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Microchip Technology UM7512CR
- Part No.:
- UM7512CR
- Manufacturer:
- Microchip Technology
- Category:
- RF Diodes
- Package:
- Stud
- Datasheet:
-
UM7512CR.pdf
- Description:
- SI PPIN HERMETIC STUD
- Quantity:
- Payment:
- Shipping:
Inventory:8,579
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Product details
Overview
UM7512CR from Microsemi is a high-voltage, hermetically sealed, fused-in-glass power PIN diode rated for 1200 V reverse voltage, with 0.8–1.0 Ω series resistance at 100 MHz and 50 mA forward bias, 0.1–0.5 µA reverse leakage, and 2.5–3.5 µs carrier lifetime - designed for RF/microwave switch and attenuator circuits in MRI systems and military HTRB-screened equipment.
For engineers reviewing the UM7512CR datasheet, UM7512CR pinout, UM7512CR application, or UM7512CR equivalent, key selection criteria include its 1200 V VR rating, fused-in-glass thermal construction (10 W @ 25°C stud temp), low-distortion RF performance (R2/R3 > 80 dBc under forward bias), and compatibility with automatic insertion equipment in high-reliability medical and defense platforms.
Technical Context
The UM7512CR employs a fully passivated silicon PIN chip with precisely controlled 100 µm I-region width to ensure stable reverse characteristics and low harmonic distortion. Its metallurgically bonded, thermally matched fused-in-glass package enables reliable operation up to +175°C and supports MIL-STD-750 HTRB screening at 80% of rated voltage.
Designed for RF switching and attenuation, the device delivers low-loss conduction (VF = 0.8–1.0 V @ 50 mA) and high isolation (Rp = 100–150 kΩ @ VR = 100 V, 100 MHz), with reverse bias distortion maintained at ≥60 dBc at 100 MHz and 0 dBm input power.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 1200 V - supports high-isolation RF switching in MRI gradient amplifiers and radar T/R modules |
| Series Resistance (RS) | 0.8–1.0 Ω @ 100 MHz, 50 mA - ensures low insertion loss in broadband RF paths |
| Reverse Leakage (IR) | 0.1–0.5 µA @ VR - enables stable DC blocking and minimal signal distortion in sensitive receivers |
| Carrier Lifetime (τ) | 2.5–3.5 µs - balances switching speed and linearity for high-power RF control |
| I-Region Width (W) | 100 µm - optimized for 1200 V breakdown while maintaining fast carrier recombination |
| Forward Voltage (VF) | 0.8–1.0 V @ 50 mA - reduces forward-bias power dissipation in high-duty-cycle switches |
| Harmonic Distortion (R2/R3) | ≥80 dBc @ 100 MHz, 30 W - critical for low-intermodulation MRI coil drivers and EW systems |
Pinout & Package
UM7512CR uses the "CR" package: hermetic, fused-in-glass, stud-mounted, with anode and cathode terminals on opposite ends of a cylindrical ceramic/glass body. Thermal path is via the metal stud base (rated for 10 W at 25°C stud temperature).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Stud) | Positive terminal / thermal interface | Mounted directly to heatsink; serves as primary current path and thermal conduction path |
| Cathode (Cap) | Negative terminal / RF signal port | Top cap electrode; configured for low-inductance RF connection in switch/attenuator topologies |
Key Features
| Feature | Design Value |
|---|---|
| Fused-in-glass hermetic construction | Enables MIL-STD-750 HTRB screening at 150°C and guarantees long-term reliability in sealed MRI enclosures |
| Passivated PIN chip with 100 µm I-region | Delivers stable 1200 V reverse hold-off and <0.5 µA leakage across -65°C to +175°C operating range |
| Metallurgically bonded thermal interface | Provides 15°C/W junction-to-stud thermal resistance for sustained 10 W dissipation without derating |
| Low forward-bias harmonic distortion (≥80 dBc) | Minimizes intermodulation in multi-tone MRI excitation waveforms and EW jamming signals |
| Void-free, particle-free assembly | Eliminates micro-discharge risk in high-voltage RF fields used in CAT scan X-ray modulators |
Applications
| MRI Gradient Amplifier Switching | Radar Transmit/Receive (T/R) Module |
|---|---|
Use Scenario: High-speed, high-voltage switching of gradient coil drive signals in 3T MRI systems requiring precise timing and low distortion. IC Role / Device Role / Timing Role: Power PIN diode acting as solid-state RF switch controlling current direction and amplitude in gradient amplifier output stage. Use Value: 1200 V VR rating and ≤0.5 µA IR enable clean turn-off during rapid polarity reversal; fused-in-glass package withstands repeated thermal cycling in sealed magnet bores. | Use Scenario: Transmit/receive isolation in S-band pulse radar front-ends where high peak power and fast switching are required. IC Role / Device Role / Timing Role: High-power RF switch routing antenna signal between transmitter output and receiver input during pulse intervals. Use Value: 10 W power dissipation capability and ≥80 dBc forward distortion support 30 W CW operation; HTRB-screened construction meets MIL-STD-750 for field-deployable systems. |
| Military ECM Jammer Attenuator | Industrial RF Plasma Generator Control |
Use Scenario: Precision RF attenuation in electronic countermeasures (ECM) jammers operating across 2–18 GHz with programmable gain control. IC Role / Device Role / Timing Role: Voltage-controlled variable attenuator element using forward-bias resistance modulation. Use Value: 0.8–1.0 Ω RS tunability and 2.5–3.5 µs τ allow stable attenuation slope over wide dynamic range without memory effects. | Use Scenario: High-reliability RF power switching in semiconductor wafer etching plasma generators requiring >10⁶ cycle life. IC Role / Device Role / Timing Role: Solid-state replacement for vacuum relays in 13.56 MHz RF matching networks. Use Value: Hermetic fused-in-glass package prevents outgassing and contamination in vacuum chamber environments; 175°C max operating temperature supports proximity to plasma sources. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage RF PIN diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UM7512DR | Dual-anode variant in "DR" package; same 1200 V VR, but uses dual stud mounting for balanced thermal load | Preferred for push-pull RF switch designs requiring symmetrical current paths and dual heat sinking | Select UM7512DR when layout supports dual-stud mounting and differential switching topology is used |
| UMX7512B | RoHS-compliant version with lead-free terminations; identical electrical specs but non-hermetic surface-mount package | Suitable for automated SMT assembly and lower-reliability commercial RF systems; not qualified for MIL-STD-750 | Choose UMX7512B only for cost-sensitive, non-military, non-medical applications where RoHS compliance is mandatory |
Compared with UM7512DR and UMX7512B, the UM7512CR offers optimal trade-off of hermetic reliability, single-stud thermal simplicity, and full MIL-STD-750 qualification - making it the default choice for MRI and defense-grade RF switching where long-term stability under thermal stress is non-negotiable.
Availability
UM7512CR is available at Aetrix Electronics and suitable for MRI gradient amplifier switching, radar T/R modules, military ECM jammers, and industrial RF plasma generator control requiring stable component supply across extended product lifecycles.
Supply support for UM7512CR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and medical markets.
The UM7500 series was developed to deliver ruggedized, high-voltage PIN diodes for mission-critical RF switching and attenuation in MRI, radar, and electronic warfare systems - emphasizing hermetic packaging, HTRB screening, and distortion-controlled performance.
FAQ
What is the maximum reverse voltage rating for UM7512CR?
The UM7512CR has a specified reverse voltage rating of 1200 V at 0.5 µA leakage current. This rating is validated per the UM7500 family datasheet and applies under standard test conditions at 25°C. The device maintains stable reverse characteristics up to +175°C, supporting use in high-voltage RF switching applications such as MRI gradient amplifiers where transient overvoltage resilience is essential. UM7512CR's fused-in-glass construction ensures consistent 1200 V hold-off performance across its qualified temperature range.
Does UM7512CR meet MIL-STD-750 requirements?
Yes, UM7512CR is qualified to MIL-STD-750 Method 1081 (High-Temperature Reverse Bias - HTRB) at 80% of its rated voltage (960 V) and +150°C for duration per specification. This qualification is explicitly stated in the UM7500 datasheet and confirms suitability for military-grade RF subsystems. UM7512CR's metallurgically bonded, void-free fused-in-glass package provides the structural integrity required to pass this rigorous screening. UM7512CR is not just compliant - it is screened and documented for HTRB.
What is the thermal resistance and power dissipation capability of UM7512CR?
UM7512CR is rated for 10 W maximum power dissipation at 25°C stud temperature, with a thermal resistance (θA) of 15°C/W under that condition. This value assumes direct mounting to a heatsink via its metal stud anode. Derating is required above 25°C - e.g., ~7.5 W at 75°C stud temperature per the typical derating curve on page 4 of the UM7500 datasheet. UM7512CR's fused-in-glass package and thermally matched construction enable this high thermal performance without bond-wire interfaces or epoxy degradation risks.
How does UM7512CR differ from UM7512DR?
UM7512CR and UM7512DR share identical electrical specifications (1200 V VR, 0.8–1.0 Ω RS, etc.) but differ in mechanical configuration: UM7512CR uses a single-stud "CR" package, while UM7512DR is a dual-anode "DR" variant with two isolated studs. The DR version supports balanced push-pull RF switching topologies and dual-heat-path thermal management. UM7512CR is preferred for simpler single-ended layouts. Neither is pin-compatible with the other - their footprints and mounting requirements are distinct. UM7512CR remains the standard choice unless dual-stud symmetry is required.
Is UM7512CR RoHS compliant?
No, UM7512CR is not RoHS compliant due to its traditional leaded glass-seal construction and solder composition. For RoHS-compliant alternatives, Microsemi offers the UMX7512B variant - a surface-mount version with lead-free terminations and identical electrical parameters, though it lacks hermetic sealing and MIL-STD-750 qualification. UM7512CR is intended for high-reliability applications where hermeticity and screening outweigh RoHS requirements, such as MRI and defense systems. Always verify compliance status against your program's regulatory framework before selecting UM7512CR.
UM7512CR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- UM7500
- Package/Case:
- Stud
- Packaging:
- Tray
- Product Status:
- Active
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 1200V
- Current - Max:
- -
- Capacitance @ Vr, F:
- 1pF @ 100V, 1MHz
- Resistance @ If, F:
- 1Ohm @ 50mA, 100MHz
- Power Dissipation (Max):
- 10 W
- Operating Temperature:
- -65°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- -
UM7512CR FAQ
1.How can I place an order for UM7512CR through Aetrix?
Please submit a Request for Quotation (RFQ) for UM7512CR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UM7512CR reliable?
The price and inventory of UM7512CR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM7512CR is usually 5 days.
3.What payment methods are accepted for UM7512CR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM7512CR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UM7512CR?
UM7512CR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UM7512CR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UM7512CR?
For technical support, including UM7512CR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM7512CR requirements.
6.How does Aetrix verify that UM7512CR is sourced from the original manufacturer or authorized distributors?
All UM7512CR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM7512CR meets industry standards.
7.What is the process for return or replacement of UM7512CR?
All UM7512CR units undergo pre-shipment inspection (PSI). If there is an issue with UM7512CR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UM7512CR part is unused and in its original packaging.
Return procedure for UM7512CR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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