My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VBUS03N1-DD1HG3-08
- Part No.:
- VBUS03N1-DD1HG3-08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- 0402 (1006 Metric)
- Datasheet:
-
VBUS03N1-DD1HG3-08.pdf
- Description:
- 3.3V;IR=0.1UA;IP=4A;P=90W;CD=0.4
- Quantity:
- Payment:
- Shipping:
Inventory:8,510
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VBUS03N1-DD1HG3-08 from Vishay Semiconductors is a bidirectional symmetrical (BiSy) ESD protection diode in DFN1006-2B package, designed for single-line high-speed data line protection. It delivers ±16 kV IEC 61000-4-2 contact/air discharge immunity, 0.36 pF typical load capacitance, <0.1 μA reverse leakage at 3.3 V, and clamps transients to ≤21 V at 4 A peak pulse current - enabling use in USB 3.0, HDMI, and Thunderbolt interfaces.
For engineers reviewing the VBUS03N1-DD1HG3-08 datasheet, VBUS03N1-DD1HG3-08 pinout, VBUS03N1-DD1HG3-08 application, or VBUS03N1-DD1HG3-08 equivalent, key selection criteria include ultra-low capacitance for signal integrity, AEC-Q101 qualification status, DFN1006-2B footprint compatibility, and ±3.3 V working voltage range for modern low-voltage I/O rails.
Technical Context
The VBUS03N1-DD1HG3-08 implements a symmetrical Zener-based clamping structure optimized for bidirectional transient suppression without polarity dependency. Its DFN1006-2B package features ultra-short internal leads and exposed copper lead frame, minimizing parasitic inductance (<0.3 nH) and enabling sub-nanosecond response to ESD events.
It operates within a ±3.3 V working range with reverse stand-off voltage (VRWM) of 3.3 V and breakdown voltage (VBR) of 7–10 V at 1 mA. Clamping performance is characterized per IEC 61000-4-5 (8/20 μs), delivering 18–21 V VC at IPPM = 4 A and dynamic resistance (RDYN) of 1.4 Ω measured via TLP.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating | ±16 kV contact & air discharge (IEC 61000-4-2) - meets automotive and industrial system-level ESD requirements without external shielding. |
| Load Capacitance | 0.36 pF typ. at 0 V / 1 MHz - preserves signal integrity up to 10+ Gbps in USB 3.0/Thunderbolt 3 differential pairs. |
| Reverse Stand-off Voltage | 3.3 V - matches standard I/O rail voltages for smartphones, tablets, and portable computing interfaces. |
| Peak Pulse Current | 4 A (8/20 μs, IEC 61000-4-5) - sustains multiple high-energy surges without degradation in compact layout. |
| Clamping Voltage | ≤21 V at 4 A - ensures protected ICs remain below absolute maximum ratings during worst-case transients. |
| Leakage Current | <0.1 μA at VRWM = 3.3 V - avoids DC loading on high-impedance data lines and preserves battery life in always-on ports. |
| Package | DFN1006-2B (1.0 × 0.6 × 0.4 mm) - enables placement directly at connector entry point with minimal PCB area and thermal mass. |
Pinout & Package
VBUS03N1-DD1HG3-08 uses the DFN1006-2B surface-mount package: 1.0 mm × 0.6 mm body, 0.4 mm max height, cathode marked by bar on top surface. The two terminals are symmetrical and non-polarized.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode/Cathode (symmetrical) | Either terminal connects to signal line; other to ground - no orientation dependency due to BiSy architecture. |
| Terminal 2 | Anode/Cathode (symmetrical) | Completes bidirectional clamping path; both terminals function identically under positive/negative transients. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.36 pF typ. - enables use on >5 Gbps serial links without measurable eye diagram degradation. |
| AEC-Q101 qualified option | G3 suffix indicates automotive-grade qualification - supports deployment in infotainment and ADAS interface modules. |
| Symmetrical bidirectional clamping | No polarity marking required - simplifies layout, eliminates orientation errors during automated placement. |
| e3 Sn-plated lead frame | Tin plating on exposed side walls enables AOI-compatible solder joint inspection without X-ray. |
| Low dynamic resistance | 1.4 Ω RDYN - minimizes voltage overshoot during fast-rising ESD pulses (<1 ns rise time). |
Applications
| USB 3.0 SuperSpeed Interface | HDMI 2.0 Differential Pairs |
|---|---|
|
Use Scenario: Protecting TX/RX differential lanes between SoC and Type-A/B connectors against ESD during hot-plug events. IC Role / Device Role / Timing Role: Line-level transient suppressor placed within 3 mm of connector, clamping ±16 kV strikes before reaching PHY. Use Value: Maintains 5 Gbps signal fidelity with <0.36 pF loading and prevents PHY latch-up or damage during repeated insertion cycles. |
Use Scenario: Shielding TMDS clock and data channels in flat-panel displays and set-top boxes from handling-induced discharges. IC Role / Device Role / Timing Role: Point-of-entry ESD clamp on each TMDS pair, referenced to chassis ground near HDMI receptacle. Use Value: Enables compliance with IEC 61000-4-2 Level 4 while preserving 600 MHz bandwidth and minimizing jitter accumulation. |
| Thunderbolt 3 Host Port | Automotive Infotainment USB-C |
|
Use Scenario: Securing dual-lane USB 3.1 Gen 2 + DisplayPort Alt Mode signals in laptop docking stations and peripherals. IC Role / Device Role / Timing Role: Single-device protection per lane, leveraging BiSy symmetry to avoid polarity routing constraints. Use Value: Eliminates need for dual-diode arrays; reduces BOM count and PCB real estate while meeting USB-IF ESD test requirements. |
Use Scenario: Hardening USB-C receptacles in vehicle head units against ESD in dry-climate cabin environments. IC Role / Device Role / Timing Role: AEC-Q101-qualified transient protector mounted adjacent to connector, grounded to vehicle chassis. Use Value: Supports 15-year automotive service life with validated reliability under -40 °C to +105 °C junction temperature cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4105MR6T1G | 0.5 pF capacitance, 5.5 V VRWM, ±30 kV ESD rating, SOT-563 package (1.6 × 1.6 mm) | Larger footprint; higher capacitance limits use to ≤3 Gbps interfaces; higher VRWM suits 5 V systems | Select when higher ESD margin is prioritized over signal integrity at multi-Gbps rates. |
| Infineon ESD204-B1-W02 | 0.3 pF capacitance, 3.3 V VRWM, ±20 kV ESD, DFN1006-2L (same footprint, different marking) | Identical package and capacitance; lower ESD rating (±20 kV vs. ±16 kV) but tighter VC distribution | Prefer for space-constrained consumer designs where 0.3 pF is critical and ±20 kV suffices. |
Compared with NUP4105MR6T1G and ESD204-B1-W02, VBUS03N1-DD1HG3-08 uniquely balances ultra-low capacitance (0.36 pF), AEC-Q101 qualification (G3), and precise 3.3 V VRWM - making it optimal for automotive and portable high-speed interfaces where footprint, voltage alignment, and reliability are jointly constrained.
Availability
VBUS03N1-DD1HG3-08 is available at Aetrix Electronics and suitable for USB 3.0 host ports, HDMI 2.0 display interfaces, and automotive infotainment USB-C receptacles requiring stable component supply across extended product lifecycles.
Supply support for VBUS03N1-DD1HG3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in power management, sensing, and circuit protection components with emphasis on reliability and miniaturization.
The VBUS03N1 series targets high-speed digital interface protection, engineered specifically for ESD robustness in space-constrained, low-voltage I/O applications such as mobile, computing, and automotive connectivity systems.
FAQ
What is the exact package type and dimensions of VBUS03N1-DD1HG3-08?
VBUS03N1-DD1HG3-08 uses the DFN1006-2B package: 1.0 mm × 0.6 mm body size, 0.4 mm maximum height, with cathode identified by a bar marking. Its footprint matches JEDEC MO-252, and the lead frame is e3 tin-plated for AOI-compatible solder joint inspection.
Is VBUS03N1-DD1HG3-08 qualified for automotive applications?
Yes - the "G3" suffix in VBUS03N1-DD1HG3-08 denotes AEC-Q101 qualification. This version undergoes stress testing per automotive reliability standards, including temperature cycling, HTRB, and ESD, supporting use in infotainment, telematics, and ADAS interface modules.
What is the maximum clamping voltage of VBUS03N1-DD1HG3-08 under IEC 61000-4-5 surge conditions?
Under IEC 61000-4-5 (8/20 μs waveform), VBUS03N1-DD1HG3-08 clamps to ≤21 V at its peak pulse current rating of 4 A. At 1 A, clamping voltage is ≤13 V - ensuring downstream ICs remain safely within their absolute maximum voltage ratings during surge events.
Can VBUS03N1-DD1HG3-08 be used on 5 V logic lines?
No - VBUS03N1-DD1HG3-08 has a 3.3 V reverse stand-off voltage (VRWM) and is specified for operation only within ±3.3 V. Using it on 5 V lines risks premature conduction and increased leakage; for 5 V systems, consider Vishay's VBUS05M1-03-G or ON Semi's NUP4105MR6T1G.
How does the BiSy architecture of VBUS03N1-DD1HG3-08 affect PCB layout?
The bidirectional symmetrical (BiSy) architecture of VBUS03N1-DD1HG3-08 eliminates polarity constraints: either terminal connects to signal, the other to ground. This removes orientation dependency during placement, reduces assembly errors, and allows flexible routing without dedicated anode/cathode trace assignment.
VBUS03N1-DD1HG3-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- 0402 (1006 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 7V
- Voltage - Clamping (Max) @ Ipp:
- 21V
- Current - Peak Pulse (10/1000µs):
- 4A (8/20µs)
- Power - Peak Pulse:
- 90W
- Power Line Protection:
- No
- Applications:
- HDMI, USB
- Capacitance @ Frequency:
- 0.36pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1006-2B
VBUS03N1-DD1HG3-08 FAQ
1.How can I place an order for VBUS03N1-DD1HG3-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for VBUS03N1-DD1HG3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VBUS03N1-DD1HG3-08 reliable?
The price and inventory of VBUS03N1-DD1HG3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VBUS03N1-DD1HG3-08 is usually 5 days.
3.What payment methods are accepted for VBUS03N1-DD1HG3-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VBUS03N1-DD1HG3-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VBUS03N1-DD1HG3-08?
VBUS03N1-DD1HG3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VBUS03N1-DD1HG3-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VBUS03N1-DD1HG3-08?
For technical support, including VBUS03N1-DD1HG3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VBUS03N1-DD1HG3-08 requirements.
6.How does Aetrix verify that VBUS03N1-DD1HG3-08 is sourced from the original manufacturer or authorized distributors?
All VBUS03N1-DD1HG3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VBUS03N1-DD1HG3-08 meets industry standards.
7.What is the process for return or replacement of VBUS03N1-DD1HG3-08?
All VBUS03N1-DD1HG3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VBUS03N1-DD1HG3-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VBUS03N1-DD1HG3-08 part is unused and in its original packaging.
Return procedure for VBUS03N1-DD1HG3-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VBUS03N1-DD1HG3-08 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
