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Home > Products > Discrete Semiconductor Products > Diodes > RF Diodes

Microchip Technology UM7504E

Name: UM7504E
Brand: Microchip Technology
SKU: UM7504E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UM7504E

Manufacturer:: Microchip Technology

Category:: RF Diodes

Package:: Axial

Datasheet:: UM7504E.pdf

Description:: SI PPIN HERMETIC GLASS AXIAL

Quantity:: RFQ Add To RFQ list

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Product details

Overview

UM7504E from Microsemi is a high-voltage, hermetically sealed power PIN diode designed for RF/microwave switching and attenuator circuits in MRI systems, CAT scanners, and military radar transceivers. It features 600 V reverse voltage rating, <0.5 µA reverse leakage at rated voltage, 0.8–1.0 Ω series resistance at 100 MHz/50 mA, 2.5–3.5 µs carrier lifetime, and metallurgically bonded fused-in-glass construction.

For engineers reviewing the UM7504E datasheet, UM7504E pinout, UM7504E application, or UM7504E equivalent, key selection criteria include reverse voltage margin, RF distortion performance (R2a/a ≥ 80 dBc), thermal resistance (θ_A = 20 °C/W for stud-mount "D" package), low-leakage stability under HTRB screening, and compatibility with automatic insertion equipment.

Technical Context

The UM7504E operates as a current-controlled RF switch/attenuator element where forward bias modulates series resistance (R_S) and reverse bias maximizes parallel resistance (R_P > 100 kΩ at 100 V). Its 100 µm I-region width and high carrier lifetime ensure low harmonic distortion and stable RF loss across 100 MHz–1 GHz.

Thermally, it uses a fused-in-glass, void-free, particle-free hermetic package with metallurgically bonded stud mounting (Style "D"), enabling 7.5 W continuous power dissipation at 25 °C stud temperature and operation from –65 °C to +175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
Reverse Voltage (V_R)	600 V - Supports high-power RF switching in MRI gradient amplifiers and pulsed radar transmitters without breakdown.
Reverse Leakage (I_R)	< 0.5 µA at 600 V - Ensures minimal signal distortion and DC bias drift in precision attenuator topologies.
Series Resistance (R_S)	0.8–1.0 Ω at 100 MHz/50 mA - Delivers low insertion loss <0.1 dB in 50 Ω RF switch paths.
Carrier Lifetime (τ)	2.5–3.5 µs - Enables fast RF switching speed while maintaining linearity for multi-tone signals.
Forward Harmonic Distortion	≥80 dBc at 100 MHz/30 W - Meets stringent IMD requirements in medical imaging RF front-ends.
Thermal Resistance (θ_A)	20 °C/W (stud temp) - Allows reliable 7.5 W continuous operation with standard heatsinking in compact enclosures.
I-Region Width	100 µm - Optimized thickness for trade-off between breakdown voltage and RF conductivity.

Pinout & Package

UM7504E is housed in Style "D" metallurgically bonded, fused-in-glass hermetic package with isolated stud mounting. The device has two terminals: anode and cathode, both accessible via axial leads soldered to a thermally conductive metal stud base.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point during RF conduction	Connected to RF input path in series switch configuration; requires low-inductance layout for <1 GHz operation.
Cathode	Forward current exit / reverse voltage terminal	Mounted to grounded heatsink via stud; provides thermal path and RF return reference in shunt switch designs.

Key Features

Feature	Design Value
Fused-in-glass hermetic seal	Prevents moisture ingress and long-term parameter drift in MRI and military environments per MIL-STD-750.
Metallurgically bonded stud	Enables direct thermal coupling to heatsink with no interface paste required, sustaining 7.5 W continuous power.
Passivated silicon chip	Eliminates surface recombination, ensuring stable R_P > 100 kΩ and leakage < 0.5 µA over lifetime.
Low-loss I-region design	100 µm width and 2.5–3.5 µs τ yield R_S ≤ 1.0 Ω and harmonic distortion ≥80 dBc at 100 MHz.
Automatic insertion compatibility	Standard axial lead geometry supports pick-and-place and wave soldering in high-reliability medical PCB assembly.

Applications

MRI Gradient Amplifier Switching	CAT Scan RF Attenuation
Use Scenario: High-speed switching of gradient coil drive signals in 1.5T–3T MRI systems requiring sub-microsecond transition and minimal harmonic generation. IC Role / Device Role / Timing Role: Series-connected RF switch controlling current flow into gradient coils during pulse sequences. Use Value: 600 V rating withstands transient flyback voltages; ≤1.0 Ω R_S ensures <0.1 dB insertion loss at 100 kHz–1 MHz gradient frequencies.	Use Scenario: Precision RF attenuation in CT scanner X-ray generator feedback loops operating at 100–500 kHz. IC Role / Device Role / Timing Role: Voltage-variable resistor in pi-network attenuators adjusting RF power delivery to detector arrays. Use Value: Stable R_P > 100 kΩ at 100 V enables >60 dB dynamic range; low leakage prevents calibration drift over 10-year service life.
Military Radar T/R Module	High-Power RF Test Fixture
Use Scenario: Transmit/receive switching in S-band airborne radar modules subjected to MIL-STD-750 HTRB screening at 150 °C. IC Role / Device Role / Timing Role: Hermetic, stud-mounted switch isolating LNA input during high-power transmit pulses. Use Value: 7.5 W power handling and 20 °C/W θ_A allow continuous duty cycling; 600 V rating covers 2× peak envelope voltage in pulsed operation.	Use Scenario: Reconfigurable load termination in automated RF production test benches for power amplifier validation. IC Role / Device Role / Timing Role: Thermally robust, low-distortion switch enabling rapid impedance state changes between 50 Ω and open-circuit conditions. Use Value: Fused-in-glass package survives repeated thermal cycling; ≥80 dBc harmonic suppression meets EN 61000-3-2 compliance testing requirements.

MRI Gradient Amplifier Switching

CAT Scan RF Attenuation

Use Scenario: High-speed switching of gradient coil drive signals in 1.5T–3T MRI systems requiring sub-microsecond transition and minimal harmonic generation.

IC Role / Device Role / Timing Role: Series-connected RF switch controlling current flow into gradient coils during pulse sequences.

Use Value: 600 V rating withstands transient flyback voltages; ≤1.0 Ω R_S ensures <0.1 dB insertion loss at 100 kHz–1 MHz gradient frequencies.

Use Scenario: Precision RF attenuation in CT scanner X-ray generator feedback loops operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Voltage-variable resistor in pi-network attenuators adjusting RF power delivery to detector arrays.

Use Value: Stable R_P > 100 kΩ at 100 V enables >60 dB dynamic range; low leakage prevents calibration drift over 10-year service life.

Military Radar T/R Module

High-Power RF Test Fixture

Use Scenario: Transmit/receive switching in S-band airborne radar modules subjected to MIL-STD-750 HTRB screening at 150 °C.

IC Role / Device Role / Timing Role: Hermetic, stud-mounted switch isolating LNA input during high-power transmit pulses.

Use Value: 7.5 W power handling and 20 °C/W θ_A allow continuous duty cycling; 600 V rating covers 2× peak envelope voltage in pulsed operation.

Use Scenario: Reconfigurable load termination in automated RF production test benches for power amplifier validation.

IC Role / Device Role / Timing Role: Thermally robust, low-distortion switch enabling rapid impedance state changes between 50 Ω and open-circuit conditions.

Use Value: Fused-in-glass package survives repeated thermal cycling; ≥80 dBc harmonic suppression meets EN 61000-3-2 compliance testing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
UM7504D	Same die, identical electrical specs, but Style "D" package uses non-isolated stud (anode tied to stud).	Requires circuit redesign if isolation between RF path and heatsink ground is mandatory.	Select UM7504E when galvanic isolation between RF signal path and thermal mount is required.
MACOM MADP-000907	600 V rating, 0.9 Ω R_S, but epoxy-encapsulated plastic package (non-hermetic); R_P = 50 kΩ typical.	Not qualified for MIL-STD-750 or medical long-life use; limited to commercial test equipment.	Choose UM7504E for hermetic reliability, HTRB screening, and >100 kΩ R_P in critical infrastructure.

Compared with UM7504D and MADP-000907, UM7504E uniquely combines 600 V isolation, hermetic fused-in-glass packaging, >100 kΩ R_P, and MIL-STD-750 qualification-making it the only option for MRI gradient switches and radar T/R modules demanding zero parameter drift over 15+ years.

Availability

UM7504E is available at Aetrix Electronics and suitable for MRI gradient amplifier switching, CAT scan RF attenuation, and military radar T/R module design requiring stable component supply across extended product lifecycles.

Supply support for UM7504E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and medical markets.

The UM7500 series was developed to deliver ultra-stable, high-voltage PIN diodes for mission-critical RF switching in MRI, radar, and industrial imaging systems where hermeticity and long-term leakage stability are non-negotiable.

FAQ

What is the maximum continuous power dissipation for UM7504E?

The UM7504E supports 7.5 W continuous power dissipation when mounted on a heatsink at 25 °C stud temperature, with thermal resistance θ_A = 20 °C/W. Derating is required above 25 °C per the typical curve on page 4 of the UM7500 datasheet. This rating assumes proper stud mounting and thermal interface contact.

Does UM7504E meet MIL-STD-750 reliability requirements?

Yes, UM7504E is qualified to MIL-STD-750 Method 1081 (HTRB) at 80% of rated voltage (480 V) and 150 °C for extended duration. Its fused-in-glass hermetic construction and passivated chip ensure compliance with screening requirements for military radar and avionics applications.

What is the difference between UM7504E and UM7504D?

UM7504E and UM7504D share identical electrical specifications and die, but differ in mechanical isolation: UM7504E features an electrically isolated stud (cathode only), whereas UM7504D ties the anode to the stud. This makes UM7504E mandatory for circuits requiring galvanic separation between RF signal path and thermal ground.

Is UM7504E RoHS compliant?

UM7504E is not RoHS compliant in its standard configuration due to lead content in the fused-in-glass hermetic seal. For RoHS-compliant alternatives, Microsemi offers the UMX7504B variant with lead-free glass formulation, which maintains identical electrical performance and package dimensions.

What RF frequency range is UM7504E optimized for?

UM7504E is characterized and optimized for RF operation from 100 MHz to 1 GHz, with published data for series resistance, parallel resistance, and harmonic distortion at 100 MHz, 500 MHz, and 1 GHz. Its 100 µm I-region and 2.5–3.5 µs carrier lifetime balance breakdown voltage and switching speed across this band.

UM7504E Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: UM7500

Package/Case:: Axial

Packaging:: Tray

Product Status:: Active

Diode Type:: PIN - Single

Voltage - Peak Reverse (Max):: 400V

Current - Max:: -

Capacitance @ Vr, F:: 1pF @ 100V, 1MHz

Resistance @ If, F:: 1Ohm @ 50mA, 100MHz

Power Dissipation (Max):: 10 W

Operating Temperature:: -65°C ~ 175°C

Grade:: -

Qualification:: -

Supplier Device Package:: Axial

UM7504E FAQ

1.How can I place an order for UM7504E through Aetrix?

Please submit a Request for Quotation (RFQ) for UM7504E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UM7504E reliable?

The price and inventory of UM7504E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM7504E is usually 5 days.

3.What payment methods are accepted for UM7504E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM7504E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UM7504E?

UM7504E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UM7504E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UM7504E?

For technical support, including UM7504E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM7504E requirements.

6.How does Aetrix verify that UM7504E is sourced from the original manufacturer or authorized distributors?

All UM7504E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM7504E meets industry standards.

7.What is the process for return or replacement of UM7504E?

All UM7504E units undergo pre-shipment inspection (PSI). If there is an issue with UM7504E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UM7504E part is unused and in its original packaging.

Return procedure for UM7504E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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