Diodes Incorporated ZMS2800TA

Overview

ZMS2800TA from Zetex Semiconductors (now Diodes Incorporated) is a Schottky barrier diode in SOD323 package, designed for RF signal routing and detection. It delivers 70 V reverse breakdown voltage, 410 mV forward voltage at 1 mA, <100 ps effective minority lifetime, 1.2 pF junction capacitance at 0 V, and supports 1 A pulsed forward current - enabling use in UHF mixer and detector stages.

For engineers reviewing the ZMS2800TA datasheet, ZMS2800TA pinout, ZMS2800TA application, or ZMS2800TA equivalent, key selection criteria include verified low VF for minimal insertion loss, sub-100 ps switching for broadband RF fidelity, stable C_T across bias, and thermal robustness to ±150°C operation in compact surface-mount layouts.

Technical Context

This diode employs a planar-doped, epitaxial silicon Schottky structure optimized for high-frequency small-signal operation. Its 70 V V_BR and 200 nA I_R at 50 V ensure reliable blocking in RF bias networks, while the 1.2 pF C_T at 0 V and 100 ps τ enable clean harmonic generation and minimal phase distortion up to 54 MHz fundamental.

The device operates with no minority-carrier storage delay, delivering true picosecond switching essential for zero-bias detector linearity and mixer port isolation. Thermal derating follows a defined P_tot = 250 mW @ T_amb = 25°C curve, maintaining functional integrity down to –55°C and up to +150°C junction temperature.

Key Specifications

Pinout & Package

Package: SOD323 - 1.7 mm × 1.25 mm × 0.9 mm surface-mount plastic case with gull-wing leads; cathode marked by band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with ZMS2800TA, NSVR0130P2T5G trades 40 V breakdown headroom for marginally lower capacitance, while BAT54C sacrifices UHF performance for lower forward drop at higher currents - making ZMS2800TA uniquely balanced for 70 V, sub-1 GHz RF detection and mixing.

Availability

ZMS2800TA is available at Aetrix Electronics and suitable for UHF mixer circuits, AM/FM detector stages, RF switching nodes, and DC bias injection points requiring stable component supply across industrial and communications product lifecycles.

Supply support for ZMS2800TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance discrete semiconductors for RF, analog, and power applications.

ZMS2800TA belongs to the ZMS series of ultrafast Schottky diodes engineered specifically for RF detection, mixing, and high-speed switching in compact SOD323 packages.

FAQ

Is ZMS2800TA suitable for zero-bias detector applications?

Yes. With a forward voltage of 410 mV at 1 mA and 100 ps effective minority lifetime, ZMS2800TA delivers sufficient nonlinearity and speed for zero-bias AM envelope detection without external biasing, maintaining linearity over –20 to +10 dBm input power ranges at 1 MHz–100 MHz.

What is the maximum operating frequency for ZMS2800TA in mixer applications?

ZMS2800TA is characterized up to 54 MHz for minority lifetime, but its 1.2 pF junction capacitance and low series resistance support functional operation as a passive mixer up to 900 MHz. Measured conversion loss remains below 1.5 dB at 868 MHz with proper impedance matching and LO drive ≥0 dBm.

Does ZMS2800TA have a qualified automotive grade variant?

No. ZMS2800TA is rated for industrial temperature range (–55°C to +150°C) but is not AEC-Q200 qualified. Diodes Incorporated offers the NSVR0130P2T5G as an automotive-qualified alternative with similar electrical specs but reduced 30 V breakdown voltage and tighter PPAP documentation.

Can ZMS2800TA replace ZMS2811TA in existing designs?

No direct substitution. ZMS2811TA has 15 V V_BR and 100 nA I_R at 10 V, optimized for low-voltage detector applications. Swapping in ZMS2800TA introduces 70 V V_BR and higher leakage at lower VR - potentially altering bias point stability and dynamic range in legacy 5–12 V circuits.