Microchip Technology UM7504F

Overview

UM7504F from Microsemi is a high-voltage, low-leakage RF power PIN diode designed for microwave switch and attenuator circuits in MRI systems and military radar front-ends. It features 600 V reverse voltage rating, <0.5 µA reverse current at rated voltage, 1.0 Ω typical series resistance at 100 MHz/50 mA, and 3.5 µs carrier lifetime - enabling stable high-power RF control up to 1 GHz.

For engineers reviewing the UM7504F datasheet, UM7504F pinout, UM7504F application, or UM7504F equivalent, key selection criteria include reverse voltage margin for pulsed RF operation, thermal resistance in stud-mount configurations, harmonic distortion performance at 30 W forward bias, and compatibility with MIL-STD-750 HTRB screening at 80% of 600 V.

Technical Context

The UM7504F employs a fully passivated silicon PIN chip with precisely controlled 100 µm I-region width, ensuring consistent carrier lifetime and low distortion across temperature. Its metallurgically bonded, fused-in-glass construction provides hermetic sealing and thermal stability under high-power RF stress.

Designed for DC–1 GHz operation, the device delivers 90 dBc third-order harmonic suppression at 100 MHz under 30 W forward bias and maintains >100 kΩ parallel resistance at 100 V reverse bias - critical for low-insertion-loss switching in transmit/receive modules.

Key Specifications

Pinout & Package

UM7504F is supplied in Style "F" package - a hermetically sealed, fused-in-glass stud-mount configuration with anode and cathode terminals on opposite sides of a metalized ceramic base. Thermal path is optimized via direct stud-to-heatsink contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power switch applications.

Compared with UM7504 and MA4P7475F, the UM7504F uniquely combines 600 V rating, hermetic glass seal, and MIL-STD-750 qualification - making it the only option qualified for high-reliability MRI and defense radar systems where long-term parameter stability under thermal stress is mandatory.

Availability

UM7504F is available at Aetrix Electronics and suitable for MRI gradient drivers, military radar T/R modules, and industrial RF heating systems requiring stable component supply over extended production lifecycles.

Supply support for UM7504F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and medical markets.

The UM7500 series was developed specifically for high-power RF switching in mission-critical systems - emphasizing hermetic reliability, MIL-qualified screening, and stable RF parameters across extreme temperature ranges.

FAQ

What is the maximum continuous power dissipation for UM7504F at 25°C stud temperature?

The UM7504F has a maximum continuous power dissipation of 10 W at 25°C stud temperature, achieved through its metallurgically bonded, fused-in-glass construction and 15°C/W thermal resistance. This rating assumes proper heatsinking and is validated per MIL-STD-750 thermal testing protocols. Exceeding this limit risks irreversible junction degradation in the UM7504F.

Does UM7504F meet MIL-STD-750 screening requirements?

Yes, UM7504F is qualified to MIL-STD-750 Method 1082 (High-Temperature Reverse Bias) at 80% of its rated 600 V reverse voltage (i.e., 480 V) for 1000 hours at +150°C. This qualification is enabled by its hermetic fused-in-glass package and passivated junction - key differentiators of the UM7504F versus commercial variants.

What is the typical harmonic distortion performance of UM7504F at 100 MHz?

The UM7504F delivers 90 dBc third-order harmonic suppression (R3a/a) at 100 MHz under 30 W forward bias and 50 mA DC bias conditions. This performance is directly attributable to its controlled 100 µm I-region width and high carrier lifetime, and is measured per the UM7504F datasheet test setup on page 2.

Can UM7504F be used in surface-mount PCB assemblies?

No, UM7504F uses a stud-mount Style "F" package requiring mechanical fastening to a heatsink and wire-bonded or soldered cathode lead. It is not compatible with reflow or wave soldering. For surface-mount alternatives, consider the UM7504SM variant - but note that UM7504F itself is exclusively a through-hole, stud-mounted device.

What is the I-region width specification for UM7504F?

The UM7504F has a nominal I-region width of 100 µm, tightly controlled during fabrication to ensure consistent carrier lifetime (2.5–3.5 µs), low distortion, and predictable series resistance. This dimension is fixed for the entire UM7500 family and is verified via process monitoring - not individual device testing - for every UM7504F lot.