Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division VGSOT04-HG3-08

Part No.:
VGSOT04-HG3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixVGSOT04-HG3-08.pdf
Description:
TVS DIODE 4VWM 14.3VC SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,769

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

VGSOT04-HG3-08 from Vishay Semiconductors is a unidirectional single-line ESD protection diode in SOT-23 package, rated for 4 V reverse stand-off voltage (VRWM), ±30 kV IEC 61000-4-2/ISO 10605 ESD immunity, and 540 W peak pulse power (8/20 μs). It delivers 40 A peak pulse current and clamps transients to ≤13.5 V at 40 A, serving as primary transient suppression on low-voltage data lines such as USB 2.0 or I²C interfaces.

For engineers reviewing the VGSOT04-HG3-08 datasheet, VGSOT04-HG3-08 pinout, VGSOT04-HG3-08 application, or VGSOT04-HG3-08 equivalent, this device is selected for high-reliability ESD hardening of 3.3 V–5 V signal paths where low capacitance (≤450 pF at 0 V), AEC-Q101 qualification, and tight clamping performance are critical.

Technical Context

The VGSOT04-HG3-08 implements BiAs-MODE (Bidirectional Asymmetrical) protection: reverse conduction initiates above 5 V breakdown (VBR = 5–7 V), while forward clamping holds negative transients near ground (VF ≤ 1.2 V at 1 A). Its SOT-23 three-terminal configuration connects Pin 1 to ground, Pin 3 to the protected line, and Pin 2 as internal connection-enabling open-circuit isolation below VRWM and rapid turn-on during overvoltage events.

This device meets AEC-Q101 stress requirements including H3B-class human body model (>8 kV), operates from –55 °C to +150 °C junction temperature, and features e3 Sn plating with MSL Level 1 moisture sensitivity-supporting lead-free reflow up to 260 °C peak without preconditioning.

Key Specifications

Parameter Value and Actual Design Meaning
VRWM 4 V - Maximum continuous working voltage before leakage exceeds 20 µA; sets upper limit for safe operation on 3.3 V logic rails.
VBR (min) 5 V - Guaranteed reverse breakdown threshold at 1 mA; ensures reliable triggering above system operating voltage.
VC @ 40 A ≤13.5 V - Peak clamping voltage under full-rated 8/20 µs surge; limits stress on downstream ICs like microcontrollers or PHYs.
CD @ 0 V 360–450 pF - Junction capacitance at zero bias; compatible with USB 2.0 (≤500 pF) and I²C (≤400 pF) signal integrity budgets.
PPPM (8/20 µs) 540 W - Peak pulse power handling capacity; sustains multiple ±30 kV ESD strikes per IEC 61000-4-2.
TJ max. +150 °C - Maximum junction temperature; supports under-hood automotive and industrial ambient environments.

Pinout & Package

SOT-23 package: 3-pin, surface-mount, green molding compound (UL 94 V-0), 9.2 mg weight, MSL Level 1, 260 °C max reflow peak temperature.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Ground (Anode common) Primary return path for ESD current; must be connected to low-impedance system ground plane.
Pin 2 Internal connection (no external bond) Not externally accessible; electrically tied internally to Pin 1 per SOT-23 footprint layout.
Pin 3 Protected line (Cathode) Input/output node for data/signal line; clamps positive transients to ground via reverse avalanche and negative transients via forward conduction.

Key Features

Feature Design Value
IEC 61000-4-2 / ISO 10605 compliance ±30 kV contact and air discharge - Meets highest industrial and automotive ESD immunity standards without external circuitry.
AEC-Q101 qualification H3B-class HBM (>8 kV) - Validated for automotive infotainment, ADAS sensor interfaces, and engine control modules.
BiAs-MODE asymmetry Reverse clamping ~10.3 V @ 40 A; forward clamping ~4.2 V @ 40 A - Enables tighter protection windows than symmetrical TVS devices.
e3 Sn termination Lead (Pb)-free, RoHS-compliant tin plating - Ensures solderability and long-term reliability in lead-free assembly processes.

Applications

USB 2.0 Data Lines I²C Bus Protection

Use Scenario: Protecting D+ and D− lines in embedded USB peripherals against ESD events during hot-plug insertion.

IC Role / Device Role / Timing Role: Standalone unidirectional ESD clamp placed directly at connector entry point.

Use Value: 450 pF capacitance preserves signal rise/fall times; 13.5 V clamping prevents damage to USB transceivers operating at 3.3 V.

Use Scenario: Safeguarding SDA/SCL lines in automotive body control modules exposed to harness-induced transients.

IC Role / Device Role / Timing Role: Point-of-use transient suppressor on bidirectional open-drain bus with 400 kHz clock rate.

Use Value: Low 20 µA leakage at 4 V VRWM avoids bus pull-up current errors; AEC-Q101 qualification ensures field reliability.

Automotive Sensor Interfaces Industrial CAN FD Transceiver I/O

Use Scenario: Shielding analog/digital outputs of pressure or temperature sensors mounted in engine compartments.

IC Role / Device Role / Timing Role: Primary ESD barrier between sensor ASIC and wiring harness connector.

Use Value: 150 °C TJ max enables placement near heat sources; ±30 kV rating exceeds ISO 10605 requirements for 12 V systems.

Use Scenario: Adding secondary ESD protection on CAN FD transceiver RX/TX pins beyond built-in protection.

IC Role / Device Role / Timing Role: External clamping diode supplementing internal TVS in high-speed CAN physical layer.

Use Value: 360 pF capacitance avoids signal distortion at 5 Mbps; 540 W PPPM handles coupled surges from adjacent power lines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ4.0A Higher VRWM (4.0 V), but bidirectional; 400 W PPPM (8/20 µs); 600 pF capacitance. Less suitable for data lines due to higher capacitance and symmetric clamping behavior. Select only when bidirectional protection is required and signal bandwidth allows >600 pF loading.
TPD2E001DRYR Lower VRWM (3.3 V); dual-channel; 12 pF capacitance; 200 W PPPM; not AEC-Q101 qualified. Better for high-speed digital interfaces (e.g., HDMI, PCIe), but lacks automotive qualification and single-line robustness. Prefer for consumer electronics with strict capacitance limits; avoid in automotive or industrial deployments requiring AEC-Q101.

Compared with SMAJ4.0A and TPD2E001DRYR, VGSOT04-HG3-08 uniquely balances AEC-Q101 qualification, 450 pF capacitance, and 540 W surge capability in a cost-effective SOT-23 package-making it optimal for automotive and industrial 3.3 V–5 V data line protection where reliability and standardized testing matter.

Availability

VGSOT04-HG3-08 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial sensor networks, and USB peripheral designs requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for VGSOT04-HG3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability passive and protection components for automotive, industrial, and computing markets.

The VGSOT family was designed specifically for robust, low-capacitance ESD protection of high-speed data lines in harsh environments-emphasizing AEC-Q101 qualification, precise clamping, and SOT-23 manufacturability.

FAQ

What is the maximum reverse working voltage (VRWM) of the VGSOT04-HG3-08?

The VGSOT04-HG3-08 has a maximum reverse working voltage (VRWM) of 4 V, meaning it maintains low leakage (<20 µA) up to this DC or steady-state AC voltage. This makes it suitable for protecting 3.3 V logic interfaces while ensuring minimal impact on normal signal operation. The device begins clamping above its 5–7 V breakdown range, providing margin between VRWM and VBR.

Does the VGSOT04-HG3-08 meet automotive qualification standards?

Yes, the VGSOT04-HG3-08 is AEC-Q101 qualified and rated for H3B-class human body model (HBM) with >8 kV tolerance. It also passes temperature cycling, humidity testing, and mechanical shock per AEC-Q101, confirming suitability for under-hood and cabin-mounted automotive electronics such as sensor interfaces and infotainment data links.

How does the BiAs-MODE architecture affect clamping behavior in the VGSOT04-HG3-08?

The BiAs-MODE (Bidirectional Asymmetrical) design in the VGSOT04-HG3-08 provides distinct clamping levels: ~10.3 V for positive transients (reverse avalanche) and ~4.2 V for negative transients (forward conduction). This asymmetry allows tighter protection windows than symmetrical TVS diodes-especially valuable for grounding-sensitive circuits where negative excursions must be held near 0 V.

What is the typical junction capacitance of the VGSOT04-HG3-08 at 0 V bias?

The VGSOT04-HG3-08 exhibits a typical junction capacitance (CD) of 360–450 pF at 0 V reverse bias and 1 MHz frequency. At 2 V bias, capacitance drops to ~225 pF. This value is optimized for USB 2.0 and I²C applications where signal integrity must be preserved without excessive RC delay or reflection.

Can the VGSOT04-HG3-08 replace the VGSOT03-HG3-08 in a design?

No-the VGSOT04-HG3-08 (VRWM = 4 V, VBR = 5–7 V) is not a direct replacement for VGSOT03-HG3-08 (VRWM = 3.3 V, VBR = 4–5.5 V). Substituting would raise the clamping threshold and risk insufficient protection on 3.3 V rails. Designers must verify VRWM alignment with system operating voltage and confirm that higher VBR does not compromise transient response timing or downstream IC tolerance.

VGSOT04-HG3-08 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
TO-236-3, SC-59, SOT-23-3
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
4V (Max)
Voltage - Breakdown (Min):
5V
Voltage - Clamping (Max) @ Ipp:
13.5V
Current - Peak Pulse (10/1000µs):
40A (8/20µs)
Power - Peak Pulse:
540W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
360pF @ 1MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

VGSOT04-HG3-08 FAQ

1.How can I place an order for VGSOT04-HG3-08 through Aetrix?

Please submit a Request for Quotation (RFQ) for VGSOT04-HG3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VGSOT04-HG3-08 reliable?

The price and inventory of VGSOT04-HG3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VGSOT04-HG3-08 is usually 5 days.

3.What payment methods are accepted for VGSOT04-HG3-08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VGSOT04-HG3-08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VGSOT04-HG3-08?

VGSOT04-HG3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VGSOT04-HG3-08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VGSOT04-HG3-08?

For technical support, including VGSOT04-HG3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VGSOT04-HG3-08 requirements.

6.How does Aetrix verify that VGSOT04-HG3-08 is sourced from the original manufacturer or authorized distributors?

All VGSOT04-HG3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VGSOT04-HG3-08 meets industry standards.

7.What is the process for return or replacement of VGSOT04-HG3-08?

All VGSOT04-HG3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VGSOT04-HG3-08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VGSOT04-HG3-08 part is unused and in its original packaging.

Return procedure for VGSOT04-HG3-08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

VGSOT04-HG3-08 Tags

  • VGSOT04-HG3-08
  • VGSOT04-HG3-08 PDF
  • VGSOT04-HG3-08 Datasheet
  • VGSOT04-HG3-08 Specifications
  • VGSOT04-HG3-08 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division VGSOT04-HG3-08
  • Buy VGSOT04-HG3-08
  • VGSOT04-HG3-08 Price
  • VGSOT04-HG3-08 Distributor
  • VGSOT04-HG3-08 Supplier
  • VGSOT04-HG3-08 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER