Microchip Technology UM7502F

Overview

UM7502F from Microsemi is a high-voltage, low-leakage RF power PIN diode designed for microwave switching and attenuator circuits in MRI systems, CAT scan equipment, and MIL-STD-750-compliant military transceivers. It features 200 V reverse voltage rating, <0.5 µA reverse current at rated voltage, 0.8–1.0 Ω series resistance at 100 MHz/50 mA, 2.5–3.5 µs carrier lifetime, and hermetic fused-in-glass construction.

For engineers reviewing the UM7502F datasheet, UM7502F pinout, UM7502F application, or UM7502F equivalent, key selection criteria include reverse voltage margin for pulsed RF systems, thermal resistance under stud-mount conditions (20 °C/W for Package D), harmonic distortion performance (≥60 dBc reverse bias), and compatibility with automatic insertion equipment in high-reliability medical and defense assemblies.

Technical Context

The UM7502F employs a fully passivated silicon PIN structure with precisely controlled 100 µm I-region width to achieve stable reverse characteristics and low distortion across 100 MHz–1 GHz. Its metallurgically bonded, thermally matched construction ensures reliable power dissipation up to 7.5 W at 25 °C stud temperature.

It delivers low-loss RF switching via low series resistance (0.8–1.0 Ω) and high parallel resistance (>100 kΩ at 100 V), while maintaining <0.5 µA leakage-critical for high-isolation switch designs in MRI gradient amplifiers and radar T/R modules.

Key Specifications

Pinout & Package

UM7502F is supplied in Style "D" package: hermetically sealed, fused-in-glass, stud-mounted metal case with anode and cathode terminals on opposite sides of the cylindrical body. Thermal path is optimized through the stud interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power PIN diode applications.

Compared with MADP-000907 and BAR63-03W, UM7502F uniquely supports 200 V bias with stud-mount thermal reliability and <0.5 µA leakage-making it irreplaceable in MRI gradient drivers and MIL-qualified T/R modules where voltage margin and long-term parametric stability are non-negotiable.

Availability

UM7502F is available at Aetrix Electronics and suitable for MRI gradient amplifier switching, CAT scan RF attenuation, and military radar T/R module design requiring stable component supply across extended production lifecycles.

Supply support for UM7502F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and medical markets.

The UM7500 series was developed specifically for high-power RF switching and attenuation in mission-critical imaging and radar systems where hermeticity, voltage margin, and thermal robustness are essential-exemplified by UM7502F's 200 V rating and MIL-STD-750 qualification.

FAQ

What is the maximum continuous power dissipation for UM7502F?

The UM7502F has a maximum continuous power dissipation of 7.5 W when mounted on a heatsink at 25 °C stud temperature (Package D). Derating is required above 25 °C per the typical thermal impedance curve on page 4 of the datasheet, reaching 0 W at 175 °C junction temperature.

Does UM7502F meet RoHS compliance requirements?

UM7502F itself is not RoHS-compliant due to its lead-containing glass seal and solder materials. For RoHS-compliant alternatives, Microsemi offers the UMX7502B variant-identical electrical specs but with lead-free packaging and processing validated per JEDEC J-STD-020.

What is the typical harmonic distortion performance of UM7502F at 100 MHz?

UM7502F achieves ≥60 dBc reverse-bias harmonic distortion and ≥80 dBc forward-bias harmonic distortion at 100 MHz, 30 W RF power, and 50 mA forward bias-key for MRI RF excitation fidelity and radar spectral cleanliness.

Can UM7502F be used in surface-mount applications?

No-UM7502F is packaged in Style "D", a stud-mounted, hermetic fused-in-glass metal can. For surface-mount equivalents, consider the UM7502SM (Style "SM") variant, which shares identical electrical specs but uses a ceramic SMD footprint compatible with reflow assembly.

How does UM7502F differ from UM7501F and UM7504F?

UM7502F is rated for 200 V reverse voltage, positioned between UM7501F (100 V) and UM7504F (400 V). All share identical construction, leakage (<0.5 µA), R_S (0.8–1.0 Ω), and thermal specs-but voltage rating determines safe operating area in pulsed RF bias networks.