My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VGSOT08-G3-18
- Part No.:
- VGSOT08-G3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
VGSOT08-G3-18.pdf
- Description:
- TVS DIODE 8VWM 19.2VC SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:9,016
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VGSOT08-G3-18 from Vishay Semiconductors is a unidirectional single-line ESD protection diode in SOT-23 package, rated for 8 V reverse stand-off voltage (VRWM), ±30 kV IEC 61000-4-2/ISO 10605 ESD immunity, and 500 W peak pulse power (8/20 μs). It delivers 28 A peak pulse current and clamps transients to ≤14.4 V at full stress, enabling robust protection of USB 2.0 data lines in industrial human-interface devices.
For engineers reviewing the VGSOT08-G3-18 datasheet, VGSOT08-G3-18 pinout, VGSOT08-G3-18 application, or VGSOT08-G3-18 equivalent, this page provides verified electrical parameters, BiAs-mode clamping behavior, SOT-23 terminal mapping, automotive-grade AEC-Q101 qualification status, and direct alternative part comparisons with documented parameter divergence.
Technical Context
The VGSOT08-G3-18 implements Bidirectional Asymmetrical (BiAs) protection mode: pin 1 grounded, pin 3 connected to signal line; reverse clamping occurs above 9–11 V breakdown (VBR), forward clamping near 0 V via low VF (~1.0–3.2 V). Its 175–250 pF capacitance at 0 V VR enables compatibility with 480 Mbps USB 2.0 signaling without excessive signal distortion.
Designed for transient suppression per IEC 61000-4-5 (8/20 μs) and electrostatic discharge per IEC 61000-4-2 (±30 kV contact/air), it sustains 150 °C junction temperature and meets AEC-Q101 stress requirements including H3B-class HBM (>8 kV), making it suitable for automotive infotainment and body electronics interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 8 V - Maximum continuous working voltage before conduction; sets upper limit for protected signal swing (e.g., USB D+/D− nominal 3.3 V). |
| VBR (min/typ/max) | 9 / 10 / 11 V - Reverse breakdown threshold; defines onset of clamping during positive transients. |
| VC @ IPPM = 28 A | ≤18 V - Peak clamping voltage under full 8/20 μs surge; determines maximum stress on downstream IC I/O. |
| VF @ IPPM = 28 A | ≤3.2 V - Forward clamping level during negative transients; ensures sub-3.3 V rail-to-rail protection. |
| Capacitance @ 0 V | 175–250 pF - Signal-line loading at DC bias; compatible with USB 2.0 eye diagram integrity requirements. |
| ESD Immunity | ±30 kV - Verified per IEC 61000-4-2 (150 pF/330 Ω) and ISO 10605 (330 pF/330 Ω); exceeds Level 4 system immunity. |
| Package | SOT-23 - Standard 3-pin surface-mount footprint; supports automated placement and reflow (MSL Level 1, 260 °C peak). |
Pinout & Package
SOT-23 package: 3-pin, gull-wing leads, 2.9 mm × 1.3 mm × 1.01 mm body, e3 Sn termination, UL 94 V-0 molding compound, MSL Level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Ground (Anode common) | Low-inductance return path for ESD current; must connect directly to chassis or low-impedance ground plane. |
| Pin 2 | No Connection (NC) | Internally unconnected; electrically isolated; no PCB trace or solder required. |
| Pin 3 | Protected Line (Cathode) | Input for signal/data line (e.g., USB D+); clamps to ground during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| BiAs-mode clamping | Asymmetric forward/reverse clamping enables precise rail-referenced protection without external biasing. |
| AEC-Q101 qualified | Validated for automotive applications including temperature cycling, mechanical shock, and HBM >8 kV. |
| e3 Sn termination | Lead (Pb)-free, RoHS-compliant matte tin plating ensures reliable solderability and long-term intermetallic stability. |
| Low leakage | IR ≤ 5 μA at VR = 8 V minimizes standby power loss and avoids false triggering in high-impedance sensor interfaces. |
| High surge robustness | 500 W (8/20 μs) and 44 W (10/1000 μs) ratings support both fast ESD and slower lightning-induced surges. |
Applications
| USB 2.0 Interface Protection | Automotive Infotainment Port |
|---|---|
Use Scenario: Protecting D+ and D− lines of USB 2.0 host/device ports against ESD events during cable insertion or handling. IC Role / Device Role / Timing Role: Unidirectional transient voltage suppressor placed in series with each data line, referenced to system ground. Use Value: 175–250 pF capacitance preserves signal integrity up to 480 Mbps; ±30 kV immunity prevents interface lockup or PHY damage. | Use Scenario: Safeguarding auxiliary input ports (e.g., USB-A, mini-USB) in head units and display modules exposed to user interaction. IC Role / Device Role / Timing Role: Primary ESD clamp on exposed connectors, operating within AEC-Q101-qualified thermal and reliability envelope. Use Value: 150 °C TJ max and MSL Level 1 rating ensure sustained operation in hot vehicle cabins; 8 V VRWM matches 5 V logic rail margins. |
| Industrial Human-Machine Interface | POS Terminal Data Line |
Use Scenario: Shielding RS-232 or UART signals in factory-floor HMIs subject to frequent operator contact and static buildup. IC Role / Device Role / Timing Role: Single-line ESD suppressor on TX/RX lines, leveraging BiAs-mode for bidirectional transient suppression without polarity constraints. Use Value: 28 A IPPM and ≤14.4 V VC at full stress prevent latch-up or I/O damage in microcontroller UART peripherals. | Use Scenario: Securing payment card reader or barcode scanner data lines in retail POS terminals where ESD exposure is routine. IC Role / Device Role / Timing Role: Point-of-failure protection element on low-speed serial links (e.g., TTL-level UART), mounted adjacent to connector. Use Value: 5 μA IR at 8 V VRWM avoids loading legacy 5 V logic; SOT-23 footprint allows dense layout near edge connectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ8.0A | Higher VRWM (8.0 V), but bidirectional configuration and 600 W PPPM (8/20 μs); 3.5 pF typical capacitance. | Lower capacitance suits high-speed interfaces (e.g., HDMI), but bidirectional nature requires careful grounding in unidirectional signal paths. | Select SMAJ8.0A only when lower capacitance (<5 pF) is mandatory and circuit topology supports symmetric clamping. |
| TPD1E10B06DPYR | Unidirectional, 5.5 V VRWM, 1.5 pF capacitance, ±12 kV ESD rating; designed for ultra-high-speed USB 3.0/PCIe. | Insufficient ESD rating (±12 kV vs. ±30 kV) and lower VRWM limit use to low-voltage, high-speed digital lines-not general-purpose 5 V or automotive interfaces. | Choose TPD1E10B06DPYR only for <1 Gbps differential signaling where ultra-low capacitance outweighs ESD margin reduction. |
Compared with SMAJ8.0A and TPD1E10B06DPYR, VGSOT08-G3-18 uniquely balances ±30 kV ESD immunity, 8 V VRWM, and 175–250 pF capacitance-making it optimal for cost-sensitive, medium-speed (≤480 Mbps), automotive-qualified USB 2.0 and UART protection where robustness and footprint efficiency are prioritized over sub-5 pF loading.
Availability
VGSOT08-G3-18 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, automotive infotainment port hardening, and industrial HMI data line safeguarding requiring stable component supply across production lifecycles.
Supply support for VGSOT08-G3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with leadership in ESD protection, power MOSFETs, and precision resistors.
The VGSOTxx family was engineered specifically for high-reliability unidirectional ESD suppression in space-constrained consumer, industrial, and automotive electronics-emphasizing BiAs-mode clamping, AEC-Q101 compliance, and SOT-23 manufacturability.
FAQ
What is the maximum reverse working voltage (VRWM) of the VGSOT08-G3-18?
The VGSOT08-G3-18 has a maximum reverse working voltage (VRWM) of 8 V, meaning it remains non-conductive up to this DC or steady-state AC voltage on the protected line (pin 3) relative to ground (pin 1). This value is confirmed in the Electrical Characteristics table for VGSOT08 on page 6 of Vishay document 86326, and ensures compatibility with 5 V logic systems while providing margin against normal signal swings.
Does the VGSOT08-G3-18 meet AEC-Q101 qualification requirements?
Yes, the VGSOT08-G3-18 is AEC-Q101 qualified, as explicitly stated in the FEATURES section of the Vishay VGSOT03–VGSOT36 datasheet (Rev. 1.1, Feb 2025). It satisfies stress tests including human body model (HBM) Class H3B (>8 kV), temperature cycling, and high-temperature operating life-validating its suitability for automotive electronics such as infotainment and body control modules.
What is the clamping voltage of the VGSOT08-G3-18 under full 28 A surge current?
Under an 8/20 μs peak pulse current of 28 A (IPPM), the VGSOT08-G3-18 clamps to a maximum of 18 V (VC), as specified in the ELECTRICAL CHARACTERISTICS table for VGSOT08 on page 6. This value represents the worst-case voltage seen by the protected IC during surge conditions and is critical for ensuring downstream device I/O voltage tolerances are not exceeded.
How does the BiAs-mode operation of the VGSOT08-G3-18 differ from standard unidirectional TVS diodes?
BiAs-mode (Bidirectional Asymmetrical) means the VGSOT08-G3-18 clamps positive transients above ~10 V (reverse breakdown) and negative transients near 0 V (forward conduction), unlike symmetrical bidirectional TVS diodes that clamp equally in both polarities. This asymmetry allows precise rail-referenced protection without external bias, reducing component count and board area versus dual-diode solutions.
What is the capacitance of the VGSOT08-G3-18 at zero bias, and why does it matter for USB 2.0?
The VGSOT08-G3-18 exhibits 175–250 pF capacitance at 0 V reverse bias (VR = 0 V, f = 1 MHz), per the Electrical Characteristics table. This value is low enough to avoid significant signal rise-time degradation on USB 2.0 D+/D− lines (480 Mbps), preserving eye diagram integrity while still delivering robust ESD immunity-striking a deliberate balance between protection strength and high-speed usability.
VGSOT08-G3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V (Max)
- Voltage - Breakdown (Min):
- 9V
- Voltage - Clamping (Max) @ Ipp:
- 18V
- Current - Peak Pulse (10/1000µs):
- 28A (8/20µs)
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 175pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
VGSOT08-G3-18 FAQ
1.How can I place an order for VGSOT08-G3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for VGSOT08-G3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VGSOT08-G3-18 reliable?
The price and inventory of VGSOT08-G3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VGSOT08-G3-18 is usually 5 days.
3.What payment methods are accepted for VGSOT08-G3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VGSOT08-G3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VGSOT08-G3-18?
VGSOT08-G3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VGSOT08-G3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VGSOT08-G3-18?
For technical support, including VGSOT08-G3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VGSOT08-G3-18 requirements.
6.How does Aetrix verify that VGSOT08-G3-18 is sourced from the original manufacturer or authorized distributors?
All VGSOT08-G3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VGSOT08-G3-18 meets industry standards.
7.What is the process for return or replacement of VGSOT08-G3-18?
All VGSOT08-G3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VGSOT08-G3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VGSOT08-G3-18 part is unused and in its original packaging.
Return procedure for VGSOT08-G3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VGSOT08-G3-18 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
