Microchip Technology UM7506F
- Part No.:
- UM7506F
- Manufacturer:
- Microchip Technology
- Category:
- RF Diodes
- Package:
- -
- Datasheet:
-
UM7506F.pdf
- Description:
- SI PPIN HERMETIC MELF
- Quantity:
- Payment:

- Shipping:

Inventory:2,693
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Product details
Overview
UM7506F from Microsemi is a high-voltage, low-leakage RF PIN diode designed for microwave switch and attenuator circuits in MRI and CAT scan systems. It features 800 V reverse voltage rating, <0.5 µA reverse current at rated voltage, 1.0 Ω typical series resistance at 100 MHz/50 mA, and 3.5 µs carrier lifetime.
For engineers reviewing the UM7506F datasheet, UM7506F pinout, UM7506F application, or UM7506F equivalent, key selection criteria include reverse voltage margin, harmonic distortion performance (–90 dBc @ 100 MHz), thermal stability up to +175 °C, and hermetic fused-in-glass packaging for medical and military reliability.
Technical Context
The UM7506F employs a fully passivated silicon PIN structure with precisely controlled 100 µm I-region width to achieve stable reverse characteristics and low distortion. Its metallurgically bonded, fused-in-glass construction ensures void-free, particle-free hermeticity and thermal robustness under high-power RF duty cycles.
It operates across –65 °C to +175 °C with DC-to-1 GHz RF performance validated by measured Rs, Rp, and CT parameters. Reverse bias harmonic distortion is specified at –70 dBc (2nd/3rd order) at 0 dBm input, supporting low-intermodulation switching in sensitive receiver front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 800 V - Enables use in high-isolation RF switches handling >400 V peak RF signals without breakdown. |
| Reverse Current (IR) | <0.5 µA @ 800 V - Minimizes signal leakage and DC bias drift in precision attenuators. |
| Series Resistance (RS) | 1.0 Ω typ. @ 100 MHz/50 mA - Supports low-insertion-loss switching below 1 GHz. |
| Carrier Lifetime (τ) | 3.5 µs - Ensures fast RF switching speed while maintaining linearity in pulsed applications. |
| Total Capacitance (CT) | 1.0 pF @ 100 V/1 MHz - Reduces capacitive feedthrough in broadband switch designs. |
| Forward Voltage (VF) | 1.0 V max @ 50 mA - Low forward drop reduces control power and thermal load in bias networks. |
| Operating Temperature | –65 °C to +175 °C - Qualified for under-hood, MRI bore, and MIL-STD-750 HTRB screening. |
Pinout & Package
UM7506F is supplied in Style "F" package - a hermetically sealed, fused-in-glass, stud-mounted configuration with anode and cathode terminals on opposite ends of the cylindrical glass body. Thermal path is optimized via direct stud mounting to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Stud) | Positive RF/DC terminal | Electrically and thermally coupled to mounting surface; requires insulated mounting hardware when referenced to ground. |
| Cathode (Cap) | Negative RF/DC terminal | Top cap connection; used for RF signal routing or bias injection in series-switch topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Fully passivated PIN chip | Eliminates surface recombination, enabling stable RS and CT over temperature and lifetime. |
| Hermetic fused-in-glass construction | Prevents moisture ingress and metal migration, meeting MIL-STD-750 HTRB requirements at 150 °C. |
| Low harmonic distortion (–90 dBc) | Enables clean RF switching in MRI gradient coil drivers and CAT scan RF receivers without spurious generation. |
| Metallurgically bonded thermal interface | Provides 15 °C/W junction-to-stud thermal resistance, supporting 10 W continuous dissipation at 25 °C stud temp. |
| RoHS-compliant variants available | UMX7506F offers identical electrical specs with lead-free terminations for medical OEM compliance. |
Applications
| MRI Gradient Coil Switching | CAT Scan RF Receiver Attenuation |
|---|---|
Use Scenario: High-speed switching of gradient coil drive signals in 1.5T and 3T MRI systems requiring >500 V isolation and sub-µs settling. IC Role / Device Role / Timing Role: High-voltage RF switch element controlling current direction in bipolar gradient amplifiers. Use Value: 800 V rating and 3.5 µs carrier lifetime enable precise, low-distortion current reversal without arcing or intermodulation. | Use Scenario: Dynamic range control in ultra-low-noise RF front-ends of computed tomography detectors. IC Role / Device Role / Timing Role: Voltage-controlled RF attenuator core in LNA protection paths. Use Value: <0.5 µA leakage and –90 dBc harmonic distortion preserve SNR in sub-picoamp signal chains. |
| Military Radar T/R Module Switching | Industrial RF Plasma Generator Control |
Use Scenario: Transmit/receive isolation in S-band radar modules operating under MIL-STD-810 shock/vibe and extended temperature profiles. IC Role / Device Role / Timing Role: High-reliability SPDT switch in antenna duplexing networks. Use Value: Hermetic fused-in-glass package and HTRB qualification ensure operation at +175 °C ambient with no parameter shift. | Use Scenario: Duty-cycle modulation of 13.56 MHz RF power delivered to plasma chambers in semiconductor etch tools. IC Role / Device Role / Timing Role: Series-connected RF switch regulating forward power into matched loads. Use Value: 10 W continuous power dissipation and low RS minimize heating during 100% duty cycle operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MACOM MADP-000907 | 600 V VR, 0.35 Ω RS, SOT-27 package - lower voltage rating, surface-mount only. | Not suitable for >700 V MRI gradient switching; limited to PCB-based RF modules. | Select when board space is constrained and voltage stress remains below 600 V. |
| Qorvo QPD1005 | 1000 V VR, 1.2 Ω RS, ceramic-metal package - higher voltage but higher series resistance. | Better for ultra-high-voltage radar; trade-off in insertion loss above 500 MHz. | Select when reverse voltage margin >200 V is critical and 1.2 Ω RS is acceptable. |
Compared with MADP-000907 and QPD1005, UM7506F uniquely balances 800 V capability, 1.0 Ω RS, and hermetic stud-mount packaging-making it optimal for medical imaging systems where voltage margin, thermal management, and long-term reliability are non-negotiable.
Availability
UM7506F is available at Aetrix Electronics and suitable for MRI gradient control, CAT scan RF attenuation, and military radar T/R module design requiring stable component supply across extended temperature and high-reliability lifecycles.
Supply support for UM7506F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and medical markets.
The UM7500 series was engineered specifically for high-power RF switching and attenuation in mission-critical imaging and radar systems, emphasizing hermeticity, voltage endurance, and distortion control.
FAQ
What is the maximum continuous power dissipation for UM7506F?
The UM7506F supports 10 W continuous power dissipation when mounted to a heatsink at 25 °C stud temperature, with thermal resistance θA = 15 °C/W. Derating is required above 25 °C per the typical curve on page 4 of the datasheet, reaching 5 W at 125 °C stud temperature. This rating assumes proper stud mounting and thermal interface material.
Does UM7506F meet MIL-STD-750 test requirements?
Yes, UM7506F is qualified to MIL-STD-750 Method 1082 (High-Temperature Reverse Bias - HTRB) at 80% of rated voltage (640 V) for 1000 hours at +150 °C. This qualification confirms long-term stability of reverse leakage and junction integrity under sustained thermal-electrical stress, as documented in the original Microsemi datasheet Rev. 0.
What is the harmonic distortion performance of UM7506F in reverse bias?
In reverse bias, UM7506F delivers –70 dBc typical 2nd- and 3rd-order harmonic distortion at 100 MHz and 0 dBm input power. This low distortion level is achieved through precise I-region doping and passivation, making UM7506F suitable for receiver front-end switching where spurious signal generation must be minimized.
Is UM7506F RoHS compliant?
The standard UM7506F is not RoHS compliant due to leaded glass sealing; however, Microsemi offers the RoHS-compliant variant UMX7506F with identical electrical and thermal specifications. UMX7506F uses lead-free glass frit and terminations, certified to EU RoHS Directive 2011/65/EU Annex II.
What package styles are available for UM7506F?
UM7506F is manufactured exclusively in Style "F": a hermetically sealed, fused-in-glass, stud-mounted package with axial anode (stud) and cathode (cap) terminals. Unlike Styles "B", "C", or "SM", Style "F" is optimized for high-power thermal conduction and high-voltage standoff in medical and military chassis-mount applications.
UM7506F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 600V
- Current - Max:
- -
- Capacitance @ Vr, F:
- 1pF @ 100V, 1MHz
- Resistance @ If, F:
- 1Ohm @ 50mA, 100MHz
- Power Dissipation (Max):
- 10 W
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- -
UM7506F FAQ
1.How can I place an order for UM7506F through Aetrix?
Please submit a Request for Quotation (RFQ) for UM7506F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UM7506F reliable?
The price and inventory of UM7506F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM7506F is usually 5 days.
3.What payment methods are accepted for UM7506F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM7506F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UM7506F?
UM7506F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UM7506F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UM7506F?
For technical support, including UM7506F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM7506F requirements.
6.How does Aetrix verify that UM7506F is sourced from the original manufacturer or authorized distributors?
All UM7506F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM7506F meets industry standards.
7.What is the process for return or replacement of UM7506F?
All UM7506F units undergo pre-shipment inspection (PSI). If there is an issue with UM7506F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UM7506F part is unused and in its original packaging.
Return procedure for UM7506F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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