Microchip Technology UM7506SM

Overview

UM7506SM from Microsemi is a high-voltage, surface-mount power PIN diode designed for RF/microwave switching and attenuation in MRI, CAT scan, and military radar systems. It features 800 V reverse voltage rating, 7.5 W power dissipation at 25 °C end-cap temperature, 0.8–1.0 Ω series resistance at 100 MHz/50 mA, <0.5 µA reverse leakage, and 2.5–3.5 µs carrier lifetime.

For engineers reviewing the UM7506SM datasheet, UM7506SM pinout, UM7506SM application, or UM7506SM equivalent, key selection criteria include RF distortion performance (−80 to −90 dBc harmonic suppression), hermetic fused-in-glass construction, RoHS-compliant SMT package, and MIL-STD-750 qualification readiness for high-reliability medical and defense deployments.

Technical Context

The UM7506SM employs a fully passivated silicon PIN chip with precisely controlled 100 µm I-region width, enabling stable reverse characteristics and low distortion across 100 MHz–1 GHz bands. Its metallurgically bonded, thermally matched construction ensures reliable thermal transfer under pulsed RF loads up to 35 kW.

Designed for high-isolation RF switch and variable attenuator topologies, the device delivers low forward series resistance (0.8–1.0 Ω) and high parallel resistance (>100 kΩ at 100 V), supporting low-loss signal routing and precise RF power control in high-end imaging and electronic warfare subsystems.

Key Specifications

Pinout & Package

UM7506SM uses a hermetically sealed, fused-in-glass surface-mount package with two terminals: anode and cathode. The package conforms to Microsemi's "Style SM" mechanical footprint (Page 7–8), optimized for reflow soldering and high-reliability automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Compared with MADP-000907 and QPD1005, UM7506SM uniquely combines 800 V rating, 7.5 W SMT power handling, fused-in-glass hermeticity, and documented MIL-STD-750 readiness-making it the only choice for certified MRI gradient drivers and ruggedized defense T/R modules.

Availability

UM7506SM is available at Aetrix Electronics and suitable for MRI gradient driver switching, CAT scan RF power control, and military radar T/R module protection requiring stable component supply across extended production lifecycles.

Supply support for UM7506SM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and medical markets.

The UM7500 series was developed to deliver ultra-stable, high-voltage PIN diodes for mission-critical RF switching and attenuation in MRI, CT, and electronic warfare systems where hermeticity, leakage control, and thermal robustness are non-negotiable.

FAQ

What is the maximum reverse voltage rating for UM7506SM?

The UM7506SM has a specified reverse voltage rating of 800 V at 0.5 µA leakage current. This value is confirmed in the Absolute Maximum Ratings table on Page 1 of the official Microsemi UM7500 datasheet (Rev. 0, 2005). The 800 V rating applies specifically to the UM7506 variant within the UM7500 family and is validated under standard test conditions at 25 °C.

Does UM7506SM meet MIL-STD-750 requirements?

Yes, the UM7506SM is capable of meeting all requirements of MIL-STD-750, including High-Temperature Reverse Bias (HTRB) screening at 80% of rated voltage (640 V) and 150 °C, as stated in the Description section on Page 1 of the UM7500 datasheet. While final qualification testing must be performed per customer program, the device's fused-in-glass construction and passivated chip design are explicitly engineered for this standard.

What is the thermal resistance (θ_A) for UM7506SM?

The UM7506SM has a thermal resistance of 20 °C/W when measured at 25 °C end-cap temperature, as specified in the Absolute Maximum Ratings table under Package "SM". This value reflects junction-to-end-cap thermal path performance and is critical for calculating safe operating area in continuous or pulsed RF applications using the UM7506SM.

Is UM7506SM RoHS compliant?

Yes, RoHS-compliant packaging is available for the UM7506SM family via designated part numbers such as UMX7506B, as noted in the Applications/Benefits section on Page 1 of the UM7500 datasheet. Standard UM7506SM units may not be RoHS-compliant unless ordered under the UMX prefix; confirm compliance status with order-specific documentation before use in regulated medical or consumer devices.

What is the typical carrier lifetime (τ) of UM7506SM?

The UM7506SM exhibits a typical carrier lifetime (τ) of 2.5–3.5 µs at 10 mA forward current, as published in the Electrical Parameters table on Page 2 of the UM7500 datasheet. This parameter directly influences switching speed and harmonic distortion performance, and is tightly controlled via I-region width (100 µm) during fabrication of the UM7506SM die.