Vishay Siliconix VP1008B

Overview

VP1008B from Siliconix is a P-channel enhancement-mode MOSFET designed for high-side switching in low-power DC control circuits, featuring –100 V drain-source breakdown voltage, 5 Ω maximum rDS(on) at –10 V VGS, –2 to –4.5 V gate threshold, –0.79 A continuous drain current, and TO-205AD (TO-39) metal-can package with case-drain configuration. It operates reliably in battery-powered systems requiring moderate-voltage, low-current load switching.

For engineers reviewing the VP1008B datasheet, VP1008B pinout, VP1008B application, or VP1008B equivalent, key selection considerations include its –100 V V(BR)DSS rating, 2.5 Ω typical rDS(on), –3.4 V typical VGS(th), 75 pF input capacitance, and suitability for relay/solenoid driving, power supply sequencing, and motor enable control where gate drive simplicity and thermal robustness are critical.

Technical Context

The VP1008B employs a vertical P-channel silicon structure optimized for stable enhancement-mode operation with tightly controlled threshold voltage (–2 to –4.5 V) and low gate leakage (<100 nA at 20 V). Its TO-205AD package provides direct case-to-drain thermal conduction and mechanical ruggedness for industrial ambient conditions.

Switching performance is characterized by 40 ns turn-on time, 30 ns turn-off time, and minimal dependence on junction temperature-enabling predictable timing in pulse-width modulated loads. The device's 2.5 Ω typical rDS(on) at –10 V VGS supports efficient conduction while maintaining low gate charge (75 pF Ciss) for ease of drive from microcontroller GPIOs without buffer stages.

Key Specifications

Pinout & Package

VP1008B is housed in a TO-205AD (TO-39) metal-can package with case-connected drain terminal, providing low thermal resistance (RthJC = 20 °C/W) and EMI shielding. The case serves as both mechanical mounting surface and electrical drain node.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with IRF9530NPbF and DMN2004LK-7, the VP1008B uniquely combines –100 V rating, TO-39 case-drain construction, and 2.5 Ω typical rDS(on) in a through-hole package optimized for low-power, high-reliability high-side switching-making it irreplaceable in space-constrained, thermally sensitive, or EMI-sensitive designs where drain-isolation and mechanical robustness are mandatory.

Availability

VP1008B is available at Aetrix Electronics and suitable for battery-operated systems, power supply sequencing, and relay/solenoid driving requiring stable component supply and long-term industrial availability.

Supply support for VP1008B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Siliconix, founded in 1962 and acquired by Vishay in 1998, pioneered commercial power MOSFET technology and established foundational benchmarks for switching performance, ruggedness, and reliability in discrete semiconductors.

The VP1008B belongs to Siliconix's legacy P-channel enhancement-mode MOSFET family targeting high-side DC switching in industrial controls, instrumentation, and power management-designed for simplicity of drive, thermal stability, and mechanical durability in mission-critical analog interfaces.

FAQ

What is the maximum continuous drain current rating for VP1008B at 150°C junction temperature?

The VP1008B has a maximum continuous drain current (ID) of –0.79 A at TJ = 150°C, as specified in the Absolute Maximum Ratings table. This value assumes proper heatsinking and ambient conditions that maintain junction temperature within limit. At 25°C ambient with natural convection, derating applies per the 156 °C/W RthJA specification. The VP1008B must not exceed this current under steady-state conditions to ensure long-term reliability.

Is VP1008B pin-compatible with VP0808B, and what is the key electrical difference?

Yes, VP1008B shares identical TO-205AD (TO-39) pinout and package with VP0808B, including case-drain configuration. The key electrical difference is drain-source breakdown voltage: VP1008B is rated for –100 V V(BR)DSS, whereas VP0808B is rated for –80 V. All other parameters-including rDS(on), VGS(th), and ID-are nearly identical. This makes VP1008B a direct upgrade in applications requiring higher transient voltage tolerance.

Does VP1008B require an external flyback diode when driving inductive loads like relays?

No, the VP1008B includes an integral body diode with forward voltage ~1.2 V and sufficient surge capability to handle typical relay coil flyback energy. Its TO-205AD package also provides low-inductance case-drain path, enhancing diode effectiveness. However, for high-energy or fast-switching inductive loads, an external TVS or RC snubber may still be recommended to limit VDS overshoot beyond –100 V.

What is the typical gate threshold voltage of VP1008B, and how does it affect microcontroller interface?

The typical gate threshold voltage (VGS(th)) of VP1008B is –3.4 V, with a range of –2 to –4.5 V. This allows reliable turn-on using standard 3.3 V or 5 V microcontroller GPIOs-since applying 0 V to gate (relative to source) yields full enhancement. No level shifter is needed, and the moderate threshold prevents accidental turn-on from noise or leakage, making the VP1008B especially suited for direct MCU-driven high-side switching.

Can VP1008B be used in linear (analog) mode for precision current regulation?

No, the VP1008B is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) is defined only for switching applications, and the datasheet provides no transfer curve linearity, thermal stability data, or SOA curves for analog use. For precision current regulation, purpose-designed lateral P-channel MOSFETs or dedicated current regulators should be selected instead of the VP1008B.