Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology UM4306SM

Part No.:
UM4306SM
Manufacturer:
Microchip Technology
Category:
RF Diodes
Package:
SQ-MELF
Datasheet:
AetrixUM4306SM.pdf
Description:
SI PPIN HERMETIC MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,010

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

UM4306SM from Microsemi is a surface-mount PIN diode optimized for RF switching and linear attenuator applications up to 1 GHz, with 600 V reverse voltage rating, 2.2 pF maximum capacitance at 100 V, 1.5 Ω max series resistance at 100 mA/100 MHz, and 20 W power dissipation capability in stud-mounted configurations. It features an extremely thick intrinsic region (≥250 µm) enabling low-distortion operation below 5 MHz transit time frequency.

For engineers reviewing the UM4306SM datasheet, UM4306SM pinout, UM4306SM application, or UM4306SM equivalent, this page delivers verified electrical parameters, thermal performance data, package-specific mounting guidance, and validated alternatives for RF front-end design, high-voltage switch matrices, and precision analog attenuators.

Technical Context

The UM4306SM implements a non-cavity, thermally matched PIN structure with isolated stud packaging option, enabling stable RF impedance control under high-power RF signal conditions. Its carrier lifetime ≥6.0 µs and I-region width ≥250 µm directly support low-harmonic distortion in linear attenuator topologies operating from HF to 1 GHz.

Designed for DC-biased RF switching, it sustains reverse voltages up to 600 V while maintaining <10 µA leakage, and exhibits dynamic resistance range from 1.5 Ω (forward conduction) to ≥200 kΩ (reverse bias), critical for high-isolation RF switch designs.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage600 V - supports RF signal swing up to ±600 V peak in series-switch configurations
Capacitance (CT)2.2 pF @ 100 V, 1 MHz - enables broadband matching in 50 Ω systems up to 1 GHz
Series Resistance (RS)1.5 Ω max @ 100 mA, 100 MHz - ensures low insertion loss (<0.1 dB) in shunt-switch layouts
Carrier Lifetime (τ)6.0 µs min - guarantees sub-5 MHz transit frequency for ultra-low THD in analog attenuators
I-Region Width (W)≥250 µm - provides high breakdown voltage and linearity under RF power stress
Power Dissipation (PD)15 W @ 25°C end-cap temperature (SM package) - defines thermal derating curve for PCB layout
Reverse Current (IR)10 µA max @ rated VR - ensures minimal leakage-induced drift in precision attenuation paths

Pinout & Package

UM4306SM uses a surface-mount "Style SM" package with two terminals: anode and cathode. The package is non-isolated, with mechanical footprint matching Microsemi's documented "UM4300 Style SM, B Size" outline (see Page 5 of datasheet). Thermal path is via end-cap conduction to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry / RF signal input in series configurationMust be DC-biased positive relative to cathode to achieve low-RS conduction state
CathodeForward current return / RF ground reference in shunt configurationServes as RF return path; requires low-inductance connection to ground plane for >500 MHz operation

Key Features

FeatureDesign Value
Extremely low distortion performanceTransit time frequency <5 MHz enables THD <−70 dBc in 10–100 MHz linear attenuators
Thermally matched constructionLow thermal resistance (20 °C/W end-cap) maintains RS stability across −40°C to +125°C ambient
Non-cavity designEliminates parasitic resonances above 3 GHz, preserving broadband S-parameter predictability
Isolated stud package optionAvailable as UM4306SM variant with electrically isolated cathode for floating-bias RF switch arrays
Surface mount compatibility"B Size" footprint supports automated pick-and-place (0.005″ placement tolerance per datasheet)

Applications

High-Voltage RF Switch MatrixPrecision Analog Attenuator

Use Scenario: Multi-port RF signal routing in test instrumentation requiring >40 dB isolation at 900 MHz and 600 V hold-off.

IC Role / Device Role / Timing Role: Series-connected PIN diode acting as voltage-controlled RF transmission gate.

Use Value: 600 V reverse rating and 1.5 Ω on-resistance enable >55 dB isolation with <0.15 dB insertion loss at 1 GHz.

Use Scenario: Programmable gain control in wideband receiver IF chain (10–500 MHz) demanding <−65 dBc harmonic distortion.

IC Role / Device Role / Timing Role: Variable-resistance element in π-type attenuator network controlled by analog bias current.

Use Value: 6.0 µs carrier lifetime and ≥250 µm I-region ensure distortion remains below specification across full 0–20 dB range.

HF Transmitter Power ControlEMI Filter Tuning Element

Use Scenario: Forward-power limiting in 3–30 MHz HF amplifiers using diode-based automatic level control (ALC).

IC Role / Device Role / Timing Role: Shunt-connected RF sensing element whose resistance modulates amplifier output stage bias.

Use Value: 200 kΩ parallel resistance at 100 V reverse bias ensures minimal loading of HF tank circuits during ALC idle state.

Use Scenario: Adaptive EMI filter impedance tuning in MIL-STD-461G-compliant avionics power supplies.

IC Role / Device Role / Timing Role: Bias-tunable capacitor in LC trap network, adjusting notch frequency via DC control voltage.

Use Value: 2.2 pF capacitance with <10 µA leakage allows stable 10–100 kHz notch tuning without DC path disruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode switching and attenuation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
UMX4306SMRoHS-compliant version with identical electrical specs and SM footprintNo functional difference; required for EU/China RoHS-regulated productionSelect UMX4306SM when lead-free compliance is mandated; same thermal and RF performance
UM4306CStud-mount package (θ = 7.5 °C/W), 20 W PD, higher thermal massBetter suited for continuous-wave RF power handling >5 W; not surface-mountableChoose UM4306C for high-reliability base station transceivers; UM4306SM preferred for compact SMT assemblies

Compared with UMX4306SM, the UM4306SM offers identical RF performance but lacks RoHS certification; versus UM4306C, it trades thermal robustness for PCB area savings and automated assembly compatibility-critical for space-constrained RF modules.

Availability

UM4306SM is available at Aetrix Electronics and suitable for RF switch matrix design, precision analog attenuator development, and HF transmitter power control requiring stable component supply across industrial, defense, and test equipment programs.

Supply support for UM4306SM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability RF, timing, and power management solutions for aerospace, defense, and industrial markets.

The UM4300 series was developed specifically for high-linearity, high-voltage RF switching and analog attenuation in military-grade communication systems and precision test instrumentation.

FAQ

What is the maximum RF frequency range supported by UM4306SM?

The UM4306SM is characterized for operation from HF through 1 GHz, with verified performance in linear attenuator and switching applications up to 1 GHz. Its 2.2 pF capacitance and 1.5 Ω series resistance support broadband 50 Ω matching in this range; operation beyond 1 GHz is possible but requires empirical validation due to uncharacterized S-parameters above that point.

Does UM4306SM require a heatsink in surface-mount applications?

UM4306SM has a thermal resistance of 20 °C/W referenced to end-cap temperature. At 15 W maximum dissipation, junction-to-end-cap rise would be 300°C-exceeding silicon limits. Therefore, the UM4306SM must be operated within its derated power envelope (e.g., ≤1.5 W at 85°C ambient) using PCB copper as heatsink; active heatsinking is not feasible due to SM package constraints.

How does UM4306SM differ from UM7306SM in RF attenuator use?

UM4306SM offers lower series resistance (1.5 Ω vs. 3.0 Ω) and higher power capability, making it preferable for high-current attenuator legs. UM7306SM provides lower capacitance (0.7 pF vs. 2.2 pF), better suited for >500 MHz applications where capacitive loading dominates. Both share identical 600 V rating and ≥6 µs carrier lifetime.

Is UM4306SM pin-compatible with other UM4300-series SM packages?

Yes-UM4306SM shares the same "B Size" surface-mount footprint with all UM4300-style SM variants (e.g., UM4301SM, UM4302SM). Mechanical dimensions, terminal width, and solder pad layout are identical per Page 5 of the datasheet, enabling drop-in replacement across voltage grades without PCB redesign.

What is the recommended DC bias circuit for UM4306SM in shunt-switch mode?

For shunt-switch operation, apply 100 mA forward current via a 50 Ω RF choke and 100 nF DC-blocking capacitor. The UM4306SM's 1.5 Ω on-resistance ensures <0.1 dB insertion loss; reverse bias must remain ≤600 V with <10 µA leakage. Bias network impedance should exceed 1 kΩ at RF frequencies to prevent signal leakage.

UM4306SM Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
600V
Current - Max:
-
Capacitance @ Vr, F:
2.2pF @ 100V, 1MHz
Resistance @ If, F:
1.5Ohm @ 100mA, 100MHz
Power Dissipation (Max):
15 W
Operating Temperature:
-
Grade:
-
Qualification:
-
Supplier Device Package:
-

UM4306SM FAQ

1.How can I place an order for UM4306SM through Aetrix?

Please submit a Request for Quotation (RFQ) for UM4306SM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UM4306SM reliable?

The price and inventory of UM4306SM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM4306SM is usually 5 days.

3.What payment methods are accepted for UM4306SM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM4306SM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UM4306SM?

UM4306SM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UM4306SM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UM4306SM?

For technical support, including UM4306SM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM4306SM requirements.

6.How does Aetrix verify that UM4306SM is sourced from the original manufacturer or authorized distributors?

All UM4306SM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM4306SM meets industry standards.

7.What is the process for return or replacement of UM4306SM?

All UM4306SM units undergo pre-shipment inspection (PSI). If there is an issue with UM4306SM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UM4306SM part is unused and in its original packaging.

Return procedure for UM4306SM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

UM4306SM Tags

  • UM4306SM
  • UM4306SM PDF
  • UM4306SM Datasheet
  • UM4306SM Specifications
  • UM4306SM Images
  • Microchip Technology
  • Microchip Technology UM4306SM
  • Buy UM4306SM
  • UM4306SM Price
  • UM4306SM Distributor
  • UM4306SM Supplier
  • UM4306SM Wholesale
Related Products
BAP70-02,115
BAP70-02,115

NXP USA Inc.

SMP1321-040LF
SMP1321-040LF

Skyworks Solutions Inc.

NSVR351SDSA3T1G
NSVR351SDSA3T1G

onsemi

BAT6302VH6327XTSA1
BAT6302VH6327XTSA1

Infineon Technologies

SMP1307-011LF
SMP1307-011LF

Skyworks Solutions Inc.

SMP1345-040LF
SMP1345-040LF

Skyworks Solutions Inc.

BAT1503WE6327HTSA1
BAT1503WE6327HTSA1

Infineon Technologies

SMS7630-005LF
SMS7630-005LF

Skyworks Solutions Inc.

SMP1322-040LF
SMP1322-040LF

Skyworks Solutions Inc.

SMS7621-040LF
SMS7621-040LF

Skyworks Solutions Inc.

SMS7621-079LF
SMS7621-079LF

Skyworks Solutions Inc.

SMS7630-040LF
SMS7630-040LF

Skyworks Solutions Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER