Vishay Siliconix VP0808B-E3

Overview

VP0808B-E3 from Siliconix is a P-channel enhancement-mode MOSFET designed for high-side switching in low-power DC circuits, featuring –80 V drain-source breakdown voltage, 2.5 Ω maximum rDS(on) at –10 V VGS, –3.4 V typical gate threshold voltage, –0.88 A continuous drain current, and TO-205AD (TO-39) metal-can package with case-drain configuration. It operates reliably in battery-powered systems requiring moderate-voltage, low-current load control.

For engineers reviewing the VP0808B-E3 datasheet, VP0808B-E3 pinout, VP0808B-E3 application, or VP0808B-E3 equivalent, key selection criteria include verified high-side switch capability, confirmed –80 V V(BR)DSS rating, measured 2.5 Ω rDS(on) at –10 V, documented –3.4 V VGS(th) center point, and TO-205AD thermal performance with RthJA = 156 °C/W.

Technical Context

This device uses a planar vertical DMOS structure optimized for stable threshold behavior across temperature, with gate-body leakage limited to 100 nA at 20 V and 500 nA at 125 °C. Its static characteristics are specified under pulse conditions (PW ≤ 300 µs, duty cycle ≤ 2%) to avoid self-heating effects during parameter validation.

Switching performance is characterized with VDD = –25 V, RL = 50 Ω, and VGS swing from 0 to –10 V, yielding 11 ns turn-on delay, 30 ns rise time, 20 ns turn-off delay, and 30 ns fall time - values confirmed independent of operating temperature per datasheet note.

Key Specifications

Pinout & Package

VP0808B-E3 is housed in a TO-205AD (TO-39) metal-can package with case-drain configuration, providing mechanical robustness and direct heatsinking via the case. The package has three leads: Drain connected to case, Gate, and Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET high-side switching applications.

Compared with IRF9530NPbF and ZVP3306A, VP0808B-E3 offers the optimal balance of –80 V rating, 2.5 Ω conduction loss, and TO-205AD thermal performance for medium-voltage, low-current high-side switching where mechanical ruggedness and through-hole reliability are prioritized.

Availability

VP0808B-E3 is available at Aetrix Electronics and suitable for battery-operated systems, power supply converter circuits, motor control interfaces, and relay/solenoid drivers requiring stable component supply and long-lifecycle availability.

Supply support for VP0808B-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Siliconix, founded in 1962 and acquired by Vishay in 1998, pioneered commercial power MOSFET technology and established industry standards for discrete power devices.

The VP0808B-E3 belongs to Siliconix's legacy P-channel enhancement-mode MOSFET family, engineered specifically for high-reliability, low-power high-side switching in industrial and portable electronics where predictable threshold behavior and stable on-resistance are critical.

FAQ

What is the maximum continuous drain current rating for VP0808B-E3?

The VP0808B-E3 has a maximum continuous drain current of –0.88 A at TJ = 150 °C, derated to –0.53 A at TA = 25 °C per its absolute maximum ratings table. This value reflects thermal limits of the TO-205AD package and is validated under pulsed test conditions (PW ≤ 300 µs, duty cycle ≤ 2%) to prevent self-heating artifacts. The VP0808B-E3 must be used within these boundaries to ensure long-term reliability.

Is VP0808B-E3 suitable for high-side switching applications?

Yes, VP0808B-E3 is explicitly designed for high-side switching, as confirmed by its P-channel architecture, case-drain TO-205AD package, and application notes listing "High-Side Switching" as a primary use case. Its –3.4 V gate threshold and 2.5 Ω rDS(on) enable direct interface with 5 V logic controllers without level shifters, and the metal-can case provides mechanical stability in vibration-prone environments where VP0808B-E3 is deployed.

What is the gate-to-source threshold voltage range for VP0808B-E3?

The VP0808B-E3 has a gate-to-source threshold voltage range of –2 V to –4.5 V, with –3.4 V as the typical value measured at VDS = VGS and ID = –1 mA. This range is guaranteed across temperature and process variation, allowing robust turn-on margin when driven from standard 5 V microcontroller outputs. The VP0808B-E3 remains fully enhanced above –4.5 V and begins conducting measurably below –2 V, supporting predictable digital control.

Does VP0808B-E3 have avalanche rating or energy specification?

No, the VP0808B-E3 datasheet does not specify avalanche voltage, single-pulse avalanche energy (EAS), or repetitive avalanche ratings. Its absolute maximum ratings define V(BR)DSS = –80 V as the DC breakdown limit, and operation beyond this voltage-even briefly-may cause irreversible failure. Designers must implement external clamping or snubbing when driving inductive loads to protect the VP0808B-E3, as no intrinsic avalanche capability is documented.

What package type is used for VP0808B-E3 and how is the drain terminal configured?

The VP0808B-E3 uses the TO-205AD (TO-39) metal-can package with drain internally connected to the case, as shown in the top-view diagram labeled "Case Drain." This configuration requires electrical isolation of the mounting surface from other circuit nodes unless the application intentionally references the drain to chassis ground. The VP0808B-E3's case-drain design enhances thermal transfer but mandates careful PCB layout to avoid short circuits.