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Microchip Technology UM7501F
- Part No.:
- UM7501F
- Manufacturer:
- Microchip Technology
- Category:
- RF Diodes
- Package:
- -
- Datasheet:
-
UM7501F.pdf
- Description:
- SI PPIN HERMETIC MELF
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
UM7501F from Microsemi is a high-voltage, low-leakage RF power PIN diode designed for microwave switch and attenuator circuits in MRI and CAT scan systems. It features 200 V reverse voltage rating, <0.5 µA reverse current at rated voltage, 0.8–1.0 Ω series resistance at 100 MHz/50 mA, 2.5–3.5 µs carrier lifetime, and hermetic fused-in-glass construction.
For engineers reviewing the UM7501F datasheet, UM7501F pinout, UM7501F application, or UM7501F equivalent, key selection criteria include reverse voltage margin for pulsed RF switching, thermal resistance in stud-mount configurations, harmonic distortion performance at 100 MHz, and compatibility with automatic insertion equipment in medical imaging subsystems.
Technical Context
The UM7501F employs a fully passivated silicon PIN structure with precisely controlled 100 µm I-region width to ensure stable reverse characteristics and low distortion. Its metallurgically bonded, thermally matched construction enables reliable operation up to +175 °C junction temperature and supports high-power RF duty cycles.
It delivers low forward-series resistance (0.8–1.0 Ω) and high parallel resistance (>100 kΩ at 100 V), enabling efficient RF signal routing in transmit/receive (T/R) modules. Reverse bias harmonic distortion exceeds 60 dBc at 100 MHz, meeting stringent linearity requirements in diagnostic imaging front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage | 200 V - defines maximum DC or peak RF blocking capability in T/R switch applications |
| Reverse Current | <0.5 µA at 200 V - ensures minimal signal leakage and low intermodulation distortion |
| Series Resistance | 0.8–1.0 Ω at 100 MHz/50 mA - determines insertion loss in RF path when forward-biased |
| Carrier Lifetime | 2.5–3.5 µs - balances switching speed and low distortion in broadband attenuators |
| I-Region Width | 100 µm - engineered for optimal trade-off between breakdown voltage and RF resistance |
| Forward Voltage | 0.8–1.0 V at 50 mA - sets control current requirement for driver circuit design |
| Operating Temp | −65 °C to +175 °C - supports deployment in sealed, high-thermal-load medical enclosures |
Pinout & Package
UM7501F is supplied in a hermetically sealed, fused-in-glass "Style B" package with two axial leads: anode and cathode. The package uses metallurgically bonded construction for thermal stability and is compatible with automatic insertion equipment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to positive bias during RF conduction; requires low-inductance drive path |
| Cathode | Forward current exit / reverse voltage reference | Typically grounded or RF-shorted in switch designs; serves as thermal and electrical reference plane |
Key Features
| Feature | Design Value |
|---|---|
| Fully passivated PIN chip | Eliminates surface recombination, ensuring stable IR and long-term reliability under RF stress |
| Voidless, particle-free construction | Prevents internal arcing and premature failure in high-power pulsed MRI gradient drivers |
| Hermetic fused-in-glass seal | Maintains parameter stability across −65 °C to +175 °C and meets MIL-STD-750 HTRB screening |
| Low-loss, low-distortion RF performance | Delivers >60 dBc reverse-bias harmonic suppression at 100 MHz for clean spectral output |
| Compatible with automatic insertion | Enables high-yield, repeatable placement in automated assembly of medical RF subassemblies |
Applications
| MRI Gradient Driver Switching | CAT Scan RF Attenuation |
|---|---|
Use Scenario: High-speed switching of gradient coil drive signals in 1.5T and 3T MRI systems requiring precise timing and low distortion. IC Role / Device Role / Timing Role: RF power switch controlling current direction in bipolar gradient amplifiers. Use Value: 200 V rating and <0.5 µA leakage enable accurate gradient waveform fidelity with minimal baseline drift over thermal cycling. | Use Scenario: Variable RF attenuation in X-ray tube modulation circuits where signal integrity must be preserved across wide bandwidths. IC Role / Device Role / Timing Role: Voltage-controlled RF attenuator element in feedback-controlled beam intensity loops. Use Value: 2.5–3.5 µs carrier lifetime and 0.8–1.0 Ω RS support fast, linear attenuation response without harmonic generation. |
| Military Radar T/R Modules | Industrial RF Heating Control |
Use Scenario: Transmit/receive isolation in S-band radar front-ends operating under MIL-STD-750 environmental screening. IC Role / Device Role / Timing Role: High-reliability RF switch protecting receiver front-end during high-power transmit pulses. Use Value: Hermetic fused-in-glass packaging and HTRB qualification at 150 °C ensure field longevity in harsh deployed environments. | Use Scenario: Duty-cycle modulated RF power control in industrial plasma generators and induction heating inverters. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays in high-cycle, high-temperature RF power paths. Use Value: 10 W power dissipation at 25 °C stud temperature and −65 °C to +175 °C range support continuous operation in enclosed thermal chambers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UMX7501B | RoHS-compliant version with identical electrical specs and Style B package | Required for new medical device designs targeting EU regulatory compliance | Select UMX7501B when lead-free assembly and RoHS documentation are mandatory |
| UM7502F | 400 V reverse rating; otherwise identical construction, thermal, and RF parameters | Suitable for higher-voltage MRI gradient drivers or radar systems with elevated supply rails | Choose UM7502F only if system-level blocking voltage exceeds 200 V margin |
Compared with UMX7501B, UM7501F offers legacy compatibility without RoHS constraints; compared with UM7502F, it provides tighter voltage margin for cost-optimized 200 V systems while maintaining identical thermal and RF behavior.
Availability
UM7501F is available at Aetrix Electronics and suitable for MRI gradient switching, CAT scan RF attenuation, and military radar T/R modules requiring stable component supply across extended production lifecycles.
Supply support for UM7501F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and medical applications.
The UM7500 series was developed to deliver rugged, high-voltage PIN diodes for mission-critical RF switching in diagnostic imaging and radar systems where thermal stability and low distortion are non-negotiable.
FAQ
What is the maximum reverse voltage rating for UM7501F?
The UM7501F has a specified reverse voltage rating of 200 V at 0.5 µA leakage current. This rating is validated per MIL-STD-750 test methods and applies under steady-state DC or peak RF conditions. Exceeding 200 V may cause irreversible breakdown. The UM7501F datasheet confirms this value in the Voltage Ratings table on Page 1.
Does UM7501F require heatsinking in typical RF switch applications?
Yes - UM7501F is rated for 10 W power dissipation only when mounted to a 25 °C stud temperature, per Absolute Maximum Ratings. In continuous RF switching, thermal management via stud mounting to a heatsink is essential. Free-air operation limits dissipation to 1.5 W, making heatsinking mandatory for >1 W average RF power handling.
Is UM7501F RoHS compliant?
No - UM7501F is not RoHS compliant. It uses traditional leaded glass sealing and metallurgy. For RoHS-compliant alternatives, Microsemi specifies the UMX7501B variant, which maintains identical electrical and thermal performance while meeting EU Directive 2011/65/EU requirements.
What is the typical series resistance of UM7501F at 100 MHz?
The typical series resistance (RS) of UM7501F is 0.8–1.0 Ω when measured at 100 MHz and 50 mA forward bias, as confirmed in the Electrical Parameters table on Page 2 of the UM7500 datasheet. This value directly impacts insertion loss in RF switch paths and is stable across temperature due to metallurgically bonded construction.
Can UM7501F be used in surface-mount assemblies?
No - UM7501F is packaged in Style B (axial lead, fused-in-glass), not surface-mount. Microsemi offers the "SM" style for SMT use, but UM7501F specifically corresponds to Style B. For surface-mount equivalents, consider UM7501SM or UMX7501SM, which share the same 200 V rating and electrical specs but differ in footprint and termination.
UM7501F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 100V
- Current - Max:
- -
- Capacitance @ Vr, F:
- 1pF @ 100V, 1MHz
- Resistance @ If, F:
- 1Ohm @ 50mA, 100MHz
- Power Dissipation (Max):
- 10 W
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- -
UM7501F FAQ
1.How can I place an order for UM7501F through Aetrix?
Please submit a Request for Quotation (RFQ) for UM7501F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UM7501F reliable?
The price and inventory of UM7501F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM7501F is usually 5 days.
3.What payment methods are accepted for UM7501F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM7501F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UM7501F?
UM7501F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UM7501F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UM7501F?
For technical support, including UM7501F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM7501F requirements.
6.How does Aetrix verify that UM7501F is sourced from the original manufacturer or authorized distributors?
All UM7501F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM7501F meets industry standards.
7.What is the process for return or replacement of UM7501F?
All UM7501F units undergo pre-shipment inspection (PSI). If there is an issue with UM7501F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UM7501F part is unused and in its original packaging.
Return procedure for UM7501F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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