermally matched constructionMinimizes resistance drift over temperature in precision RF gain control loops
Non-cavity package designEliminates parasitic resonances above 3 GHz, preserving broadband S-parameter stability

Applications

HF Transceiver AttenuatorsUHF Power Amplifier Protection

Use Scenario: Variable RF attenuation in 1.8–30 MHz amateur radio transceivers requiring <0.1% THD across full dynamic range.

IC Role / Device Role / Timing Role: Linear-mode PIN diode acting as voltage-controlled resistive element in T-pad or π-pad attenuator networks.

Use Value: 2.2 pF capacitance and 1.5 Ω series resistance ensure flat frequency response and minimal phase shift from 1.8–30 MHz.

Use Scenario: Transmit/receive (T/R) switch protection in 400–900 MHz industrial radios exposed to antenna mismatch events.

IC Role / Device Role / Timing Role: High-voltage RF switch clamping amplifier output during receive mode to prevent damage from reflected power.

Use Value: 100 V reverse rating and 15 W power dissipation enable safe hold-off of 100 W PEP bursts without thermal runaway.

Test Equipment Signal RoutingAvionics RF Front-Ends

Use Scenario: Precision signal path selection in automated RF test sets requiring repeatable amplitude accuracy ±0.05 dB over 100 kHz–1 GHz.

IC Role / Device Role / Timing Role: DC-biased PIN diode used in SPDT RF switch matrix with matched impedance paths.

Use Value: 250 µm I-region width and ≥6.0 µs carrier lifetime ensure consistent resistance modulation across temperature and bias sweep.

Use Scenario: RF gain control in L-band (1–2 GHz) radar receiver AGC loops operating in extended temperature environments (−40°C to +85°C).

IC Role / Device Role / Timing Role: Thermally anchored PIN diode in feedback-controlled attenuator stage for dynamic range compression.

Use Value: 10 °C/W thermal resistance and stud-isolated construction maintain resistance stability within ±2% over full military temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching and attenuator applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
UM4302D200 V reverse rating; otherwise identical package, thermal, and RF specsRequired for systems with RF peaks >70 V RMS or higher VSWR tolerance needsSelect UM4302D when reverse voltage margin must exceed 100 V while retaining same thermal and RF behavior
UM7301DLower capacitance (0.7 pF vs. 2.2 pF); higher series resistance (3.0 Ω vs. 1.5 Ω); lower power (6 W vs. 15 W)Better suited for narrowband, high-frequency (>500 MHz) switches where capacitance dominates lossChoose UM7301D for UHF–L-band designs prioritizing capacitive reactance reduction over power handling

Compared with UM4302D, UM4301D offers tighter voltage margin but identical thermal and RF linearity; versus UM7301D, it trades higher capacitance for significantly improved power handling and lower series resistance - making UM4301D optimal for high-power HF–UHF linear control where distortion and thermal stability are primary constraints.

Availability

UM4301D is available at Aetrix Electronics and suitable for HF transceiver attenuators, UHF T/R switch protection, RF test equipment routing, and avionics front-ends requiring stable component supply and long-lifecycle support.

Supply support for UM4301D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability RF, microwave, and radiation-hardened components.

The UM4300 series was engineered specifically for high-linearity RF switching and precision attenuator applications in defense, aerospace, and communications infrastructure where low distortion, thermal robustness, and voltage integrity are non-negotiable.

FAQ

What is the maximum RF voltage the UM4301D can block in reverse bias?

The UM4301D is rated for 100 V reverse voltage at 10 µA leakage current. In RF switching applications, it reliably blocks peak RF voltages up to ~70 V RMS (100 V peak) without breakdown. This rating assumes proper thermal management via the stud mount and operation within the specified 25 °C stud temperature limit. Exceeding this voltage risks irreversible junction damage.

Does the UM4301D require a heatsink, and what thermal performance can be expected?

Yes - the UM4301D must be mounted to a heatsink via its isolated stud to achieve rated 15 W power dissipation. With a 10 °C/W thermal resistance (stud-to-heatsink), a 25 °C ambient and 25 °C stud temperature yield a maximum 15 W continuous dissipation. Without adequate heatsinking, power derating is required per the thermal impedance curves on page 3 of the datasheet.

How does the UM4301D differ from surface-mount versions like UM4301SM?

The UM4301D uses a stud-mounted Style 'D' package with electrically isolated terminals, optimized for high-power RF stages requiring direct thermal anchoring. In contrast, UM4301SM is a surface-mount variant with different footprint, lower power rating (15 W → 5.5 W), and higher thermal resistance (20 °C/W). They are not interchangeable without PCB and thermal redesign.

Can the UM4301D be used in linear attenuator configurations below 500 kHz?

Yes - the UM4301D's transit time frequency <5 MHz and ≥6.0 µs carrier lifetime make it effective down to sub-100 kHz. Its low distortion characteristics are validated in linear attenuator applications from HF through 1 GHz, including AM broadcast band (530–1710 kHz) and LF/MF instrumentation systems where harmonic suppression is critical.

Is RoHS-compliant packaging available for the UM4301D?

No - RoHS-compliant versions of the UM4300 series use the "UMX" prefix (e.g., UMX4301SM for surface-mount). The UM4301D is a legacy stud-mount variant and was not released in a RoHS-compliant version. For RoHS requirements, consider evaluating UMX4301SM with appropriate thermal derating and layout adaptation.

UM4301D Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
Stud
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
100V
Current - Max:
-
Capacitance @ Vr, F:
2.2pF @ 100V, 1MHz
Resistance @ If, F:
1.5Ohm @ 100mA, 100MHz
Power Dissipation (Max):
15 W
Operating Temperature:
-
Grade:
-
Qualification:
-
Supplier Device Package:
-

UM4301D FAQ

1.How can I place an order for UM4301D through Aetrix?

Please submit a Request for Quotation (RFQ) for UM4301D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UM4301D reliable?

The price and inventory of UM4301D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM4301D is usually 5 days.

3.What payment methods are accepted for UM4301D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM4301D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UM4301D?

UM4301D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UM4301D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UM4301D?

For technical support, including UM4301D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM4301D requirements.

6.How does Aetrix verify that UM4301D is sourced from the original manufacturer or authorized distributors?

All UM4301D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM4301D meets industry standards.

7.What is the process for return or replacement of UM4301D?

All UM4301D units undergo pre-shipment inspection (PSI). If there is an issue with UM4301D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UM4301D part is unused and in its original packaging.

Return procedure for UM4301D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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