My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VTVS19ASMF-HM3-18
- Part No.:
- VTVS19ASMF-HM3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS19ASMF-HM3-18.pdf
- Description:
- TVS DIODE 18.7VWM 31VC DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,275
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VTVS19ASMF-HM3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, featuring 18.7 V stand-off voltage (VRWM), 20.9–23.2 V reverse breakdown voltage (VBR), and 31 V maximum clamping voltage (VC) at 12.44 A peak pulse current - deployed for ESD and surge protection on low-voltage DC power rails and I/O lines in automotive body electronics.
For engineers reviewing the VTVS19ASMF-HM3-18 datasheet, VTVS19ASMF-HM3-18 pinout, VTVS19ASMF-HM3-18 application, or VTVS19ASMF-HM3-18 equivalent, key selection criteria include its ±5 % VBR tolerance, 558 pF junction capacitance at 0 V, AEC-Q101 qualification readiness, halogen-free construction, and compatibility with SOD-123W footprint for space-constrained PCB layouts.
Technical Context
This device operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its 20.9–23.2 V breakdown threshold, clamping transients to ≤31 V within nanoseconds. Its low-noise fast-response architecture enables sub-1 ns response time, critical for protecting sensitive analog and digital interfaces against IEC 61000-4-2 ±30 kV contact/air discharge events.
Thermally rated for TJ = −55 °C to +175 °C and mounted on infinite heat sink (RthJL = 20 K/W), it sustains 400 W peak pulse power under 10/1000 μs waveform while maintaining <0.05 μA leakage at VRWM - enabling robust operation in under-hood automotive modules and industrial control terminals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage (VRWM) | 18.7 V - maximum continuous reverse operating voltage before conduction begins |
| Breakdown Voltage (VBR) | 20.9–23.2 V at IT = 1 mA - defines precise avalanche onset range with ±5 % tolerance |
| Clamping Voltage (VC) | 31 V at IPPM = 12.44 A - limits transient voltage seen by protected circuitry during surge |
| Peak Pulse Power (PPP) | 400 W (10/1000 μs) - supports high-energy surge suppression without thermal runaway |
| Junction Capacitance (CD) | 558 pF at VR = 0 V, f = 1 MHz - impacts signal integrity on high-speed data lines; requires layout mitigation |
| ESD Rating | ±30 kV contact / ±30 kV air per IEC 61000-4-2 - meets automotive-level ESD immunity requirements |
| Operating Temperature | −55 °C to +175 °C - qualified for under-hood and industrial ambient environments |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case compatible with SOD-123W footprint; dimensions: 3.9 mm × 1.9 mm × 1.08 mm; cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Reference node for unidirectional clamping | Connected to system ground or low-side return path; establishes forward-biased reference for reverse-transient conduction |
| Cathode | Transient voltage input terminal | Connected to protected line (e.g., CAN_H, LIN, sensor supply); conducts avalanche current to anode during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Enables single-device protection against ISO 7637-2 Pulse 1/2a/3a surges in 12 V automotive systems |
| ±5 % VBR tolerance | Ensures tight clamping window across production lots, reducing design margin uncertainty |
| Halogen-free, RoHS-compliant, lead-free terminations | Meets automotive ELV directive and IPC-J-STD-020 MSL level 1 reflow requirements |
| Low-noise fast-response technology | Sub-1 ns response time preserves signal fidelity on high-speed sensor or communication lines |
| AEC-Q101 qualification available | Supports direct use in automotive powertrain, chassis, and body control modules without additional qualification |
Applications
| Automotive Body Control Module (BCM) | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V supply rail and LIN bus lines in door module ECUs against load dump and ESD. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between LIN line and ground, clamping transients before they reach LIN transceiver IC. Use Value: Prevents latch-up or permanent damage to LIN transceivers during ±30 kV ESD events and 100 V/50 ms load dump pulses. |
Use Scenario: Safeguarding analog output (4–20 mA) and digital I/O (RS-485) of pressure/temperature sensors in factory automation panels. IC Role / Device Role / Timing Role: Standoff-clamp TVS on sensor signal line, conducting surge energy to ground while holding line voltage ≤31 V. Use Value: Maintains signal accuracy during 4 kV EFT bursts and prevents false readings or sensor reset due to transient-induced noise coupling. |
| Automotive Infotainment USB Port | Smart Meter Power Input Stage |
Use Scenario: ESD protection on VBUS and D+/D− lines of USB 2.0 ports in head units exposed to user-handling events. IC Role / Device Role / Timing Role: Low-capacitance TVS array element (used per-line) suppressing ±30 kV contact discharge without distorting 480 Mbps data eye. Use Value: Preserves USB signal integrity while meeting IEC 61000-4-2 compliance without requiring series impedance tuning. |
Use Scenario: Surge suppression on 24 V DC input of smart electricity meters subjected to lightning-induced surges on utility wiring. IC Role / Device Role / Timing Role: Primary clamping device in two-stage protection scheme, absorbing 400 W surge energy before downstream MOV or GDT triggers. Use Value: Extends meter lifetime by preventing catastrophic failure during 10/1000 μs surges up to 12.44 A peak current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A | Same DO-214AC (SMA) package; 18 V VRWM, 20–22.1 V VBR, 29.2 V VC at 13.7 A; higher capacitance (650 pF) | Larger footprint (4.5 × 2.7 mm vs. 3.9 × 1.9 mm); less suitable for ultra-dense layouts | Select when legacy SMA footprint compatibility is required and board area permits larger package |
| SMF19A | Identical SMF (DO-219AB) package; same 18.7 V VRWM, but ±10 % VBR tolerance (20.9–25.4 V) and 32.4 V VC at 12.3 A | Looser clamping spec reduces protection margin; not AEC-Q101 qualified | Choose only for cost-sensitive non-automotive applications where tighter VBR control is not critical |
Compared with SMAJ18A and SMF19A, VTVS19ASMF-HM3-18 delivers superior clamping precision (±5 % VBR), lower VC (31 V), smaller footprint, and AEC-Q101 readiness - making it optimal for next-gen automotive and space-constrained industrial designs demanding high reliability.
Availability
VTVS19ASMF-HM3-18 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, infotainment USB protection, and smart meter power input stages requiring stable component supply and long-term lifecycle support.
Supply support for VTVS19ASMF-HM3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
VTVS19ASMF-HM3-18 belongs to Vishay's eSMP® Series TransZorb® family - engineered specifically for compact, high-power transient suppression in harsh-environment applications where space, thermal performance, and AEC-Q101 compliance are critical.
FAQ
What is the maximum clamping voltage of VTVS19ASMF-HM3-18 under surge conditions?
The VTVS19ASMF-HM3-18 exhibits a maximum reverse clamping voltage (VC) of 31 V when subjected to its rated 12.44 A peak pulse current (10/1000 μs waveform). This value is guaranteed across temperature and process variation, ensuring predictable protection behavior for downstream ICs like LIN transceivers or microcontrollers. The clamping occurs rapidly due to its low-noise fast-response architecture, limiting transient exposure duration.
Is VTVS19ASMF-HM3-18 qualified to AEC-Q101 standards?
VTVS19ASMF-HM3-18 is offered in an AEC-Q101 qualified version (denoted by "H" in the ordering code), confirming compliance with stress tests including HTGB, HTRB, TCT, and ESD per JESD22. While the base part number does not inherently imply qualification, the "H" suffix explicitly indicates full AEC-Q101 certification - essential for deployment in automotive body control, lighting, and infotainment modules.
What is the junction capacitance of VTVS19ASMF-HM3-18 and how does it affect high-speed signals?
VTVS19ASMF-HM3-18 has a typical junction capacitance (CD) of 558 pF at VR = 0 V and f = 1 MHz. This capacitance forms a low-pass filter with series impedance on protected lines; for USB 2.0 or RS-485, it may require careful layout (short traces, ground guard rings) or pairing with lower-capacitance devices. It is optimized for power/supply-line protection rather than GHz-range data lines.
Can VTVS19ASMF-HM3-18 be used in bidirectional configurations?
No - VTVS19ASMF-HM3-18 is a unidirectional TVS diode, designed only for clamping positive transients relative to ground. Its internal structure lacks symmetrical avalanche capability. For bidirectional protection (e.g., AC lines or differential buses), a dedicated bidirectional variant such as VTVS19BSMF-HM3-18 or a back-to-back diode configuration is required; substituting this part would leave negative transients unprotected.
What is the thermal resistance and maximum junction temperature rating of VTVS19ASMF-HM3-18?
VTVS19ASMF-HM3-18 has a thermal resistance RthJL of 20 K/W when mounted on an infinite heat sink, and operates across a junction temperature range of −55 °C to +175 °C. This wide range supports under-hood automotive placement and industrial environments with elevated ambient temperatures. Derating curves in the datasheet must be applied for sustained power dissipation above 25 °C ambient.
VTVS19ASMF-HM3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18.7V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 31V
- Current - Peak Pulse (10/1000µs):
- 12.44A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 558pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS19ASMF-HM3-18 FAQ
1.How can I place an order for VTVS19ASMF-HM3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS19ASMF-HM3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS19ASMF-HM3-18 reliable?
The price and inventory of VTVS19ASMF-HM3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS19ASMF-HM3-18 is usually 5 days.
3.What payment methods are accepted for VTVS19ASMF-HM3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS19ASMF-HM3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS19ASMF-HM3-18?
VTVS19ASMF-HM3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS19ASMF-HM3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS19ASMF-HM3-18?
For technical support, including VTVS19ASMF-HM3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS19ASMF-HM3-18 requirements.
6.How does Aetrix verify that VTVS19ASMF-HM3-18 is sourced from the original manufacturer or authorized distributors?
All VTVS19ASMF-HM3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS19ASMF-HM3-18 meets industry standards.
7.What is the process for return or replacement of VTVS19ASMF-HM3-18?
All VTVS19ASMF-HM3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS19ASMF-HM3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS19ASMF-HM3-18 part is unused and in its original packaging.
Return procedure for VTVS19ASMF-HM3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS19ASMF-HM3-18 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
