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Microchip Technology UM7514SM

Part No.:
UM7514SM
Manufacturer:
Microchip Technology
Category:
RF Diodes
Package:
SQ-MELF
Datasheet:
AetrixUM7514SM.pdf
Description:
SI PPIN HERMETIC MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,875

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Product details

Overview

UM7514SM from Microsemi is a high-voltage, surface-mount power PIN diode designed for RF/microwave switching and attenuation in MRI, CAT scan, and military radar systems. It features 1400 V reverse voltage rating, ≤0.5 µA reverse leakage at rated voltage, 0.8–1.0 Ω series resistance at 100 MHz/50 mA, 2.5–3.5 µs carrier lifetime, and 100–150 kΩ parallel resistance at 100 V/100 MHz.

For engineers reviewing the UM7514SM datasheet, UM7514SM pinout, UM7514SM application, or UM7514SM equivalent, key selection criteria include reverse voltage margin for pulsed RF systems, low harmonic distortion (R2/R3 ≥80 dBc under forward bias), thermal stability up to +175 °C, and hermetic fused-in-glass construction for high-reliability medical and defense deployments.

Technical Context

The UM7514SM implements a fully passivated silicon PIN structure with precisely controlled 100 µm I-region width, enabling stable reverse characteristics and low leakage across temperature. Its metallurgically bonded, thermally matched construction ensures reliable power dissipation up to 7.5 W at 25 °C end-cap temperature.

Designed for RF switch/attenuator circuits, it delivers low-loss operation at 100 MHz (typical Rs = 0.9 Ω) and maintains harmonic distortion suppression of ≥80 dBc (R2a/a, R3a/a) under 30 W forward-biased RF conditions - critical for MRI gradient coil drivers and T/R module isolation.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)1400 V - supports high-voltage RF switching in MRI transmit chains without breakdown risk
Reverse Leakage (IR)≤0.5 µA @ 1400 V - ensures minimal signal distortion and DC offset in precision attenuators
Series Resistance (RS)0.8–1.0 Ω @ 100 MHz/50 mA - enables low insertion loss in broadband RF switches
Carrier Lifetime (τ)2.5–3.5 µs - balances switching speed and charge storage for optimized RF linearity
Parallel Resistance (RP)100–150 kΩ @ 100 V/100 MHz - provides high off-state isolation in microwave control circuits
Thermal Power Dissipation7.5 W @ 25 °C end-cap temperature - sustains continuous operation in compact SMT layouts
Operating Temperature−65 °C to +175 °C - qualified for harsh-environment military and industrial embedded use

Pinout & Package

UM7514SM uses a hermetically sealed, fused-in-glass surface-mount package (Style "SM") with two terminals: anode and cathode. The package is RoHS-compliant and compatible with automated placement equipment.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnects to RF source or driver stage in series-switch configurations
CathodeForward current exit / reverse voltage terminalGrounded or biased node in shunt-switch topologies; withstands full 1400 V reverse potential

Key Features

FeatureDesign Value
Fully passivated PIN chipEliminates surface contamination-induced leakage drift over time and temperature
Void-less, particle-free constructionPrevents internal arcing and premature failure under high RF peak power
Hermetic fused-in-glass sealingEnsures long-term reliability in humid or sterilized medical environments (e.g., MRI gantry)
Metallurgically bonded, thermally matched structureMinimizes thermal stress cycling fatigue during repeated RF pulse operation
Low forward-bias harmonic distortion≥80 dBc at 100 MHz/30 W - preserves signal fidelity in wideband imaging systems

Applications

MRI Gradient Coil DriverCAT Scan High-Voltage Attenuator

Use Scenario: High-speed, high-power switching in MRI gradient amplifier output stages to control magnetic field slew rate.

IC Role / Device Role / Timing Role: Power PIN diode used as series RF switch to enable/disable gradient coil excitation pulses.

Use Value: 1400 V rating and 7.5 W dissipation allow safe operation under transient overvoltage; low Rs minimizes heating during rapid pulse trains.

Use Scenario: Precision RF attenuation in X-ray generator feedback loops for dose calibration stability.

IC Role / Device Role / Timing Role: Voltage-controlled variable attenuator element in closed-loop RF amplitude regulation circuitry.

Use Value: Stable Rp >100 kΩ and <0.5 µA IR ensure repeatable attenuation accuracy across temperature and lifetime.

Military Radar T/R ModuleIndustrial RF Plasma Generator

Use Scenario: Transmit/receive isolation switching in airborne radar front-ends operating under MIL-STD-750 HTRB screening.

IC Role / Device Role / Timing Role: High-isolation shunt switch protecting LNA input during high-power transmit bursts.

Use Value: Hermetic fused-in-glass package and −65 °C to +175 °C range meet full military environmental qualification requirements.

Use Scenario: RF power control in semiconductor wafer etching plasma sources requiring stable 100 MHz switching.

IC Role / Device Role / Timing Role: Series-connected RF switch modulating delivered power to plasma chamber electrodes.

Use Value: 2.5–3.5 µs carrier lifetime enables clean turn-on/turn-off transitions without RF overshoot or ringing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage RF PIN diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
UMX7514BSame 1400 V rating and SM package, but RoHS-compliant lead-free finish per Microsemi's UMX prefix designationRequired where lead-free assembly or medical device regulatory compliance (IEC 60601-1) mandates RoHS packagingSelect UMX7514B when solder process requires Pb-free termination or formal RoHS documentation is required
QPD10051500 V rating, 0.7 Ω RS, but TO-272 package - not surface-mount; higher thermal resistance (θJA = 35 °C/W)Better voltage headroom but incompatible with automated SMT lines; suited for through-hole prototyping or legacy board upgradesChoose QPD1005 only if board layout allows through-hole mounting and voltage margin >100 V is critical

Compared with UMX7514B, UM7514SM offers identical electrical performance but lacks formal RoHS certification; versus QPD1005, UM7514SM enables compact SMT integration and lower thermal impedance, though with 100 V less voltage headroom.

Availability

UM7514SM is available at Aetrix Electronics and suitable for MRI gradient drivers, CAT scan RF attenuators, and military radar T/R modules requiring stable component supply, long-lifecycle assurance, and traceable sourcing for Class III medical and defense programs.

Supply support for UM7514SM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and RF components for aerospace, defense, and medical markets.

The UM7500 series was engineered specifically for high-power RF switching and attenuation in mission-critical imaging and radar systems, emphasizing hermeticity, voltage robustness, and thermal resilience.

FAQ

What is the maximum reverse voltage rating for UM7514SM?

The UM7514SM has a specified reverse voltage rating of 1400 V at 0.5 µA leakage current. This rating is validated per MIL-STD-750 test methods and applies under steady-state DC or low-duty-cycle RF conditions. Operation above this voltage risks irreversible junction breakdown. Derating is recommended for pulsed RF applications with high dv/dt transients.

Does UM7514SM meet RoHS requirements?

UM7514SM is not RoHS-compliant in its standard configuration. Microsemi offers the functionally identical UMX7514B variant with lead-free terminations and full RoHS documentation. For medical or consumer deployments requiring RoHS certification, UMX7514B must be selected instead of UM7514SM.

What is the thermal resistance of UM7514SM?

UM7514SM has a thermal resistance of 20 °C/W from end-cap to ambient (measured with 25 °C end-cap temperature). This value assumes proper PCB copper pour and solder joint integrity. At 7.5 W dissipation, the end-cap temperature rise is 150 °C above ambient - consistent with its +175 °C max operating limit.

Can UM7514SM be used in automatic SMT assembly lines?

Yes, UM7514SM is explicitly designed for compatibility with automated insertion equipment. Its Style "SM" footprint, defined on Microsemi Page 8, supports standard pick-and-place nozzles and reflow profiles. The fused-in-glass body resists mechanical stress during handling, and the terminals accept standard SnPb or lead-free solder pastes.

How does UM7514SM achieve low harmonic distortion?

UM7514SM achieves ≥80 dBc forward-bias harmonic distortion (R2a/a, R3a/a) at 100 MHz/30 W via precise 100 µm I-region width control and high carrier lifetime (2.5–3.5 µs), which minimize nonlinear charge modulation. Its fully passivated chip surface also suppresses surface-state-induced intermodulation in high-dynamic-range MRI and radar waveforms.

UM7514SM Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
UM7500
Package/Case:
SQ-MELF
Packaging:
Tray
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
1400V
Current - Max:
-
Capacitance @ Vr, F:
1pF @ 100V, 1MHz
Resistance @ If, F:
1Ohm @ 50mA, 100MHz
Power Dissipation (Max):
10 W
Operating Temperature:
-65°C ~ 175°C
Grade:
-
Qualification:
-
Supplier Device Package:
-

UM7514SM FAQ

1.How can I place an order for UM7514SM through Aetrix?

Please submit a Request for Quotation (RFQ) for UM7514SM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UM7514SM reliable?

The price and inventory of UM7514SM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UM7514SM is usually 5 days.

3.What payment methods are accepted for UM7514SM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UM7514SM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UM7514SM?

UM7514SM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UM7514SM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UM7514SM?

For technical support, including UM7514SM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UM7514SM requirements.

6.How does Aetrix verify that UM7514SM is sourced from the original manufacturer or authorized distributors?

All UM7514SM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UM7514SM meets industry standards.

7.What is the process for return or replacement of UM7514SM?

All UM7514SM units undergo pre-shipment inspection (PSI). If there is an issue with UM7514SM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UM7514SM part is unused and in its original packaging.

Return procedure for UM7514SM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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